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    TRANSISTORS T1P50 Search Results

    TRANSISTORS T1P50 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS T1P50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T1P50

    Abstract: transistors t1p50
    Text: PHILIPS INTERNATIONAL 45E D CI 711Qö2ti DQ31SMS h E3PHIN 11 TIP47; TIP48 J I TIP49; TIP50 r-33-// — SILICON DIFFUSED POWER TRANSISTORS Medium-voltage, high-speed, glass-passivated NPN power transistors in T 0-220 envelope for amplifier and switching applications.


    OCR Scan     		PDF DQ31SMS TIP47; TIP48 TIP49; TIP50 r-33-// TIP47 O-220AB, 711062b 00312MÖ T1P50 transistors t1p50

    TIP503

    Abstract: TIP506
    Text: TYPES TIP503 THRU TIP506 N-P-N SILICON POWER TRANSISTORS TYPES TIP503 THRU T IP 506 BULLETIN NO. DL-S 7111598, DECEMBER FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 120 V and 150 V Min V b r C E O 2-A Rated Continuous Collector Current 20 Watts at 100°C Case Temperature


    OCR Scan     		PDF TIP503 TIP506 T1P505

    transistors t1p50

    Abstract: texas instruments tip47 texas instruments tip50 tip50
    Text: TIP47, TIP48, TIP49, TIP50 NPN SILICON POWER TRANSISTORS D E C E M B E R 1971 - R E V IS E D M A Y 1995 • 40 W at 25°C Case Temperature • 1 A Continuous Collector Current TO-220 PACKAGE TOP VIEW 2 A Peak Collector Current N. o 20 mJ Reverse-Energy Rating


    OCR Scan     		PDF TIP47, TIP48, TIP49, TIP50 O-220 TIP47 TIP48 TIP49 transistors t1p50 texas instruments tip47 texas instruments tip50

    BF357

    Abstract: BF195 BF594 BF197 BF194 BF194 equivalent BF597 2N4996 BF195 equivalent BC516 equivalent
    Text: Silect High Frequency Transistors TT MHz Sj o < Maximum Ratings Device Type hFE Case outline B V PTOT Ic VCE in brackets CBO ic V V mA mW min. max. mA V 1 10 BF594 (9) 30 20 30 250 65 220 Case Outlines BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38


    OCR Scan     		PDF BF594 BF594, BF194 BF595 BF195 BF597 BF197 2N4996 O-111 BF357 BF195 BF594 BF197 BF194 BF194 equivalent BF597 2N4996 BF195 equivalent BC516 equivalent