TRANSISTORS J 13003 Search Results

TRANSISTORS J 13003 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTORS J 13003 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
X 13003 Abstract: 13002 d 13003 x 13003 sa 13002 13003 d F 13003 13003 h electronic ballast 13003 13002 npn Text: A El G CORP 17E D □ D S ^ MS t 000^27 5 • TE 13002 TE 13003 ! m H ï ï j £ K l ï S e le c t r o n ic CrearlelèchnQfogws r - 3 3 - il Silicon NPN Power Transistors Applicatipns: Switching mode power supply, electronic ballast Features: • In multi diffusion technique	OCR Scan	r-33-11 00IHb34 T-33-11 X 13003 13002 d 13003 x 13003 sa 13002 13003 d F 13003 13003 h electronic ballast 13003 13002 npn	PDF
E 13003 TRANSISTOR Abstract: c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR Text: TELEFUNKEN ELECTRONIC 17E D • a^QO'te DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique	OCR Scan	T-33-II 0IN41 I3-75. 15A3DIN E 13003 TRANSISTOR c s 13003 TRANSISTOR W 13003 TRANSISTOR 13002 TRANSISTOR transistor 13002 LM 13003 T 08 13003 transistor transistor LB 13003 C electronic ballast by transistor 13003 13003 TRANSISTOR	PDF
13003 TRANSISTOR equivalent Abstract: transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor Text: MOTOROLA O rder this docum ent by MJE13002/D SEMICONDUCTOR TECHNICAL DATA M JE 13002* M JE 13003* D esigner’s Data Sheet ‘ M otorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS	OCR Scan	MJE13002/D O-225AA 13003 TRANSISTOR equivalent transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor	PDF
HF 13003 Abstract: 13003 electronic ballast 13003 13002 sw 13003 LB 13002 BR 13003 13003 circuit HF 13002 H 13003 Text: TELEFUNKEN ELECTRONIC 17E D • a ^ Q O 't e DDORb'S? : ■ AL GG TE 13002 TE 13003 TIiLllFlliKiKIK] electronic Crtfuv»Technotec«5 T-33-II Silicon NPN Power Transistors Applications: Switching mode power supply, electronic ballast features: • In multi diffusion technique	OCR Scan	T-33-11 HF 13003 13003 electronic ballast 13003 13002 sw 13003 LB 13002 BR 13003 13003 circuit HF 13002 H 13003	PDF
BUV93 Abstract: TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003 Text: TELEFUNKEN ELECTRONIC filC D WM fi^SOCHb ODDSb43 1 • ALG6 POWER CONVERSION TRANSISTORS TELEFUNKEN electronic designs its high voltage power transistors for efficient operation in the full range of switching power supply, and switching amplifier topologies associated	OCR Scan	OOOSb43 -Wt--214- BUV93 TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003	PDF
g 13003 Abstract: LM 13003 Text: SGS-THOMSON ^ □ ^ © i^ © ? ^ iD © S SGS 13002/13003 SGS 13002 T/13003 T HIGH VOLTAGE SWITCHING APPLICATIONS DESCRIPTION The SGS13002, SGS13003 SOT-82 plastic package and the SGS13002T, SGS13003T (TO220 plastic package) are silicon multiepitaxial-mesa	OCR Scan	T/13003 SGS13002, SGS13003 OT-82 SGS13002T, SGS13003T MJE13002 O-126, SGS13002 g 13003 LM 13003	PDF
HDB3 schematic Abstract: VL80C75-PC Text: V L S I TECHNOLOGY INC Ifl VLSI D e \| =1300347 0001S2Q 0 ^ T - l S - i h V i Te c h n o l o g y , in c . VL80C75 T1 INTERFACE FEATURES DESCRIPTION • Supports T1, T1C, and CEPT data rates The VL80C75 is a general purpose PCM Line Interface circuit. It Is designed Ho	OCR Scan	0001S2Q VL80C75 VL80C75 HDB3 schematic VL80C75-PC	PDF
TFK diodes BYW 76 Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35	OCR Scan		PDF
full subtractor circuit using nand gates Abstract: pt6021 PC6D10 PT6041-5 VGT200 PT6011 subtractor using TTL CMOS PT6005 PT6021-5 Text: s I TECHNOLOGY INC IflE =1300347 00032^2 1 • V LSI T e c h n o lo g y , in c. T~ 42-ll-C^ VAAST-INTELLIGENCE VGT200M SERIES GOVERNMENT PRODUCTS DIVISION CONTINUOUS GATE™ TECHNOLOGY Î3-M IC R 0N GATE ARRAY SERIES DESCRIPTION FEATURES Extensive Portable retargetable	OCR Scan	VGT200M full subtractor circuit using nand gates pt6021 PC6D10 PT6041-5 VGT200 PT6011 subtractor using TTL CMOS PT6005 PT6021-5	PDF
MP2143A Abstract: MP2144 XC141 MT63a MP2143 MP2144A MD16 2n2072 2sb235 BL1300 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	NPN110. 1532t MP1532At MP1533t MP1534At MP2143A MP2144 XC141 MT63a MP2143 MP2144A MD16 2n2072 2sb235 BL1300	PDF
D880 voltage regulator Abstract: B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180 Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition Vet: (V) Ic (A) hpe Condition Vce(sat), VeE(sat)(v) Condition (V) (mA) MAX KST56(2G) KST55(2H) 80 0.5	OCR Scan	OT-23 KST06 KST05 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71 BCX71H D880 voltage regulator B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180	PDF
MP2143 Abstract: MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 MP2143 MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235	PDF
RT3062 Abstract: BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 RT3062 BLY98 2SC931 1768-0815 2SC1002 2SC1003 2SC807 2SC830 ta6200 2SC685	PDF
transistor TF78 Abstract: AC178 ASZ16 RT150B 113003 2N2134 2s882 2SA231 GFT26 TRANSISTOR at202 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 transistor TF78 AC178 ASZ16 RT150B 113003 2N2134 2s882 2SA231 GFT26 TRANSISTOR at202	PDF

KL8503 Abstract: CK256 CK258 CK311 CK312 CK313 CK314 2SB26 KM7002 MS7 package Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 KL8503 CK256 CK258 CK311 CK312 CK313 CK314 2SB26 KM7002 MS7 package	PDF
A400M Abstract: ASZ16 2N1841 113005 2n2585 MP1534 2SC23 2SC24 2SC437 2SC438 Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 A400M ASZ16 2N1841 113005 2n2585 MP1534 2SC23 2SC24 2SC437 2SC438	PDF
DTS108 Abstract: 2n2585 DTS103 DTS106 BUY27 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 DTS108 2n2585 DTS103 DTS106 BUY27	PDF
MHT1810 Abstract: 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 MHT1810 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534	PDF
2SC102 transistor Abstract: 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558 Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 2SC102 transistor 2SC102 transistor 2Sc102 1763-0625 micro transistor 1203 2SC519 2SC520 TK30556 TK30557 TK30558	PDF
ZT2015 Abstract: SDT1000 MHT8012 857m A400M Stc1094 1205t B170026 0805T Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 ZT2015 SDT1000 MHT8012 857m A400M Stc1094 1205t B170026 0805T	PDF
AD166 Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT	OCR Scan		PDF
MOTOROLA 13003 Abstract: F 13003 TU F 13003 f13003 F 13005 d 13003 t 3003F 3001F 3005F RS 3005 CL Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW3000 Series The RF Line M icrowave Power Transistors . . . designed prim arily for large-signal output and driver amplifier stages in the 1.5 to 3 GHz frequency range. 5 TO 7 dB 1.5-3 GHz 1 TO 5 WATTS MICROWAVE POWER	OCR Scan	MRW3000 TRW3000 MOTOROLA 13003 F 13003 TU F 13003 f13003 F 13005 d 13003 t 3003F 3001F 3005F RS 3005 CL	PDF
transistor 13003 AD Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)	OCR Scan	OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G transistor 13003 AD ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v	PDF
TRANSISTOR tip122 CHN 949 Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175 Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.	OCR Scan	38v01 TRANSISTOR tip122 CHN 949 E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175	PDF

TRANSISTORS J 13003 Search Results

TRANSISTORS J 13003 Result Highlights (5)

TRANSISTORS J 13003 Datasheets Context Search

X 13003

E 13003 TRANSISTOR

13003 TRANSISTOR equivalent

HF 13003

BUV93

g 13003

HDB3 schematic

TFK diodes BYW 76

full subtractor circuit using nand gates

MP2143A

D880 voltage regulator

MP2143

RT3062

transistor TF78

KL8503

A400M

DTS108

MHT1810

2SC102 transistor

ZT2015

AD166

MOTOROLA 13003

transistor 13003 AD

TRANSISTOR tip122 CHN 949