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    onsemi SGR20N40LTF

    IGBT 400V 45W DPAK
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    DigiKey SGR20N40LTF Reel 2,000
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    Fairchild Semiconductor Corporation SGR20N40LTF

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    Bristol Electronics SGR20N40LTF 10
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    SGR20N40LTF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SGR20N40LTF Fairchild Semiconductor Discrete, IGBT Original PDF

    SGR20N40LTF Datasheets Context Search

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    IGBT cross-reference

    Abstract: AN9006 IGBT application note IGBT Pspice SGR20N40LTF
    Text: IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These


    Original     		PDF SGR20N40L SGU20N40L SGU20N40L SGU20N40LTU O-251 IGBT cross-reference AN9006 IGBT application note IGBT Pspice SGR20N40LTF

    IRFR9020tm

    Abstract: IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM
    Text: Date Created: 3/9/2004 Date Issued: 3/24/2004 PCN # 20041003 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 78M06CDTXM MC78M12CDTX MC78M15CDTXM MJD122TF MJD210TF MJD29TF MJD30TF MJD31TF MJD32CTM MJD350TF IRFR9020tm IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM

    AN9006

    Abstract: No abstract text available
    Text: IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These


    Original     		PDF SGR20N40L SGU20N40L O-252 SGR20N40LTF SGR20N40LTM AN9006