bd179
Abstract: No abstract text available
Text: / = 7 SCS-THOMSON moos Li gTFi M(gS BD179 NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE • NPN TRANSISTOR APPLICATION . GENERAL PURPOSE SWITCHING DESCRIPTION The BD179 is a silicon epitaxial planar NPN transistor in Jedec SOT-32 plastic package,
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BD179
BD179
OT-32
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transistor application
Abstract: transistor XMFP1-M3 power transistor 23 transistor marking transistor mesfet low noise transistor "Power transistor" mesfet low noise DECT 6.0
Text: Microwave Components Microwave Components Field-Effect Transistor MESFET Low Noise Transistor 1.5 0.4 0.65 (2) (3) B 2.9 1.9 A (4) 0.8 0.3 (1) XMFS2-M1 Pin (1):Source (2):Gate (3):Source (4):Drain Marking A : Part No. B : Lot No. in mm Type Application Gain
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BUK617-500AE
Abstract: SVM91 TRANSISTOR C 557 B W 21
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK617-500AE/BE Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in ISOTOP envelope. FREDFET with fast recovery
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BUK617-500AE/BE
BUK617
-500AE
-500BE
BUK617-500AE
SVM91
TRANSISTOR C 557 B W 21
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transistor XM
Abstract: transistor power transistor k 30 transistor TRANSISTOR P 3 transistor mesfet transistor l 2 xmfp1-m3
Text: Microwave Components Microwave Components Field-Effect Transistor MESFET Low Noise Transistor r •■ i m cd (3l (2 ) '~'B - (4) m -m l XMFS2-M1 Pm M arking (1) So urce 12V. G a te (3): Source (4) : Dram A : Part No. B . Lo i No. in mm Gain (dB) Minimum Noise Figure
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rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
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REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
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xk30
Abstract: No abstract text available
Text: SILICON TRANSISTOR 2SD1614 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION 2SD1614 is designed for audio frequency power amplifier and switching application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS in m illim eters
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2SD1614
2SD1614
xk30
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Untitled
Abstract: No abstract text available
Text: RN1710JE,RN1711JE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1710JE, RN1711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (5 pin)
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RN1710JE
RN1711JE
RN1710JE,
RN2710JE
RN2711JE
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RN1910FE
Abstract: RN1911FE RN2910FE RN2911FE
Text: RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1910FE, RN1911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)
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RN1910FE
RN1911FE
RN1910FE,
RN2910FE,
RN2911FE
RN1910FE
RN1911FE
RN2910FE
RN2911FE
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Untitled
Abstract: No abstract text available
Text: RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN1910FE, RN1911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6-pin)
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RN1910FE
RN1911FE
RN1910FE,
RN2910FE,
RN2911FE
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RN1910FE
Abstract: RN1911FE RN2910FE RN2911FE
Text: RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN1910FE,RN1911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6-pin)
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RN1910FE
RN1911FE
RN2910FE,
RN2911FE
RN1911FE
RN2910FE
RN2911FE
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Untitled
Abstract: No abstract text available
Text: RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1910FE,RN1911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6 pin)
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RN1910FE
RN1911FE
RN2910FE,
RN2911FE
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RN1910FE
Abstract: RN1911FE RN2910FE RN2911FE
Text: RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN1910FE,RN1911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6-pin)
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RN1910FE
RN1911FE
RN2910FE,
RN2911FE
RN1911FE
RN2910FE
RN2911FE
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Toshiba xm
Abstract: No abstract text available
Text: RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN1910FE,RN1911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6-pin)
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RN1910FE
RN1911FE
RN2910FE,
RN2911FE
Toshiba xm
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Untitled
Abstract: No abstract text available
Text: RN1910FE,RN1911FE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN1910FE,RN1911FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6-pin)
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RN1910FE
RN1911FE
RN2910FE,
RN2911FE
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NSBC123TPDP6T5G
Abstract: NSBC144EPDP6T5G NSBC114EPDP6T5G NSBC114YPDP6T5G NSBC115TPDP6T5G NSBC124EPDP6T5G NSBC143EPDP6T5G 306 marking code transistor NSBC144WPDP6
Text: NSBC114EPDP6T5G Series Preferred Devices Dual Digital Transistors BRT Complementary Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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NSBC114EPDP6T5G
NSBC114EPDP6T5G
OT-963
NSBC114EPDP6/D
NSBC123TPDP6T5G
NSBC144EPDP6T5G
NSBC114YPDP6T5G
NSBC115TPDP6T5G
NSBC124EPDP6T5G
NSBC143EPDP6T5G
306 marking code transistor
NSBC144WPDP6
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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NSBC144WPDP6
Abstract: No abstract text available
Text: NSBC114EPDP6T5G Series Preferred Devices Dual Digital Transistors BRT Complementary Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base
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NSBC114EPDP6T5G
NSBC114EPDP6T5G
NSBC114EPDP6/D
NSBC144WPDP6
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RN1710JE
Abstract: RN1711JE RN2710JE
Text: RN1710JE,RN1711JE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1710JE, RN1711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit in mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin)
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RN1710JE
RN1711JE
RN1710JE,
RN2710JE
2711JE
RN1710JE
000707EAA2
RN1711JE
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Untitled
Abstract: No abstract text available
Text: RN1710JE,RN1711JE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1710JE,RN1711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Unit: mm Two devices are incorporated into an Extreme-Super-Mini (5 pin)
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RN1710JE
RN1711JE
RN2710JE
RN2711JE
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BU2508A
Abstract: BY228 BU2508
Text: Product specification Philips Semiconductors Silicon diffused power transistor BU2508A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to
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BU2508A
VcE148
7110fl2b
Q77S54
BU2508A
BY228
BU2508
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Toshiba xm
Abstract: No abstract text available
Text: RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110FT,RN1111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. Unit: mm • High-density mount is possible because of devices housed in very thin
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RN1110FT
RN1111FT
RN2110FT,
RN2111FT
Toshiba xm
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Untitled
Abstract: No abstract text available
Text: m 2N5943 \ \ NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 S V M DESCRIPTION: The 2N5943 is a High Frequency Transistor for General Purpose Amplifier Applications. DIMENSIONS ! MIN. MAX. MIN. MAX. 4>a 0.190 0.210 4.83 533 6.60 INCHES MILLIMETERS
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2N5943
2N5943
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RN1710JE
Abstract: RN1711JE RN2710JE RN2711JE
Text: RN1710JE,RN1711JE TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1710JE,RN1711JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Unit: mm Two devices are incorporated into an Extreme-Super-Mini (5 pin)
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RN1710JE
RN1711JE
RN2710JE
RN2711JE
RN1711JE
RN2711JE
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Untitled
Abstract: No abstract text available
Text: RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN1110FT,RN1111FT Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • High-density mount is possible because of devices housed in very thin
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RN1110FT
RN1111FT
RN2110FT,
RN2111FT
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