TSF20H120C Search Results

TSF20H120C Price and Stock

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Taiwan Semiconductor TSF20H120C DIODE ARR SCHOTTKY 120V ITO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TSF20H120C	Tube			1,000	1 - 10 - 100 - 1000 $0.52547 10000 $0.52547	Buy Now
Avnet Americas	TSF20H120C	Tube			1,000	1 - 10 - 100 - 1000 $0.44815 10000 $0.43648	Buy Now
Future Electronics	TSF20H120C				1,000	1 - 10 - 100 - 1000 $0.49 10000 $0.49	Buy Now
Taiwan Semiconductor TSF20H120C-S DIODE SCHOTTKY 120V 10A ITO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TSF20H120C-S	Tube			1,000	1 - 10 - 100 - 1000 $0.48892 10000 $0.48892	Buy Now
Avnet Americas	TSF20H120C-S	Tube			1,000	1 - 10 - 100 - 1000 $0.47914 10000 $0.40102	Buy Now
Mouser Electronics	TSF20H120C-S					1 - 10 - 100 - 1000 $0.506 10000 $0.433	Get Quote
Taiwan Semiconductor TSF20H120C C0 - Rail/Tube (Alt: TSF20H120C C0)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TSF20H120C C0	Tube			1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

TSF20H120C Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TSF20H120C C0G		Taiwan Semiconductor	Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY SCHOTT 120V ITO220AB		Original	PDF
TSF20H120C-S C0G		Taiwan Semiconductor	Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 120V 10A ITO220AB		Original	PDF

TSF20H120C Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TSF20H120C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency	Original	TSF20H120C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1309048	PDF
Untitled Abstract: No abstract text available Text: TSF20H120C creat by ART Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency	Original	TSF20H120C 2011/65/EU 2002/96/EC ITO-220AB 22-B102 D1307012	PDF
Untitled Abstract: No abstract text available Text: TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and	Original	TSF20H100C TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401006	PDF
Untitled Abstract: No abstract text available Text: TSF20H100C thru TSF20H200C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and	Original	TSF20H100C TSF20H200C 2011/65/EU 2002/96/EC ITO-220AB D1404001	PDF
Untitled Abstract: No abstract text available Text: TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability	Original	TSF20H100C TSF20H150C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102 D1401006	PDF