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    TRANSISTORS CROSSREFERENCE Search Results

    TRANSISTORS CROSSREFERENCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS CROSSREFERENCE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PDTA143

    Abstract: PDTC143TU
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA143T series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open Product specification Supersedes data of 2002 Jan 15 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original     		PDF PDTA143T PDTA143 PDTC143TU

    smd TRANSISTOR code marking 36

    Abstract: PDTA143 PDTC143TU
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143T series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = open Product specification Supersedes data of 2002 Jan 15 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC143T PDTC143TT smd TRANSISTOR code marking 36 PDTA143 PDTC143TU

    TRANSISTOR SMD MARKING CODE UA

    Abstract: 2003 SMD IC marking code 33 SMD ic smd transistor bcp53 MARKING SMD PNP TRANSISTOR R 172 bcp53 SMD transistor MARKING SMD PNP TRANSISTOR medium power transistors SMD IC marking 115 MARKING SMD PNP TRANSISTOR R
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP51; BCP52; BCP53 PNP medium power transistors Product specification Supersedes data of 2001 Oct 10 2003 Feb 06 Philips Semiconductors Product specification PNP medium power transistors BCP51; BCP52; BCP53


    Original     		PDF M3D087 BCP51; BCP52; BCP53 BCP53 OT223 BCP54, BCP55 TRANSISTOR SMD MARKING CODE UA 2003 SMD IC marking code 33 SMD ic smd transistor bcp53 MARKING SMD PNP TRANSISTOR R 172 bcp53 SMD transistor MARKING SMD PNP TRANSISTOR medium power transistors SMD IC marking 115 MARKING SMD PNP TRANSISTOR R

    TRANSISTOR SMD MARKING CODE 3d

    Abstract: MARKING 25 SMD PNP TRANSISTOR Transistor SMD marking code NV smd marking 3d npn TRANSISTOR SMD MARKING CODE 3f smd transistor t4 SMD TRANSISTOR A1 SOT23 TRANSISTOR SMD MARKING CODE A1 smd marking code 3D smd marking rs
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BC856; BC857; BC858 PNP general purpose transistors Product specification Supersedes data of 2002 Feb 04 2003 Apr 09 Philips Semiconductors Product specification PNP general purpose transistors BC856; BC857; BC858


    Original     		PDF M3D088 BC856; BC857; BC858 BC846, BC847 BC848. BC856 BC856A BC856B TRANSISTOR SMD MARKING CODE 3d MARKING 25 SMD PNP TRANSISTOR Transistor SMD marking code NV smd marking 3d npn TRANSISTOR SMD MARKING CODE 3f smd transistor t4 SMD TRANSISTOR A1 SOT23 TRANSISTOR SMD MARKING CODE A1 smd marking code 3D smd marking rs

    NPN medium power transistor in a smd

    Abstract: TRANSISTOR SMD MARKING CODE 9339 TRANSISTOR SMD MARKING CODE R 73 bcp56 Transistor SMD marking code NV bcp55 smd transistors smd code marking LP Philips marking code sot223 BCP56-16
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BCP54; BCP55; BCP56 NPN medium power transistors Product specification Supersedes data of 2001 Oct 10 2003 Feb 06 Philips Semiconductors Product specification NPN medium power transistors BCP54; BCP55; BCP56


    Original     		PDF M3D087 BCP54; BCP55; BCP56 BCP56 OT223 BCP51, BCP52 NPN medium power transistor in a smd TRANSISTOR SMD MARKING CODE 9339 TRANSISTOR SMD MARKING CODE R 73 Transistor SMD marking code NV bcp55 smd transistors smd code marking LP Philips marking code sot223 BCP56-16

    Untitled

    Abstract: No abstract text available
    Text: SGF15N90D General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These


    Original     		PDF SGF15N90D SGF15N90D SGF15N90DTU

    induction heating ic

    Abstract: SGL60N90DG3YD induction heating saturation
    Text: SGL60N90DG3 General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These


    Original     		PDF SGL60N90DG3 O-264 SGL60N90DG3 SGL60N90DG3TU SGL60N90DG3M1TU SGL60N90DG3YDTU O-264 induction heating ic SGL60N90DG3YD induction heating saturation

    Untitled

    Abstract: No abstract text available
    Text: SGR15N40L / SGU15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These


    Original     		PDF SGR15N40L SGU15N40L SGU15N40L SGU15N40LTU O-251 AN-9006: AN-9006

    PDTC144WT

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA144W series PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 22 kΩ Product specification Supersedes data of 1999 May 25 2003 Apr 11 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original     		PDF PDTA144W PDTA144WU PDTC144WT

    PDTA144E

    Abstract: TRANSISTOR SMD MARKING CODE spt marking A1 smt3 PNP transistor TRANSISTOR SMD MARKING CODE 42 Marking Code SMD transistors smd code marking LP marking PP16 code smd TRANSISTOR code marking e1 PDTA144ES PDTA144EE
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA144E series PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ Product specification Supersedes data of 1999 Apr 20 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original     		PDF PDTA144E 01-May-99) TRANSISTOR SMD MARKING CODE spt marking A1 smt3 PNP transistor TRANSISTOR SMD MARKING CODE 42 Marking Code SMD transistors smd code marking LP marking PP16 code smd TRANSISTOR code marking e1 PDTA144ES PDTA144EE

    transistor SMD t4

    Abstract: PDTC143XE marking code E2 p SMD Transistor PDTA143 PDTA143XE PDTA143X
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143X series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ Product specification Supersedes data of 2002 Jan 15 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC143X PDTC143XT PDTC143XE transistor SMD t4 PDTC143XE marking code E2 p SMD Transistor PDTA143 PDTA143XE PDTA143X

    PDTA143XE

    Abstract: PDTC143XE PDTA143X smd code marking LP PDTA143
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA143X series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ Product specification Supersedes data of 2002 Mar 14 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original     		PDF PDTA143X 01-May-99) PDTA143XE PDTC143XE smd code marking LP PDTA143

    marking code E5 SMD ic

    Abstract: smd transistor marking e5 TA114E Marking Code SMD transistors PDTA114E PDTC114ES smd code marking LP marking PP16 code transistor smd e5 TRANSISTOR SMD MARKING CODE spt
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA114E series PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Product specification Supersedes data of 1999 May 21 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original     		PDF PDTA114E 01-May-99) marking code E5 SMD ic smd transistor marking e5 TA114E Marking Code SMD transistors PDTC114ES smd code marking LP marking PP16 code transistor smd e5 TRANSISTOR SMD MARKING CODE spt

    MARKING SMD npn TRANSISTOR R

    Abstract: TRANSISTOR SMD MARKING CODE 056 PDTA123JU PDTC123JU
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC123J series NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ Product specification Supersedes data of 1999 May 27 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC123J resistor-PDTC123JT PDTC123JEF PDTC123JE MARKING SMD npn TRANSISTOR R TRANSISTOR SMD MARKING CODE 056 PDTA123JU PDTC123JU

    TRANSISTOR SMD MARKING CODE DZ

    Abstract: smd code marking LP marking PP16 code PDTA124XE
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC124X series NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ Product specification Supersedes data of 1999 May 18 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC124X PDTC124XEF PDTC124XE TRANSISTOR SMD MARKING CODE DZ smd code marking LP marking PP16 code PDTA124XE

    PDTC123ET

    Abstract: PDTA123ET
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA123E series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Product specification Supersedes data of 1999 May 21 2003 Apr 14 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original     		PDF PDTA123E PDTA123ET PDTC123ET PDTA123ET

    IGBT cross-reference

    Abstract: TO252-DPAK transistors cross reference list
    Text: SGR15N40L / SGU15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These


    Original     		PDF SGR15N40L SGU15N40L SGR15N40LTF O-252 SGR15N40LTM AN-9006: IGBT cross-reference TO252-DPAK transistors cross reference list

    smd transistor marking DP

    Abstract: PDTA143Z TRANSISTOR SMD MARKING CODE X D PDTC143ZU PDTA143
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTA143Z series PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ Product specification Supersedes data of 1999 May 25 2003 Apr 10 Philips Semiconductors Product specification PNP resistor-equipped transistors;


    Original     		PDF PDTA143Z 01-May-99) smd transistor marking DP TRANSISTOR SMD MARKING CODE X D PDTC143ZU PDTA143

    PDTC143EK

    Abstract: PDTC143E
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PDTC143E series NPN resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Product specification Supersedes data of 1999 Apr 15 2003 Apr 10 Philips Semiconductors Product specification NPN resistor-equipped transistors;


    Original     		PDF PDTC143E PDTC143ET PDTC143EU PDTC143EE PDTC143EK

    AN9006

    Abstract: No abstract text available
    Text: IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These


    Original     		PDF SGR20N40L SGU20N40L O-252 SGR20N40LTF SGR20N40LTM AN9006

    IGBT cross-reference

    Abstract: AN9006 IGBT application note IGBT Pspice SGR20N40LTF
    Text: IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These


    Original     		PDF SGR20N40L SGU20N40L SGU20N40L SGU20N40LTU O-251 IGBT cross-reference AN9006 IGBT application note IGBT Pspice SGR20N40LTF

    smd TRANSISTOR H2 MARKING CODE

    Abstract: TRANSISTOR SMD catalog h2 SOT66x TRANSISTOR SMD MARKING CODE H2 marking code H2 free transistor and ic equivalent data PEMH1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PEMH1 NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ Preliminary specification 2001 Oct 22 Philips Semiconductors Preliminary specification NPN resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ


    Original     		PDF M3D744 SC-75/SC-89 OT666 01-May-99) smd TRANSISTOR H2 MARKING CODE TRANSISTOR SMD catalog h2 SOT66x TRANSISTOR SMD MARKING CODE H2 marking code H2 free transistor and ic equivalent data PEMH1

    IPS76SB10

    Abstract: mgs225 TRANSISTOR REPLACEMENT GUIDE IPS76SB40 IPS76SB70 IPS79SB40 IPS79SB10 IPS76SB21 IPS79SB70 ips76
    Text: PREFACE Dear Customer We are pleased to issue Philips Semiconductors’ ‘Small-Signal Transistors and Diodes’ handbook SC10. Features of this new fully-revised handbook: • ONE book for small-signal transistors and diodes SC10 supersedes SC01 and SC04


    Original     		PDF BAS216 BAS221 BAT254 BZX284-C. BZX284-B. BA792 IPS76SB10 mgs225 TRANSISTOR REPLACEMENT GUIDE IPS76SB40 IPS76SB70 IPS79SB40 IPS79SB10 IPS76SB21 IPS79SB70 ips76

    transistor databook

    Abstract: No abstract text available
    Text: GENERAL INFORMATION As a recognised world leader in the field of Power Transistors, SGS-THOMSON is strongly committed to producing state-of-the art Power Bipolar Transistors. These devices have been specifically developed to optimise price/performance ratio for the


    OCR Scan     		PDF T0-220 transistor databook