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    TRANSISTOR WE Search Results

    TRANSISTOR WE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR WE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Mitsubishi M54564

    Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
    Text: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide


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    A/20V 16P2Z 16pin 225mil 05MIN. 20pin 300mil 20P2N 20P2E Mitsubishi M54564 M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p PDF

    foto sensor

    Abstract: optical interrupter darlington gabellichtschranke datasheet ic 4060 Fototransistor Q62702-P5263
    Text: Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode • Si-Foto Darlington-Transistor mit Tageslichtsperrfilter • Hoher Koppelfaktor


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    GPXY6052 foto sensor optical interrupter darlington gabellichtschranke datasheet ic 4060 Fototransistor Q62702-P5263 PDF

    foto sensor

    Abstract: Fototransistor opto counter Opto Interrupter slotted 1/IRF 9330 gabellichtschranke Q62702-P5263 w 9330 opto sensor counter
    Text: Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode • Si-Foto Darlington-Transistor mit Tageslichtsperrfilter • Hoher Koppelfaktor


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    GPX06992 foto sensor Fototransistor opto counter Opto Interrupter slotted 1/IRF 9330 gabellichtschranke Q62702-P5263 w 9330 opto sensor counter PDF

    2SD2696

    Abstract: No abstract text available
    Text: 2SD2696 Transistors Low frequency transistor for amplification 2SD2696 zStructure NPN Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) 1.2 0.32 zFeatures 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size.


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    2SD2696 400mA 300mA 100mA 2SD2696 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMD General Purpose Transistor NPN MMBT3904 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: SOT-23 Solderable per MIL-STD-202G, Method 208


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    MMBT3904 OT-23, OT-23 MIL-STD-202G, PDF

    TRANSISTOR SMD MARKING CODE 1P

    Abstract: 1P smd transistor F318 transistor smd marking NA sot-23
    Text: SMD GENERAL PURPOSE TRANSISTOR NPN MMBT2222A SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: SOT-23 Solderable per MIL-STD-202G, Method 208


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    MMBT2222A OT-23, OT-23 MIL-STD-202G, TRANSISTOR SMD MARKING CODE 1P 1P smd transistor F318 transistor smd marking NA sot-23 PDF

    TRANSISTOR C 2026

    Abstract: 2SB817E 2SB817e equivalent AH TRANSISTOR transistor PNP how to test transistor transistor 1503 mexico transistor power 2sb817
    Text: Power Transistor PNP 2SB817E Power Transistor (PNP) Features • 2SB817E transistor is designed for use in general purpose power amplifier, application TO-3P Mechanical Data Case: TO-3P, Plastic Package Terminals: Weight: Plated leads solderable per MIL-STD-750, Method 2026


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    2SB817E 2SB817E MIL-STD-750, TRANSISTOR C 2026 2SB817e equivalent AH TRANSISTOR transistor PNP how to test transistor transistor 1503 mexico transistor power 2sb817 PDF

    smd TRANSISTOR code marking 2F

    Abstract: transistor pnp 20v, 2.5a smd
    Text: SMD GENERAL PURPOSE TRANSISTOR PNP MMBT2907A SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: SOT-23 Solderable per MIL-STD-202G, Method 208


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    MMBT2907A OT-23, OT-23 MIL-STD-202G, smd TRANSISTOR code marking 2F transistor pnp 20v, 2.5a smd PDF

    smd transistor 1g

    Abstract: smd TRANSISTOR AH 2 smd transistor 24 sot23
    Text: SMD General Purpose Transistor NPN MMBTA06 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: SOT-23 Solderable per MIL-STD-202G, Method 208


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    MMBTA06 OT-23, OT-23 MIL-STD-202G, smd transistor 1g smd TRANSISTOR AH 2 smd transistor 24 sot23 PDF

    vmt3

    Abstract: No abstract text available
    Text: Low frequency transistor for amplification 2SD2696 zStructure NPN Silicon Epitaxial Planar Transistor zDimensions (Unit : mm) zFeatures 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size. 2) Collector saturation voltage is low.


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    2SD2696 400mA 300mA 100mA 2SD2696 R0039A vmt3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Low frequency transistor for amplification 2SD2696 Structure NPN Silicon Epitaxial Planar Transistor Dimensions (Unit : mm) Features 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size. 2) Collector saturation voltage is low.


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    2SD2696 400mA 300mA 100mA R0039A PDF

    2SA2160

    Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
    Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series


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    O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027 PDF

    TRANSISTOR SMD MARKING CODE 2x

    Abstract: smd transistor 2x TRANSISTOR SMD 2x t SMD transistor 2x sot 23 TRANSISTOR SMD 2X K TRANSISTOR SMD 2X TRANSISTOR SMD fr 2x smd transistor TRANSISTOR SMD MARKING CODE 16 smd transistor marking 26
    Text: SMD General Purpose Transistor NPN MMBT4401 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: SOT-23 Solderable per MIL-STD-202G, Method 208


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    MMBT4401 OT-23, OT-23 MIL-STD-202G, TRANSISTOR SMD MARKING CODE 2x smd transistor 2x TRANSISTOR SMD 2x t SMD transistor 2x sot 23 TRANSISTOR SMD 2X K TRANSISTOR SMD 2X TRANSISTOR SMD fr 2x smd transistor TRANSISTOR SMD MARKING CODE 16 smd transistor marking 26 PDF

    2SD2696

    Abstract: No abstract text available
    Text: Low frequency transistor for amplification 2SD2696 zDimensions (Unit : mm) zStructure NPN Silicon Epitaxial Planar Transistor zFeatures 1) The transistor of 400mA class which went only with 2012 size conventionally is attained in 1208 size. 2) Collector saturation voltage is low.


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    2SD2696 400mA 300mA 100mA R0039A 2SD2696 PDF

    Untitled

    Abstract: No abstract text available
    Text: SMALL SIGNAL HIGH VOLTAGE TRANSISTOR NPN 2N5551 Small Signal High Voltage Transistor (NPN) Features • High Voltage NPN Transistor for General Purpose and Telephony Applications Mechanical Data Case: TO-92, Plastic Package Terminals: Weight: TO-92 Solderable per MIL-STD-202G, Method 208


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    2N5551 MIL-STD-202G, PDF

    PUMF12

    Abstract: MCE153
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor Product data sheet 2002 Nov 07 NXP Semiconductors Product data sheet PNP general purpose transistor; NPN resistor-equipped transistor


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    MBD128 PUMF12 OT363 OT323 SC-70) 613514/01/pp7 PUMF12 MCE153 PDF

    PUMF11

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage MBD128 PUMF11 NPN resistor-equipped transistor; PNP general purpose transistor Product data sheet 2002 Apr 09 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; PNP general purpose transistor


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    MBD128 PUMF11 OT363 OT323 SC-70) 613514/01/pp7 PUMF11 PDF

    PUMF12

    Abstract: 10311 PNP TRANSISTOR SOT363
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 PUMF12 PNP general purpose transistor; NPN resistor-equipped transistor Product data sheet 2002 Nov 07 NXP Semiconductors Product data sheet PNP general purpose transistor; NPN resistor-equipped transistor


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    MBD128 PUMF12 OT363 OT323 SC-70) 613514/01/pp7 PUMF12 10311 PNP TRANSISTOR SOT363 PDF

    PNP TRANSISTOR SOT363

    Abstract: PUMF11
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage MBD128 PUMF11 NPN resistor-equipped transistor; PNP general purpose transistor Product data sheet 2002 Apr 09 NXP Semiconductors Product data sheet NPN resistor-equipped transistor; PNP general purpose transistor


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    MBD128 PUMF11 OT363 OT323 SC-70) 613514/01/pp7 PNP TRANSISTOR SOT363 PUMF11 PDF

    transistor sc 308

    Abstract: DTA143EE SMD310
    Text: DTA143EE Product Preview Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


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    DTA143EE DTA143EE 416/SC r14525 DTA143EE/D transistor sc 308 SMD310 PDF

    transistor sc 308

    Abstract: DTC114TE SMD310
    Text: DTC114TE Product Preview Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


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    DTC114TE DTC114TE 416/SC r14525 DTC114TE/D transistor sc 308 SMD310 PDF

    BSY59

    Abstract: TRANSISTOR W 59
    Text: BSY59 Not for new developm ent PNP Transistor for switching applications The transistor B S Y 59 is an epitaxial silicon planar PNP transistor in a plastic case 11 A 3 DIN 41869 SO T-25 . The transistor is especially designed for use as switch of medium speed as well as for universal application.


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    BSY59 BSY59 -S157 TRANSISTOR W 59 PDF

    4 channel triac opto

    Abstract: transistor transistor AC Switch OPTO- DARLINGTON dual channel opto triac ac opto triac Photo Relays DIP SWITCH 10 PIN photo transistor zero voltage AC 8 PIN
    Text: Contents INDEX OPTO ISOLATORS Photo Transistor 4 & 6 pin DIP FET Couplers High Collector / Emitter Voltage 8 pin SOIC Photo Transistor In Line Packages (4,8,16 pin DIP) Dual Channel Photo Transistor Quad Channel Photo Transistor 4 Photo Transistor Detector


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    PDF

    BUX45

    Abstract: transistor et 460
    Text: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection


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    CB-19 BUX45 transistor et 460 PDF