BYG-100
Abstract: IDT70P269 BYG100 7146 BY100- 70P259 BY100 70P24 70P25
Text: VERY LOW POWER 1.8V 16K/8K/4K X 16 DUAL-PORT STATIC RAM IDT70P269/259/249L Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location Both ports configurable to standard SRAM or timemultiplexed address/data interface
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16K/8K/4K
IDT70P269/259/249L
BY100)
70P269
70P259
70P249
BYG-100
IDT70P269
BYG100
7146
BY100- 70P259
BY100
70P24
70P25
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qml-38535
Abstract: M38510-24502BVA as 15-f HM1-6514S8
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED C Add device types 03, 04, 05, 06, and 07. Add approved source CAGE 66632. Add case outline Y. Editorial changes throughout. Change to military drawing format and new code ident. 67268. 1987 OCT 23 M. A. Frye
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M38510
qml-38535
M38510-24502BVA
as 15-f
HM1-6514S8
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Untitled
Abstract: No abstract text available
Text: VERY LOW POWER 1.8V 16K/8K/4K X 16 DUAL-PORT STATIC RAM IDT70P269/259/249L Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location Both ports configurable to standard SRAM or timemultiplexed address/data interface
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16K/8K/4K
IDT70P269/259/249L
BY100)
70P269
70P259
70P249
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PDF
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IDT70P245
Abstract: No abstract text available
Text: VERY LOW POWER 1.8V 16K/8K/4K X 16 DUAL-PORT STATIC RAM IDT70P265/255/245L Features ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location One port with dedicated time-muliplexed address/data ADM interface
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16K/8K/4K
IDT70P265/255/245L
IDT70P265/255/245L
70P265
70P255
70P245
70P265/255/245
PA1109-01)
IDT70P245
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BY100
Abstract: 245l A13R-A0R 70P25
Text: VERY LOW POWER 1.8V 16K/8K/4K X 16 DUAL-PORT STATIC RAM IDT70P265/255/245L Features ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous reads of the same memory location One port with dedicated time-muliplexed address/data ADM interface
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16K/8K/4K
IDT70P265/255/245L
BY100)
70P265
70P255
70P245
BY100
245l
A13R-A0R
70P25
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HT6116-7LL
Abstract: Volt, SPDM, CMOS SRAM CMOS SPDM Process HT6116-70 HT6116 -7LL HT6264-70 Holtek 0.8um, CMOS sram
Text: HT6116-70 2K x 8 Bit SRAM Features • • • • • • • Single 5V power supply Low standby and operating power – Standby: 5µW Typ. – Operating: 400mW (Typ.) 70ns (Max.) high speed access time Neither external clock nor refreshing required •
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HT6116-70
400mW
16384-bit
500mV
HT6264-70
HT6116-7LL
Volt, SPDM, CMOS
SRAM CMOS SPDM Process
HT6116 -7LL
HT6264-70
Holtek 0.8um, CMOS sram
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NTE2147
Abstract: No abstract text available
Text: NTE2147 Integrated Circuit 4K Static Random Access Memory SRAM Description: The NTE2147 is a 4096−bit static Random Access Memory (SRAM) in an 18−Lead DIP type package organized as 4096 words by 1−bit. Using a scaled NMOS technology, it incorporates an innovative
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NTE2147
NTE2147
4096-bit
18-Lead
200mV
-200mV
Note10.
Note12.
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Untitled
Abstract: No abstract text available
Text: FM28V102A 1-Mbit 64 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 64 K × 16 ❐ Configurable as 128 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes
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FM28V102A
FM28V102A
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Untitled
Abstract: No abstract text available
Text: FM28V102A 1-Mbit 64 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 64 K × 16 ❐ Configurable as 128 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes
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FM28V102A
FM28V102A
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Untitled
Abstract: No abstract text available
Text: September 2006 AS7C31025C 3.3V 128K X 8 CMOS SRAM Center power and ground Features • Industrial and commercial temperatures • Organization: 131,072 x 8 bits • High speed - 10/12 ns address access time - 5 ns output enable access time • Low power consumption via ship deselect
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AS7C31025C
32-pin,
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Untitled
Abstract: No abstract text available
Text: FM21LD16 2-Mbit 128 K x 16 F-RAM Memory Features • 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 16 ❐ Configurable as 256 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes ❐ 151-year data retention (see the Data Retention and
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FM21LD16
151-year
30-ns
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY FM28V102 1-Mbit 64 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 64 K × 16 ❐ Configurable as 128 K × 8 using UB and LB 14 ❐ High-endurance 100 trillion (10 ) read/writes
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FM28V102
151-year
30-ns
FM28V102
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HT6264-70
Abstract: No abstract text available
Text: HT6264-70 CMOS 8Kx8-Bit SRAM Features • • • • • • • • Single 5V power supply Low power consumption – Operating: 200mW Typ. – Standby: 5µW (Typ.) 70ns (Max.) high speed access time Memory expansion by pin OE • Common I/O using tri-state outputs
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HT6264-70
200mW
28-pin
HT6264-70
536-bit
500mV
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HT6264-70
Abstract: 8k8 rom
Text: HT6264-70 CMOS 8Kx8-Bit SRAM Features • • • • • Operating voltage: 5V Low power consumption – Operation: 200mW typ. – Standby: 5µW (typ.) 70ns (max.) high speed access time Memory expansion by pin OE • • • • Pin-compatible with standard 8K×8
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HT6264-70
200mW
28-pin
HT6264-70
536-bit
500mV
8k8 rom
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HT6116 -7LL
Abstract: HT6116-7LL HT6116 SRAM CMOS SPDM Process Volt, SPDM, CMOS Holtek 0.8um, CMOS sram
Text: HT6116-7LL CMOS 2Kx8-Bit SRAM Features • • • • • • • • • Single 5V power supply Low power consumption – Operating: 180mW Typ. – Standby: 5µ W (Typ.) 70ns (Max.) high speed access time Power down by pin CS Memory expansion by pin OE
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HT6116-7LL
180mW
24-pin
HT6116-7LL
384-bit
500mV
HT6116 -7LL
HT6116
SRAM CMOS SPDM Process
Volt, SPDM, CMOS
Holtek 0.8um, CMOS sram
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Untitled
Abstract: No abstract text available
Text: FM28V202A 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • Industrial temperature: –40 C to +85 C ■ ■ 44-pin thin small outline package (TSOP) Type II ■ Restriction of hazardous substances (RoHS) compliant 2-Mbit ferroelectric random access memory (F-RAM) logically
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FM28V202A
44-pin
151-year
30-ns
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Untitled
Abstract: No abstract text available
Text: FM28V202A 2-Mbit 128 K x 16 F-RAM Memory 2-Mbit (128 K × 16) F-RAM Memory Features • Industrial temperature: –40 C to +85 C ■ ■ 44-pin thin small outline package (TSOP) Type II ■ Restriction of hazardous substances (RoHS) compliant 2-Mbit ferroelectric random access memory (F-RAM) logically
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FM28V202A
44-pin
151-year
30-ns
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tD014
Abstract: CDIP2-T18 GDIP1-T18 001050b A81024
Text: REVISIONS LTR DESCRIPTION DATE APPROVED YR-M0-DA C Add device types 03, 04, 05, 06, and 07. Add approved source CAGE 66632. Add case outline Y. Editorial changes throughout. Change to military drawing format and new code ident. no. 67268. 1987 OCT 23 M. A. Frye
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8102401VX
8102402VX
M38510/24501BVX
M38510/24502BVX.
296-5377S"
BUL-103Â
-BUL-103.
001050b
tD014
CDIP2-T18
GDIP1-T18
A81024
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FPT-100P-M01
Abstract: mcl m01 94 MB82VP036
Text: February 1994 Edition 1.0 ADVANCE INFO. FUjlTSU DATASHEET MB82VP036 CMOS 32K x 36 SYNCHRONOUS SRAM CMOS 32768 WORDS BY 36-BIT SYNCHRONOUS STATIC RANDOM ACCESS MEMORY The Fujitsu MB82VP036 is a 1M bit CMOS Synchronous Static Random Access Memory SSRAM containing 1,179,648 memory cells accessible in a 36-bit
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MB82VP036
36-BIT
MB82VP036
QDDL057
FPT-100P-M01
mcl m01 94
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Untitled
Abstract: No abstract text available
Text: MOSEL MS6M 8512 PRELIMINARY 512K x 8 CMOS Static RAM Module FEATURES DESCRIPTION • 4Mb SRAM module compatible with JEDEC standard pinout for 512k x 8 SRAM The Mosel MS6M8512 is a 4 Megabit 4,194,304 bits static random access memory module organized as 512K
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MS6M8512
PID041
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Untitled
Abstract: No abstract text available
Text: September 1990 Edition 1.0 FUJITSU DATA SHEET MB82B81 15/-20 256K-BIT HIGH-SPEED BiCMOS SRAM - 256K Words x 1 Bit BiCMOS High-Speed Static Random Access Memory The Fujitsu MB82B81 is a static random access memory organized as 262,144 words x 1 bit and fabricated with a CMOS silicon gate process. BiCMOS technology is used in
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MB82B81
256K-BIT
MB82B81-15
MB82B81-20
MB82B81-20
24-LEAD
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TS280-A89Z
Abstract: No abstract text available
Text: TS280—A89Z December 1989 FUJITSU DATA SHEET • MB82B71-15/-20 64K BIT HIGH SPEED BI-CMOS SRAM 65,536-WORD x 1-BIT Bi-CMOS HIGH SPEED STATIC RANDOM ACCESS MEMORY The Fujitsu MB82B71 is a 65,536 words by 1 bits static random access memory fabricated with a
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TS280--
MB82B71-15/-20
536-WORD
MB82B71
300mil
24-LEAD
LCC-24P-M02)
TS280-A89Z
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Untitled
Abstract: No abstract text available
Text: November 1989 Edition 1.0 FUJITSU DATASHEET MB85420-40/-50 256K X 8 CMOS SRAM MODULE CMOS 262,144 WORDS x 8-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85420 is a fully decoded, CMOS static random access memory module consists of eight MB81C81A devices mounted on a 60-pin plastic board.
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MB85420-40/-50
MB85420
MB81C81A
60-pin
MB65420
MB81C81A,
MB85420-40)
MB85420-50)
500mV
MB85420-40
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Untitled
Abstract: No abstract text available
Text: MOSEL MS6134 4K X 8 CMOS Dual Port SRAM FEATURES DESCRIPTION • High-speed-35/45/55ns The M OSEL M S6134 is a 32,768 bit dual port static random access memory organized as 4,096 words by 8 bits allowing each port to independently access any location in memory. The M S6134 is ideal for systems that
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High-speed-35/45/55ns
S6134
325mW
MS6134
MS6134
PIDO03
MS6134-35PC
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