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    Taiwan Semiconductor TSM160N10CZ C0G

    MOSFET N-CH 100V 160A TO220
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    DigiKey TSM160N10CZ C0G Tube 13 1
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    Avnet Americas TSM160N10CZ C0G Tube 4,000
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    Taiwan Semiconductor TSM160N10CZ

    MOSFETs Power MOSFET, N-CHAN 100V, 160A, 5.5mOhm
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    TSM160N10CZ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TSM160N10CZ C0G Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 160A TO220 Original PDF

    TSM160N10CZ Datasheets Context Search

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    TSM160N10

    Abstract: No abstract text available
    Text: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.)


    Original     		PDF TSM160N10 O-220 154nC 300pF TSM160N10CZ 50pcs TSM160N10

    TSM160N10

    Abstract: No abstract text available
    Text: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.)


    Original     		PDF TSM160N10 O-220 154nC 300pF TSM160N10CZ 50pcs TSM160N10

    Untitled

    Abstract: No abstract text available
    Text: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ)(max) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.)


    Original     		PDF TSM160N10 O-220 154nC 300pF TSM160N10CZ 50pcs Alex121123

    Untitled

    Abstract: No abstract text available
    Text: TSM160N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features ● ● ● ● VDS V RDS(on)(mΩ) ID (A) 100 5.5 @ VGS =10V 160 Block Diagram Advanced Trench Technology Low RDS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.)


    Original     		PDF TSM160N10 O-220 154nC 260pF 50pcs TSM160N10CZ 70rty