TRANSISTOR Z2 Search Results

TRANSISTOR Z2 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

TRANSISTOR Z2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MN1280 Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor	Original		PDF
oz960 Abstract: khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors	Original	KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb9D5N20P MB4213 KIA78pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j	PDF
la 4440 amplifier circuit diagram 300 watt Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode	OCR Scan	AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492	PDF
power Junction FET advantages and disadvantages Abstract: 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet Text: High Frequency Transistor Primer Part III Thermal Properties Table of Contents I. Thermal Resistance I. A. Definition A transistor, bipolar or FET, has a maximum temperature which cannot be exceeded without destroying the device or at least shortening its life. The heat is generated in a bipolar transistor	Original	ED-19, 5966-3084E power Junction FET advantages and disadvantages 5257 transistor thermal conductivity ceramic FET 2T transistor surface mount microwave fet	PDF
2N6128 Abstract: No abstract text available Text: TYPE 2N6128 N-P-N SILICON POWER TRANSISTOR X <D H HIGH-FREQUENCY, HIGH-POWER TRANSISTOR WITH COMPUTER-DESIGNED ISOTHERMAL GEOMETRY mc < z z2 §8» 40 mJ Reverse Energy Rating with lc - 20 A and 4 V Reverse Bias Isolated Stud Package 2 o m 30 100 W at 50°C Case Temperature	OCR Scan	2N6128 2N6127	PDF
Untitled Abstract: No abstract text available Text: High Speed Transistor Couplers Single/Dual Channel 8 Pin DIP Part M ih* m •m /im *. rM R im <52. 9 ImA 6N135 6N136 ICPL4502 Single channel Transistor Output 7 High C.M.R. 1 kv/tis. min 19 ICPL2533 Dual Channel Transistor Output «» F tm ■HT» f W M ilM M t a iilii .	OCR Scan	6N135 6N136 ICPL4502 ICPL2530 ICPL2531 ICPL2533 6N137 ICPL2601 ICPL2611 ICPL2630	PDF
Motorola 680 Abstract: Case 449-02 Motorola transistor 358 TRANSISTOR Z4 marking Z4 marking Z6 MRF9822T1 transistor 9822 nippon ferrite vk200 ferrite bead Text: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT	Original	MRF9822T1/D MRF9822T1 MRF9822/D Motorola 680 Case 449-02 Motorola transistor 358 TRANSISTOR Z4 marking Z4 marking Z6 MRF9822T1 transistor 9822 nippon ferrite vk200 ferrite bead	PDF
Untitled Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DAT M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 PINNING - SOT538A FEATURES • High power gain	Original	M3D438 BLA1011-2 OT538A SCA75 R77/05/pp9	PDF
Motorola transistor 358 Abstract: Case 449-02 Text: MOTOROLA Order this document by MRF9822T1/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Small Signal Line Gallium Arsenide PHEMT MRF9822T1 Pseudomorphic High Electron Mobility Transistor 31 dBm, 850 MHz HIGH FREQUENCY POWER TRANSISTOR GaAs PHEMT	Original	MRF9822T1/D MRF9822T1 MRF9822T1 MRF9822T1/D Motorola transistor 358 Case 449-02	PDF
MCE021 Abstract: No abstract text available Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLF2043 UHF power LDMOS transistor Product specification Supersedes data of 2002 Jul 02 2002 Sep 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF2043 PINNING - SOT538A FEATURES • Easy power control	Original	M3D438 BLF2043 SCA74 613524/05/pp12 MCE021	PDF
transistor SMD Z2 Abstract: 200B BLA1011-2 MGU487 SOT538A The 2003 is a COMMON BASE transistor smd transistor z1 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A • High power gain	Original	M3D438 BLA1011-2 OT538A SCA75 R77/05/pp9 transistor SMD Z2 200B BLA1011-2 MGU487 SOT538A The 2003 is a COMMON BASE transistor smd transistor z1	PDF
MGU487 Abstract: 200B BLA1011-2 NV SMD TRANSISTOR Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2002 Jun 17 2002 Oct 02 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A • High power gain	Original	M3D438 BLA1011-2 OT538A SCA74 613524/04/pp8 MGU487 200B BLA1011-2 NV SMD TRANSISTOR	PDF
bipolar transistor ghz s-parameter Abstract: 1565E HBFP-0450 LL2012-F 5e19 bipolar transistor s-parameter COND10 Text: 1800 MHz Medium Power Amplifier using the HBFP-0450 Silicon Bipolar Transistor Application Note 1168 Introduction HBFP-0450 Medium Power Amplifier Design Avago Technologies’ HBFP-0450 is a high performance, medium power Isolated Collector transistor housed in	Original	HBFP-0450 HBFP-0450 OT-343 SC-70) 031-inch 59257503E-13 292E-1 bipolar transistor ghz s-parameter 1565E LL2012-F 5e19 bipolar transistor s-parameter COND10	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF

ballast electronic hps Abstract: TRANSISTOR TC 100 mje1800b 740 data sheat AMD 754 hps electronic ballast jf18008 221A-06 AN1040 MJE18006 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE18006* M JF18006* Designer’s Data Sheet SWITCHMODE™ ‘ Motorola Preferred Dtvlct NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 6.0 AMPERES 1000 VOLTS 40 and 100 WATTS	OCR Scan	MJE/MJF18006 O-220 O-220 MJF18006, ballast electronic hps TRANSISTOR TC 100 mje1800b 740 data sheat AMD 754 hps electronic ballast jf18008 221A-06 AN1040 MJE18006	PDF
transistor smd z9 Abstract: transistor smd z8 Z9 TRANSISTOR SMD 600F8R2CT250 J374 SMD Transistor z6 AGR18045E JESD22-C101A CRCW12064R75F100 vishay 1206 Text: AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18045E AGR18045E transistor smd z9 transistor smd z8 Z9 TRANSISTOR SMD 600F8R2CT250 J374 SMD Transistor z6 JESD22-C101A CRCW12064R75F100 vishay 1206	PDF
transistor equivalent table 557 Abstract: 21045F Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030EF DS04-204RFPP PB04-101RFPP) transistor equivalent table 557 21045F	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
transistor smd z9 Abstract: Z9 TRANSISTOR SMD transistor smd z8 smd transistor Z10 WECO Electrical Connectors weco AGR18045E JESD22-C101A 600F8R2CT250 Text: AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18045E AGR18045E AGR18045EF AGR18045EU AGR21045F transistor smd z9 Z9 TRANSISTOR SMD transistor smd z8 smd transistor Z10 WECO Electrical Connectors weco JESD22-C101A 600F8R2CT250	PDF
"RF Power Transistor" Abstract: AGR18030EF JESD22-C101A transistor equivalent table 557 Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	AGR18030EF AGR18030EF 21045F "RF Power Transistor" JESD22-C101A transistor equivalent table 557	PDF
transistor 832 Abstract: No abstract text available Text: BLF6G15LS-250PBRN Power LDMOS transistor Rev. 2 — 18 July 2012 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance	Original	BLF6G15LS-250PBRN transistor 832	PDF
Untitled Abstract: No abstract text available Text: BLF8G19LS-170BV Power LDMOS transistor Rev. 2 — 28 March 2013 Product data sheet 1. Product profile 1.1 General description 170 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 1990 MHz.	Original	BLF8G19LS-170BV	PDF
BLF8G27LS-140V Abstract: SOT1120B Text: BLF8G27LS-140V Power LDMOS transistor Rev. 2 — 27 March 2013 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2600 MHz to 2700 MHz.	Original	BLF8G27LS-140V Excelle10 BLF8G27LS-140V SOT1120B	PDF
1206 PHILIPS Abstract: transistor 86 Text: BLF8G22LS-160BV Power LDMOS transistor Rev. 1 — 25 June 2012 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2000 MHz to 2200 MHz.	Original	BLF8G22LS-160BV excell11 1206 PHILIPS transistor 86	PDF

TRANSISTOR Z2 Search Results

TRANSISTOR Z2 Result Highlights (5)

TRANSISTOR Z2 Datasheets Context Search

MN1280

oz960

la 4440 amplifier circuit diagram 300 watt

power Junction FET advantages and disadvantages

2N6128

Untitled

Motorola 680

Untitled

Motorola transistor 358

MCE021

transistor SMD Z2

MGU487

bipolar transistor ghz s-parameter

y51 h 120c

ballast electronic hps

transistor smd z9

transistor equivalent table 557

sx3704

transistor smd z9

"RF Power Transistor"

transistor 832

Untitled

BLF8G27LS-140V

1206 PHILIPS