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    TRANSISTORS BC 327 Search Results

    TRANSISTORS BC 327 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTORS BC 327 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C 337-40

    Abstract: c 337 25 337-40 c 33740 transistors BC 293 327-40 337 marking code BC 337 BC337 NPN 337
    Text: PNP Silicon AF Transistors BC 327 BC 328 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 337, BC 338 NPN ● 2 3 Type Marking Ordering Code BC 327 BC 327-16 BC 327-25 BC 327-40 BC 328


    Original     		PDF Q62702-C311 Q62702-C311-V3 Q62702-C311-V4 Q62702-C311-V2 Q62702-C312 Q62702-C312-V3 Q62702-C312-V4 Q62702-C312-V2 Collector-ba20 C 337-40 c 337 25 337-40 c 33740 transistors BC 293 327-40 337 marking code BC 337 BC337 NPN 337

    c 337 25

    Abstract: 337 marking code bc337 c 33740 337-40 338 marking code bc 337 equivalent bc 170 c npn bc 337 NPN 337
    Text: NPN Silicon AF Transistors BC 337 BC 338 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 327, BC 328 PNP ● 2 1 Type Marking Ordering Code BC 337 BC 337-16 BC 337-25 BC 337-40 BC 338


    Original     		PDF Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1 Q62702-C314-V2 Q62702-C314-V3 c 337 25 337 marking code bc337 c 33740 337-40 338 marking code bc 337 equivalent bc 170 c npn bc 337 NPN 337

    transistors BC 327

    Abstract: BC328 327-40 C311 IC 32725 npn bc 337 BC327 BC 32740 C312 BC327-40
    Text: PNP Silicon AF Transistors BC 327 BC 328 High current gain ● High collector current ● Low collector-emitter saturation voltage ● Complementary types: BC 337, BC 338 NPN ● 2 3 Type Marking Ordering Code BC 327 BC 327-16 BC 327-25 BC 327-40 BC 328


    Original     		PDF Q62702-C311 Q62702-C311-V3 Q62702-C311-V4 Q62702-C311-V2 Q62702-C312 Q62702-C312-V3 Q62702-C312-V4 Q62702-C312-V2 transistors BC 327 BC328 327-40 C311 IC 32725 npn bc 337 BC327 BC 32740 C312 BC327-40

    equivalent transistor 8550

    Abstract: 2sa1015 equivalent 8550 pnp transistor Bc 8550 9015 transistor transistor BC 557 TRANSISTOR BC 327 PNP 8550 9015 pnp transistor 9015
    Text: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table PNP Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SA853 HN / BC 559 / 9015 2SA978 HN / BC 560 / 9015 2SA1318 HN / BC 556 / 9015 2SA854 HN / BC 327 / 8550


    Original     		PDF To-92 2SA853 2SA978 2SA1318 2SA854 2SA987 2SA1323 2SA855 2SA989 2SA1334 equivalent transistor 8550 2sa1015 equivalent 8550 pnp transistor Bc 8550 9015 transistor transistor BC 557 TRANSISTOR BC 327 PNP 8550 9015 pnp transistor 9015

    bc 558 equivalent

    Abstract: pnp transistor 9015 transistor BC 557 equivalent transistor 8550 BC 9015 transistor 2SA733 equivalent 2SA561 equivalent 2SA733 transistor equivalent transistor bc 558 2SA562 equivalent
    Text: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table PNP Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SA467 HN / BC 327 / 8550 2SA578 HN / BC 560 / 9015 2SA721 HN / BC 559 / 9015 2SA494 HN / BC 559 / 9015


    Original     		PDF To-92 2SA467 2SA578 2SA721 2SA494 2SA579 2SA723 2SA495 2SA608 2SA724 bc 558 equivalent pnp transistor 9015 transistor BC 557 equivalent transistor 8550 BC 9015 transistor 2SA733 equivalent 2SA561 equivalent 2SA733 transistor equivalent transistor bc 558 2SA562 equivalent

    CBC327

    Abstract: C 32725 C 327-25 transistors bc 337 cbc328 BC 327 10D3 BC327-40 BC328-40 c 327 pnp
    Text: BC 327 / BC 328 PNP General Purpose Transistors Si-Epitaxial PlanarTransistors PNP Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0


    Original     		PDF UL94V-0 BC327-40 BC328-40 CBC327 C 32725 C 327-25 transistors bc 337 cbc328 BC 327 10D3 BC327-40 BC328-40 c 327 pnp

    C 337-25

    Abstract: C 33725 12 v transistors 337 c 337 25 npn bc 337 CBC337 transistors bc 337 OF IC 337 NPN 337 BC-338
    Text: BC 337 / BC 338 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0


    Original     		PDF UL94V-0 BC337-40 BC338-40 C 337-25 C 33725 12 v transistors 337 c 337 25 npn bc 337 CBC337 transistors bc 337 OF IC 337 NPN 337 BC-338

    cbc327

    Abstract: No abstract text available
    Text: BC 327 / BC 328 PNP Silicon Epitaxial PlanarTransistors PNP Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert


    Original     		PDF UL94V-0 tter\Transistoren\bc327 cbc327

    Untitled

    Abstract: No abstract text available
    Text: BC 327 / BC 328 PNP Silicon Epitaxial PlanarTransistors PNP Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert


    Original     		PDF UL94V-0 125/C

    Transistor 337

    Abstract: transistor bc 337 transistor bc 630 c 337 25 transistor 338 BC 337 transistor BC 338 transistors bc 337 NPN 337 337 npn transistor
    Text: *B C 337 BC 338 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLA N A R E P IT A X IA U X Compì, of BC 327, BC 328 % Preferred device D isp o sitif recommandé The 8C 337 and BC 338 transistors are intended fo r a wide variety o f medium power AF am plifier


    OCR Scan     		PDF

    transistors BC 487

    Abstract: 327A-16 C 337-40 transistors BC 337a c 33740 tr bc 337 C 337-25 BC 327/25 transistor transistor BC 321 C 32725
    Text: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B


    OCR Scan     		PDF CB-76 BC317P. transistors BC 487 327A-16 C 337-40 transistors BC 337a c 33740 tr bc 337 C 337-25 BC 327/25 transistor transistor BC 321 C 32725

    BC 546 BP

    Abstract: bc 547 bp transistors BC 548 BC 558 PNP 337A1 3001 pnp BC 557 npn tr bc 337 transistors BC 487 transistors BC 548 BC 558 33740
    Text: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B


    OCR Scan     		PDF CB-76 BC317P. BC 546 BP bc 547 bp transistors BC 548 BC 558 PNP 337A1 3001 pnp BC 557 npn tr bc 337 transistors BC 487 transistors BC 548 BC 558 33740

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS PNP Silicon AF Transistors • • • • BC 327 BC 328 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 337, BC 338 NPN Type Marking Ordering Code Q62702-C311 Q62702-C311-V3 Q62702-C311-V4


    OCR Scan     		PDF Q62702-C311 Q62702-C311-V3 Q62702-C311-V4 Q62702-C311-V2 Q62702-C312 Q62702-C312-V3 Q62702-C312-V4 Q62702-C312-V2 A235b05 E35b05

    c33725

    Abstract: c33740 Bc337
    Text: SIEMENS NPN Silicon AF Transistors BC 337 BC 338 • High current gain • High collector current • Low collector-emitter saturation voltage • Complementary types: BC 327, BC 328 PNP Type Marking Ordering Code Q62702-C313 Q62702-C313-V3 Q62702-C313-V1


    OCR Scan     		PDF Q62702-C313 Q62702-C313-V3 Q62702-C313-V1 Q62702-C313-V2 Q62702-C314 Q62702-C314-V1 Q62702-C314-V2 Q62702-C314-V3 BC337 A235b05 c33725 c33740 Bc337

    Untitled

    Abstract: No abstract text available
    Text: BC 327 • BC 328 PNP SILICON AP MEDIUM POWER TRANSISTORS 1 CASE TO-92F THE BC327, BC328 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC327, BC328 ARE COM­ PLEMENTARY TO THE NPN TYPE BC337, BC338


    OCR Scan     		PDF O-92F BC327, BC328 BC337, BC338 BC327 BC328 6251BW

    BC327

    Abstract: BC328 BC337 BC338 BOX69477 BCJ28 NPN bc338
    Text: BC 327 • BC 328 J PNP SILICON AF MEDIUM POWER TRANSISTORS i CASI TO-92F THE BC327, BC328 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC327, BC328 ARE COM­ PLEMENTARY TO THE NPN TYPE BC337, BC338


    OCR Scan     		PDF BC327, BCJ28 BC328 BC337Â BC338 O-92F BC327 625mW BC337 BOX69477 NPN bc338

    bc 327 complementary pair

    Abstract: BC327 BC328 BC337 BC338
    Text: BC 327 • BC 328 PNP SILICON AF MEDIUM POWER TRANSISTORS 1 CASE TO-92F THE BC327, BC328 ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STA G E S , AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC327, BC328 ARE COM­ PLEMENTARY TO THE NPN TYPE BC337, BC338


    OCR Scan     		PDF BC327, BC328 BC337, BC338 O-92F BC327 625mW bc 327 complementary pair BC337

    BC183A

    Abstract: BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B
    Text: general purpose transistors — plastic case tra n s is to rs usage général — b oîtier plastique THOMSON-CSF NPN Characteristics at 25°C Maximum ratings Type PNP Ptot / lc h21E VcEO C22b VCE sat / <C/»B FB Case 1KHz * min BC 174 BC 174 A BC 174 B


    OCR Scan     		PDF CB-76 BC317P. BC183A BC 238 BP BC174 bc 307 bp TR BC 238 C 337-40 BC318 bc 337-16 transistors BC 183 BC 237 B

    BC327

    Abstract: cbc328 BC328 BC 327 bc 327 complementary pair c 337 25 BC3280 pF83
    Text: BC 327 • BC 328 Silii’ium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: Treiber und Endstufen A p p lic a tio n s : Driver and p o w e r stages Besondere Merkmale: Features: • Verlustleistung 625 mW • Power dissipation 625 m W


    OCR Scan     		PDF

    c 337 25

    Abstract: NPN 337 bc 170 c BC 337 bc 170 BC338 bc337 bc 338 npn bc 337 AF200
    Text: BC 337 * BC 338 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: T reiber und Endstufen Applications: D river and p o w e r stages Features: Besondere Merkmale: • Verlustleistung 625 mW • In G ruppen so rtie rt


    OCR Scan     		PDF

    C327a

    Abstract: C337A
    Text: BC327 BC327A BC328 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in plastic TO -92 package, p rim a rily intended fo r use in d rive r and o u tp u t stages o f audio am plifiers. The BC327, BC 327A, BC328 are com plem entary to the BC337, B C 337A and BC338 respectively.


    OCR Scan     		PDF BC327 BC327A BC328 BC327, BC328 BC337, BC338 BC327; C327a C337A

    BCY59C

    Abstract: bcy59 ty 90-BC
    Text: BCY58 BCY59 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in T O -18 m etal package w ith the co lle c to r connected to the case, fo r use in a m p li­ fie r and sw itching applications. Q U IC K R E F E R E N C E D A T A BCY58 BC Y 59 v CEO max.


    OCR Scan     		PDF BCY58 BCY59 BCY59C bcy59 ty 90-BC

    BCW66

    Abstract: BCW65 BCW65A BCW67 BCW68 bcw66fr
    Text: BCW65 BCW66 SOT23 NPN SILICON PLANAR M EDIUM POWER TRANSISTORS IS S U E 3 - A U G U S T 1995 P A R T M A R K IN G D E T A IL S B C W 6 5 A - EA _ B C W 6 5 A R - 4V B C W 65BR - 5V B C W 6 5 B - EB B C W 6 5 C - EC B C W 6 6 F - EF BC W 65CR - 6V B C W 6 6 G - EG


    OCR Scan     		PDF BCW65 BCW66 -BCW65A- BCW65B- BCW65C- BCW66F- BCW66G- BCW66H- -BCW65 BCW67 BCW65A BCW68 bcw66fr

    transistor bc 102

    Abstract: TRANSISTOR BC 327 BC327 transistor bc 103 transistor BC 328 bc 103 transistor BC337 BC338 BC 170 transistor BC 2001 transistor
    Text: HN / BC 327/328 PNP Silicon Expitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-drlver stages and low-power output stages. These types are also available subdivided into three groups -16, -25 and -40, according to their DC current gain. As


    OCR Scan     		PDF BC337 BC338 103mA 20MHz transistor bc 102 TRANSISTOR BC 327 BC327 transistor bc 103 transistor BC 328 bc 103 transistor BC 170 transistor BC 2001 transistor