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    Amphenol Times Microwave Systems TRC-1250-FR

    STANDARD CABLE, FLAME RETARDENT
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    Amphenol Times Microwave Systems TRC-1250-PE

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    Amphenol Times Microwave Systems TRC-1250-VW1

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    Thomas Research Products TRC-120S490ST

    LED DRIVER CC AC/DC 14-24V 4.9A
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    Thomas Research Products TRC-120S035DT

    LED DRIVER CC AC/DC 20-34V 3.5A
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    TRC12 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TRC1-200E Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    TRC1-20B Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    TRC1-20D Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    TRC-120S035DT Thomas Research Products Power Supplies - External/Internal (Off-Board) - LED Drivers - LED DRIVER CC AC/DC 20-34V 3.5A Original PDF
    TRC-120S490ST Thomas Research Products Power Supplies - External/Internal (Off-Board) - LED Drivers - LED DRIVER CC AC/DC 14-24V 4.9A Original PDF
    TRC-1250-FR Amphenol Times Microwave Systems STANDARD CABLE, FLAME RETARDENT Original PDF
    TRC-1250-PE Amphenol Times Microwave Systems POLYETHYLENE JACKETED VERSION Original PDF
    TRC-1250-VW1 Amphenol Times Microwave Systems GENERAL PURPOSE, FLAME RETARDENT Original PDF

    TRC12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4A14H

    Abstract: SRN8
    Text: User Manual V850E2/ML4 32 User’s Manual: Hardware 32-bit Single-Chip Microcontroller V850E2/Mx4 microcontrollers PD70F4021 μ PD70F4022 All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


    Original     		PDF V850E2/ML4 32-bit V850E2/Mx4 PD70F4021 PD70F4022 R01UH0262EJ0200, R01UH0262EJ0200 4A14H SRN8

    PD70F35

    Abstract: R01US0001EJ v850E2M architecture Users Manual SUS 303 EZ CG 555 timer guard ring TT 2188 v850e2m NAS11 TAPA2 B32R
    Text: User Manual V850E2/MN4 32 RENESAS MCU V850E2/Mx4 microcontrollers PD70F3510 μPD70F3512 μPD70F3514 μPD70F3515 All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


    Original     		PDF V850E2/MN4 V850E2/Mx4 PD70F3510 PD70F3512 PD70F3514 PD70F3515 R01UH0011EJ0100, R01UH0011EJ0100 PD70F35 R01US0001EJ v850E2M architecture Users Manual SUS 303 EZ CG 555 timer guard ring TT 2188 v850e2m NAS11 TAPA2 B32R

    HD64572

    Abstract: ADE-602-127A HD64572AFL33 intel 80386 block diagram 1S2074H TRB20 receiver eft 317 transistor TRB20 CDA 10.7 MC 40 Hitachi DSA00211
    Text: HD64572 SCA-II User’s Manual ADE-602-127A Rev. 2.0 October 19, 1998 Hitachi, Ltd. MC-Setsu Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in


    Original     		PDF HD64572 ADE-602-127A HD64572 FP-176) ADE-602-127A HD64572AFL33 intel 80386 block diagram 1S2074H TRB20 receiver eft 317 transistor TRB20 CDA 10.7 MC 40 Hitachi DSA00211

    V850E2M 32-bit Microcontroller Core Architecture

    Abstract: v850E2M architecture Users Manual uPD70F35
    Text: User Manual V850E2/MN4 User’s Manual: Hardware 32 RENESAS MCU V850E2/Mx4 microcontrollers PD70F3510 μPD70F3512 μPD70F3514 μPD70F3515 All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


    Original     		PDF V850E2/MN4 V850E2/Mx4 PD70F3510 PD70F3512 PD70F3514 PD70F3515 R01UH0011EJ0300, R01UH0011EJ0300 V850E2M 32-bit Microcontroller Core Architecture v850E2M architecture Users Manual uPD70F35

    MB87Q3140

    Abstract: MB87Q3141 MB87Q3141RB-GE1 xbee TRC1000 program eeprom 24c32
    Text: Fujitsu Microelectronics America, Inc. 1601 Trapelo Road Suite 273 Waltham, Ma 02451 July 19, 2006 Thuan Nguyen Qualcomm Incorporated 5775 Morehouse Drive San Diego, CA 92121-1714 Dear Thuan: The following information is intended to alleviate some confusion that has resulted regarding


    Original     		PDF MB87Q3140RB-G. MB87Q3141RB-G. Node1006 Node1003 Node1007 MB87Q3140 MB87Q3141 MB87Q3141RB-GE1 xbee TRC1000 program eeprom 24c32

    Hitachi 64180 manual

    Abstract: 64180S HD64570F16 Hitachi DSAUTAZ006
    Text: HD64570 SCA Serial Communications Adaptor User’s Manual ADE-602-035B Rev. 3.0 8/28/1998 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in


    Original     		PDF HD64570 ADE-602-035B Hitachi 64180 manual 64180S HD64570F16 Hitachi DSAUTAZ006

    M 5110

    Abstract: m5110 UM5110
    Text: UD/15110 10 Sec Voice Synthesizer with Serial/Random Trigger Features • a ■ ■ Operating Voltage Range: 2.4V - 5.2V Power supply mode selectable by PWD 10 second voice duration 12 voice sections with serial or random trigger functions ■ The STA/STB can option for stop pulse, busy, or LED


    OCR Scan     		PDF UD/15110 24-pin DescriptionTRG10 TRG11 TRG12 UM5110 UM5110H M 5110 m5110

    le 9148

    Abstract: ma 8601
    Text: UM51 WSeries 10 Sec. Ifoice Synthesizer with Serial/Random Trigger Features • Operating Voltage Range: 2.4V - 5.2V ■ Power supply m ode selectable b y PWD ■ 10-second voice duration ■ 1 2 voice sections with serial or random trigger functions ■ The STA /S TB can option tor stop pulse, busy, or LED


    OCR Scan     		PDF 10-second 24-pin TRC10 TRC12 UM5110 UM5110H 24LDIP le 9148 ma 8601

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HY62256B-I Series _ 32Kx 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY62256B-I is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF HY62256B-I 1DC05-11-MAY94 HY62256BLP-I HY62256BLLP-I HY62256BU-I HY62256BLU-I

    Untitled

    Abstract: No abstract text available
    Text: VENTRONICS MEDICAL SWITCHING POWER SUPPLIES VENTRONICS INC. 345 MONROE AVE BOX.142 KENILWORTH ,NJ Ö7033.PHONE 9I 8)272-S262. FAX(903)272-763fl E-HAIL: VENTRONICS@ PRODIGY.NET WWW.VENTRONICSINC.COM 16W Switching A daptor with USA folding plug And Changt'aMt* different country AC plugs


    OCR Scan     		PDF 272-S262. 272-763fl TRC-18-0550-M TRC-12-1000-M TRC-13 5-0450-M TRC-20-0300-M TRC-20-0500-M TRC-24-0250-M TRC-24-0420-M

    IDT7012S

    Abstract: No abstract text available
    Text: Integrated Device Technology, Inc. HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM PRELIMINARY IDT7012 FEATURES: DESCRIPTION: • High-speed access - Military: 35/45/55/70ns max. - Commercial: 25/35/45/55ns (max.) • Low-power operation - IDT7012S Active: 400mW (typ.)


    OCR Scan     		PDF IDT7012 35/45/55/70ns 25/35/45/55ns IDT7012S 400mW IDT70121Active: MIL-STD-883, T7012

    t600C

    Abstract: ttc 123 t5115 TTC-123 transformer 9-0-9 T4220 T8410 T5415 t3220 9-0-9 transformer
    Text: TELECOMMUNICATIONS TRANSFORMERSFCC PART 68 ~ C M ICROTRAN F ile N o s. 1 3 8 0 2 8 ” N H - F ile N o L R 8 1 3 8 3 142035 International, coupling, hybrid, voice, V.32 & V.34 data applications. HIGH PERFORMANCE HYBRID TELECOMMUNICATIONS TRANSFORMER âf,!ÿ-îSiS»IS9BSSSÎF


    OCR Scan     		PDF T4113 T4220 TTC-10 TTC-168 T2220 T3220 T5115 TH5220 t600C ttc 123 TTC-123 transformer 9-0-9 T8410 T5415 9-0-9 transformer

    dt7130

    Abstract: 1DT7130 7130SA
    Text: CMOS DUAL-PORT RAM 8 K 1 K x 8-BIT IDT7130SA/LA IDT7140SA/LA Integrated Device Technology, Inc. FEATURES DESCRIPTION • H ig h -s p e e d a c c e s s T h e ID T 7 1 3 0 /ID T 7 1 4 0 a re h ig h -s p e e d 1 K x 8 D u a l-P o rt — M ilitary: 2 5 /3 5 /5 5 /1 0 0 n s (m a x .)


    OCR Scan     		PDF IDT7130SA/LA IDT7140SA/LA L48-1 dt7130 1DT7130 7130SA

    M5M418165CJ

    Abstract: m5m418165c m5m418165
    Text: MITSUBISHI LSIs « . M U » » « * PB E M 5 M 4 1 8 1 6 5 C J ,T P - 5 ,; 6 ,; 7 - 5 S .- 6 S . - 7 S HYPER PAGE MODE 16777216-BIT 1048576-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family ol 1048576-word by 16-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal


    OCR Scan     		PDF 16777216-BIT 1048576-WORD 16-BIT) 16-bit M5M418165C M5M418165CJ m5m418165

    Untitled

    Abstract: No abstract text available
    Text: b7E T> m TTbMlME G01S111 S04 SAMSUNG ELECTRONICS INC DRAM MODULES KMM594020B 4M x9 DRAM SIMM Memory Module, Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594020B is a4 M b its x 9 Dynamic RAM high density memory module. The Samsung KMM594020B


    OCR Scan     		PDF G01S111 KMM594020B KMM594020B 20-pin 30-pin 22/iF KMM594020B-6 110ns KMM594020B-7

    TC51440

    Abstract: CI43 TC51 TC514400JL a309
    Text: * This is advanced information and specifications are subject to change without notice. 1 ,0 43 , 57 5 W O R D x 4 BIT D Y N A M I C RA M D E S C RI P T I O N The TC514400JL/ZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as


    OCR Scan     		PDF TC5144OOJL/ZL TC514400JL/ZL TC514400JL/ZLâ TC514400JUZLâ TC51440 CI43 TC51 TC514400JL a309

    BUV 46C

    Abstract: No abstract text available
    Text: g p rx HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT &) PRELIMINARY IDT70121S/L IDT70125S/L In te g ra te d D evi ce Tech n olog y, Inc. FEATURES: DESCRIPTION: • High-speed access - Military: 35/45/55/70ns max.) - Commercial: 25/35/45/55ns (max.)


    OCR Scan     		PDF IDT70121S/L IDT70125S/L 35/45/55/70ns 25/35/45/55ns IDT70121/70125S 400mW IDT70121/70125L IDT70121 IDT70125 BUV 46C

    Untitled

    Abstract: No abstract text available
    Text: 'H YU N D AI HY514370B _Series 256K X 16-blt CMOS DRAM 2 WE & WPB w ith PRELIMINARY DESCRIPTION The HY514370B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		PDF HY514370B 16-blt HY514370B 16-bit 400mil 40pin 40/44pin FEAT120) 0J312I0300)

    V62C256

    Abstract: 12L marking
    Text: r-. e.! ^ VITELIC V r~ j *f V62C256 FAMILY HIGH PERFORMANCE LOW POWER 32K x 8 BIT CMOS STATIC RAM Features Description • High speed • Maxim um access tim e of 100 ns to 150 ns • Equal access and cycle times The V62C256 is a high speed, low power, 3 2 ,768word by 8-bit CMOS static RAM fabricated using


    OCR Scan     		PDF V62C256 768-word V62C256 32LCC 12L marking

    5106b

    Abstract: UM5106 SECI resistor iw16
    Text: UM5106B Seríes 6 Sec. Voice Synthesizer with Serial/Random Trigger Features 1 Power-on trigger 1 Autom atic powerdow n 1 Mask options for: — Trigger mode — S top mode — Re-triggerable feature — Stop pulse and LED flash — Voice data pulse — W ord com binations


    OCR Scan     		PDF UM5106B 24-pin UM5106BH 5106BH 24LDIP 24LDIP UM51068 5106b UM5106 SECI resistor iw16

    514100J

    Abstract: No abstract text available
    Text: 4,194,304 WORD x 1 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514100JL/ZL is the new generation dynamic RAM organized A,194,304 words by 1 bit. The TC514100JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as


    OCR Scan     		PDF TC514100JL/ZL TC514100J/Z. TC5141OOJL/ZL-80 TC5141 OOJL/ZL-10 514100J

    TRB20 receiver

    Abstract: TRB20 TRB18
    Text: Section 5 Multiprotocol Serial Communication Interface MS CI 5.1 Overview The multiprotocol serial communication interface (MSCI) supports four different communication modes: asynchronous, byte synchronous, bit synchronous, and transparent. The two full-duplex MSCI channels built into the SCA-II have identical functions but operate


    OCR Scan     		PDF

    PT 1017

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 256K 64K x 4-BIT ADVANCE INFORMATION IDT71258 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) — Military: 25/35/45/55ns (max.) — Commercial: 20/25/35/45ns (max.) • Low-power operation


    OCR Scan     		PDF IDT71258 25/35/45/55ns 20/25/35/45ns IDT71258S 400mW 400nW IDT712581Active: 350mW 100jiW 24-pin, PT 1017

    M5M418160CJ

    Abstract: M5M418160 m5m418
    Text: MITSUBISHI LSIs oPS>m ,nAt* pBEi M5M418160CJ,TP-5,-6,-7, -5S,-6S,-7S FAST PAGE MODE 16777216-BIT 1048576-WORD BY 16-BIT DYNAMIC RAM DESCRIPTION This is a family of 1048576-word by 16-bit dynamic RAMS, fabricated with the high performance CMOS process, and is ideal


    OCR Scan     		PDF M5M418160CJ 16777216-BIT 1048576-WORD 16-BIT) 16-bit -DQ16 M5M418160 m5m418