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    TRW RF TRANSISTORS Search Results

    TRW RF TRANSISTORS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRW RF TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    trw rf

    Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max V BR CBO foac Max Gp Po N.F. at fT••t Ie Max (W) (Vl (Hz) (dB) (W) jdB) (Hz) JA) PD Mati. Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) 5 10 UMOB55 RZ2731B60W


    Original     		PDF UMOB55 RZ2731B60W RZ2833B60W RZ3135B50W OME25 OME30L MKB12100W5 BAL0204 UMIL60 UMIL70 trw rf ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130

    TPV 3100

    Abstract: TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission
    Text: Order this document by AN1034/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1034 THREE BALUN DESIGNS FOR PUSH-PULL AMPLIFIERS Single RF power transistors seldom satisfy today’s design criteria; several devices in separate packages1, or in the same package balanced, push-pull or dual transistors , must


    Original     		PDF AN1034/D AN1034 TPV 3100 TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission

    TPV 3100

    Abstract: TPV-3100 trw rf semiconductors tpv3100 transistor TPV 3100 motorola balun trw rf motorola balun an TPM-4100 application note motorola semiconductor RF CATALOG
    Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1034/D AN1034 Freescale Semiconductor, Inc. Three Balun Designs for PushĆPull Amplifiers Single RF power transistors seldom satisfy today’s design criteria; several devices in separate packages1, or in the


    Original     		PDF AN1034/D AN1034 TPV 3100 TPV-3100 trw rf semiconductors tpv3100 transistor TPV 3100 motorola balun trw rf motorola balun an TPM-4100 application note motorola semiconductor RF CATALOG

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor RF2123 TA0012 HBT transistor gsm cellular power amplifier trw rf transistors
    Text: TA0012   TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier         efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain GSM power amplifier IC is ideal for maximizing talk time – a key


    Original     		PDF TA0012 RF2123: RF2123 16-lead trw RF POWER TRANSISTOR trw rf transistor TA0012 HBT transistor gsm cellular power amplifier trw rf transistors

    trw rf transistor

    Abstract: HBT transistor RF2123 cellular phone amplifier power control transistor TA0012 Class AB AMPLIFIER 4W trw RF POWER TRANSISTOR
    Text: TA0012   TA0012 RF2123: New High Power, High Efficiency HBT GSM Power Amplifier         efficiency is extremely important. Sixty percent total efficiency for a two-stage, 30dB gain GSM power amplifier IC is ideal for maximizing talk time – a key


    Original     		PDF TA0012 RF2123: RF2123 16-lead trw rf transistor HBT transistor cellular phone amplifier power control transistor TA0012 Class AB AMPLIFIER 4W trw RF POWER TRANSISTOR

    BD291

    Abstract: 2SC3883 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO PD Max r hFE fT 'CBO Max Max Mln (Hz) (A) (8) on ON) 100 100 100 100 100 100 50 50 50 50 50 100 50 218 218 30 30 75 75 75 75 75 75 75 75 80 60 60 70 80 22 22 22 22 22


    Original     		PDF DTS802 DTS804 STI802 STI804 2SC3658 2SC3883 2SD1455 2SD1911 BD291 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035

    AN5337 ca3028

    Abstract: ca3028a AN5337 CA3028B trw rf transistor ca3028 trw RF POWER TRANSISTOR AN5337 equivalent RF amplifiers in the HF and VHF JB22
    Text: Application of the CA3028 and Integrated-Circuit RF Amplifiers in the HF and VHF Ranges Application Note Introduction The CA3028A and CA3028B integrated circuits are singlestage differential amplifiers. Each circuit also contains a constant-current transistor and suitable biasing resistors. The


    Original     		PDF CA3028 CA3028A CA3028B 100MHz CA3028A CA3028B AN5337 ca3028 AN5337 trw rf transistor trw RF POWER TRANSISTOR AN5337 equivalent RF amplifiers in the HF and VHF JB22

    RF2131

    Abstract: TA0013 trw rf transistor HBT transistor
    Text: TA0013   TA0013 RF2131: New High Efficiency HBT Analog Cellular Power Amplifier        RF Micro Devices introduces a new power amplifier for Analog Cellular applications based on revolutionary HBT Heterojunction Bipolar Transistor technology.


    Original     		PDF TA0013 RF2131: 824MHz 849MHz 420mA 16-lead RF2131 Bm/30kHz, TA0013 trw rf transistor HBT transistor

    trw rf transistor

    Abstract: RF2131 TA0013 trw RF POWER TRANSISTOR
    Text: TA0013   TA0013 RF2131: New High Efficiency HBT Analog Cellular Power Amplifier         operated applications, the power-added or total efficiency is extremely important. Sixty percent total efficiency for a two-stage, 25dB gain AMPS/ETACS


    Original     		PDF TA0013 RF2131: RF2131 Bm/30kHz, trw rf transistor TA0013 trw RF POWER TRANSISTOR

    2N5109 motorola

    Abstract: 2N5109 motorola reliability trw rf transistor trw RF POWER TRANSISTOR CATV Wideband Ferrite Transformer Splitter uhf linear amplifier module trw rf hybrid amp catv bridge amplifier 2n5109 MOTOROLA reliability report fiber optic FM Modulator
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1024/D SEMICONDUCTOR APPLICATION NOTE AN1024 RF LINEAR HYBRID AMPLIFIERS Two sources of a new family of medium power broadband gain blocks for RF applications. Freescale Semiconductor, Inc.


    Original     		PDF AN1024/D AN1024 2N5109 motorola 2N5109 motorola reliability trw rf transistor trw RF POWER TRANSISTOR CATV Wideband Ferrite Transformer Splitter uhf linear amplifier module trw rf hybrid amp catv bridge amplifier 2n5109 MOTOROLA reliability report fiber optic FM Modulator

    w54 transistor

    Abstract: TA0014 vhf antenna mtbf RF2155 trw rf transistor w54* transistor
    Text: TA0014  TA0014 Amp RF2155: High Efficiency HBT Low Voltage Programmable Gain Power         RF Micro Devices introduces a new power amplifier with digital gain control for low voltage applications. The power amplifier operates up to 1GHz and delivers


    Original     		PDF TA0014 RF2155: 900MHz 400MHz w54 transistor TA0014 vhf antenna mtbf RF2155 trw rf transistor w54* transistor

    RF2108

    Abstract: cellular phone amplifier power control transistor trw rf transistor 48v battery charger schematic diagram schematic diagram 48v battery charger TA0-011 Helical antenna mtbf schematic diagram 48V automatic battery charger TA0011
    Text: TA0011  TA0011 RF2108: A Linear, High Efficiency, HBT, CDMA Power Amplifier         RF Micro Devices introduces a new linear power amplifier for CDMA applications based on their HBT Heterojunction Bipolar Transistor technology. This power


    Original     		PDF TA0011 RF2108: 29dBm 16-lead RF2108 27dBm cellular phone amplifier power control transistor trw rf transistor 48v battery charger schematic diagram schematic diagram 48v battery charger TA0-011 Helical antenna mtbf schematic diagram 48V automatic battery charger TA0011

    vhf antenna mtbf

    Abstract: RF2115 w54* transistor RF2155 TA0014 w54 transistor trw rf transistor trw RF POWER TRANSISTOR
    Text: TA0014  TA0014 Amp RF2155: High Efficiency HBT Low Voltage Programmable Gain Power         RF Micro Devices introduces a new power amplifier with digital gain control for low voltage applications. The power amplifier operates up to 1GHz and delivers


    Original     		PDF TA0014 RF2155: 900MHz 400MHz RF2155 vhf antenna mtbf RF2115 w54* transistor TA0014 w54 transistor trw rf transistor trw RF POWER TRANSISTOR

    BF907

    Abstract: BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Po Max W Gp V(BR)CBO (V) Po N.F. at. MatI. Toper Max °C (W) Package Style UHFIMicrowave Transistors, Bipolar NPN (Co nt' d) 5 10 15 20 25 30 35 40 45 50 BFQ73S BFR96 AT41435-5 AT420S5 AT414S5


    Original     		PDF BFQ73S BFR96 AT41435-5 AT420S5 AT414S5 AT41435-3 AT41470 AT41410 NE9S203 NE9S20S BF907 BF900 BF910 BF914 BF479S Siemens BF479T NE56755 BF540 BFQ14

    TA0003

    Abstract: interleaver QUALCOMM MSM 2
    Text: TA0003  TA0003 HBT Technology Adds Power to CDMA Chip Set          Efficient bandwidth utilization and low operating power characterize code-division-multiple-access CDMA transmissions, capturing the interest of several major


    Original     		PDF TA0003 RF9908 TA0003 interleaver QUALCOMM MSM 2

    TPV3100

    Abstract: TPV364 TP9380 244c-01 TP9383 TPV-3100 TPV-595A TPV3250B TPV5055B TPV385
    Text: RI CHARDS ON ELECTRONICS " T -i. ijw .m ,r| n n - 2>|^Ol u. •.v 14E DI 7734ÖC|ä Q0G0Sfl2 ^ - - 7— dH T h r* t iMrr i RF Transistors tor Broadcast Applications Motorola/TRW 88-108 MHz, FM Broadcast Band Device Pout Output PowerWatts Pm Input Power


    OCR Scan     		PDF TP9380 TP9383 TP9390 TPV394A TPV364 TPV385 TPV375 TPV387 TPV376 TPV3100 TPV3100 244c-01 TPV-3100 TPV-595A TPV3250B TPV5055B

    TRW2001

    Abstract: TRW2003 trw 2015 TRW2020 trw 2001 TRW201 TRW2010 TRW MICROWAVE trw rf transistors TRW2005
    Text: M OTORCLA SC XSTRS/R F 12E D | t>Bt75Sll Ü0ÖÖ372 0 | T MOTOROLA SEMICONDUCTOR TECHNICAL DATA TRW2000 Series The RF Line M icrowave Pow er Transistors , . . designed primarily for wideband, large-signal output and driver amplifier stages in the 1 to 2.3 GHz frequency range.


    OCR Scan     		PDF Bt75Sl TRW2000 171eC TRW2003 TRW2005 TRW2010 TRW2001 trw 2015 TRW2020 trw 2001 TRW201 TRW MICROWAVE trw rf transistors

    trw RF POWER TRANSISTOR

    Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
    Text: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .


    OCR Scan     		PDF

    MRA0610

    Abstract: MRA0610-40A MRA0610-18A MRA0610-3 MRA0610-9 trw rf semiconductors
    Text: MRA0610-3, MRA0610-9, MRA0610-18A, MRA0610-40A MIC roAMP P-Band Class C Power Transistors • • • • • • • 3 to 40 Watts Broadband 600-1000 MHz Internally Compensated* Gold Metalized Diffused Ballast Resistors MTTF Data Common Base M R A .25 Electrical C h a ra cte ristics fT,


    OCR Scan     		PDF mra0610-9, mra0610-18a, MRA0610-3 MRA0610-9 10-18A MRA0610-40A mra0610-3, mra061018a, mra061040a MRA0610 MRA0610-40A MRA0610-18A trw rf semiconductors

    TDC1014

    Abstract: TDC1046 Tdc1016 trw TIDC1014 trw resistor TDC1016 1016B7C 1016B7 capacitor 220 microfarad R20 marking
    Text: TDC1014 Use T D C 10 4 6 for N e w Designs Monolithic Video A/D Converter Features 6-Bit, 25M SPS • 6-Bit Resolution • 1/4 LSB Linearity The TRW TDC1014 is a 25 MegaSample Per Second MSPSI full- parallel (flash analog-to-digital converter, capable of


    OCR Scan     		PDF TIDC1014 TDC1046 25MSPS TDC1014 12MHz Tdc1016 trw TIDC1014 trw resistor TDC1016 1016B7C 1016B7 capacitor 220 microfarad R20 marking

    TRW52602

    Abstract: TRW 52602 TRW52102 52602 A 3121 IC trw rf transistors 1147 x motorola
    Text: MOTOROL A SC XSTRS/R F 1EE D | b3b?aS4 GÜfl f lBTS 1 | T~ 3 V MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA T RW 52102 Se rie s The RF Line Microwave Linear Power Transistors . designed primarily for wideband, large-signal output and driver amplifier stages in


    OCR Scan     		PDF

    GP131

    Abstract: 13F-1 MRW2015
    Text: MOTOROLA SC XSTRS/R F MbE D • b 3 b 7 2 5 4 O O lS O fll T-: MOTOROLA ■ SEMICONDUCTOR 7 ■ flOTb 0 1 a TECHNICAL DATA MRW2000 Series The RF Line M icrow ave Pow er Transisto rs 5.2 TO 9 dB 1-2.3 GHz 1 TO 20 WATTS MICROWAVE POWER TRANSISTORS . . . designed p rim arily fo r large-signal output and d rive r am p lifier stag es in th e 1 to


    OCR Scan     		PDF MRW2000 24GHz GP131 13F-1 MRW2015

    1016B7

    Abstract: 1016B7C 10 microfarad 50v capacitor TDC1016B7AX 1 microfarad tantalum capacitor
    Text: TRVw TDC1016 Video Speed D/A Converter Features 10-Bit, 2 0 M s p s • 20Msps Conversion Rate The TDC1016 is a bipolar monolithic digital-to-analog • 8, 9, Or 10-Bit Linearity • Voltage Output, No Amplifier Required converter which can convert digital data into an analog


    OCR Scan     		PDF TDC1016 10-Bit, TDC1016 20Msps 10-bit 1016B7 1016B7C 10 microfarad 50v capacitor TDC1016B7AX 1 microfarad tantalum capacitor

    TRANSISTOR ww1

    Abstract: 2U72 marking code ww1 ims g171 0171N6C RS-170 impedance match Diode marking WW1 diode ww1 77 TDC4611 LM1201
    Text: TMC0171, TMC0176 T R m w Color Palette with Triple 6-Bit DAC The TMC0171 and TMC0176 are triple 6-bit video DACs Features with 256 x 18 RAM look-up tables and microprocessor interfaces. The devices were designed specifically for • Pixel Rates Of 0 to 80M Hz


    OCR Scan     		PDF TMC0171, TMC0176 TMC0171 TMC0176 RS-170, 0176R2C4 TRANSISTOR ww1 2U72 marking code ww1 ims g171 0171N6C RS-170 impedance match Diode marking WW1 diode ww1 77 TDC4611 LM1201