voice scrambling
Abstract: ambulance TAG Semiconductor speech scrambler voice encryption ic Variable split band scrambling police TRW speech
Text: CML Semiconductor Products AN/Sec/Gen /1 November 1997 Inversion Security Devices Split-Band Scrambling Furnishes Voice Security Unwanted consequences of third-party radio communications eavesdropping include foiled drug raids, unsolved burglaries and pirated business opportunities.
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ambulance
Abstract: voice encryption ic speech scrambler scrambling TAG Semiconductor Variable split band scrambling trw 10001 frequency hopping tactical
Text: APPLICATION NOTE Variable Split-Band Scrambling VSB Variable Split-Band Scrambling (VSB) Furnishes Voice Security Introduction Voice scrambling offers tactical security for radio dispatch communications. It takes so long, even for a dedicated eavesdropper, to unscramble your transmissions that the information would be worthless by then.
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WH 250-500
Abstract: LCD display intel 8080 COM16 SEG129
Text: ST Sitronix ST7573 132 x 33 Dot Matrix LCD Controller/Driver 1. INTRODUCTION ST7573 is a driver & controller LSI for graphic dot-matrix liquid crystal display systems. ST7573 contains 132 segment and 33 common driver circuits. This chip is connected directly to a microprocessor, accepts 3-line, 4-line serial peripheral
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ST7573
ST7573
Fig24
Fig25
WH 250-500
LCD display intel 8080
COM16
SEG129
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TMC2010
Abstract: TDC1010 TMC2110 TMC2210 ADSP-1010 P40Y block diagram of 8*8 array multiplier 32 bit booth multiplier for fixed point
Text: TRW TM C2210 CMOS Multiplier-Accumulator Fe a tu re s 1 6 x 1 6 Bit, 65, 80, 100, 160ns • 65, 80, 100 Or 160ns M ultiply-Accum ulate Time • 1 6 x 1 6 Bit Parallel M ultiplication W ith Accumulation To 3 5-B it Result • Selectable Accum ulation, Subtraction, Rounding And
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TMC2210
16x16
160ns
TMC2210
160ns.
32-bit
35-bit
16-bit
TMC2010
TDC1010
TMC2110
ADSP-1010
P40Y
block diagram of 8*8 array multiplier
32 bit booth multiplier for fixed point
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TMC2010
Abstract: trw radar ac 2210n0c1 tdc1010 ADSP-1010 TMC2210 2210j J61X TMC2210G8C 2210NOC
Text: TRW TM C2210 CM O S Multiplier-Accumulator Fe a tu re s 1 6 x 1 6 Bit, 65, 80, 100, 160ns • 65, 80, 100 Or 160ns M ultiply-Accum ulate Time • 1 6 x 1 6 Bit Parallel M ultiplication W ith Accumulation To 3 5-B it Result • Selectable Accum ulation, Subtraction, Rounding And
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TMC2210
16x16
160ns
TMC2210
160ns.
32-bit
35-bit
16-bit
TMC2010
trw radar ac
2210n0c1
tdc1010
ADSP-1010
2210j
J61X
TMC2210G8C
2210NOC
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TMC2010
Abstract: CY7C510 2210J0 y12 t 930 TDC1010 tmc2110
Text: TRW TMC2210 C M O S Multiplier-Accumulator Features 1 6 x 1 6 Bit, 45, 55, 65, 80, 95ns • 45, 55, 65, 80 Or 95ns Multiply-Accumulate Time The TMC2210 is a high-speed 1 6 x1 6 bit digital multiplier-accumulator which is available in speed bins of 45, 55, 65, 80 or 95ns. Input data may be specified as
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TMC2210
35-Bit
TMC2210
90X00181
11DENTIFIER
40G02412
TMC2010
CY7C510
2210J0
y12 t 930
TDC1010
tmc2110
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TRW 2210
Abstract: 2210G8C c2210 2210j 2210G8 TMC2210 adsp-1010
Text: TMC2210 T CMOS Multiplier-Accumulator 1 6 x 1 6 Bit, 65, 80, 100, 160ns The T M C 2210 is a high-speed 1 6 x 1 6 bit digital m ultiplier-accum ulator w h ich is available in fo u r speed bins of 65, 80, 100 or 160ns. Input data may be specified as tw o 's com plem ent or unsigned m agnitude
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TMC2210
160ns
160ns.
16-bit
TRW 2210
2210G8C
c2210
2210j
2210G8
TMC2210
adsp-1010
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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HM511000
Abstract: dynamic ram 8 bit hm511000 HM511000P M511000 HM511000-12 HM511000-10 HM511000JP-12 DG 402 rp HM511000ZP-12 ir 2210 ic
Text: HM511000 Series 1048576-word x 1-bit CMOS Dynamic Random Access Memory The Hitachi HM511000 Series is a CMOS dynamic RAM organized 1,048,576-word x 1-bit. HM511000 has realized higher density, higher performance and various functions by employing 1.3/im CMOS process technology and some new CMOS circuit
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HM511000
1048576-word
576-word
HM511000,
18-pin
20-pin
dynamic ram 8 bit hm511000
HM511000P
M511000
HM511000-12
HM511000-10
HM511000JP-12
DG 402 rp
HM511000ZP-12
ir 2210 ic
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SAMPLE HOLD AMPLIFIER single supply
Abstract: ICL7650ITV AIR FLOW DETECTOR MAR6
Text: / T L I T 1 Ç A R _ LTC1052/LTC7652 TECHNOLOGY Chopper-Stabilized Operational Amplifier CSOA KflTURCS DCSCRIPTIOn • Guaranteed Max. Offset 5/*V ■ Guaranteed Max. Offset Drift 0.05/xV/°C ■ Typ. Offset Drift 0.0 W ° C ■ Excellent Long Term Stability
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LTC1052
LTC7652
150-C
45BC/W
14-Lead
110-C
SAMPLE HOLD AMPLIFIER single supply
ICL7650ITV
AIR FLOW DETECTOR
MAR6
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Untitled
Abstract: No abstract text available
Text: HM511002A S eries-1,048,576-word x 1-bit CMOS Dynamic RAM • DESCRIPTION H M 5U 002A P Series The Hitachi HM511002A Series is a CMOS dynamic RAM organized 1,048,576word x 1-bit. HM511002A has realized higher density, higher performance and vari
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HM511002A
576-word
576word
18-pin
20-pin
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HM511002AP-6
Abstract: T10E
Text: HM511002A Series 1,048,576-word x 1-bit CMOS Dynamic RAM • DESCRIPTION H M 5U 002A P Series The Hitachi H M 511002A Series is a C M O S dynamic RAM organized 1,048,576word x 1-bit. H M 511002A has realized higher density, higher performance and vari ous functions by employing 1.3 jum C M OS process technology and some new
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HM511002A
576-word
18-pin
20-pin
HM511002AP-6
T10E
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Untitled
Abstract: No abstract text available
Text: HITACHI/ MCU/MPU ^2 I>e | 44TL204 □ Q l E 3 0 b 5 -4TÔ6 2 Ö 4 H 1 iACH i / M C U /M P U 92D 12306 dH HD63085-—-—T-53-333bDI CEP Document Image Compression and Expansion Processor PRELIM INARY- The HD63085 (DICEP) is a LSI th a t compresses (or encodes)
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44TL204
HD63085---------------â
HD63085
MA/MD15
44TLi204
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181-D
Abstract: 54AC11175 74AC11175 109-D3388
Text: 54AC11175, 74AC11175 QUADRUPLE D-TYPE FLIP-FLOPS WITH CLEAR TI0109— D3388, DECEMBER 1989— REVISED M ARCH 1990 Applications Include: Buffer/Storage Registers, Shift Registers, Pattern Generators 5 4 A C 1 1175 . . . J P ACKA G E 74A C 11 1 75 . . . D W O R N P ACKA G E
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54AC11175,
74AC11175
TI0109â
D3388,
500-mA
300-mil
181-D
54AC11175
74AC11175
109-D3388
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814400a
Abstract: MB814400A
Text: March 1992 Edition 1.0 DATA SHEET FUJITSU : M B 8 14400A-60/-70/-80 CMOS 1 M X 4 BIT FAST PAGE MODE DRAM CMOS 1,048,576 x 4 bit Fast Page Mode Dynamic RAM The Fujitsu M B 814400A is a fully decoded C M O S Dynamic RA M D R A M that contains 4,194,304 memory cells accessible in 4 -b it increments. T h e M B 814400A features a f a s t pag e’ mode of
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4400A-60/-70/-80
14400A
024-b
14400Ain
F26001S
MB814400A-60
MB814400A-70
MB814400A-80
814400a
MB814400A
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d038
Abstract: KM44V4004B KM44V4104BK KMM374F400BK CA5B
Text: KMM374F400BK KMM374F410BK DRAM MODULE KMM374F400BK & KMM374F410BK EDO Mode without buffer 4Mx72 DRAM DIMM with ECC based on 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F40 1 0BK is a 4M bit x 72 Dynamic RAM high density memory module. The
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KMM374F400BK
KMM374F41
KMM374F410BK
4Mx72
KMM374F40
300mii
168-pin
KMM374F4C)
d038
KM44V4004B
KM44V4104BK
KMM374F400BK
CA5B
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HM511000P
Abstract: HM511000P12S HM511000 HM511000ZP-10S HM511000-12
Text: -Preliminary HM511000S Serles 1048576-word x 1-bit CMOS Dynamic Random Access Memory The Hitachi HM511000S series is a CMOS dynamic RAM or ganized 1048576-word x 1-bit. HM511000S has realized higher density, higher performance and various functions by employing
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HM511000S
1048576-word
18-pin
20-pin
HM511000P
HM511000P12S
HM511000
HM511000ZP-10S
HM511000-12
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HM50464P-12
Abstract: s - ck5t HMS0464 HM50464CP-12 HM50464CP12
Text: H M 50464 Series 65536-word x 4-bit Dynamic Random Access Memory • • • • • • • • • • FEATURES Page mode capability Single 5V ±10% On chip substrate bias generator Low power: 350 mW active, 20 mW standby High speed: Access Time 120ns/150ns/200ns
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65536-word
120ns/150ns/200ns
HM50464P
P-18B
50464CP
HM50464P-12
HMS0464P-15
HM50464P-20
HM50464CP-12
HM50464CP-15
s - ck5t
HMS0464
HM50464CP12
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AC723
Abstract: TRW10 NE 5322 TRW1030
Text: AC723 • ACT723 54AC/74AC723 • 54ACT/74ACT723 64 x 9 First-In, First-Out Memory Connection Diagrams Description The ’AC/’ACT723 is an expandable first-in, first-out memory organized as 64 words by 9 bits. An 85 MHz shift-in and 60 MHz shift-out typical data
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AC723
ACT723
54AC/74AC723
54ACT/74ACT723
ACT723
54/74AC/ACT
AC723
TRW10
NE 5322
TRW1030
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Untitled
Abstract: No abstract text available
Text: ò rà er Alnmbe.r Mi/Tb^T NEW PRODUCT HB56A840B Series 8,388,608-Word X 40-Bit High Density Dynamic RAM Module - Under development - ^ H IT A C H I Rev.2 May. 22.1992 Description The HB56A840B is a 8M X 40 dynamic RAM module, mounted 20 pieces of 16Mbit ORAM
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HB56A840B
608-Word
40-Bit
16Mbit
HM5116400J)
72-pin
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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SG73/D
triac zd 607
1n5204
CA2820 TRW
2N4427 equivalent bfr91
2N6823
842 317 SO8
BD243 PINOUT
BD529
bf506
BF845
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Untitled
Abstract: No abstract text available
Text: 16 x 1 6 PARALLEL CMOS MULTIPLIER-ACCUMULATOR IDT7210L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • The IDT7210 is a high-speed, low-power 16 x 16-bit parallel m ultiplier-accum ulatorthatis ideally suited for real-time digital signal processing applications. Fabricated using CMOS
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IDT7210L
IDT7210
35-bit
1010J,
CY7C510,
IL-STD-883,
5962-ntrol
IDT7210L
MIL-STD-883,
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Untitled
Abstract: No abstract text available
Text: HM514266 Series 262,144-Word x 4-Bit Dynamic Random Access Memory • DESCRIPTION HM 514266AP Series The Hitachi H M 514266A is a C M O S dynamic RAM organized 262,144-word x 4-bit. H M 514266A has realized higher density, higher performance and various func
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HM514266
144-Word
514266AP
14266A
20-pin
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Untitled
Abstract: No abstract text available
Text: _LTC1052/LTC7652 Chopper-Stabilized Operational Amplifier CSOA K R TU R C S DCSCftlPTIOn • Guaranteed Max. Offset 5nM ■ Guaranteed Max. Offset Drift 0.05/iV/°C ■ Typ. Offset Drift 0.0y V / °C ■ Excellent Long Term Stability 100nV/VMonth
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LTC1052/LTC7652
05/iV/
100nV/VMonth
120dB
120dB
LTC1052
LTC7652
110eC
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