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    TRIPLE ISOLATED DIODES Search Results

    TRIPLE ISOLATED DIODES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    TRIPLE ISOLATED DIODES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BAS70VV

    Abstract: No abstract text available
    Text: BAS70VV 70 V, 70 mA Schottky barrier triple isolated diode in SOT666 Rev. 01 — 10 September 2004 Product data sheet 1. Product profile 1.1 General description Planar Schottky barrier triple diode with an integrated guard ring for stress protection. Three electrically isolated Schottky barrier diodes, encapsulated in a SOT666 ultra small


    Original     		PDF BAS70VV OT666 OT666 BAS70VV

    CMXD2004TO

    Abstract: marking D3 SOT26
    Text: Central CMXD2004TO TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM TRIPLE ISOLATED OPPOSING HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD2004TO consists of three 3 Isolated High Voltage Silicon Switching Diodes arranged


    Original     		PDF CMXD2004TO CMXD2004TO OT-26 X04TO 100mA 14-November marking D3 SOT26

    marking D3 SOT26

    Abstract: CMXD2004
    Text: Central CMXD2004 TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM TRIPLE ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD2004 type contains three 3 Isolated High Voltage Silicon Switching Diodes, manufactured by the epitaxial


    Original     		PDF CMXD2004 CMXD2004 OT-26 100mA marking D3 SOT26

    Untitled

    Abstract: No abstract text available
    Text: Central CMXD2004 TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM TRIPLE ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD2004 type contains three 3 Isolated High Voltage Silicon Switching Diodes, manufactured by the epitaxial


    Original     		PDF CMXD2004 CMXD2004 OT-26 100mA 14-November

    CMXD6001

    Abstract: marking D3 SOT26
    Text: CMXD6001 SURFACE MOUNT SUPERmini TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD6001 type contains three 3 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar


    Original     		PDF CMXD6001 OT-26 100mA CMXD6001 marking D3 SOT26

    marking code pa sot-26

    Abstract: No abstract text available
    Text: CMXD6001 SURFACE MOUNT SUPERmini TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD6001 type contains three 3 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar


    Original     		PDF CMXD6001 OT-26 100mA 14-November marking code pa sot-26

    CMKD6001

    Abstract: marking code K01 marking pa sot-363
    Text: CMKD6001 SURFACE MOUNT ULTRAmini TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD6001 type contains three 3 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar


    Original     		PDF CMKD6001 OT-363 100mA CMKD6001 marking code K01 marking pa sot-363

    marking code K01

    Abstract: marking pa sot-363 K01R1
    Text: CMKD6001 SURFACE MOUNT ULTRAmini TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD6001 type contains three 3 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar


    Original     		PDF CMKD6001 OT-363 100mA 13-November marking code K01 marking pa sot-363 K01R1

    D-68623

    Abstract: No abstract text available
    Text: GS150TA25104 GS150TI25104 Gallium Arsenide Schottky Rectifier Isolated Surface Mount Package Preliminary Data VRSM VRRM V V Type Part Number 250 250 GS150 TI25104 Triple Independent 250 250 GS150 TC25104 Triple Common cathode 250 250 GS150 TA25104 Triple Common anode


    Original     		PDF GS150TA25104 GS150TI25104 GS150 TI25104 TC25104 TA25104 GS150TC25104 D-68623

    GS150TA25110

    Abstract: Directed Energy D-68623 TI25110 92000
    Text: GS150TA25110 GS150TI25110 Gallium Arsenide Schottky Rectifier Isolated Surface Mount Package Preliminary Data VRSM VRRM V V Type Part Number 250 250 GS150 TI25110 Triple Independent 250 250 GS150 TC25110 Triple Common cathode 250 250 GS150 TA25110 Triple Common anode


    Original     		PDF GS150TA25110 GS150TI25110 GS150 TI25110 TC25110 TA25110 GS150TC25110 D-68623 GS150TA25110 Directed Energy TI25110 92000

    CMKD6001

    Abstract: PA marking code marking code K01
    Text: Central CMKD6001 SURFACE MOUNT ULTRAmini TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES TM Semiconductor Corp. TM DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD6001 type contains three 3 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy


    Original     		PDF CMKD6001 CMKD6001 OT-363 100mA 21-November PA marking code marking code K01

    diode marking 74

    Abstract: No abstract text available
    Text: CMKSH-3T SURFACE MOUNT ULTRAminiTM TRIPLE ISOLATED SILICON SCHOTTKY DIODES Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKSH-3T contains three 3 Isolated Silicon Schottky Diodes, epoxy molded in a SOT-363 surface mount package.


    Original     		PDF OT-363 100mA 21-November diode marking 74

    Untitled

    Abstract: No abstract text available
    Text: CMKD4448 SURFACE MOUNT ULTRAmini TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-363 CASE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD4448 type contains three 3 Isolated High Speed Silicon Switching Diodes, manufactured by the


    Original     		PDF CMKD4448 OT-363 100mA

    CMKD4448

    Abstract: R3 marking code MARKING R3 sot363 marking code 385 marking code D3 SOT363 sot-363 MARKING
    Text: CMKD4448 SURFACE MOUNT ULTRAmini TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES SOT-363 CASE Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD4448 type contains three 3 Isolated High Speed Silicon Switching Diodes, manufactured by the


    Original     		PDF CMKD4448 OT-363 100mA CMKD4448 R3 marking code MARKING R3 sot363 marking code 385 marking code D3 SOT363 sot-363 MARKING

    marking code pa sot-26

    Abstract: marking pa sot-26
    Text: Central CMXD2004TO Semiconductor Corp. SURFACE MOUNT SUPERmini TRIPLE ISOLATED OPPOSING HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD2004TO consists of three 3 Isolated High Voltage Silicon Switching Diodes arranged


    OCR Scan     		PDF CMXD2004TO OT-26 OT-26 X04TO 14-November marking code pa sot-26 marking pa sot-26

    R1 marking

    Abstract: No abstract text available
    Text: Central" CMKD6001 Semiconductor Corp. SURFACE MOUNT ULTRAmini TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD6001 type contains three 3 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar


    OCR Scan     		PDF CMKD6001 CPD91) OT-363 OT-363 R1 marking

    Untitled

    Abstract: No abstract text available
    Text: Central“ CMXD2004TO Semiconductor Corp. SURFACE MOUNT SUPERmini TRIPLE ISOLATED OPPOSING HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD2004TO consists of three 3 Isolated High Voltage Silicon Switching Diodes arranged


    OCR Scan     		PDF CMXD2004TO OT-26 OT-26 X04TO 14-November

    marking D3 SOT26

    Abstract: LR1 DIODE MARKING CODE
    Text: Central“ CMXD6001 Semiconductor Corp. SURFACE MOUNT SUPERmini TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD6001 type contains three 3 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar


    OCR Scan     		PDF CMXD6001 OT-26 CPD91) CMXD6001 OT-26 marking D3 SOT26 LR1 DIODE MARKING CODE

    marking code pa sot-26

    Abstract: No abstract text available
    Text: Central CMXD6001 Semiconductor Corp. SURFACE MOUNT SUPERmini” TRIPLE ISOLATED LOW LEAKAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD6001 type contains three 3 Isolated Silicon Switching Diodes, manufactured by the epitaxial planar


    OCR Scan     		PDF CMXD6001 OT-26 14-November OT-26 marking code pa sot-26

    marking D3 SOT26

    Abstract: No abstract text available
    Text: Central" CMXSH-3 Semiconductor Corp. SURFACE MOUNT SUPERmini TRIPLE ISOLATED SILICON SCHOTTKY DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXSH-3 type contains three 3 Isolated Schottky Silicon Switching Diodes, manufactured by the epitaxial planar


    OCR Scan     		PDF OT-26 CPD48 OT-26 marking D3 SOT26

    Untitled

    Abstract: No abstract text available
    Text: Central" CMXD2004 Semiconductor Corp. SURFACE MOUNT SUPERmini TRIPLE ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD2004 type contains three 3 Isolated High Voltage Silicon Switching Diodes, manufactured by the epitaxial


    OCR Scan     		PDF CMXD2004 OT-26 CPD80 OT-26

    marking D3 SOT26

    Abstract: SOT-26 Marking f1 SOT26
    Text: Central" CMXD4448 Semiconductor Corp. SURFACE MOUNT SUPERmini TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD4448 type contains three 3 Isolated High Speed Silicon Switching Diodes, manufactured by the epitaxial planar


    OCR Scan     		PDF CMXD4448 OT-26 CPD63 OT-26 marking D3 SOT26 SOT-26 Marking f1 SOT26

    diode x04

    Abstract: No abstract text available
    Text: Central" CMXD2004 Semiconductor Corp. SURFACE MOUNT SUPERmini TRIPLE ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR C M XD2004 type contains three 3 Isolated High Voltage Silicon Switching Diodes, manufactured by the epitaxial


    OCR Scan     		PDF CMXD2004 XD2004 14-November OT-26 OT-26 diode x04

    DIODE BY

    Abstract: TI251
    Text: G S150TA 25120 G S 150TC 25120 G S 150TI25120 Gallium Arsenide Schottky Rectifier I dc Isolated Surface Mount Package Type Part Number GS150 TI25120 Triple Independent 2 » } 250 GS150 TC25120 Triple Common cathode 250 250 GS150 TA25120 Triple Common anode


    OCR Scan     		PDF GS150TA25120 GS150TI25120 GS150TC25120 GS150 TI25120 TC25120 TA25120 DIODE BY TI251