Untitled
Abstract: No abstract text available
Text: Jsii.su«_/ ^zmi-tonauctoi iJ-'ioau.cti, One. cx 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 SD1541-01 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS DESIGNED FOR HIGH POWER PULSED IFF AND DME APPLICATIONS 400 (min.) DME 1025 - 1150 MHz
|
Original
|
PDF
|
SD1541-01
SD1541-1
SD1541-01
493/IK
395/m03
|
Untitled
Abstract: No abstract text available
Text: TLVD4200 www.vishay.com Vishay Semiconductors DH Backlighting LED in Ø 3 mm Tinted Non-Diffused Package FEATURES • High brightness • Wide viewing angle • Categorized for luminous flux • Available in DH red • Tinted clear package 19231 • Low power dissipation
|
Original
|
PDF
|
TLVD4200
TLVD4200
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: TLHK4400L www.vishay.com Vishay Semiconductors High Intensity LED in Ø 3 mm Tinted Diffused Package FEATURES • AlInGaP technology • Standard Ø 3 mm T-1 package • Small mechanical tolerances • Suitable for DC and high peak current • Wide viewing angle
|
Original
|
PDF
|
TLHK4400L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: TLHK4400L www.vishay.com Vishay Semiconductors High Intensity LED in Ø 3 mm Tinted Diffused Package FEATURES • AlInGaP technology • Standard Ø 3 mm T-1 package • Small mechanical tolerances • Suitable for DC and high peak current • Wide viewing angle
|
Original
|
PDF
|
TLHK4400L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: TLHK4400L www.vishay.com Vishay Semiconductors High Intensity LED in Ø 3 mm Tinted Diffused Package FEATURES • AlInGaP technology • Standard Ø 3 mm T-1 package • Small mechanical tolerances • Suitable for DC and high peak current • Wide viewing angle
|
Original
|
PDF
|
TLHK4400L
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
BSS 250
Abstract: marking BSs sot23 marking BSs sot23 siemens Q62702-S501 Q62702-S503 Q62702-S555 Q62702-S605
Text: NPN Silicon Switching Transistors BSS 79 BSS 81 High DC current gain ● Low collector-emitter saturation voltage ● Complementary types: BSS 80, BSS 82 PNP ● 2 3 1 Type Marking Ordering Code (tape and reel) Pin Configuration 1 2 3 Package1) BSS 79 B
|
Original
|
PDF
|
Q62702-S503
Q62702-S501
Q62702-S555
Q62702-S605
OT-23
BSS 250
marking BSs sot23
marking BSs sot23 siemens
Q62702-S501
Q62702-S503
Q62702-S555
Q62702-S605
|
Untitled
Abstract: No abstract text available
Text: TLHE510., TLHG510., TLHK510. www.vishay.com Vishay Semiconductors High Intensity LED, Ø 5 mm Untinted Non-Diffused Package FEATURES • Untinted non-diffused lens • Choice of three colors • TLH.5100 for cost effective design • Medium viewing angle • Material categorization:
|
Original
|
PDF
|
TLHE510.
TLHG510.
TLHK510.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: TLHE510., TLHG510., TLHK510. www.vishay.com Vishay Semiconductors High Intensity LED, Ø 5 mm Untinted Non-Diffused Package FEATURES • Untinted non-diffused lens • Choice of three colors • TLH.5100 for cost effective design • Medium viewing angle • Material categorization:
|
Original
|
PDF
|
TLHE510.
TLHG510.
TLHK510.
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
M38257E8FP
Abstract: 100D0
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
PDF
|
elimi46
M38257E8FP
100D0
|
M38257E8FP
Abstract: M38258MCDXXXFP 32638 m38254
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
|
Original
|
PDF
|
elimi46
M38257E8FP
M38258MCDXXXFP
32638
m38254
|
Untitled
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
PDF
|
elimi46
|
M38257E8FP
Abstract: display 2 digits
Text: MITSUBISHI MICROCOMPUTERS 3825 Group SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER DESCRIPTION The 3825 group is the 8-bit microcomputer based on the 740 family core technology. The 3825 group has the LCD drive control circuit, an 8-channel AD converter, and a Serial I/O as additional functions.
|
Original
|
PDF
|
elimi46
M38257E8FP
display 2 digits
|
CD4539
Abstract: CD4529BCN CD4529BC CD4529BM truth table of 4539
Text: CD4529BM/CD4529BC WA National JS t Semiconductor CD4529BM/CD4529BC Dual 4-Channel or Single 8-Channel Analog Data Selector General Description Features The CD4529B is a dual 4-channel or a single 8-channel analog data selector, Implemented with complementary
|
OCR Scan
|
PDF
|
CD4529BM/CD4529BC
CD4529BM/CD4529BC
CD4529B
177Vrms
20Log10^
CD4539
CD4529BCN
CD4529BC
CD4529BM
truth table of 4539
|
IOR 450 M
Abstract: c468 c467 c463 TRANSISTORS 640 JS
Text: International S Rectifier P D - 9.1137 IRGPH20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10 js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to
|
OCR Scan
|
PDF
|
10kHz)
IRGPH20M
sho50
C-467
O-247AC
C-468
IOR 450 M
c468
c467
c463
TRANSISTORS 640 JS
|
|
|
TRANSISTORS 640 JS
Abstract: LC-1 2SD1616A
Text: Transistors 2SD1616A USHA INDIA LTD AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Collector-Base Voltage VcBO Collector-Emitter Voltage VcEO Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse)
|
OCR Scan
|
PDF
|
2SD1616A
100mA
100mA
TRANSISTORS 640 JS
LC-1
2SD1616A
|
CD4539
Abstract: CD4539B CD4529BC MC14529 CD4529B MC14529B cd4539bc CD4529BM CD4529 640N
Text: CD4529BM/CD4529BC NATIONAL SEtlICOND - C L O G I O IDE D | b S O l l E E OObSTTt. E | 553 National ÜSfl Semiconductor •7 ^ 5 7 v / CD4529BM/CD4529BC Dual 4-Channel or Single 8-Channel Analog Data Selector Features General Description 3.0V to 15V ■ Wide supply voltage range
|
OCR Scan
|
PDF
|
00b5im
CD4529BM/CD4529BC
CD4529B
10cic
CD4539
CD4539B
CD4529BC
MC14529
MC14529B
cd4539bc
CD4529BM
CD4529
640N
|
CD4529BC
Abstract: CD4539B
Text: CD4529BM/CD4529BC NATIONAL SEtlICOND - C L O G I O IDE D | b S O l l E E OObSTTt. E | 553 National ÜSfl Semiconductor •7 ^ 5 7 v / CD4529BM/CD4529BC Dual 4-Channel or Single 8-Channel Analog Data Selector Features General Description 3.0V to 15V ■ Wide supply voltage range
|
OCR Scan
|
PDF
|
CD4529BM/CD4529BC
CD4529BM/CD4529BC
CD4529B
CD4529BC
CD4539B
|
transistors, thyristors 712
Abstract: CA3240
Text: HARRIS SEMICOND SECTOR ì H a r r • 43G2271 00ML340 Ô73 H H A S i s C SEMICONDUCTOR A J f U 3 2 mm 4 M Dual BiMOS Operational Amplifier with MOSFET Inpu/Bipolar Output 1993 Features Description • Dual Version of CA3140 The CA324QA and CA3240 are dual usrsions of the
|
OCR Scan
|
PDF
|
43G2271
00ML340
CA3140
CA324QA
CA3240
CA3140
004b355
CA3240,
CA3240A
CA3240E
transistors, thyristors 712
|
2SD1616
Abstract: LC1 DC
Text: Transistors 2SD1616 USHA INDIA LTD AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Rating Unit Collector-Base Voltage VcBO 60 V Collector-Emitter Voltage VcEO 50 V V ebo 6 lc 1 Emitter-Base Voltage
|
OCR Scan
|
PDF
|
2SD1616
100mA
100mA
2SD1616
LC1 DC
|
Untitled
Abstract: No abstract text available
Text: Power T r a n s is t o r s - - M JE 1 3 0 0 7 HARRIS SEMICOND File N um ber SECTOR 2?E » B 4302271 D OS DMb b 15.90 6 MHAS T -S 5 - ' 3 H igh-Speed Silicon N-P-N
|
OCR Scan
|
PDF
|
MJE13007
t-33-13
|
9N80
Abstract: STH9N80 9N80FI gs 069
Text: STH9N80 STH9N80FI SGS-THOMSON Z T ê N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE STH9N80 STH9N80FI V dss R d S o ii Id 800 V 800 V 1 12 1 a 9 A 5 .6 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
|
OCR Scan
|
PDF
|
STH9N80
STH9N80FI
O-218
ISOWATT218
STH9N80/FI
9N80
9N80FI
gs 069
|
Untitled
Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DESC H-BRIDGE MOSFET POWER MODULE M .S .K E N N E D Y CO RP. 3004 315 699-9201 8 1 7 0 Thompson Road Cicero, N.Y. 13039 FEATURES: • • • • • Pin Compatible with M P M 3 00 4 P and N Channel MOSFETs for Ease of Drive Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity
|
OCR Scan
|
PDF
|
ISO-9001
51343DD
0G0G472
|
MG75G2YL1A
Abstract: 1-B215
Text: MG75G2YL1A GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current: Gain : hf,E=80 Min. (Ic=7 5A)
|
OCR Scan
|
PDF
|
MG75G2YL1A
MG75G2YL1A
1-B215
|
Untitled
Abstract: No abstract text available
Text: PD -9.1137 International lögRectifier IRGPH20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ms @ 125°C, V qe = 15V • Switching-ioss rating includes all “tail" losses • Optimized for medium operating frequency 1 to
|
OCR Scan
|
PDF
|
IRGPH20M
10kHz)
C-467
S5452
O-247AC
C-468
|
