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    TRANSISTOR Z4 30 Search Results

    TRANSISTOR Z4 30 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR Z4 30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor z3

    Abstract: TRANSISTOR Z4
    Text: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-max


    Original     		PDF RT230PD 900MHz 47dBm SP-12 RT230PD 50MHz SP-12 transistor z3 TRANSISTOR Z4

    TRANSISTOR Z4

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —


    Original     		PDF MRF392 MRF392 TRANSISTOR Z4

    TRANSISTOR Z4

    Abstract: transistor Z2 transistor r47 transistor 1608 transistor z5 transistor z4 n transistor z4 51 transistor z3 rt230pd IRF 1470
    Text: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-Max


    Original     		PDF RT230PD 900MHz 47dBm SP-12 RT230PD 50MHz SP-12 TRANSISTOR Z4 transistor Z2 transistor r47 transistor 1608 transistor z5 transistor z4 n transistor z4 51 transistor z3 IRF 1470

    transistor C4

    Abstract: No abstract text available
    Text: Power Transistor RT230PD Product Features Application • 50 ~ 4000 MHz • 18dB Gain@900MHz • 34.5dBm P1dB@900MHz • 47dBm Output IP3 • GaAs HFET • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • ISM • MMDS • Wi-Fi, Wi-Max


    Original     		PDF RT230PD 900MHz 47dBm SP-12 RT230PD 50MHz SP-12 transistor C4

    transistor z5

    Abstract: erie redcap IC 2025 NPN TRANSISTOR Z4 RF push pull power amplifier TRANSISTOR Z4 MRF392 redcap 7w120 transistor D 716
    Text: Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —


    Original     		PDF MRF392/D MRF392 MRF392 i1-44-844-8298 transistor z5 erie redcap IC 2025 NPN TRANSISTOR Z4 RF push pull power amplifier TRANSISTOR Z4 redcap 7w120 transistor D 716

    MRF392

    Abstract: TRANSISTOR Z4 3142 equivalent J044 Z1 Transistor 6 pin transistor Z6 Z6 82 mini cap 744A-01 LX125
    Text: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —


    Original     		PDF MRF392/D MRF392 MRF392/D* MRF392 TRANSISTOR Z4 3142 equivalent J044 Z1 Transistor 6 pin transistor Z6 Z6 82 mini cap 744A-01 LX125

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —


    Original     		PDF MRF392/D MRF392 MRF392/D*

    Z1 Transistor

    Abstract: MRF392
    Text: MOTOROLA Order this document by MRF392/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Push-Pull RF Power Transistor MRF392 Designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 400 MHz Characteristics —


    Original     		PDF MRF392/D MRF392 MRF392/D* Z1 Transistor MRF392

    atc100a

    Abstract: omni spectra sma TRANSISTOR Z4 OZ 960 LDMOS 15w RO4350 25 pin microstrip connector transistor z9 transistor z5
    Text: RF Power Field Effect Transistor LDMOS, 800—1700 MHz, 15W, 26V 6/30/05 MAPLST0817-015PP Preliminary Features Package Style Designed for broadband commercial applications up to 1.7GHz High Gain, High Efficiency and High Linearity Typical P1dB performance at 960MHz,


    Original     		PDF MAPLST0817-015PP 960MHz, 26Vdc, 960MHz atc100a omni spectra sma TRANSISTOR Z4 OZ 960 LDMOS 15w RO4350 25 pin microstrip connector transistor z9 transistor z5

    MRF-393

    Abstract: 8w RF POWER TRANSISTOR NPN
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF393 . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics —


    Original     		PDF MRF393 MRF393 MRF-393 8w RF POWER TRANSISTOR NPN

    TRANSISTOR Z4

    Abstract: "100 6W" RF push pull power amplifier MRF393 Transistor z1 744A-01
    Text: Order this document by MRF393/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF393 . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics —


    Original     		PDF MRF393/D MRF393 TRANSISTOR Z4 "100 6W" RF push pull power amplifier MRF393 Transistor z1 744A-01

    1000 watts amplifier schematic diagram with part

    Abstract: MRF844 UNELCO MICA CAPACITORS schematic diagram 800 watt power amplifier AN-578 transistor Common Base configuration uhf motorola glass capacitor MICA Microwave mini electrolytic
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by EB105/D SEMICONDUCTOR ENGINEERING BULLETIN EB105 A 30 WATT, 800 MHz AMPLIFIER DESIGN Freescale Semiconductor, Inc. Prepared by: Alan Wood Semiconductor Product Sector INTRODUCTION CIRCUIT DESCRIPTION


    Original     		PDF EB105/D EB105 MRF844 1000 watts amplifier schematic diagram with part UNELCO MICA CAPACITORS schematic diagram 800 watt power amplifier AN-578 transistor Common Base configuration uhf motorola glass capacitor MICA Microwave mini electrolytic

    MRF844

    Abstract: UNELCO MICA CAPACITORS 1000 watts amplifier schematic diagram with part AN-578 microwave laminate board Application motorola NIPPON CAPACITORS EB105 Copper clad laminate an578
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by EB105/D SEMICONDUCTOR ENGINEERING BULLETIN ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 EB105 A 30 WATT, 800 MHz AMPLIFIER DESIGN ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Freescale Semiconductor, Inc.


    Original     		PDF EB105/D EB105 MRF844 UNELCO MICA CAPACITORS 1000 watts amplifier schematic diagram with part AN-578 microwave laminate board Application motorola NIPPON CAPACITORS EB105 Copper clad laminate an578

    "RF Power Transistor"

    Abstract: AGR18030EF JESD22-C101A transistor equivalent table 557
    Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		PDF AGR18030EF AGR18030EF 21045F "RF Power Transistor" JESD22-C101A transistor equivalent table 557

    8w RF POWER TRANSISTOR NPN

    Abstract: MRF393
    Text: MOTOROLA Order this document by MRF393/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon Push-Pull RF Power Transistor MRF393 . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range. • Specified 28 Volt, 500 MHz Characteristics —


    Original     		PDF MRF393/D MRF393 MRF393/D* 8w RF POWER TRANSISTOR NPN MRF393

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF393/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Push-Pull RF Power Transistor MRF393 . . . designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.


    Original     		PDF MRF393/D MRF393 MRF393/D*

    transistor equivalent table 557

    Abstract: 21045F
    Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		PDF AGR18030EF DS04-204RFPP PB04-101RFPP) transistor equivalent table 557 21045F

    transistor C456

    Abstract: microstripline FR4 AT-41511 4.1 amplifier circuit diagram 2907A PNP bipolar transistors microstripline 41511 FR4 epoxy dielectric constant 4.4 AT-41411 AT-41486
    Text: Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Circuit Design Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular and


    Original     		PDF AT-41511 5964-3853E transistor C456 microstripline FR4 4.1 amplifier circuit diagram 2907A PNP bipolar transistors microstripline 41511 FR4 epoxy dielectric constant 4.4 AT-41411 AT-41486

    2907A PNP bipolar transistors

    Abstract: microstripline FR4 transistor C456 AT-41511 schematic power supply circuit diagram using ic 3 AT-41486 AT-41411 schematic power supply circuit diagram using ic AT41511 Transistor z1
    Text: Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular


    Original     		PDF AT-41511 5964-3853E 2907A PNP bipolar transistors microstripline FR4 transistor C456 AT-41511 schematic power supply circuit diagram using ic 3 AT-41486 AT-41411 schematic power supply circuit diagram using ic AT41511 Transistor z1

    AGR18030EF

    Abstract: JESD22-C101A
    Text: Preliminary Data Sheet November 2004 AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication


    Original     		PDF AGR18030EF AGR18030EF DS04-204RFPP PB04-101RFPP) JESD22-C101A

    AT-41511

    Abstract: 2907A PNP bipolar transistors transistor C456 microstripline Transistor z1 2907A PNP bipolar transistors datasheet microstripline FR4 Catalog Bipolar Transistor schematic power supply circuit diagram using ic 3 AT-41411
    Text: hH Two-Stage 800 – 1000 MHz Amplifier Using the AT-41511 Silicon Bipolar Transistor Application Note 1084 Introduction Commercial markets in the VHF through L band frequency range require low cost, high performance components. In many applications, such as cellular


    Original     		PDF AT-41511 5964-3853E AT-41511 2907A PNP bipolar transistors transistor C456 microstripline Transistor z1 2907A PNP bipolar transistors datasheet microstripline FR4 Catalog Bipolar Transistor schematic power supply circuit diagram using ic 3 AT-41411

    Untitled

    Abstract: No abstract text available
    Text: MC10192 Quad Bus Driver The MC10192 contains four line drivers with complementary outputs. Each driver has a Data D input and shares an Enable (E) input with another driver. The two driver outputs are the uncommitted collectors of a pair of NPN transistors operating as a current switch.


    Original     		PDF MC10192

    diode zener c25

    Abstract: diode zener c29 zener DIODE C25 transistor c323 zener diode c18 st ST transistor c322 z5 zener diode diode zener c23 diode zener c26 zener diode c32
    Text: AN15 D E S I G N C O N S I D E R A T I O N S F O R T H E S I 303 4/38/4 4 Introduction The Si3034/38/44 direct access arrangement DAA provides worldwide compliance for modems and other communications equipment that is connected to analog telephone networks. Many different standards exist to


    Original     		PDF Si3034/38/44 Si3034/ IEC1000-4 diode zener c25 diode zener c29 zener DIODE C25 transistor c323 zener diode c18 st ST transistor c322 z5 zener diode diode zener c23 diode zener c26 zener diode c32

    Untitled

    Abstract: No abstract text available
    Text: fZ 7 S G S -T H O M S O N ^ 7 #. K M SD1540 « « ® « ! RF & M ICROW AVE TR AN SISTO RS AVIONICS APP LIC ATIO N S • DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS ■ 350 WATTS typ. IFF 1030 - 1090 MHz . 300 WATTS (min.) DME 1025 - 1150 MHz


    OCR Scan     		PDF SD1540 SD1540