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    Taiwan Semiconductor TSG60N100CEC0

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    DIODE B12 51

    Abstract: TSG60N100CE IGBT 1000V .200A tsg60n100 B12 68 diode IGBT 1000V 60A
    Text: TSG60N100CE N-Channel IGBT with FRD. TO-264 Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES V VGES (V) IC (A) 1000 ±20 60 General Description The TSG60N100CE using proprietary trench design and advanced NPT technology, the 1000V NPT IGBT offers


    Original     		TSG60N100CE O-264 TSG60N100CE 25pcs DIODE B12 51 IGBT 1000V .200A tsg60n100 B12 68 diode IGBT 1000V 60A PDF