TRANSISTORS 13003 Search Results

TRANSISTORS 13003 Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTORS 13003 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
D880 voltage regulator Abstract: B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180 Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition Vet: (V) Ic (A) hpe Condition Vce(sat), VeE(sat)(v) Condition (V) (mA) MAX KST56(2G) KST55(2H) 80 0.5	OCR Scan	OT-23 KST06 KST05 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71 BCX71H D880 voltage regulator B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180	PDF
transistor 13003 AD Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)	OCR Scan	OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G transistor 13003 AD ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v	PDF
transistor f6 13003 Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350 Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.	OCR Scan	SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350	PDF
ST-13002 Abstract: 13002l 13003l ST-13002l 13003 st13002 ST13003L transistor 13003l 13002 ST-13002* characteristics Text: ST 13002L / ST 13003L NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	13002L 13003L O-92L ST13002L ST13003L Ran3003L ST-13002 13003l ST-13002l 13003 st13002 ST13003L transistor 13003l 13002 ST-13002* characteristics	PDF
13002l Abstract: 13003l ST-13002 ST13002 038g transistor 13003l 13003 st13003l Text: ST 13002L / ST 13003L NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	13002L 13003L O-92L ST13002L ST13003L Range03L 13003l ST-13002 ST13002 038g transistor 13003l 13003 st13003l	PDF
13003 TRANSISTOR equivalent Abstract: transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor Text: MOTOROLA O rder this docum ent by MJE13002/D SEMICONDUCTOR TECHNICAL DATA M JE 13002* M JE 13003* D esigner’s Data Sheet ‘ M otorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors 1.5 AMPERE NPN SILICON POWER TRANSISTORS 300 AND 400 VOLTS	OCR Scan	MJE13002/D O-225AA 13003 TRANSISTOR equivalent transistor sw 13003 transistor Eb 13003 A JE 13003 transistor eb 13003 j e 13003 MOTOROLA transistor MJE13002MJE13003 S JE 13003 13002 and 13003 power transistor TR 13003 transistor	PDF
BUV93 Abstract: TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003 Text: TELEFUNKEN ELECTRONIC filC D WM fi^SOCHb ODDSb43 1 • ALG6 POWER CONVERSION TRANSISTORS TELEFUNKEN electronic designs its high voltage power transistors for efficient operation in the full range of switching power supply, and switching amplifier topologies associated	OCR Scan	OOOSb43 -Wt--214- BUV93 TU F 13003 BUV95 to-220 weight X 13003 13002 TO-92 13003 TO-92 13007 TE13002 13003	PDF
13002 Abstract: 13003 13003 TRANSISTOR transistor 13002 13002 TRANSISTOR transistor 13003 transistor 13003 A c s 13003 TRANSISTOR 13002 and 13003 power transistor SD13003 Text: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	SD13002 SD13003 O-92L 100mA 13002 13003 13003 TRANSISTOR transistor 13002 13002 TRANSISTOR transistor 13003 transistor 13003 A c s 13003 TRANSISTOR 13002 and 13003 power transistor SD13003	PDF
13002 TRANSISTOR Abstract: transistor 13002 13003 TRANSISTOR 13002 13003 transistor 13003 13002 and 13003 power transistor c s 13003 TRANSISTOR BR 13003 W 13003 TRANSISTOR Text: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	SD13002 SD13003 O-92L 100mA 13002 TRANSISTOR transistor 13002 13003 TRANSISTOR 13002 13003 transistor 13003 13002 and 13003 power transistor c s 13003 TRANSISTOR BR 13003 W 13003 TRANSISTOR	PDF
transistor 13002 Abstract: 13003 TRANSISTOR 13003 13002 TRANSISTOR 13002 transistor 13003 13002 and 13003 power transistor BR 13003 sd13003 W 13003 TRANSISTOR Text: SD13002 / SD13003 NPN Silicon Epitaxial Planar Transistor for power switching and electron rectifier applications. These transistors are subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.	Original	SD13002 SD13003 O-92L 100mA transistor 13002 13003 TRANSISTOR 13003 13002 TRANSISTOR 13002 transistor 13003 13002 and 13003 power transistor BR 13003 sd13003 W 13003 TRANSISTOR	PDF
MP2143 Abstract: MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 MP2143 MP2145 2n463 MP2143A MT63 2N1029 2n2585 ASZ16 MP1534 transistor 2SB235	PDF
AD166 Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT	OCR Scan		PDF
transistor TF78 Abstract: AC178 ASZ16 RT150B 113003 2N2134 2s882 2SA231 GFT26 TRANSISTOR at202 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 transistor TF78 AC178 ASZ16 RT150B 113003 2N2134 2s882 2SA231 GFT26 TRANSISTOR at202	PDF
MP2143A Abstract: MP2144 XC141 MT63a MP2143 MP2144A MD16 2n2072 2sb235 BL1300 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I	OCR Scan	NPN110. 1532t MP1532At MP1533t MP1534At MP2143A MP2144 XC141 MT63a MP2143 MP2144A MD16 2n2072 2sb235 BL1300	PDF

ZT2015 Abstract: SDT1000 MHT8012 857m A400M Stc1094 1205t B170026 0805T Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 ZT2015 SDT1000 MHT8012 857m A400M Stc1094 1205t B170026 0805T	PDF
MHT1810 Abstract: 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 MHT1810 2n1821 113003 2N463 MHT2008 2n2585 A580-1202 A580-1603 ASZ16 MP1534	PDF
KL8503 Abstract: CK256 CK258 CK311 CK312 CK313 CK314 2SB26 KM7002 MS7 package Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 KL8503 CK256 CK258 CK311 CK312 CK313 CK314 2SB26 KM7002 MS7 package	PDF
TI3028 Abstract: TI3027 TI-3028 2S52 NKT501 MP1560A ti3029 ti3030 TRANSISTOR b1181 MP1535A Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 TI3028 TI3027 TI-3028 2S52 NKT501 MP1560A ti3029 ti3030 TRANSISTOR b1181 MP1535A	PDF
DTS108 Abstract: 2n2585 DTS103 DTS106 BUY27 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 DTS108 2n2585 DTS103 DTS106 BUY27	PDF
13003d Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS  DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003DE 13003DE 13003DEL-x-T60-K 13003DEG-x-T60-K 13003DEL-x-T92-B 13003DEG-at QW-R223-013 13003d	PDF
13003D Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13003DE Preliminary NPN SILICON TRANSISTOR SILICON TRIPLE DIFFUSION NPN BIPOLAR TRANSISTORS DESCRIPTION The UTC 13003DE is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003DE 13003DE 13003DEL-x-T60-F-K 13003DEG-x-T60-F-K 13003DEL-x-T92-A-B 13003DEG-x-T92-A-B 1300at QW-R223-013 13003D	PDF
B170008 Abstract: 113003 B170002 B170003 B170007 A580-0403 2n2585 B170004 SDT8111 B170005 Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LIN E No. k I B H H TYPE No. AB SO iL O T E M AX. RATIIN G S Ä 2 5 C I I MIN. M A X Pc T 6 T T	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 B170008 113003 B170002 B170003 B170007 A580-0403 2n2585 B170004 SDT8111 B170005	PDF
A400M Abstract: ASZ16 2N1841 113005 2n2585 MP1534 2SC23 2SC24 2SC437 2SC438 Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT	OCR Scan	NPN110. 75OP0 A580-2405 250kSA SFT268 6000n 2N2341 350ktA 75Om0 A400M ASZ16 2N1841 113005 2n2585 MP1534 2SC23 2SC24 2SC437 2SC438	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 13003BS Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003BS is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high	Original	13003BS 13003BS 13003BSL-TM3-T 13003BSL-T60-K 1300at QW-R223-018	PDF

TRANSISTORS 13003 Search Results

TRANSISTORS 13003 Result Highlights (5)

TRANSISTORS 13003 Datasheets Context Search

D880 voltage regulator

transistor 13003 AD

transistor f6 13003

ST-13002

13002l

13003 TRANSISTOR equivalent

BUV93

13002

13002 TRANSISTOR

transistor 13002

MP2143

AD166

transistor TF78

MP2143A

ZT2015

MHT1810

KL8503

TI3028

DTS108

13003d

13003D

B170008

A400M

Untitled