Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR ZS Search Results

    TRANSISTOR ZS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR ZS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RB521S-30

    Abstract: UML12N
    Text: UML12N Transistors General purpose transistor isolated transistor and diode UML12N 2SC4617and RB521S-30 are housed independently in a UMT5 package. 1.3 2.0 0.65 0.65 0.9 2.1 0~0.1 0.1Min. zStructure Silicon epitaxial planar transistor Schottky barrier diode


    Original     		PDF UML12N 2SC4617and RB521S-30 SC-88A UML12N

    MARKING L12

    Abstract: RB521S-30 UML12N
    Text: UML12N Transistors General purpose transistor isolated transistor and diode UML12N 2SC4617and RB521S-30 are housed independently in a UMT5 package. 1.3 2.0 0.65 0.65 0.9 2.1 0~0.1 0.1Min. zStructure Silicon epitaxial planar transistor Schottky barrier diode


    Original     		PDF UML12N 2SC4617and RB521S-30 SC-88A 32MHZ MARKING L12 UML12N

    2SD2674

    Abstract: RB461F US5L10 TUMT5 marking code L10
    Text: US5L10 Transistors General purpose transistor isolated transistor and diode US5L10 A 2SD2674 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) 0.2 (1) 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor


    Original     		PDF US5L10 2SD2674 RB461F 85Max. 15Max. US5L10 TUMT5 marking code L10

    TUMT5

    Abstract: No abstract text available
    Text: US5L10 Transistors General purpose transistor isolated transistor and diode US5L10 A 2SD2674 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) 0.2 (1) 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor


    Original     		PDF US5L10 2SD2674 RB461F 15Max. US5L10 85Max. TUMT5

    Untitled

    Abstract: No abstract text available
    Text: QSZ3 Transistors General purpose transistor isolated transistor and diode QSZ3 A 2SB1705 and a 2SD2670 are housed independently in a TSMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver QSZ3 zStructure Silicon epitaxial planar transistor


    Original     		PDF 2SB1705 2SD2670

    Untitled

    Abstract: No abstract text available
    Text: US5L10 Transistors General purpose transistor isolated transistor and diode US5L10 A 2SD2674 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) 0.2 (1) 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor


    Original     		PDF US5L10 2SD2674 RB461F 15Max. US5L10 85Max. 1000m

    "marking code" Z04

    Abstract: 2SD2671 marking z04 2SB1706 marking code Z04 Z04 MARKING
    Text: QSZ4 Transistors General purpose transistor isolated transistor and diode QSZ4 A 2SB1706 and a 2SD2671 are housed independently in a TSMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver QSZ4 zStructure Silicon epitaxial planar transistor


    Original     		PDF 2SB1706 2SD2671 "marking code" Z04 marking z04 marking code Z04 Z04 MARKING

    MARKING L09

    Abstract: No abstract text available
    Text: US5L9 Transistors General purpose transistor isolated transistor and diode US5L9 A 2SB1709 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) (1) (5) 0.2 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor


    Original     		PDF 2SB1709 RB461F 15Max. 85Max. 1000m MARKING L09

    2SB1709

    Abstract: RB461F
    Text: US5L9 Transistors General purpose transistor isolated transistor and diode US5L9 A 2SB1709 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) (1) (5) 0.2 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor


    Original     		PDF 2SB1709 RB461F 85Max. 15Max.

    2SD2670

    Abstract: marking code z03 2SB1705
    Text: QSZ3 Transistors General purpose transistor isolated transistor and diode QSZ3 A 2SB1705 and a 2SD2670 are housed independently in a TSMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver QSZ3 zStructure Silicon epitaxial planar transistor


    Original     		PDF 2SB1705 2SD2670 marking code z03

    2SD2696

    Abstract: EMX28
    Text: EMX28 Transistors Low frequency transistor, complex 2-elements Bipolar Transistor EMX28 zStructure NPN Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SD2696 dies are incorpolated in the EMT6 package.


    Original     		PDF EMX28 2SD2696 300mA 100mA EMX28

    Untitled

    Abstract: No abstract text available
    Text: US5L9 Transistors General purpose transistor isolated transistor and diode US5L9 A 2SB1709 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) (1) (5) 0.2 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor


    Original     		PDF 2SB1709 RB461F 15Max. 85Max.

    2SD2696

    Abstract: No abstract text available
    Text: 2SD2696 Transistors Low frequency transistor for amplification 2SD2696 zStructure NPN Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) 1.2 0.32 zFeatures 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size.


    Original     		PDF 2SD2696 400mA 300mA 100mA 2SD2696

    Untitled

    Abstract: No abstract text available
    Text: QSL10 Transistors General purpose transistor isolated transistor and diode QSL10 A 2SD2674 and a RB461F are housed independently in a TSMT5 package. zApplications DC / DC converter Motor driver zExternal dimensions (Units : mm) QSL10 (5) (1) zStructure Silicon epitaxial planar transistor


    Original     		PDF QSL10 2SD2674 RB461F QSL10

    Untitled

    Abstract: No abstract text available
    Text: QSL9 Transistors General purpose transistor isolated transistor and diode QSL9 A 2SB1709 and a RB461F are housed independently in a TSMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver QSL9 0.3 to 0.6 zStructure Silicon epitaxial planar transistor


    Original     		PDF 2SB1709 RB461F

    2SA2018

    Abstract: RB521S-30 2SA20
    Text: UML6N Transistors General purpose transistor isolated transistor and diode UML6N 2SA2018 and RB521S-30 are housed independently in a UMT package. 1.3 2.0 0.65 0.65 0.9 (1) (5) 2.1 0~0.1 0.1Min. zStructure Silicon epitaxial planar transistor Schottky barrier diode


    Original     		PDF 2SA2018 RB521S-30 SC-88A 2SA20

    vmt3

    Abstract: No abstract text available
    Text: Low frequency transistor for amplification 2SD2696 zStructure NPN Silicon Epitaxial Planar Transistor zDimensions (Unit : mm) zFeatures 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size. 2) Collector saturation voltage is low.


    Original     		PDF 2SD2696 400mA 300mA 100mA 2SD2696 R0039A vmt3

    2SB1709

    Abstract: RB461F QSL9
    Text: QSL9 Transistors General purpose transistor isolated transistor and diode QSL9 A 2SB1709 and a RB461F are housed independently in a TSMT5 package. zExternal dimensions (Unit : mm) zApplications DC / DC converter Motor driver QSL9 0.3 to 0.6 zStructure Silicon epitaxial planar transistor


    Original     		PDF 2SB1709 RB461F QSL9

    2SD2696

    Abstract: EMX28
    Text: Low frequency transistor Complex 2-elements Bipolar Transistor EMX28 zDimensions (Unit : mm) zStructure NPN Silicon Epitaxial Planar Transistor EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SD2696 dies are incorpolated in the EMT6 package. Collector saturation voltage is low.


    Original     		PDF EMX28 2SD2696 300mA 100mA R0039A EMX28

    2SD2696

    Abstract: No abstract text available
    Text: Low frequency transistor for amplification 2SD2696 zDimensions (Unit : mm) zStructure NPN Silicon Epitaxial Planar Transistor zFeatures 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size. 2) Collector saturation voltage is low.


    Original     		PDF 2SD2696 400mA 300mA 100mA R0039A 2SD2696

    2SB1690

    Abstract: 2SD2653
    Text: QSZ1 Transistors General purpose transistor QSZ1 A 2SB1690 and a 2SD2653 are housed independently in a TSMT5 package. zExternal dimensions Unit : mm zApplications DC / DC converter Motor driver QSZ1 zStructure Silicon epitaxial planar transistor ROHM : TSMT5


    Original     		PDF 2SB1690 2SD2653

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT BFS17A NPN 3 GHz wideband transistor Product specification September1995 NXP Semiconductors Product specification NPN 3 GHz wideband transistor BFS17A DESCRIPTION NPN transistor in a plastic SOT23 package. 3 handbook, halfpage APPLICATIONS


    Original     		PDF BFS17A September1995 MSB003 R77/02/pp9

    z02 marking

    Abstract: transistor marking z02 QSZ2 2SB1695 2SD2657
    Text: QSZ2 Transistors General purpose transistor QSZ2 A 2SB1695 and a 2SD2657 are housed independently in a TSMT5 package. zExternal dimensions Unit : mm zApplications DC / DC converter Motor driver QSZ2 zStructure Silicon epitaxial planar transistor ROHM : TSMT5


    Original     		PDF 2SB1695 2SD2657 z02 marking transistor marking z02 QSZ2

    2SC3603

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC3603 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm The 2SC3603 is an NPN epitaxial transistor designed for lownoise amplification at 0.5 to 4.0 GHz. This transistor has low-noise


    OCR Scan     		PDF 2SC3603 2SC3603