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    TRAY TSOP 1220 Search Results

    TRAY TSOP 1220 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    JM38510/12203BGA Renesas Electronics Corporation Amplifiers, CAN, /Tray Visit Renesas Electronics Corporation
    TLV61220DBVT Texas Instruments 0.7V Low Input Voltage Step-Up Converter with 5uA Iq 6-SOT-23 -40 to 85 Visit Texas Instruments Buy
    ADS1220IRVAT Texas Instruments 24-bit, 2-kSPS, 4-ch, low-power, small-size delta-sigma ADC w/ PGA, VREF, 2x IDACs & SPI interface 16-VQFN -40 to 125 Visit Texas Instruments Buy
    TPS51220ARTVR Texas Instruments Fixed-Frequency, 99% Duty Cycle Peak Current-Mode Notebook System Pwr Controller 32-WQFN -40 to 85 Visit Texas Instruments Buy
    ADS1220IPWR Texas Instruments 24-bit, 2-kSPS, 4-ch, low-power, small-size delta-sigma ADC w/ PGA, VREF, 2x IDACs & SPI interface 16-TSSOP -40 to 125 Visit Texas Instruments Buy
    LMK5B12204RGZT Texas Instruments Ultra-low jitter clock generator with network synchronization and BAW technology 48-VQFN -40 to 85 Visit Texas Instruments

    TRAY TSOP 1220 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IPC-J-STD-001

    Abstract: TRAY DAEWON TSOP 6n1 tube IPC-JSTD-001 VHH10-6N1 Intel Corporation esd flash small outline package guide DAEWON tray 48 optical Pick-Up head venturi meter R08-01-FOGO
    Text: Intel-Recommended Manual Handling/Programming Process for Small Outline Packages Version 2.5 CONTENTS Section Title Page 1.0 Scope 2 2.0 Introduction 2 3.0 Applicable Documents 2 4.0 Work Area/Station Setup 2 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 Programming Process Procedures


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    DAEWON tray tsop 48LD

    Abstract: nikon v12B 6n1 tube IPC-J-STD-001 nikon GRAINGER TRAY TSOP 56LD daewon TRAY DAEWON TSOP venturi meter
    Text: Intel-Recommended Manual Handling/Programming Process for Small Outline Packages Version 2.4 CONTENTS Section Title Page 1.0 Scope 2 2.0 Introduction 2 3.0 Applicable Documents 2 4.0 Work Area/Station Setup 2 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 Programming Procedures


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    Untitled

    Abstract: No abstract text available
    Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit process technology Data Sheet DATA SHEET For new designs, S29GL128N supersedes S29GL128M, and S29GL256N supersedes S29GL256M. These are factory-recommended product migrations. Please refer to the S29GLxxxN


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    PDF S29GLxxxM S29GL256M, S29GL128M, S29GL064M, S29GL032M 32Megabit, S29GL128N S29GL256N S29GL256M.

    Untitled

    Abstract: No abstract text available
    Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For


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    PDF S29GL-M S29GL256M, S29GL128M, S29GL064M, S29GL032M S29GL032A, S29GL064A, S29GL128N, S29GL256N S29GL032M,

    29gl064

    Abstract: TSR056 BGA-63 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M TSOP-20 S29GL256M
    Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For new and current designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M,


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    PDF S29GL-M S29GL256M, S29GL128M, S29GL064M, S29GL032M S29GL032A, S29GL064A, S29GL128N, S29GL256N S29GL032M, 29gl064 TSR056 BGA-63 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M TSOP-20 S29GL256M

    S29GL128P

    Abstract: a8800 S29GL032 S29GL256p S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M S29GL256M
    Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 µm MirrorBit Process Technology Data Sheet This product family has been retired and is not recommended for designs. For


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    PDF S29GL-M S29GL256M, S29GL128M, S29GL064M, S29GL032M S29GL032A, S29GL064A, S29GL128P, S29GL256P S29GL032M, S29GL128P a8800 S29GL032 S29GL032A S29GL032M S29GL064A S29GL064M S29GL128M S29GL256M

    29gl064

    Abstract: Operations-S29GL064M 29gl064M 8A000 TSOP-20 FOOTPRINT S29GL032M lead frame pin grid array GL128M jedec mo-142 GL256M
    Text: S29GL-M MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32 Megabit 3.0 Volt-only Page Mode Flash Memory Featuring 0.23 µm MirrorBit Process Technology Data Sheet For new designs, S29GL032A, S29GL064A, S29GL128N, and S29GL256N supersede S29GL032M, S29GL064M, S29GL128M, and S29GL256M,


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    PDF S29GL-M S29GL256M, S29GL128M, S29GL064M, S29GL032M S29GL032A, S29GL064A, S29GL128N, S29GL256N S29GL032M, 29gl064 Operations-S29GL064M 29gl064M 8A000 TSOP-20 FOOTPRINT S29GL032M lead frame pin grid array GL128M jedec mo-142 GL256M

    tsop tray matrix outline

    Abstract: S29GL032M S29GL064M S29GL128M S29GL256M S29GL128* FOOTPRINT
    Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet DATASHEET Distinctive Characteristics


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    PDF S29GLxxxM S29GL256M, S29GL128M, S29GL064M, S29GL032M 32Megabit, 128-word/256-byte 8-word/16-byte tsop tray matrix outline S29GL032M S29GL064M S29GL128M S29GL256M S29GL128* FOOTPRINT

    A222 transistor

    Abstract: GL128M SA136-SA139 S29GL032M S29GL064M S29GL128M S29GL256M S29GL256 jedec mo-142 footprint 29gl064
    Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet DATASHEET Distinctive Characteristics


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    PDF S29GLxxxM S29GL256M, S29GL128M, S29GL064M, S29GL032M 32Megabit, 128-word/256-byte 8-word/16-byte 256Mb A222 transistor GL128M SA136-SA139 S29GL032M S29GL064M S29GL128M S29GL256M S29GL256 jedec mo-142 footprint 29gl064

    S29GL128* FOOTPRINT

    Abstract: MARKING SA70 S29GL032M S29GL064M S29GL128M S29GL256M 29gl064 tsop40 C18000 TS048-48-Pin
    Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet DATASHEET Distinctive Characteristics


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    PDF S29GLxxxM S29GL256M, S29GL128M, S29GL064M, S29GL032M 32Megabit, 128-word/256-byte 8-word/16-byte 256Mb S29GL128* FOOTPRINT MARKING SA70 S29GL032M S29GL064M S29GL128M S29GL256M 29gl064 tsop40 C18000 TS048-48-Pin

    BGA-63

    Abstract: TSOP-20 *GL128M10 S29GL064N application notes S29GL128N TSOP-20 FOOTPRINT S29GL256 S29GL032M90 S29GL128M90TAIR10 transistor marking A21
    Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics


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    PDF S29GLxxxM S29GL256M, S29GL128M, S29GL064M, S29GL032M 32Megabit, 16-word/32-byte 28h/50h 29h/52h. 45h/8Ah BGA-63 TSOP-20 *GL128M10 S29GL064N application notes S29GL128N TSOP-20 FOOTPRINT S29GL256 S29GL032M90 S29GL128M90TAIR10 transistor marking A21

    TSOP TRAY 40 PIN

    Abstract: GL064M90 s29gl02 gl128m90 S29GL256M10FAIR1 GL128m90F ac characteristics reset command S29GL064M S29GL064M S29GL128* FOOTPRINT S29GL128M
    Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet DATASHEET Distinctive Characteristics


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    PDF S29GLxxxM S29GL256M, S29GL128M, S29GL064M, S29GL032M 32Megabit, 40-pin 48-pin 56-pin 64-ball TSOP TRAY 40 PIN GL064M90 s29gl02 gl128m90 S29GL256M10FAIR1 GL128m90F ac characteristics reset command S29GL064M S29GL064M S29GL128* FOOTPRINT S29GL128M

    s29gl032m10tair

    Abstract: s29gl02 S29GL256
    Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics


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    PDF S29GLxxxM S29GL256M, S29GL128M, S29GL064M, S29GL032M 32Megabit, 128-word/256-byte 8-word/16-byte s29gl032m10tair s29gl02 S29GL256

    s29gl032m10tair

    Abstract: No abstract text available
    Text: S29GLxxxM MirrorBitTM Flash Family S29GL256M, S29GL128M, S29GL064M, S29GL032M 256 Megabit, 128 Megabit, 64 Megabit, and 32Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 0.23 um MirrorBit process technology Datasheet PRELIMINARY Distinctive Characteristics


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    PDF S29GLxxxM S29GL256M, S29GL128M, S29GL064M, S29GL032M 32Megabit, 128-word/256-byte 8-word/16-byte BGA-80P-M02 s29gl032m10tair

    K9F1208U0C-PCB

    Abstract: No abstract text available
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208U0C-FIB00 \AVNET\09082007\SAMS\K9F1208U0C-PCB0000 07-Sep-2007 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 K9F1208U0C-PCB

    SAMSUNG NAND Flash Qualification Report

    Abstract: K9F1208U0CJIB0 marking date code samsung semiconductor
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208U0C-FIB00 \AVNET\09082007\SAMS\K9F1208U0C-PIB0T00 07-Sep-2007 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 SAMSUNG NAND Flash Qualification Report K9F1208U0CJIB0 marking date code samsung semiconductor

    K9F1208U0C-PCB0

    Abstract: marking date code samsung semiconductor K9F1208U0C K9F1208U0CPCB0 K9F1208U0C-JIB0 K9F1208U0CJIB0 K9F1208U0C-PIB K9F1208U0CPIB0 K9F1208U0CJIB0T K9F1208U0C-JIB0T
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C o824KB K9F1208U0C-FIB00 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 K9F1208U0C-PCB0T K9F1208U0C-PCB0 marking date code samsung semiconductor K9F1208U0CPCB0 K9F1208U0C-JIB0 K9F1208U0CJIB0 K9F1208U0C-PIB K9F1208U0CPIB0 K9F1208U0CJIB0T

    SAMSUNG NAND Flash Qualification Report

    Abstract: No abstract text available
    Text: K9F1208U0C K9F1208R0C K9F1208B0C FLASH MEMORY K9F1208X0C INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF K9F1208U0C K9F1208R0C K9F1208B0C K9F1208X0C K9F1208U0C-FIB00 \AVNET\09082007\SAMS\K9F1208U0C-PIB0000 07-Sep-2007 K9F1208U0C-JIB00 K9F1208U0C-JIB0T K9F1208U0C-PCB00 SAMSUNG NAND Flash Qualification Report

    SAMSUNG moviNAND

    Abstract: marking date code samsung semiconductor NAND FLASH QDP movinand DECODER SLC nand hamming code 512 bytes 48 TSOP1 1220F samsung 128G nand flash NAND Flash Code Information date code marking samsung Nand K9F2808U0C-PCB0
    Text: FLASH MEMORY K9F2808U0C Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 15th 2002 Advance 1.0 TBGA PKG Dimension Change 48-Ball, 6.0mm x 8.5mm -> 63-Ball, 9.0mm x 11.0mm Sep. 5th 2002


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    PDF K9F2808U0C 48-Ball, 63-Ball, K9F28XXQ0C K9F2808U0C-FCB0 K9F2808Q0C-HCB0 K9F2816U0C-HCB0 K9F2816U0C-PCB0 K9F2816Q0C-HCB0 K9F2808U0C-HCB0 SAMSUNG moviNAND marking date code samsung semiconductor NAND FLASH QDP movinand DECODER SLC nand hamming code 512 bytes 48 TSOP1 1220F samsung 128G nand flash NAND Flash Code Information date code marking samsung Nand K9F2808U0C-PCB0

    K9F2G08R0A

    Abstract: No abstract text available
    Text: K9F2G08R0A K9F2G08U0A FLASH MEMORY K9F2G08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF K9F2G08R0A K9F2G08U0A K9F2G08UXA /apps/Eudora/Attach/272-55085-0000 SG200602672 K9F2G08R0A

    A 27631

    Abstract: 27631 s29gl512 S29GLxxxN 1128 marking GL256N S29GL128N S29GL256N S29GL512N Spansion S29GL256N
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


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    PDF S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 27631A4 A 27631 27631 s29gl512 1128 marking GL256N S29GL128N S29GL256N S29GL512N Spansion S29GL256N

    tsop 48 PIN tray

    Abstract: No abstract text available
    Text: LH53FV8500E 8M Mask ROM Model No.: LH5G85XX Spec No.: ELI02111 Issue Date: August 6, 1998 SHARP LH53FV8500E •Handle this document carefully for it contains aaterial protected by international copyright law. Any reproduction, full or in part, of this aaterial is prohibited


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    PDF LH53FV8500E LH5G85XX) ELI02111 200X1 TSOP48-P-122Ö AA1142 CV756 tsop 48 PIN tray

    LH28F800BVHE-BTL90

    Abstract: LHF80V13
    Text: Product Specification 4Ê2*1* K J i JNL * 5 & l lA m r C r ^ . Integrated Circuits Group LH28F800BVHE-BTL90 Flash Memory 8M 1M x8/512K x 16 (Model No.: LHF80V13) Spec No.: EL109049A Issue Date: December 1, 1998 • filûtmû DG3EG11 70S H SHARP LHF80V13


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    PDF 28F800BVH E-BTL90 x8/512K LHF80V13) EL109049A D032D11 LHF80V13 LH28F800BVHE-BTL90 LHF80V13

    Untitled

    Abstract: No abstract text available
    Text: SHARP SHARP LHF80G05 # H a n d le this docum ent carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written perm ission o f the company. # W h e n using the products covered herein, please observe the conditions written herein


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    PDF LHF80G05 TSOP48-- AA1142 LH28F800SGHEL70