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    TRANSISTORS ZB Search Results

    TRANSISTORS ZB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS ZB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


    Original     		PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    fmmt4123

    Abstract: ZB smd marking
    Text: Transistors IC SMD Type Switching Transistors FMMT4123 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Switching transistors. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


    Original     		PDF FMMT4123 OT-23 100MHz 140KHz 15KHz fmmt4123 ZB smd marking

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Power Bipolar Transistors General TRANSISTOR RATINGS VCEmax Voltage ratings IC = x mA COLLECTOR TO BASE VCBmax The maximum permissible instantaneous voltage between collector and base terminals. The collector voltage is negative with respect to base in pnp transistors and


    Original     		PDF MBE249

    TPV 3100

    Abstract: TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission
    Text: Order this document by AN1034/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1034 THREE BALUN DESIGNS FOR PUSH-PULL AMPLIFIERS Single RF power transistors seldom satisfy today’s design criteria; several devices in separate packages1, or in the same package balanced, push-pull or dual transistors , must


    Original     		PDF AN1034/D AN1034 TPV 3100 TPM-4100 application note transistor TPV 3100 trw rf disadvantages of Magic tee trw rf semiconductors TPV-3100 TPV3100 108AN zf transmission

    Untitled

    Abstract: No abstract text available
    Text: QS6J3 Transistors Small switching −20V, −1.5A QS6J3 zExternal dimensions (Unit : mm) TSMT6 2.8 1.6 (6) (4) (3) (5) 2.9 (2) 0.4 (1) 1pin mark 0.85 0.16 zFeatures 1) Two Pch MOSFET transistors in a single TSMT6 package. 2) Pch Treueh MOSFET have a low on-state resistance


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: QS6J3 Transistors Small switching −20V, −1.5A QS6J3 zExternal dimensions (Unit : mm) TSMT6 2.8 1.6 (6) (4) (3) (5) 2.9 (2) 0.4 (1) 1pin mark 0.85 0.16 zFeatures 1) Two Pch MOSFET transistors in a single TSMT6 package. 2) Pch Treueh MOSFET have a low on-state resistance


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Product specification FMMT4123 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Switching transistors. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter


    Original     		PDF FMMT4123 OT-23 100MHz 140KHz 15KHz

    Untitled

    Abstract: No abstract text available
    Text: ZBF579 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)25 I(C) Max. (A)30m Absolute Max. Power Diss. (W) Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)10


    Original     		PDF ZBF579

    RSL020P03

    Abstract: P-channel power mosfet 30V
    Text: RSL020P03 Transistors 4V Drive Pch MOSFET RSL020P03 zStructure Silicon P-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) High speed switching. zApplications Switching Abbreviated symbol : SL zPackaging specifications


    Original     		PDF RSL020P03 RSL020P03 P-channel power mosfet 30V

    Untitled

    Abstract: No abstract text available
    Text: RSL020P03 Transistors 4V Drive Pch MOSFET RSL020P03 zStructure Silicon P-channel MOSFET zDimensions Unit : mm TUMT6 0.2Max. zFeatures 1) Low On-resistance. 2) High speed switching. zApplications Switching Abbreviated symbol : SL zPackaging specifications


    Original     		PDF RSL020P03

    Transistor BSX 63-10

    Abstract: Transistor BSX 62-16 BSX62 Q60218-X62-B BSX63 Q60218-X62-C Q60218-X62-D Q60218-X63-B Q60218-X63-C
    Text: BSX 62, BSX 63 NPN transistors for AF output stages and switching applications B S X 62 and B S X 63 are epitaxial silicon NPN planar transistors in a case 5 C 3 DIN 41873 TO -39 . The collector is electrically connected to the case. The transistors are particularly suitable for A F output stages and as a medium-power switch.


    OCR Scan     		PDF Q60218-X62-B Q60218-X62-C Q60218-X62-D Q60218-X63-B Q60218-X63-C at7rase-25Â BSX62BSX63 Transistor BSX 63-10 Transistor BSX 62-16 BSX62 BSX63 Q60218-X63-C

    Untitled

    Abstract: No abstract text available
    Text: BDV91 BDV93 BDV95 _ J ^ILIP S I N T E R N A T I O N A L 5bE ]> • 7 1 1 Q û 2 b 0 0 4 3 4 0 b 23b M P H I N T - 3 3 - / 3 SILICON EPITAXIAL BASE POWER TRANSISTORS N-P-N epitaxial base power transistors in the plastic SOT-93 envelope. These transistors are intended


    OCR Scan     		PDF BDV91 BDV93 BDV95 OT-93 BDV92, BDV94 BDV96.

    BC5508

    Abstract: 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw
    Text: Selection Guide Page Small Signal Transistors 42 Small Signal MOSFETs 43 Junction FETs 44 Power Transistors 49 Switching Diodes 50 Schottky Diodes 51 Low Leakage Diodes 52 Stabistor Diodes 52 Zener Diodes 53 Transient Voltage Suppressors TVS 57 Current Limiting Diodes


    OCR Scan     		PDF OT-23 350mW CMPTB099 CMPT2222A trK1000V) CMPS5064 OT-23 OT-89 CQ89D CQ89M BC5508 6CW66 BC5588 BC8488 TRANSISTOR bc5508 1GW NPN 8C546 smd transistor marking 1gw 1gw transistor SMD Transistors 1gw

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    TIS69 equivalent

    Abstract: 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26
    Text: IN T R O D U C T IO N This booklet is designed to simplify your selection of field effect transistors, which best meet your requirement. It is a comprehensive pocket size reference to your widest choice of field effect transistors. This broad selection is your best assurance of pin-pomting the


    OCR Scan     		PDF 2N5045, 2N5046, 2N5047 TIS69 equivalent 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26

    transistor BD 677

    Abstract: BD 675 BD675 677d
    Text: ES C T> m ÔEBSbOS 00043^5 b H S I E 6 NPN Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF Î5C °*395 T-33-29 ~ BD 675 BD 677 D BD 679 Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington


    OCR Scan     		PDF T-33-29 BD679 a23SbOS 00043RS BD675, transistor BD 677 BD 675 BD675 677d

    Untitled

    Abstract: No abstract text available
    Text: • bbS3^31 00353^1 DSD H A P X N AUER PHILIPS/DISCRETE BSR30 to 33 L7E D J V SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in miniature plastic envelopes intended for application in thick and thin-film circuits. They are intended for use in telephony and general industrial applications.


    OCR Scan     		PDF BSR30 BSR30 BSR33

    ZBF579

    Abstract: No abstract text available
    Text: ZBF569 ZBF579 SOT23 PNP SILICON PLANAR R.F. TRANSISTORS FEATURES. * HIGH fr UP TO 2.4GHz. * LOW NOISE <3.3dB AT 500MHz PARTMARKING DETAILS ZBF569 - F69 ZBF579 - F79 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZBF569 ZBF579 UNIT Collector-Base Voltage VcBO 35


    OCR Scan     		PDF ZBF569 ZBF579 500MHz ZBF579

    BO677

    Abstract: transistor BD 677 bo679 B0677 BD677 thermal d242 BD 677 BC 677 Q62702-D240 Q62702-D242
    Text: ESC D • 023SbOS 0004315 b ■ S I E G NPN Silicon Darlington Transistors SIEMENS A K T I E N G E SE LL SC H AF Î5 C T-33-29 °*3 9 5 ~ BO 675 BD 677 BD 679 D Epibase power darlington transistors 40 W BD 675, BD 677, and BD 679 are monolithic NPN silicon epibase power darlington


    OCR Scan     		PDF 023SbOS T-33-29 BD676, BD677 a23Sb0S ooo43Ra BD675 AKTIENGESELLSCHAF-BD679 BD67S, BO677 transistor BD 677 bo679 B0677 BD677 thermal d242 BD 677 BC 677 Q62702-D240 Q62702-D242

    n6532

    Abstract: No abstract text available
    Text: 3Ö750Ö1 DQ17HS3 0 | } .u arn n g io n P o w e r Transistors File Number 873 2N6530, 2N6531, 2N6532, 2N6533 8-Ampere N-P-N Darlington Power Transistors 80, 100, 120 Volts, 60 Watts Gain of 1000 at 5 A 2N 6530, 2N 6532 Gain of 1000 at 3 A (2N 6533) Gain of 500 at 3 A (2 N 6 5 3 1 )


    OCR Scan     		PDF DQ17HS3 2N6530, 2N6531, 2N6532, 2N6533 -220AB RCA-2N6530, P60I9 n6532