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    TRANSISTORS ND C9 Search Results

    TRANSISTORS ND C9 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS ND C9 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MC74HC02D

    Abstract: atop mc34152 application notes motor control MC78L05ACD MOTOROLA brushless dc controller 12 Vdc brush motor driver HALL SOT-23-4 motorola transistor cross reference FET small signal transistors motorola Z6 DIODE
    Text: MOTOROLA Order this document by AN1607/D SEMICONDUCTOR APPLICATION NOTE AN1607 ITC122 Low Voltage Micro to Motor Interface By Bill Lucas and Warren Schultz A MOSFET power stage that is designed to run Brush or Brushless DC motors with input signals from an ASB124


    Original     		PDF AN1607/D AN1607 ITC122 ASB124 MC74HC02D atop mc34152 application notes motor control MC78L05ACD MOTOROLA brushless dc controller 12 Vdc brush motor driver HALL SOT-23-4 motorola transistor cross reference FET small signal transistors motorola Z6 DIODE

    a26544

    Abstract: PCB BOARD DIMENSION BY SMA CONNECT transistor c243 U300 ADS5421 ADS5422 J200 J201 J202 SN74x16244
    Text: ADS5421/22EVM User’s Guide Literature Number: SBAU084 February 2003 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		PDF ADS5421/22EVM SBAU084 21/ADS5422 FB200, FB201 P10437CT SN65LVDS101 SN74ALVCH16244 TSSOP-48 a26544 PCB BOARD DIMENSION BY SMA CONNECT transistor c243 U300 ADS5421 ADS5422 J200 J201 J202 SN74x16244

    diode zener 7.2v

    Abstract: DB-54008L-830
    Text: DB-54008L-830 RF POWER amplifier using 1 x PD54008L N-channel enhancement-mode lateral MOSFETs General Feature • Excellent thermal stability ■ Frequency: 800 - 830MHz ■ Supply voltage: 7.2V ■ Output power: 7W ■ Power gain: 7.9 ± 0.3dB ■ Efficiency: 56% - 59%


    Original     		PDF DB-54008L-830 PD54008L 830MHz DB-54008L-830 diode zener 7.2v

    Untitled

    Abstract: No abstract text available
    Text: DB-54008L-175 RF POWER Amplifier using 1 x PD54008L N-Channel Enhancement-Mode Lateral MOSFETs General feature • Excellent Thermal Stability ■ Frequency: 135 - 175 MHz ■ Supply Voltage: 7.2V ■ Output Power: 8W ■ Power Gain: 16.2 ± 1.7dB ■ Efficiency: 56% - 57%


    Original     		PDF DB-54008L-175 PD54008L DB-54008L-175

    165nH

    Abstract: No abstract text available
    Text: DB-54008L-470 RF POWER amplifier using 1 x PD54008L N-channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 7.2V ■ Output power: 8W ■ Power gain: 12.2 ± 1.6dB ■ Efficiency: 51% - 76%


    Original     		PDF DB-54008L-470 PD54008L 470MHz DB-54008L-470 165nH

    Si3216

    Abstract: No abstract text available
    Text: Si3216 P RO SLIC P R O GRA MM A B LE W IDEBAND SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features   Software-programmable features and parameters: Ringing frequency, amplitude, cadence, and waveshape 2-wire ac impedance and hybrid


    Original     		PDF Si3216 GR-909 Si3216

    1206 package resistor,1k resistor

    Abstract: philips smd 1206 resistor
    Text: DB-55008L-175 RF POWER AMPLIFIER USING 1 x PD55008L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 135 - 175 MHz SUPPLY VOLTAGE


    Original     		PDF DB-55008L-175 PD55008L DB-55008L-175 PD55008L 1206 package resistor,1k resistor philips smd 1206 resistor

    dc-dc stepdown converter 12 to 5v 3a

    Abstract: CM3708 CM3708IS CM3708IT PT16 dynamic ram cmos 16pin Schottky Diode 50V 3A
    Text: CM3708 3A LOW-NOISE PWM STEP-DOWN REGULATOR GENERAL DESCRIPTION FEATURES The CM3708 is a low-noise, pulse-width-modulated PWM , DC-DC step-down converter. It powers logic and transmitters in small wireless systems such as cellular phones, communicating PDAs, and handy-terminals. The device


    Original     		PDF CM3708 CM3708 600KHz dc-dc stepdown converter 12 to 5v 3a CM3708IS CM3708IT PT16 dynamic ram cmos 16pin Schottky Diode 50V 3A

    Untitled

    Abstract: No abstract text available
    Text: DB-55008L-880 RF POWER AMPLIFIER USING 1 x PD55008L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE


    Original     		PDF DB-55008L-880 PD55008L DB-55008L-880 PD55008L

    100B Zener

    Abstract: No abstract text available
    Text: DB-54003L-880 RF POWER AMPLIFIER USING 1 x PD54003L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE


    Original     		PDF DB-54003L-880 PD54003L DB-54003L-880 PD54003L 100B Zener

    transistor c114 diagrams

    Abstract: AFEDRI8201 TRANSISTOR c104 113-1-C-5 axial capacitor TFM-140-32-S c86 sot23 XCV100E6 C103 C104
    Text: AFEDRI8201EVM Evaluation Module User’s Guide August 2005 High-Speed Communications SBAU099B IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		PDF AFEDRI8201EVM SBAU099B 5006K-ND 5007K-ND TPS78633 TPS78618 XC18V01VQ44 XCV100E-6PQ240C DLP-USB245M DAC2902 transistor c114 diagrams AFEDRI8201 TRANSISTOR c104 113-1-C-5 axial capacitor TFM-140-32-S c86 sot23 XCV100E6 C103 C104

    transistor c114 diagrams

    Abstract: transistor c114 TFM-140-32-S-D-LC BNX002 c102 TRANSISTOR c86 sot23 pickering relay Pickering relays TRANSISTOR c104 transistor c114 diagram
    Text: AFE8201EVM Evaluation Module User’s Guide July 2004 High-Speed Communications SBAU099 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		PDF AFE8201EVM SBAU099 5006K-ND 5007K-ND TPS78633 TPS78618 XC18V01VQ44 XCV100E-6PQ240C DLP-USB245M DAC2902 transistor c114 diagrams transistor c114 TFM-140-32-S-D-LC BNX002 c102 TRANSISTOR c86 sot23 pickering relay Pickering relays TRANSISTOR c104 transistor c114 diagram

    PCC2171

    Abstract: No abstract text available
    Text: TPA3005D2EVM 6ĆW Stereo ClassĆD Audio Power Amplifier User’s Guide May 2004 HPL − Audio Power Amplifiers SLOU165 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		PDF TPA3005D2EVM SLOU165 Key/2163Sâ 2512067007Y3 3GEYJ124V P120KGTRâ PPBA25 P8086SCTâ TPA3005D2PHP PCC2171

    capacitor 47pf

    Abstract: SMD Transistor w30
    Text: DB-900-60W 60W / 26V / 869-894 MHz using 1x PD57070S The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ COMMON SOURCE CONFIGURATION ■ POUT = 60W WITH 13 dB GAIN OVER 869 894 MHz ■ 10:1 LOAD VSWR CAPABILITY ■ BeO FREE AMPLIFIER Description


    Original     		PDF DB-900-60W PD57070S DB-900-60W IS-54/-136 IS-95 capacitor 47pf SMD Transistor w30

    Untitled

    Abstract: No abstract text available
    Text: S i 3 2 1 0 / S i 3 2 11 P RO SLIC P ROGRAMMABLE CMOS SLIC/C ODEC W I T H R INGING / B A TT E R Y V OLTA GE G ENERATION Features     100% programmable global solution Performs all BORSCHT functions DC-DC controller provides tracking battery from a 3.3–35V input Si3210


    Original     		PDF Si3210) 90VPK

    grm426x7

    Abstract: No abstract text available
    Text: DB-55003L-512 RF POWER AMPLIFIER using 1x PD55003L-512 The LdmoST FAMILY General Features • EXCELLENT THERMAL STABILITY ■ FREQUENCY: 410 -512 MHz ■ SUPPLY VOLTAGE: 12.5V ■ OUTPUT POWER: > 3W ■ POWER GAIN: 15.8 +/-1.2dB ■ EFFICIENCY: 50% - 57% ■


    Original     		PDF DB-55003L-512 PD55003L-512 DB-55003L-512 grm426x7

    3362P-503-ND

    Abstract: 3362P TPA3003D2 TPA3003D2PFB UMK212F105ZG
    Text: TPA3003D2EVM 3ĆW Stereo ClassĆD Audio Power Amplifier With DC Volume Control User’s Guide March 2003 HPL SLOU159 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		PDF TPA3003D2EVM SLOU159 3362P-503-ND 3362P TPA3003D2 TPA3003D2PFB UMK212F105ZG

    LM317 SOT223

    Abstract: R2512 resistor 9014 SMD Pioneer Reference C73 SMD lm317 1N4148DICT-ND 720K-ND TAS1020A how to reset 24lC04 fb0805
    Text: TAS1020AEVM Evaluation Module for the TAS1020A User’s Guide July 2001 Digital Audio Products SLEU002 IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information


    Original     		PDF TAS1020AEVM TAS1020A SLEU002 TAS1020AEVM 8401K 8401K HNZ440 LM317 SOT223 R2512 resistor 9014 SMD Pioneer Reference C73 SMD lm317 1N4148DICT-ND 720K-ND TAS1020A how to reset 24lC04 fb0805

    PD54003L

    Abstract: No abstract text available
    Text: DB-54003L-175A RF POWER Amplifier using 1 x PD54003L N-Channel Enhancement-Mode Lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 155 - 175MHz ■ Supply voltage: 7.5V ■ Output power: > 3W ■ Power gain 15.1 +/- 0.3 dB ■ Efficiency: 65% - 69%


    Original     		PDF DB-54003L-175A PD54003L 175MHz DB-54003L-175A DB-54003-470 PD54003

    re2 elna

    Abstract: 4315-SMD resistors 7805 5V REGULATOR IC THREE TERMINAL DALE CONNECTORS ASLG40G elna re2 m ND R315 brushless dc motor with regenerative function con PMA-A-R030-1 U104D
    Text: ANALOG ICs 33395 EVALUATION MOTOR BOARD DESIGNER REFERENCE MANUAL MC33395RM Rev. 2 05/2003 ower EMBEDDED MOTION CONTROL Communicate Control Protect DRM33395 Designer Reference Manual 33395 Evaluation Motor Board 33395 Evaluation Motor Board List of Sections


    Original     		PDF MC33395RM DRM33395 DRM33395/D re2 elna 4315-SMD resistors 7805 5V REGULATOR IC THREE TERMINAL DALE CONNECTORS ASLG40G elna re2 m ND R315 brushless dc motor with regenerative function con PMA-A-R030-1 U104D

    MRF5711LT1

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MRF571 MRF5711LT1 NPN Silicon H igh-Frequency Transistors Designed for low noise, wide dynamic range fron t-e nd amplifiers and iow-noise VCO's. Available in a surface-mountable plastic packages. This


    OCR Scan     		PDF MRF5711LT1, MRF571) A/500 MMBR571LT1) MRF5711LT1) MMBR571LT1 MRF571 MRF5711LT1 6-590-65/3B

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistors MRF652 MRF652S D e sig n e d fo r 12.5 V d c U H F la rg e -s ig n a l, a m p lifie r a p p lic a tio n s in in d u s tria l a nd c o m m e rc ia l FM e q u ip m e n t o p e ra tin g to 5 1 2 M H z.


    OCR Scan     		PDF MRF652 MRF652S

    KA 2717

    Abstract: MDC2125
    Text: b B L T E S M G l G l b S T Q7T M M O T b Order this data sheet by MDC2125/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MDC2125 SMALLBLOCK Products M o to ro la P referred D evice High Voltage Level Shifter This monolithic, PNP common base, high voltage transistor array is designed to


    OCR Scan     		PDF MDC2125/D MDC2125 738B-01 738B-02 738B-02 KA 2717 MDC2125

    LB 11911

    Abstract: 1SS99 TA8709 ta8710 C984 Z-636 2N6467 2N6468 T0-213AA TO213AA
    Text: _ QÎ 3875081 G E SOLID STATE dT 01E , • File N um b er |3 ö 7S0 ö 1 17441 D 0017441 1 ~ S '? General-Purpose Power Transistors 388 2N6467, 2N6468 Silicon P-N-P « Medium-Power Transistors


    OCR Scan     		PDF 2N6467, 2N6468 T0-213AA RCA-2N6467 2N6468Aare O-213AA TA8710, TA8709, LB 11911 1SS99 TA8709 ta8710 C984 Z-636 2N6467 2N6468 T0-213AA TO213AA