MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
|
Original
|
|
PDF
|
oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
|
Original
|
KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
|
PDF
|
la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
|
OCR Scan
|
AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Power Bipolar Transistors „ Transistor Safe _Operating Area SOAR TRANSISTOR SAFE OPERATING AREA (SOAR) Average junction temperature There are two main limiting factors which affect the power handling ability of a transistor; the average
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: / = 7 SGS-THOM SOil BUTW92 HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR APPLICATIONS: . MOTOR CONTROL . HIGH FREQUENCY AND EFFICIENCY CONVERTERS DESCRIPTION High current, high speed transistor suited for power conversion applications, high efficency
|
OCR Scan
|
BUTW92
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NXP 1.4 to 1.7 GHz RF power transistor BLF7G15LS-200 RF power transistor for leading performance in 1.5 GHz LTE basestations Optimized for 1.5 GHz LTE/W-CDMA applications and built in rugged Gen7 LDMOS, this 28 V ceramic transistor delivers best-in-class efficiency in a symmetrical Doherty configuration.
|
Original
|
BLF7G15LS-200
BLF7G15LS
|
PDF
|
sot467b
Abstract: No abstract text available
Text: BLF6H10L-160; BLF6H10LS-160 Power LDMOS transistor Rev. 2 — 12 December 2012 Product data sheet 1. Product profile 1.1 General description A 160 W LDMOS RF power transistor for base station applications. The transistor can deliver 160 W from 729 MHz to 960 MHz. The excellent ruggedness and broadband
|
Original
|
BLF6H10L-160;
BLF6H10LS-160
BLF6H10L-160
6H10LS-160
sot467b
|
PDF
|
sot467bpo
Abstract: No abstract text available
Text: BLF6H10L-160; BLF6H10LS-160 Power LDMOS transistor Rev. 1 — 10 February 2012 Objective data sheet 1. Product profile 1.1 General description A 160 W LDMOS RF power transistor for base station applications. The transistor can deliver 160 W from HF to 1 GHz. The excellent ruggedness and broadband performance
|
Original
|
BLF6H10L-160;
BLF6H10LS-160
BLF6H10L-160
6H10LS-160
sot467bpo
|
PDF
|
BUK555-100A
Abstract: wdss-100
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK555-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
|
OCR Scan
|
BUK555-100A/B
BUK555
-100A
-100B
BUK555-100A/B
BUK555-100A
wdss-100
|
PDF
|
kd smd transistor
Abstract: smd transistor wc LG Philips LM 300 W 01
Text: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level Insulated gate bipolar power transistor In a plastic envelope
|
OCR Scan
|
BUK866-400
kd smd transistor
smd transistor wc
LG Philips LM 300 W 01
|
PDF
|
rjh3047
Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing
|
Original
|
REJ01G0001-0400
rjh3047
rjh3077
rjp3047
RJH3047DPK
rjp3049
rjp6065
rjp3053
RJP3042
smd code FX mosfet
RJP6055
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Insulated Gate Bipolar Transistor BUK866-400 IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope
|
OCR Scan
|
BUK866-400
|
PDF
|
NT 407 F TRANSISTOR TO 220
Abstract: NT 407 F TRANSISTOR BFT92 m1b marking 3358 transistor "MARKING CODE W1*" marking code 10 sot23 BFT92W transistor Bft92 NT 407 F power transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFT92W PNP 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors May 1994 Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT92W FEATURES
|
Original
|
BFT92W
OT323
BFT92W
BFT92.
MBC870
SCD31
123065/1500/01/pp12
NT 407 F TRANSISTOR TO 220
NT 407 F TRANSISTOR
BFT92
m1b marking
3358 transistor
"MARKING CODE W1*"
marking code 10 sot23
transistor Bft92
NT 407 F power transistor
|
PDF
|
2sa 940
Abstract: 2SC2530 transistor 2SA 374 fujitsu RET transistors 2sa fujitsu
Text: FUJITSU MICROELECTRONICS m 3 7 4 ^ 5 0Dlb5Sb 2 BBFMI 31E D FUJITSU January 1990 Edition 1.1 PRODUCT P R O FILE' 2SC2530 Silicon High Speed Power Transistor DESCRIPTION The 2SC 253 0 is a silicon NPN M.C.-Head amplifier use transistor fabricated with Fujttus's unique Ring Em itter Transistor R E T technology. R ET devices are
|
OCR Scan
|
2SC2530
35MHz
2sa 940
transistor 2SA 374
fujitsu RET transistors
2sa fujitsu
|
PDF
|
|
|
BLF2022-40
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D750 BLF2022-40 UHF power LDMOS transistor Preliminary specification 2001 April 05 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2022-40 PINNING FEATURES • High power gain PIN DESCRIPTION
|
Original
|
M3D750
BLF2022-40
125002/02/pp6
BLF2022-40
BP317
|
PDF
|
Capacitor Tantal SMD
Abstract: BLF2022-30 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D750 BLF2022-30 UHF power LDMOS transistor Preliminary specification 2001 Aug 07 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2022-30 PINNING FEATURES • High power gain PIN DESCRIPTION
|
Original
|
M3D750
BLF2022-30
125002/02/pp10
Capacitor Tantal SMD
BLF2022-30
BP317
|
PDF
|
BLF2022-70
Abstract: BLF2047 ACPR10
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Preliminary specification 2000 Sep 21 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2022-70 PINNING FEATURES • High power gain
|
Original
|
M3D379
BLF2022-70
125002/04/pp10
BLF2022-70
BLF2047
ACPR10
|
PDF
|
TRANSISTOR D 471
Abstract: hotel BLF2022-90 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-90 UHF power LDMOS transistor Preliminary specification 2001 Mar 22 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF2022-90 PINNING FEATURES • High power gain
|
Original
|
M3D379
BLF2022-90
125002/04/pp6
TRANSISTOR D 471
hotel
BLF2022-90
BP317
|
PDF
|
TP3040
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in automotive applications, Switched Mode Power Supplies SMPS ,
|
OCR Scan
|
BUK454-60H
T0220AB
TP3040
|
PDF
|
BLF1820-40
Abstract: BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D750 BLF1820-40 UHF power LDMOS transistor Preliminary specification 2001 Aug 10 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1820-40 PINNING FEATURES • High power gain PIN DESCRIPTION
|
Original
|
M3D750
BLF1820-40
125002/02/pp9
BLF1820-40
BP317
|
PDF
|
SV160
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ‘trench’ technology
|
OCR Scan
|
BUK9618-55
gat140
-ID/100
SV160
|
PDF
|
BUX12
Abstract: sonde type k Emetteur pbgi mfb2 bux THOMSON k50 transistor thomson transistor de puissance rf
Text: *B UX12 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED MESA T R A N S IS T O R S IL IC IU M NPN, M ESA T R IP L E D IF F U S E ^ P r e fe rr e d device Dispositif recommandé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension
|
OCR Scan
|
BUX12
CB-19
BUX12
sonde type k
Emetteur
pbgi
mfb2
bux THOMSON
k50 transistor
thomson transistor de puissance rf
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b 'lE ]> bb53^31 □ D 2 f i ci m IAPX TTD BLV21 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran
|
OCR Scan
|
BLV21
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MQTORCLA SC XSTRS/R 1EE F D I b3b72S4 GDÒSQMS d | MOTOROLA SEMICONDUCTOR MJ10014 TECHNICAL DATA D e s i g n e r s Data. S h e e t 10 A M P E R E SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTOR NPN SILICON POWER DARLINGTON TRANSISTOR The MJ10014 Darlington transistor is designed for high-voltage,
|
OCR Scan
|
b3b72S4
MJ10014
MJ10014
|
PDF
|
