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    TRANSISTORS ON SEMICONDUCTOR Search Results

    TRANSISTORS ON SEMICONDUCTOR Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS ON SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1am surface mount diode

    Abstract: c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f
    Text: ON Semiconductor Bipolar Transistors Bipolar Transistors Continued Plastic-Encapsulated Transistors (Continued) Plastic-Encapsulated Multiple Transistors Plastic-Encapsulated High-Voltage Amplifier Transistors (Case 29-04 Ñ TO-226AA (TO-92) Ñ PNP) hFE @ IC


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    PDF O-226AA O-236AB OT-23) OT-223) MMBTA42LT1 MMBT5551LT1 BSP52T1 1am surface mount diode c845 2GM sot-23 transistor G1 TRANSISTOR SOT 23 PNP 2F PNP SOT23 P1F marking AS3 SOT223 p2f sot-223 c845 TO 92 SOT-223 P1f

    1N5825

    Abstract: 2N6040 2N6045 MJD122 MJD127 TIP120 TIP122 TIP125 TIP127 TIP125-TIP127
    Text: ON Semiconductort NPN MJD122* Complementary Darlington Power Transistors PNP MJD127* DPAK For Surface Mount Applications *ON Semiconductor Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS


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    PDF MJD122* MJD127* 2N6040 2N6045 TIP120 TIP122 TIP125 TIP127 r14525 MJD122/D 1N5825 MJD122 MJD127 TIP125-TIP127

    2N6387-D

    Abstract: 1N5825 2N6387 2N6388 MSD6100
    Text: ON Semiconductor 2N6387 2N6388* Plastic Medium−Power Silicon Transistors *ON Semiconductor Preferred Device . . . designed for general−purpose amplifier and low−speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS


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    PDF 2N6387 2N6388* 2N6388 2N6387, O-220AB 2N6387/D 2N6387-D 1N5825 2N6387 2N6388 MSD6100

    2N6388

    Abstract: 2N6387
    Text: ON Semiconductor 2N6387 2N6388* Plastic Medium−Power Silicon Transistors *ON Semiconductor Preferred Device . . . designed for general−purpose amplifier and low−speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS


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    PDF 2N6387 2N6388* 2N6387 2N6388 2N6387, O-220AB

    1N5825

    Abstract: 2N6040 2N6045 MJD122 MJD127 TIP120 TIP122 TIP125 TIP127
    Text: ON Semiconductort NPN MJD122* Complementary Darlington Power Transistors PNP MJD127* DPAK For Surface Mount Applications *ON Semiconductor Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS


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    PDF MJD122* MJD127* 2N6040 2N6045 TIP120 TIP122 TIP125 TIP127 r14525 MJD122/D 1N5825 MJD122 MJD127

    MJD41C

    Abstract: MJD42C MSD6100 TIP41 TIP42 TIP41 amplifier
    Text: ON Semiconductort NPN Complementary Power Transistors MJD41C * PNP MJD42C * DPAK For Surface Mount Applications *ON Semiconductor Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 6 AMPERES


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    PDF MJD41C MJD42C TIP41 TIP42 r14525 MJD41C/D MJD41C MJD42C MSD6100 TIP41 amplifier

    2N3771

    Abstract: 2N3771 power circuit 2N3772 transistor 2N3771 1N5825 2N6257 MSD6100 2N3771 power transistor Power Transistor 2N3771
    Text: ON Semiconductort 2N3771* 2N3772 High Power NPN Silicon Power Transistors . . . designed for linear amplifiers, series pass regulators, and inductive switching applications. *ON Semiconductor Preferred Device 20 and 30 AMPERE POWER TRANSISTORS NPN SILICON


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    PDF 2N3771* 2N3772 2N3771 2N3771/D 2N3771 2N3771 power circuit 2N3772 transistor 2N3771 1N5825 2N6257 MSD6100 2N3771 power transistor Power Transistor 2N3771

    11V0

    Abstract: No abstract text available
    Text: ON Semiconductort NPN Complementary Power Transistors MJD31C PNP MJD32C DPAK For Surface Mount Applications ON Semiconductor Preferred Devices Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 3 AMPERES


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    PDF MJD31C MJD32C TIP31 TIP32 r14525 MJD31C/D 11V0

    MJD41C

    Abstract: MJD42C MSD6100 TIP41 TIP42 NPN transistor 5 watts
    Text: ON Semiconductort NPN Complementary Power Transistors MJD41C * PNP MJD42C * DPAK For Surface Mount Applications *ON Semiconductor Preferred Device Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTORS 6 AMPERES


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    PDF MJD41C MJD42C TIP41 TIP42 r14525 MJD41C/D MJD41C MJD42C MSD6100 NPN transistor 5 watts

    MJ15003 MJ15004

    Abstract: mj15003 mj15004
    Text: ON Semiconductort NPN Complementary Silicon Power Transistors MJ15003 * PNP MJ15004 * The MJ15003 and MJ15004 are PowerBaset power transistors designed for high power audio, disk head positioners and other linear applications. *ON Semiconductor Preferred Device


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    PDF MJ15003 MJ15004 MJ15003 MJ15004 r14525 MJ15003/D MJ15003 MJ15004

    MJL3281A MJL1302A

    Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors
    Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors


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    PDF MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A MJL3281A-D complementary npn-pnp power transistors

    MJ15023

    Abstract: MJ15025 MJ1502 mj150 MJ-15025 transistor MJ15025
    Text: ON Semiconductort PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *ON Semiconductor Preferred Device 16 AMPERE SILICON


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    PDF MJ15023 MJ15025 MJ15023 MJ15025 r14525 MJ15023/D MJ1502 mj150 MJ-15025 transistor MJ15025

    2N6387-D

    Abstract: 1N5825 2N6387 2N6388 MSD6100
    Text: ON Semiconductort 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *ON Semiconductor Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS 60–80 VOLTS


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    PDF 2N6387 2N6388* 2N6388 2N6387, 220AB r14525 2N6387/D 2N6387-D 1N5825 2N6387 2N6388 MSD6100

    MJ15025

    Abstract: No abstract text available
    Text: ON Semiconductort PNP MJ15023 MJ15025 * Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *ON Semiconductor Preferred Device 16 AMPERE SILICON


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    PDF MJ15023 MJ15025 MJ15025

    mj15022

    Abstract: mj15024 transistor MJ15024
    Text: ON Semiconductort NPN MJ15022 MJ15024 * Silicon Power Transistors The MJ15022 and MJ15024 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. *ON Semiconductor Preferred Device 16 AMPERE SILICON


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    PDF MJ15022 MJ15024 MJ15024 transistor MJ15024

    2N6387

    Abstract: 2N6387-D 1N5825 2N6388 MSD6100
    Text: ON Semiconductor 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *ON Semiconductor Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS 60–80 VOLTS


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    PDF 2N6387 2N6388* 2N6388 2N6387, 220AB r14525 2N6387/D 2N6387 2N6387-D 1N5825 2N6388 MSD6100

    MJL3281A MJL1302A

    Abstract: positioner MJL1302A MJL3281A complementary npn-pnp power transistors
    Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors


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    PDF MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A positioner complementary npn-pnp power transistors

    2N5195

    Abstract: No abstract text available
    Text: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP


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    PDF 2N5191, 2N5192 2N5194 2N5195* 2N5193 2N5195

    transistor 2n222

    Abstract: MJE13002 equivalent mje13003 equivalent 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND MJE13002D MJE13002 MJE13003 1N4933 2N2905 MJE210
    Text: ON Semiconductort MJE13002 * MJE13003 * SWITCHMODEt Series NPN Silicon Power Transistors *ON Semiconductor Preferred Device 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS 40 WATTS These devices are designed for high–voltage, high–speed power


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    PDF MJE13002 MJE13003 r14525 MJE13002/D transistor 2n222 MJE13002 equivalent mje13003 equivalent 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND MJE13002D MJE13002 MJE13003 1N4933 2N2905 MJE210

    BLV 730

    Abstract: COE82101 BLY90 BLW60 BLV25 BLW89 rf transformer philips india SC-10 amplifier Blw89 transistor blv 33 transistor
    Text: TECHNICAL PUBLICATION Considerations on efficiency of the RF power transistors in the different classes of operation COE82101 Philips Semiconductors Considerations on efficiency of the RF power transistors in the different classes of operation CONTENTS 1 SUMMARY


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    PDF COE82101 SCA57 BLV 730 COE82101 BLY90 BLW60 BLV25 BLW89 rf transformer philips india SC-10 amplifier Blw89 transistor blv 33 transistor

    2N5194

    Abstract: 2N5195 2N5191 2N5192 2N5193
    Text: ON Semiconductor 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP


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    PDF 2N5194 2N5195* 2N5191, 2N5192 r14525 2N5194/D 2N5194 2N5195 2N5191 2N5192 2N5193

    2N5191

    Abstract: 2N5192 2N5193 2N5194 2N5195
    Text: ON Semiconductort 2N5194 2N5195* Silicon PNP Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to NPN 2N5191, 2N5192 *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON PNP


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    PDF 2N5194 2N5195* 2N5191, 2N5192 r14525 2N5194/D 2N5191 2N5192 2N5193 2N5194 2N5195

    MJE5190

    Abstract: 2N5191 TO-225AA to225a 2N5190 2N5192 2N5194 2N5195
    Text: ON Semiconductor 2N5191 2N5192 * Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *ON Semiconductor Preferred Device 4 AMPERE POWER TRANSISTORS SILICON NPN


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    PDF 2N5191 2N5192 2N5194, 2N5195. r14525 2N5191/D MJE5190 2N5191 TO-225AA to225a 2N5190 2N5192 2N5194 2N5195

    mjw16010a

    Abstract: PK MUR1100 AM503 MJE210 MTP12N10 MTP8P10 MUR105 P6302
    Text: ON Semiconductort NPN Silicon Power Transistors 1 kV SWITCHMODEt Series MJW16010A* *ON Semiconductor Preferred Device These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are


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    PDF MJW16010A* r14525 MJW16010A/D mjw16010a PK MUR1100 AM503 MJE210 MTP12N10 MTP8P10 MUR105 P6302