TRANSISTOR ZO 109 Search Results

TRANSISTOR ZO 109 Result Highlights (6)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB

TRANSISTOR ZO 109 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
6943-3 Abstract: No abstract text available Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features ? Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz Suitable for PCS CDMA and UMTS applications	Original	PDF	OT343 CFH800 Rn/50 6943-3
transistor Zo 105 Abstract: 6943-3 55086 HEMT marking P 05973 Text: P - HEMT Transistor CFH800 Preliminary Datasheet Features • • • • Low noise figure and high associated gain for high IP3 receiver stages up to 4GHz	Original	PDF	OT343 CFH800 OT343 D-130 Rn/50 transistor Zo 105 6943-3 55086 HEMT marking P 05973
TRANSISTOR zo 109 ma Abstract: transistor zo 109 transistor 86 IC 7585 midium power uhf transistor B15V140 microwave transistor ZO 109 transistor Text: BIPOLARICS, INC. Part Number B15V140 MEDIUM POWER SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET DESCRIPTION AND APPLICATIONS: FEATURES: • Bipolarics' B15V140 is a high performance silicon bipolar transistor intended for medium power linear and Class C	Original	PDF	B15V140 B15V140 OT-223 OT-103 TRANSISTOR zo 109 ma transistor zo 109 transistor 86 IC 7585 midium power uhf transistor microwave transistor ZO 109 transistor
transistor zo 607 Abstract: ZO 607 MA ZO 607 transistor TRANSISTOR S 812 TRANSISTOR S 838 T72 marking 530 279 NPN transistor mhz s-parameter TYP 513 309 RF POWER TRANSISTOR NPN Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4570 DESCRIPTION •High Current-Gain—Bandwidth Product fT= 5.5 GHz TYP. @VCE = 5 V, IC = 5 mA, f = 1.0 GHz ·Low COB 0.7pF TYP. @VCB = 5 V, IE = 0, f = 1.0 MHz APPLICATIONS	Original	PDF	2SC4570 transistor zo 607 ZO 607 MA ZO 607 transistor TRANSISTOR S 812 TRANSISTOR S 838 T72 marking 530 279 NPN transistor mhz s-parameter TYP 513 309 RF POWER TRANSISTOR NPN
data sheet 702 TRANSISTOR npn Abstract: 400-125 NPN transistor mhz s-parameter RF NPN POWER TRANSISTOR 2.5 GHZ 2SC4571 Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4571 DESCRIPTION •High Current-Gain—Bandwidth Product fT= 5.0 GHz TYP. @VCE = 5 V, IC = 5 mA, f = 1.0 GHz ·Low COB 0.9pF TYP. @VCB = 5 V, IE = 0, f = 1.0 MHz APPLICATIONS	Original	PDF	2SC4571 data sheet 702 TRANSISTOR npn 400-125 NPN transistor mhz s-parameter RF NPN POWER TRANSISTOR 2.5 GHZ 2SC4571
Rf amplifier with frequency 1150 MHZ 20 db gain Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10150 . . . designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak	Original	PDF	MRF10500 MRF10150 MRF10150 Rf amplifier with frequency 1150 MHZ 20 db gain
2663 transistor Abstract: IC 7667 transistor 9651 data sheet 702 TRANSISTOR npn 4687 transistor transistor RF S-parameters 2746 transistor ic 744 npn transistor dc 558 pc 817 Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC4260 DESCRIPTION •Low Noise ·High Gain APPLICATIONS ·Designed for use in UHF frequency converter , wide band amplifier. ABSOLUTE MAXIMUM RATINGS Ta=25℃ SYMBOL PARAMETER	Original	PDF	2SC4260 2663 transistor IC 7667 transistor 9651 data sheet 702 TRANSISTOR npn 4687 transistor transistor RF S-parameters 2746 transistor ic 744 npn transistor dc 558 pc 817
transistor 3506 nec Abstract: 7890 NEC PIN CONNECTIONS OF IC 4047 semiconductor ic pt 2285 2SC5185 2SC5185-T1 2SC5185-T2 cb 753 u 224-1 MAG transistor 224-1 base collector emitter Text: DATA SHEET SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DIMENSIONS • Low Noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz	Original	PDF	2SC5185 transistor 3506 nec 7890 NEC PIN CONNECTIONS OF IC 4047 semiconductor ic pt 2285 2SC5185 2SC5185-T1 2SC5185-T2 cb 753 u 224-1 MAG transistor 224-1 base collector emitter
ZO 607 transistor Abstract: transistor zo 607 zo 607 ZO 607 MA transistor on 4408 zo 607 MA transistor TC2483 transistor ZO 607 MA 2SC5186 2SC5186-T1 Text: DATA SHEET SILICON TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise PACKAGE DIMENSIONS NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz	Original	PDF	2SC5186 ZO 607 transistor transistor zo 607 zo 607 ZO 607 MA transistor on 4408 zo 607 MA transistor TC2483 transistor ZO 607 MA 2SC5186 2SC5186-T1
transistor zo 107 Abstract: 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features ? Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz	Original	PDF	OT343 CFH400 Q62702-G0116 volt-69 Rn/50 transistor zo 107 831 transistor Transistor 933 transistor 131-6 TRANSISTOR zo 109 ma Hemt transistor
transistor zo 107 Abstract: 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor Text: CFH400 P - HEMT Transistor P r e l i mi n a r y D a t a s h e e t Features • • • • • Low noise figure and high associated Gain for high IP3 receiver stages up to 4GHz	Original	PDF	OT343 CFH400 Q62702-G0116 OT343 vol51 Rn/50 transistor zo 107 9412 transistor transistor zo 109 51687 72741 TRANSISTOR zo 109 ma CFH400 9412 opt i 72741 Hemt transistor
transistor on 4409 Abstract: transistor 3504 nec marking 1147 IC 6 pin nec 3504 ic transistor zo 607 zo 607 MA 2SC5180 Text: DATA SHEET SILICON TRANSISTOR 2SC5180 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low current consumption and high gain PACKAGE DIMENSIONS Units : mm S21e = 12 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz	Original	PDF	2SC5180 2SC5180 transistor on 4409 transistor 3504 nec marking 1147 IC 6 pin nec 3504 ic transistor zo 607 zo 607 MA
transistor j380 Abstract: motorola J122 j392 transistor j122 J122 transistor j113 equivalent ic 65 MHZ rf transmitter ON SEMICONDUCTOR J122 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10350 Designed for 1025 – 1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz Output Power = 350 Watts Peak	Original	PDF	MRF10350 MRF10350 transistor j380 motorola J122 j392 transistor j122 J122 transistor j113 equivalent ic 65 MHZ rf transmitter ON SEMICONDUCTOR J122
zo 405 Abstract: 2SC4993 Text: 2SC4993 Silicon NPN Bipolar Transistor Application MPAK–4 VHF & UHF wide band amplifier 4 Features • High gain bandwidth product fT = 10.5 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.2 dB typ at f = 900 MHz 3 1 2 1. Collector 2. Emitter	Original	PDF	2SC4993 zo 405 2SC4993

zo 607 p 408 Abstract: No abstract text available Text: 19-1091; Rev 0; 6/96 IT K ATION EVALU BLE AVAILA +3.3V, 622Mbps, SDH/SONET 1:4 Deserializer with LVDS Outputs _Features ♦ Single +3.3V Supply _Applications _Ordering Information ♦ 622Mbps Serial to 155Mbps Parallel Conversion	Original	PDF	622Mbps, 622Mbps 155Mbps 265mW MAX3681 1-0056A zo 607 p 408
MAR 618 transistor Abstract: MAR 737 RD06HVF1 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD06HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 175MHz,6W OUTLINE DESCRIPTION APPLICATION 3.2+/-0.4 12.3MIN 2 9+/-0.4 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz	Original	PDF	RD06HVF1 175MHz 175MHz RD06HVF1 RD06HVFth MAR 618 transistor MAR 737 transistor d 1557 transistor mar 618 how to use mos transistor in power circuit rf transistor mar 8 RD06HVF1-101 100OHM MITSUBISHI RF POWER MOS FET
transistor j380 Abstract: MRF10350 Text: Order this document by MRF10350/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10350 Designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz	Original	PDF	MRF10350/D MRF10350 transistor j380 MRF10350
NEC 2933 Abstract: 2SC5183 2SC5183R 2SC5183R-T1 2SC5183R-T2 NEC 4559 ic 4559 transistor B 722 Text: DATA SHEET SILICON TRANSISTOR 2SC5183R NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES PACKAGE DRAWINGS Units: mm • Low noise NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz	Original	PDF	2SC5183R NEC 2933 2SC5183 2SC5183R 2SC5183R-T1 2SC5183R-T2 NEC 4559 ic 4559 transistor B 722
376B Abstract: MRF10150 MRF10500 Text: Order this document by MRF10150/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor MRF10150 . . . designed for 1025–1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode–S transmitters. • Guaranteed Performance @ 1090 MHz	Original	PDF	MRF10150/D MRF10150 376B MRF10150 MRF10500
yb 0d Abstract: No abstract text available Text: Aß Avionics Pulsed Power Transistor PH 1090-400S Preliminary 400 Watts, 1030-1090 MHz, 10 [is Pulse, 1% Duty Features Outline Drawing • Designed for Short Pulse IFF Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation	OCR Scan	PDF	1090-400S yb 0d
Untitled Abstract: No abstract text available Text: 3SK290 Silicon N-Channel Dual Gate MOS FET HITACHI ADE-208-271 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.3 dB Typ. at f = 900 MHz • High gain. PG = 19.3 dB Typ. at f = 900 MHz Outline CMPAK-4 1. 2. 3. 4. 1098 Source	OCR Scan	PDF	3SK290 ADE-208-271 hand52
RF power amplifier MHz Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Pulse Power Transistor . . . designed for 1025-1150 MHz pulse common base amplifier applications such as TCAS, TACAN and Mode-S transmitters. • • Guaranteed Performance @ 1090 MHz Output Power = 150 Watts Peak	OCR Scan	PDF	MRF10500 376B-0erial MRF10150 RF power amplifier MHz
ic CD 4047 Abstract: NEC D 809 F transistor NEC D 586 2SC5185 2SC5185-T1 2SC5185-T2 TC-2482 7890 NEC 224-1 MAG nec 1299 662 Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5185 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • • PACKAGE DIMENSIONS Low Noise NF = 1 .3 dB typ. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz NF = 1.3 dB typ.	OCR Scan	PDF	2SC5185 2SC5185-T1 2SC5185-T2 ic CD 4047 NEC D 809 F transistor NEC D 586 2SC5185-T2 TC-2482 7890 NEC 224-1 MAG nec 1299 662
NF 831 Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Noise PACKAGE DIMENSIONS NF = 1.3 dB typ. @ V ce = 2 V, Ic = 3 mA, f = 2 GHz NF = 1.3 dB typ.	OCR Scan	PDF	2SC5186 2SC5186-T1 NF 831

TRANSISTOR ZO 109 Search Results

TRANSISTOR ZO 109 Result Highlights (6)

TRANSISTOR ZO 109 Datasheets Context Search

6943-3

transistor Zo 105

TRANSISTOR zo 109 ma

transistor zo 607

data sheet 702 TRANSISTOR npn

Rf amplifier with frequency 1150 MHZ 20 db gain

2663 transistor

transistor 3506 nec

ZO 607 transistor

transistor zo 107

transistor zo 107

transistor on 4409

transistor j380

zo 405

zo 607 p 408

MAR 618 transistor

transistor j380

NEC 2933

376B

yb 0d

Untitled

RF power amplifier MHz

ic CD 4047

NF 831