FCS-32
Abstract: CX28560 fcs32
Text: 500335A April 22, 2002 CX28560 Product Bulletin Product Affected: CX28560-11P, 680-pin TBGA package 40 mm This document describes conditions that may cause the operation of the above device to deviate from published specifications. TSLP Channel Status Register Always Reads Zero
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00335A
CX28560
CX28560-11P,
680-pin
0x128800
0x10C84
FCS-16
FCS-32
0x129000
40-byte
CX28560
fcs32
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E6327
Abstract: transistor bc 588 transistor bc 855 BAV99E6327 BGX50AINCT-ND BAS70E6327 BC 194 TRANSISTORS BC847A-E6327 smbd7000E6327 BAV199E6327
Text: Transistor Pin Out Diodes and Transistors Fig. 2 Fig. 1 1 Fig. 3 Fig. 4 3 3 3 1 2 1 2 3 1 2 SOT-343 3 3 2 3 1 4 2 2 2 1 TO-220-3-1 TO-220-2-2 SOT-89 SOT-23 Pkg Pin 1 Pin 2 Pin 3 Pin 4 SOT-23 B E C — SOT-89 B C E — SOT-343 B E C E TSFP-4 1 TSLP-2-7 NEW!
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OT-343
O-220-3-1
O-220-2-2
OT-89
OT-23
OT-23
OT-89
OT-343
SC-74
SC-79
E6327
transistor bc 588
transistor bc 855
BAV99E6327
BGX50AINCT-ND
BAS70E6327
BC 194 TRANSISTORS
BC847A-E6327
smbd7000E6327
BAV199E6327
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PDF
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Untitled
Abstract: No abstract text available
Text: SURFBOARDS THE BREADBOARDING MEDIUM FOR R SURFACE MOUNT TM 33000 SERIES APPLICATION SPECIFIC ADAPTERS MODEL 33410 REV A- 10-2011 PARTIAL LISTING ACCEPTS 10 LEAD .5 mm PITCH DEVICES IDS33410 INFINEON TSLP9-1 ON SEMI UDFN10 2.5x1,0.5P WLCSP10, 2.46x0.96 TEXAS INST.
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IDS33410
UDFN10
WLCSP10,
R-PSON-N10
020in.
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TSLP-2-7
Abstract: TSLP date code Sanyo semiconductor TSLP-2-7-AM090819-01 TSLP27
Text: Ou t 1 i n e D r a w i n g Measure Mass 50/1 NTS 0. 0006 0.6±o. os (g) Unit mm IFor reference Polarity discriminating mark 2: SANYO P a c k a g e Code JEDEC P a c k a g e Code JE I TA P a c k a g e Code TSLP-2-7 D r a w i n g No. E n a c t No. Drawn Checked
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OCR Scan
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TC-00002094
TSLP-2-7-AM090819-01ï
TSLP-2-7-AM090819-01
TSLP-2-7
TSLP
date code Sanyo semiconductor
TSLP27
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PDF
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AN-081
Abstract: BGA619
Text: Application Note No. 081 Discrete Semiconductors The BGA619 Silicon-Germanium High IP3 Low Noise Amplifier in PCS Receiver Applications Features • Easy-to-use LNA MMIC in 70 GHz ft SiGe technology • Tiny „Green“ P-TSLP-7-1 package no Lead or Halogen
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BGA619
AN081
AN-081
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PDF
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Infineon Technologies Silicon Tuning Diode
Abstract: No abstract text available
Text: BBY52. Silicon Tuning Diodes High Q hyperabrupt tuning diode Designed for low tuning voltage operation For VCO's in mobile communications equipment BBY52-02L BBY52-02W 1 2 Type BBY52-02L* BBY52-02W Package TSLP-2-1 SCD80 Configuration single, leadless
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BBY52.
BBY52-02L
BBY52-02W
BBY52-02L*
SCD80
Oct-24-2002
Infineon Technologies Silicon Tuning Diode
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PDF
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BFS360L6
Abstract: No abstract text available
Text: BFS360L6 NPN Silicon RF Transistor 4 Preliminary data Low voltage/ Low current operation 3 5 For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm 2 6 1 Low noise figure: 1.0 dB at 1.8 GHz 6 T R 1 5 T R 2 4 P-TSLP-6-1 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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BFS360L6
Jan-30-2003
BFS360L6
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PDF
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BFS386L6
Abstract: tr1150
Text: BFS386L6 NPN Silicon RF Transistor 4 Preliminary data 3 5 2 6 Low voltage/ low current operation 1 For low noise amplifiers For oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: TR1: 1.0dB at 1.8 GHz P-TSLP-6-1 TR2: 1.1 dB at 1.8 GHz 6
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BFS386L6
Feb-28-2002
BFS386L6
tr1150
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PDF
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Untitled
Abstract: No abstract text available
Text: BBY52. Silicon Tuning Diodes High Q hyperabrupt tuning diode Designed for low tuning voltage operation For VCO's in mobile communications equipment BBY52-02L BBY52-02W 1 2 Type BBY52-02L* BBY52-02W Package TSLP-2-1 SCD80 Configuration single, leadless
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BBY52.
BBY52-02L
BBY52-02W
BBY52-02L*
SCD80
Oct-24-2002
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PDF
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Untitled
Abstract: No abstract text available
Text: BBY52. Silicon Tuning Diodes • Ηigh Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO`s in mobile communications equipment • Pb-free RoHS compliant package BBY52-02L BBY52-02W Type BBY52-02L BBY52-02W Package TSLP-2-1
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BBY52.
BBY52-02L
BBY52-02W
SCD80
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PDF
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Untitled
Abstract: No abstract text available
Text: BAR 67-02L Silicon PIN Diode Preliminary data Low loss RF switch 2 RF attenuator Low series capacitance and resistance 1 Ultra small leadless package 1 2 EHA07001 Type BAR 67-02L Marking TT Pin Configuration 1=C 2=A Package TSLP-2 - Maximum Ratings
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67-02L
EHA07001
Mar-05-2001
100MHz
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PDF
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TSLP-2-17
Abstract: No abstract text available
Text: Outline drawing Me a s u r e M a s s g Un i t 5 0 / 1 ( NTS) 0. 0 0 0 6 IFor reference mm 0. 6 ± 0 . 05 2: SANYO P a c k a g e Code JEDEC P a c k a g e Code JEITA Package Code Type Number TSLP-2-17 D r a w i n g No . Enact No. Drawn S AN Y O S e m i c o n d u c t o r
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OCR Scan
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TSLP-2-17
TSLP-2-17-AM090B20-01ï
TSLP-2-17-AM090B20-01
TSLP-2-17
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PDF
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marking date code Sanyo semiconductor
Abstract: TSLP marking date code Sanyo amo package
Text: M e a s u r e M a s s g Uni t 5 0 / 1 (NTS) 0.0016 mm Q u 1 1 ine drawing *Foi Reference ti :L o t in di cat ion 1 SANYO P a c k a g e Code JEDEC P a c k a g e Code JE ITA P a c k a g e Code T y p e N u m b e r TSLP- D r a w i n g No. E n a c t No. Drawn
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OCR Scan
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PDF
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kester r256
Abstract: paste profile NB 40 smd transistor kester Re SOLDER PASTE smd transistor marking PA
Text: P - T S L P - 2 - 1 / P - T S L P - 3 - 1 Recommendations for the Board Assembly Ta rge t T h e t a r g e t of this document is to provide guidelines for our customers to successfully introduce Infineon's leadless packages P-TSLP2-1 / P-TSLP-3-1 into production. This includes recommendations for board pad design, stencil layout, component placement, and soldering process. Generally standard SMT equipment and processes are suitable for
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B000-H0000-X-X-7600
kester r256
paste profile
NB 40 smd transistor
kester Re SOLDER PASTE
smd transistor marking PA
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BAS16
Abstract: No abstract text available
Text: BAS16. Silicon Switching Diode For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 D 2 4 D 1 1 Package SOT23 TSLP-2-1 SC79 SCD80 SOD323 TSLP-4-4 SOT363 SC74 SOT323 3 D 3 2 2 Type BAS16
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BAS16.
BAS16
BAS16W
BAS16-02L
BAS16-02V
BAS16-02W
BAS16-03W
BAS16S
BAS16U
SCD80
BAS16
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PDF
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Untitled
Abstract: No abstract text available
Text: BFS360L6 NPN Silicon RF Transistor 4 Preliminary data 3 5 2 6 Low voltage/ Low current operation 1 For low noise amplifiers For Oscillators up to 3.5 GHz and Pout > 10 dBm Low noise figure: 1.0 dB at 1.8 GHz P-TSLP-6-1 6 T R 1 5 4 T R 2 1 2 3 ESD: Electrostatic discharge sensitive device, observe handling precaution!
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Original
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BFS360L6
BFS360L6
Feb-28-2002
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PDF
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Untitled
Abstract: No abstract text available
Text: BBY52. Silicon Tuning Diodes • Ηigh Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO`s in mobile communications equipment • Pb-free RoHS compliant package BBY52-02L BBY52-02W Type BBY52-02L BBY52-02W Package TSLP-2-1
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BBY52.
BBY52-02L
BBY52-02W
SCD80
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PDF
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free transistor
Abstract: BFR740L3RH uln 2008 uln 2008 datasheet Digital Oscilloscope Preamplifier ULN 2009 ultra Low Noise ULN types 825000 LQP10A MTA-100
Text: Application Note, Rev. 1.1, May 2009 Application Note No. 170 BFR740L3RH SiGe:C Ultra Low Noise RF Transistor in 5 – 6 GHz LNA Application with 14 dB Gain, 1.3 dB Noise Figure & < 100 nanosecond Turn-On / Turn-Off Time TSLP-3-9 Pb-Free / Halogen Free Transistor Package
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BFR740L3RH
free transistor
uln 2008
uln 2008 datasheet
Digital Oscilloscope Preamplifier
ULN 2009
ultra Low Noise ULN types
825000
LQP10A
MTA-100
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PDF
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marking NB transistor
Abstract: top marking 3c sot23 transistor marking 2A H SOT23 package diodes marking 2A marking EA SOT23 transistor marking ND SS MARKING sot23
Text: P - T S L P - 2 - 1 / P - T S L P - 3 - 1 Infineo n's lead less Pa cka ges P-TS LP-2-1 and TSLP-3 -1 T h e P last i c-T h i n S ma ll Lead l e ss Pa ck a g e with a dimension of 1,0 mm * 0,6 mm is one of the smallest available packages for discrete devices like
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B000-H0000-X-X-7600
marking NB transistor
top marking 3c sot23
transistor marking 2A H
SOT23 package diodes
marking 2A
marking EA SOT23
transistor marking ND
SS MARKING sot23
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PDF
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33410
Abstract: No abstract text available
Text: SURFBOARDS THE BREADBOARDING MEDIUM FOR R SURFACE MOUNT TM 33000 SERIES APPLICATION SPECIFIC ADAPTERS MODEL 33410 REV A- 10-2011 PARTIAL LISTING ACCEPTS 10 LEAD .5 mm PITCH DEVICES IDS33410 INFINEON TSLP9-1 ON SEMI UDFN10 2.5x1,0.5P WLCSP10, 2.46x0.96 TEXAS INST.
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Original
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IDS33410
UDFN10
WLCSP10,
R-PSON-N10
33410
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PDF
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BAS16
Abstract: BAS16-02L
Text: BAS16-02L Silicon Switching Diode Preliminary data For high-speed switching application 2 1 Type BAS16-02L Marking A6 Pin Configuration 1=C 2=A Package TSLP-2 - Maximum Ratings Parameter Symbol Diode reverse voltage VR 75 Peak reverse voltage- VRM 85 Forward current
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BAS16-02L
Aug-29-2001
100ns,
EHN00017
EHB00022
EHB00025
BAS16
BAS16-02L
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PDF
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BBY52-02L
Abstract: BBY52 BBY52-02W SCD80
Text: BBY52. Silicon Tuning Diodes High Q hyperabrupt tuning diode Designed for low tuning voltage operation For VCO's in mobile communications equipment BBY52-02L BBY52-02W 1 2 Type BBY52-02L* BBY52-02W Package TSLP-2-1 SCD80 Configuration single, leadless
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BBY52.
BBY52-02L
BBY52-02W
BBY52-02L*
SCD80
Oct-24-2002
BBY52-02L
BBY52
BBY52-02W
SCD80
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PDF
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marking code INFINEON
Abstract: No abstract text available
Text: BBY52. Silicon Tuning Diodes • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation • For VCO's in mobile communications equipment BBY52-02L BBY52-02W Type BBY52-02L BBY52-02W Package TSLP-2-1 SCD80 Configuration single, leadless
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BBY52.
BBY52-02L
BBY52-02W
SCD80
marking code INFINEON
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PDF
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bat62-02l
Abstract: No abstract text available
Text: BAT62-02L Silicon Schottky Diode Preliminary data Low barrier diode for detectors up to GHz 2 frequencies Ultra small leadless package 1 1 2 EHA07001 Type BAT62-02L Marking L Pin Configuration 1=C 2=A Package TSLP-2 - Maximum Ratings Parameter Symbol Diode reverse voltage
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BAT62-02L
EHA07001
Aug-24-2001
bat62-02l
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