Untitled
Abstract: No abstract text available
Text: CLC5633 CLC5633 Triple, High Output, Programmable Gain Buffer Literature Number: SNOS910B CLC5633 Triple, High Output, Programmable Gain Buffer General Description The CLC5633 is a triple, low cost, high speed 130MHz buffer which features user programmable gains of +2, +1,
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CLC5633
CLC5633
SNOS910B
130MHz)
130mA/ch)
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utc4124
Abstract: NPN Transistor 1.5A 400V NPN Transistor 1A 400V
Text: UTC 4124 NPN TRIPLE DIFFUSED SILICON TRANSISTOR HIGH FREQUENCY SWITCHING TRANSISTORS FOR BALLASTERS DESCRIPTION UTC 4124 is designed for specially used for electronic ballasters in 110VAC environment. FEATURES * Triple diffused technology. * High switching speed
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110VAC
O-126
4124L
QW-R204-019
utc4124
NPN Transistor 1.5A 400V
NPN Transistor 1A 400V
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2SC4478
Abstract: EN2977
Text: Ordering number : EN 2977 Ordering number:EN2977 NPN Triple Diffused Planar Silicon Transistor 2SC4478 NPN Triple Diffused Planar Silicon Transistor High-Definition CRT Display High-Definition CRT Display Horizontal Deflection Output Applications Horizontal Deflection Output
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EN2977
2SC4478
2SC4478]
O-220ML
2SC4478
EN2977
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SC4466 Preliminary NPN EPITAXIAL SILICON TRANSISTOR SILICON NPN TRIPLE DIFFUSED PLANAR TRANSISTOR DESCRIPTION The UTC 2SC4466 is a silicon NPN triple diffused planar transistor, it uses UTC’s advanced technology to provide the
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2SC4466
2SC4466
2SC4466L-x-T3P-T
2SC4466G-x-T3P-T
QW-R214-019
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FJE5304D
Abstract: No abstract text available
Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application
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FJE5304D
FJE5304D
O-126
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transistor 12v 1A NPN
Abstract: fje5
Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application
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FJE5304D
FJE5304D
O-126
transistor 12v 1A NPN
fje5
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j5304d
Abstract: j5304 transistor j5304d FJE5304DTU NPN transistor Electronic ballast NPN J5304D to-126 npn switching transistor 400v free transistor and ic equivalent data o
Text: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application
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FJE5304D
FJE5304D
O-126
FJE5304DTU
j5304d
j5304
transistor j5304d
NPN transistor Electronic ballast
NPN J5304D
to-126 npn switching transistor 400v
free transistor and ic equivalent data o
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Switching Regulators
Abstract: EN1013C
Text: Ordering number : EN1013C NPN Triple Diffused Planar Silicon Transistor 2SC3090 For Switching Regulators
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EN1013C
2SC3090
Switching Regulators
EN1013C
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2SA223
Abstract: 2SA201 2SA265
Text: -C o LIST OF DISCONTINUED TRANSISTORS Note: In this list n o distinction is m ade between PN Pand NPN. IX EMEt Epitaxial mesa type S: Silicon TME: Triple diffused mesa type G: Germanium AL: Alloy ju n ctio n type TD: Triple diffused type TDP: Triple diffused planar
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2SD1166
Abstract: darlington NPN 600V 8a
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD1166 HIGH POWER SWITCHING APPLICATION. AC & MOTOR CONTROL APPLICATION. INVERTER APPLICATION. FEATURES: . High Voltage : VcE SUS >900V . Triple Diffused Design . Darlington Design MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
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2SD1166
S300//S,
1000kg
AR51A
2SD1166
darlington NPN 600V 8a
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S2877
Abstract: S2877A
Text: S2877A SILICON NPN TRIPLE DIFFUSED MESA TYPE TENTATIVE DATA INDUSTRIAL APPLICATION _ Unit in mm HIGH POWER SWITCHING APPLICATION. DC-AC POWER INVERTER APPLICATION. MOTOR CONTROL APPLICATION. . High Voltage : V c e SUS > 450V . Triple Diffused Design.
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S2877A
Rat54
S2877
S2877A
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2N3440
Abstract: j350 TRANSISTOR 2N3439 transistor 2N 3440 J350 transistor 3440 2N 3440 3439 1010J
Text: 2N3439 2N3440 NPN SILICON TRANSISTORS TRIPLE DIFFUSED MESA. TRANSISTORS SILICIUM, NPN MESA TRIPLE •DIFFUSES. - High voltage, high frequency response transistor Transistor haute tension à fréquence d'amplification élevée - High voltage, low current, switching applications
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2n3439
2N3440
j350 TRANSISTOR
2N3439
transistor 2N 3440
J350
transistor 3440
2N 3440
3439
1010J
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ST100Q22
Abstract: ST100Q
Text: ST100Q22 SILICON NPN TRIPLE DIFFUSED MESA TYPE TENTATIVE DATA INDUSTRIAL APPLICATION Unit in mm HIGH POWER SWITCHING. DC-AC POWER INVERTER. MOTOR CONTROL APPLICATION. FEATURES : . High Voltage : VCEX SUS >1200V . Triple Diffused Design . Darlington Design
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ST100Q22
2-60B1A
500kg
ST100Q22
ST100Q
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BUX45
Abstract: transistor et 460
Text: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection
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CB-19
BUX45
transistor et 460
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ST800F21
Abstract: ST800F
Text: ST800F21 SILICON NPN TRIPLE DIFFUSED MESA TYPE TENTATIVE DATA HIGH POWER SWITCHING APPLICATION. DC MOTOR CONTROL APPLICATION. ELECTRIC CAR APPLICATION. INDUSTRIAL APPLICATIONS Unit in mm 2 - 0 5 .2 ± O .2 FEATURES: . High Voltage : VcEX SUS > 300V . Triple Diffused Design
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ST800F21
ST800F21
ST800F
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2SD1165
Abstract: No abstract text available
Text: 2SD1165A SILICON NPN TRIPLE DIFFUSED MESA TYPE INDUSTRIAL APPLICATIONS Unit in ran HIGH POWER SWITCHING APPLICATION. DC-AC POWER INVERTER APPLICATION. 2 -0 4 - 0 ± 0.2 MOTOR CONTROL APPLICATION. FEATURES : . High Voltage : V c e SUS > 900v . Triple Diffused Design
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2SD1165A
500kg
2SD1165
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2SD647
Abstract: No abstract text available
Text: SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD647A INDUSTRIAL APPLICATIONS HIGH POWER SWITCHING APPLICATIONS. DC-AC POWER INVERTER APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm 2-0i.O±O.2 FEATURES: . High Voltage : V c e SUS ^450V . Triple Diffused Design.
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2SD647A
2SD647A
2SD697A
2SD697A
2SD647
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transistor BUX
Abstract: BUX14 TR07
Text: *B U X 14 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN, TRIPLE DIFFUSE % Preferred device D is p o s itif recom m andé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension Thermal fatigue inspection
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BUX14
CB-19
transistor BUX
BUX14
TR07
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TCA 785
Abstract: transistor BUX 48 vu bux BUX41 sonde de temperature
Text: *BUX 41N NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE îfc Preferred device D isp o sitif recom m andé High speed, high current, high power transistor Transistor de puissance rapide, fo r t courant Thermal fatigue inspection
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CB-19
TCA 785
transistor BUX 48
vu bux
BUX41
sonde de temperature
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st400l21
Abstract: No abstract text available
Text: ST400L21 SILICON NPN TRIPLE DIFFUSED MESA TYPE TENTATIVE DATA HIGH POWER SWITCHING. INDUSTRIAL APPLICATION Unit in mm DC-AC POWER INVERTER. MOTOR CONTROL APPLICATION. 8 - 04.0 ± 0 8 . High Voltage : VCEO SUS =800V . Triple Diffused Design MAXIMUM RATINGS (Ta=25°C)
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ST400L21
st400l21
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2SD648A
Abstract: 2SD648
Text: 2SD648A SILICON NPN TRIPLE DIFFUSED MESA TYPE INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. 2 “ J2!5.2±Û.2 DC MOTOR CONTROL APPLICATIONS. ELECTRIC CAR APPLICATIONS. FEATURES t . High Voltage : VC E O SUS =300V . Triple Diffused Design.
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2SD648A
S-300/te,
1000kg
2SD648A
2SD648
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2N3584
Abstract: 2n4240 2n 6021 SCHEMA 2N3583 3584 TCA 321 2n3585 3583
Text: 2N 3584 ,* 2 N 358b 5^2I\I 3585 ^ 2 N 4240 NPN SILICON TRANSISTORS, TRIPLE DIFFUSED MESA * TRANSISTORS NPN SILICIUM, MESA TRIPLE DIFFUSES ^Preferred device Dispositif recommandé - High voltage linear power am plifier Amplification linéaire de puissance forte tension
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CB-72
2N3584
2n4240
2n 6021
SCHEMA
2N3583
3584
TCA 321
2n3585
3583
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97CC
Abstract: transistor ESM 16 transistor ESM 30 ESM18 transistor ESM 18
Text: ESM 18 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE High current fast switching transistor Transistor de commutation rapide fort courant V CEO 100 V Amplification BF ou H F grands signaux •c 25 A Thermal fatigue inspection
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CB-19
97CC
transistor ESM 16
transistor ESM 30
ESM18
transistor ESM 18
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ST300M22
Abstract: No abstract text available
Text: ST300M22 SILICON NPN TRIPLE DIFFUSED MESA TYPE TENTATIVE DATA HIGH POWER SWITCHING. DC-AC POWER INVERTER. MOTOR CONTROL APPLICATION. INDUSTRIAL APPLICATION Unit in mm Z-04.O±Q2 FEATURES: . High Voltage : V c e x SUS >900V . Triple Diffused Design . Darlington Design
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ST300M22
300/is,
1000kg
ST300M22
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