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    TRANSISTOR WM9 Search Results

    TRANSISTOR WM9 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR WM9 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON ¡m era « STHV102 STHV102FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STHV102 STHV102FI V dss RDS on Id 1000 V 1000 V < 3 .5 Q. < 3 .5 Q. 4.2 A 2.6 A • TYPICAL RDS(on) = 3.1 Q. . ■ . . . . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		STHV102 STHV102FI PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON ¡m era « STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP30N06 S TP30N06FI V dss RDS on Id 60 V 60 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		STP30N06 STP30N06FI TP30N06FI STP30N06/FI ISQWATT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: STP5N30 STP5N30FI V dss RDS on 300 V 300 V E D ED TYP E STP5N30 STP5N30FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR A A ¿57 SGS-THOMSON ¡m era « Id 5 A 3.5 A . TYPICAL RDs(on) = 1.2 Q . . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		STP5N30 STP5N30FI 30/FI ISQWATT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E STP30N05 S TP30N05FI SGS-THOMSON ¡m era « STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		STP30N05 TP30N05FI STP30N05FI STP30N05/FI ISQWATT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E STP20N 10L S TP20N10LFI SGS-THOMSON ¡m era « STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V dss RDS on Id 100 V 100 V < 0.12 a < 0.12 a 20 A 12 A • TYPICAL RDS(on) = 0.09 Q . . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		STP20N TP20N10LFI STP20N10L STP20N10LFI ISOWATT220 PDF

    15NA50

    Abstract: No abstract text available
    Text: ¿57 TYP E STH15NA50 STH15NA50FI STW 15NA50 S GS-THOMSON ¡[LiCTIiMOOS STH15NA50/FI STW15NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V dss RDS on Id 500 V 500 V 500 V < 0.4 a < 0.4 a < 0.4 Q. 14.6 A 9.3 A 14.6 A • TYPICAL RDS(on) = 0.33 Q.


    OCR Scan     		STH15NA50 STH15NA50FI 15NA50 STH15NA50/FI STW15NA50 15NA50 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON ¡m era « STP2N60 STP2N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP2N60 STP2N60FI V dss RDS on Id 600 V 600 V < 3 .5 Q. < 3 .5 Q. 2.9 A 2.2 A • TYPICAL RDS(on) = 3.2 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED


    OCR Scan     		STP2N60 STP2N60FI V60/FI ISQWATT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V MTP3N60 MTP3N60FI • . ■ . . SGS-THOMSON ¡m era « dss 600 V 600 V R DS on Id < 2.5 Q < 2.5 Q 3.9 A 2.5 A TYPICAL RDS(on) = 2 0 , AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED


    OCR Scan     		MTP3N60 MTP3N60FI MTP3N60/FI ISQWATT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E STP36N 05L S TP36N05LFI SGS-THOMSON STP36N06L STP36N06LFI ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 60 V 60 V < 0.04 a < 0.04 a 36 A 21 A . TYPICAL R DS(on) = 0.033 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		STP36N TP36N05LFI STP36N06L STP36N06LFI STP36N06L/FI ISQWATT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 STH6N100 STH6N100FI SGS-THOMSON ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V S TH 6N 100 S TH 6N 100FI dss 1000 V 1000 V R DS on Id <20 <20 6 A 3 .7 A . TYPICAL RDs(on) = 1.75 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		STH6N100 STH6N100FI 100FI PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON ¡UÈTO « STP6NA60 STP6NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STP6NA60 STP6NA60FI • . ■ . . . . V dss RDS on 600 V 600 V < 1 .2 Id a 6.5 A < 1 .2 0. 3 .9 A TYPICAL RDS(on) = 1 ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		STP6NA60 STP6NA60FI pSTP6NA60/FI ISQWATT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 SGS-THOMSON ¡UÈTO « STP7NA60 STP7NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E STP7NA60 STP7NA60FI V dss RDS on Id 600 V 600 V < 1a < 1a 7.2 A 4.4 A . TYPICAL R DS(on) = 0.92 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING • 100% AVALANCHE TESTED


    OCR Scan     		STP7NA60 STP7NA60FI ISQWATT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿ 5 S GS-THOMSON ¡[LiCTIiMOOS 7 STH10NA50/FI STW10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V STH10NA50 STH10NA50FI STW 10NA50 dss 500 V 500 V 500 V R DS on Id < 0.8 a < 0.8 a < 0.8 a 9.6 A 5.6 A 9.6 A • TYPICAL RDS(on) = 0.7 Q.


    OCR Scan     		STH10NA50/FI STW10NA50 STH10NA50 STH10NA50FI 10NA50 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E SGS-THOMSON ¡UÈTO « N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V STP5NA60 STP5NA60FI STP5NA60 STP5NA60FI dss 600 V 600 V R DS on Id < 1.6 a < 1.6 a 5.3 A 3.4 A • TYPICAL RDS(on) = 1 35 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		STP5NA60 STP5NA60FI STP5NA60/FI ISQWATT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E SGS-THOMSON ¡UÈTO « N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V dss STP5NA50 STP5NA50FI STP5NA50 STP5NA50FI 500 V 500 V RDS on Id a < 1 .6 a 5 A 3 A < 1 .6 . TYPICAL R Ds(on) = 1.2 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING • 100% AVALANCHE TESTED


    OCR Scan     		STP5NA50 STP5NA50FI STP5NA50/FI ISQWATT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E SGS-THOMSON ¡UÈTO « N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V dss STP7NA40 STP7NA40FI STP7NA40 STP7NA40FI 400 V 400 V RDS on a <a < 1 1 Id 6 .5 A 4.1 A . TYPICAL R DS(on) = 0.82 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING • 100% AVALANCHE TESTED


    OCR Scan     		STP7NA40 STP7NA40FI STP7NA40/FI ISQWATT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿ 5 SGS-THOMSON ¡UÈTO « 7 STP3NA50 STP3NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V STP3NA50 STP3NA50FI dss 500 V 500 V R DS on Id < 3 o <30 3.3 A 2.3 A . TYPICAL R DS(on) = 2.4 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING • 100% AVALANCHE TESTED


    OCR Scan     		STP3NA50 STP3NA50FI ISQWATT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E S TP3N A 60 STP3N A 60FI SGS-THOMSON ¡UÈTO « STP3NA60 STP3NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V dss RDS on 600 V 600 V < 4 0. < 4 a Id 2.9 A 2.1 A • TYPICAL RDS(on) = 3.3 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		STP3NA60 STP3NA60FI ISQWATT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E S TP32N 05L STP32N 05LFI STP32N05L STP32N05LFI S G S -T H O M S O N ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0 .055 Q. < 0 .055 Q. 32 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		TP32N STP32N 05LFI STP32N05L STP32N05LFI STP32N05L/FI ISQWATT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: S G S - T H O M ¿ 5 STP32N06L STP32N06LFI S O N ¡mera « 7 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E S TP32N 06L STP32N 06LFI V dss RDS on Id 60 V 60 V < 0 .055 Q. < 0 .055 Q. 32 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		STP32N06L STP32N06LFI TP32N STP32N 06LFI STP36N06L/FI ISQWATT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿ 5 SGS-THOMSON ¡mera « 7 STP10NA40 s t p i 0NA40FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E S TP10NA40 S TP10N A40FI V dss RDS on Id 400 V 400 V < 0.55 Q. < 0.55 Q. 10 A 6 A • TYPICAL RDS(on) = 0.46 Q. . ± 30V GATE TO SOURCE VOLTAGE RATING


    OCR Scan     		STP10NA40 0NA40FI TP10NA40 TP10N A40FI STP10NA40/FI ISQWATT220 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E S GS-THOMSON ¡[LiCTIiMOOS N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR V STH 12N A60 STH 12N A60FI STW 12N A60 STH12NA60/FI STW12NA60 dss 600 V 600 V 600 V R DS on Id < 0 .6 Q. < 0 .6 Q. < 0 .6 Q. 12 A 7 A 12 A . TYPICAL R DS(on) = 0.44 Q.


    OCR Scan     		A60FI STH12NA60/FI STW12NA60 PDF

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E STP36N 05L S TP36N05LFI STP36N05L STP36N05LFI S G S -T H O M S O N ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0.04 a < 0.04 a 36 A 21 A . TYPICAL R DS(on) = 0.033 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED


    OCR Scan     		STP36N TP36N05LFI STP36N05L STP36N05LFI STP36N05L/FI ISQWATT220 PDF

    wm9 transistor

    Abstract: GC2145
    Text: ¿57 S G S -T H O M S O N ¡m e ra « B U Z80 buzsofi N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E BUZ80 BUZ80FI V dss RDS on Id 800 V 800 V < 4 a < 4 0. 3.4 A 2 .1 A • TYPICAL RDS(on) = 3.3 Q. . ■ . . . . AVALANCHE RUGGEDNESS TECHNOLOGY


    OCR Scan     		BUZ80 BUZ80FI BUZ80/FI ISQWATT220 wm9 transistor GC2145 PDF