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    TSFF5510 Price and Stock

    Vishay Semiconductors TSFF5510

    EMITTER IR 870NM 100MA RADIAL
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    DigiKey TSFF5510 Bulk 81 1
    • 1 $1.56
    • 10 $0.987
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    Vishay Semiconductors TSFF5510-CSZ

    EMITTER
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    Vishay Intertechnologies TSFF5510

    Ir Emitter, 870Nm, T-1 3/4, Through Hole; Viewing Angle:38°; Diode Case Style:T-1 3/4 (5Mm); Forward Current If(Av):100Ma; Forward Voltage Vf Max:1.45V; Rise Time:15Ns; Fall Time Tf:15Ns; Operating Temperature Min:-40°C; Msl:- Rohs Compliant: Yes |Vishay TSFF5510
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    Newark TSFF5510 Bulk 4,000
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    Bristol Electronics TSFF5510 992
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    Quest Components TSFF5510 16
    • 1 $1.8
    • 10 $1.44
    • 100 $0.9
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    Vishay BLH TSFF5510

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    Bristol Electronics TSFF5510 21 4
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    • 10 $1.35
    • 100 $0.8775
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    TSFF5510 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSFF5510 Vishay Semiconductors Infrared, UV, Visible Emitters, Optoelectronics, IR EMITTER HIGH SPEED 870NM 5MM Original PDF
    TSFF5510 Vishay Siliconix High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Original PDF

    TSFF5510 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • 21061 Package type: leaded Dimensions: T-1¾ ∅ 5 mm Peak wavelength: λp = 870 nm High reliability


    Original     		TSFF5510 2002/95/EC 2002/96/EC TSFF5510 08-Apr-05 PDF

    TSFF5510

    Abstract: No abstract text available
    Text: TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • 21061 DESCRIPTION TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and


    Original     		TSFF5510 TSFF5510 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSFF5510 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: p = 870 nm


    Original     		TSFF5510 TSFF5510 2002/95/trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSFF5510 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: p = 870 nm


    Original     		TSFF5510 TSFF5510 2002/95/l 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    TSFF5510

    Abstract: No abstract text available
    Text: TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 870 nm


    Original     		TSFF5510 2002/95/EC 2002/96/EC TSFF5510 11-Mar-11 PDF

    TSFF5510

    Abstract: No abstract text available
    Text: TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero Description TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and high speed, molded in a clear, untinted, plastic package.


    Original     		TSFF5510 TSFF5510 2002/95/EC 2002/96/EC 08-Apr-05 PDF

    Untitled

    Abstract: No abstract text available
    Text: TSFF5510 www.vishay.com Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Peak wavelength: p = 870 nm


    Original     		TSFF5510 2002/95/EC 2002/96/EC TSFF5510 11-Mar-11 PDF

    TSFF5510

    Abstract: sr235
    Text: TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • Package type: leaded Package form: T-1¾ Dimensions in mm : ∅ 5 Leads with stand-off Peak wavelength: λp = 870 nm


    Original     		TSFF5510 2002/95/EC 2002/96/EC TSFF5510 18-Jul-08 sr235 PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Optoelectronics - IR Emitters with Radient Intensity up to 600 m/W/sr at 100 mA Infrared Emitters 830 nm, 850 nm, and 870 nm High Intensity and High Optical Power Infrared Emitters KEY FEATURES


    Original     		VSMY3850 TSHG8200 TSHG5510 VSMY7850X01 TSFF5410 TSFF5510 VSMF4720 TSFF5210 VSMY7852X01 VMN-PT0211-1311 PDF

    TSSP4038

    Abstract: No abstract text available
    Text: V i s h ay I nte r tec h nolog y, I nc . OPTOELECTRONICS Optoelectronics – Products for Industrial Applications Guide to Industrial Applications TABLE OF CONTENTS Introduction. 2


    Original     		VMN-MS6520-1311 TSSP4038 PDF

    mdd 2605

    Abstract: HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943
    Text: 755 Technical portal and online community for Design Engineers - www.element-14.com Optoelectronics, Solid State Illumination & Displays Page Alphanumeric LCD Modules . . . . . . . . . . . . . . . . . 903 Alphanumeric LED Displays . . . . . . . . . . . . . . . . . 900


    Original     		element-14 element14 mdd 2605 HCPL 1458 8 pin opto KS0108 128X64 graphical LCD mdd 2601 transistor chn 952 hitachi INVC 618 Data Vision P135 H4 led smd headlight bulb transistor CHN 64 946 transistor chn 943 PDF

    Leader 8020 schematics Oscilloscope

    Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
    Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		vse-db0103-0810 Leader 8020 schematics Oscilloscope smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s PDF

    sensor BPW34 application note

    Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . G uide to Industr ial A pplic ations OPTOELECTRONICS OPTOELECTRONICS A PPL I CAT I O N S G U I D E w w w. v i s h a y. c o m OPTOELECTRONICS Guide to Industrial Applications Introduction As the world´s leading supplier of infrared emitters, photo detectors, and optical sensors,


    Original     		VMN-MS6520-1012 sensor BPW34 application note touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note PDF

    TSUS3400

    Abstract: VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS INFRARED EMITTERS, PHOTO DETECTORS, AND OPTICAL SENSORS SELECTOR GUIDE w w w. v i s h a y. c o m INFRARED EMITTERS, PHOTO DETECTORS, AND OPTICAL SENSORS Vishay Semiconductors Infrared Emitters


    Original     		VMN-SG2123-1010 TSUS3400 VCNL4000 VISHAY VSLB3940 DATASHEET smartphone proximity sensor TEMT6200FX01 BPW41N infrared emitters and detectors TCND5000 TCRT1010 TEMD6010FX01 PDF

    A 69157 scr

    Abstract: HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41
    Text: ND3% BASE1 XXXX4641-1306-1-P 1306 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 14:59 TS:TS date TS time LEDS & ACCESSORIES Find Datasheets Online LED DESIGN KITS • THROUGH-HOLE LEDS POWER LINE DESIGNER KIT HIGH-INTENSITY LED LAMPS CONT. T- 13⁄4 (5mm)


    Original     		74K5145 74K5144 74K5146 74K5147 74K5166 74K5170 71K0256 71K0273 71K0255 71K0272 A 69157 scr HCPL 1458 TRANSISTOR SMD 431H SMPS 666 VER 2.3 SMPS 666 VER 2.1 acsl 086 s LHi 878 2057 LED dot matrix display 5x7 smd ic A9A 42-M41 PDF

    TSHG8200

    Abstract: CCTV infrared VSMY1850
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . 8 3 0 nm, 850 nm, a nd 870 nm • Radiant intensity up to 600 mW/sr at 100 mA • Broad option of viewing angles from ± 60° to ± 3° • Up to 5x longer life than competing devices BENEFITS • Reduce the number of emitters required to produce equivalent optical power –


    Original     		VMN-PT0211-1101 TSHG8200 CCTV infrared VSMY1850 PDF

    sensor BPW34 application note

    Abstract: CEA-2038 TSOP4438 touch sensitive siren using transistor VSMY2850 BP104 application note TEMD6200 TSOP58038 vo2223 TEMD6200FX01
    Text: V ishay I ntertechnolog y, I nc . Optoelectronics – Products for Industrial Applications AND TEC I INNOVAT O L OGY Guide to Industrial Applications N HN OPTOELECTRONICS O 19 62-2012 TABLE OF CONTENTS


    Original     		VMN-MS6520-1201 sensor BPW34 application note CEA-2038 TSOP4438 touch sensitive siren using transistor VSMY2850 BP104 application note TEMD6200 TSOP58038 vo2223 TEMD6200FX01 PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors Reflective Sensors – Analog Tr a n s m i s s i v e S e n s o r s – A n a l o g


    Original     		VCNL4020X01 VCNL3020 AEC-Q101 VCNL4010 VCNL4020 VMN-SG2123-1502 PDF

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Optoelectronics エミッタ, ディテクタ, センサー Optoelectronics - エミッタ, ディテクタ, センサー 赤外線エミッタフォトディテクタ、オプティカルセンサー 赤外線エミッタ


    Original     		VMN-SG2180-1305 PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Optoelectronics - Emitters, Detectors, Optical Sensors Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors


    Original     		VCNL4010 VCNL4020 VCNL3020 VMN-SG2123-1404 PDF

    Eye Safety

    Abstract: No abstract text available
    Text: Eye Safety www.vishay.com Vishay Semiconductors Eye Safety Risk Assessment of Infrared Emitting Diodes According IEC 62471 based on CIE S009 INTRODUCTION RISK ASSESSMENT FOR LED - APPLICATIONS Product safety legislation (e.g. general product safety laws


    Original     		22-Jan-15 Eye Safety PDF