Untitled
Abstract: No abstract text available
Text: CMPT591E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP silicon transistor. This device is manufactured by the
|
Original
|
PDF
|
CMPT591E
CMPT591E
OT-23
CMPT491E
500mA
100MHz
27-January
|
igbt module bsm 200
Abstract: GB60 igbt module bsm 300 eupec igbt BSM 100 gb
Text: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 200 GB 60 DLC Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,17 K/W - - 0,29 K/W Innerer Wärmewiderstand thermal resistance, junction to case Transistor / transistor, DC
|
Original
|
PDF
|
|
CMPT491E
Abstract: CMPT591E
Text: CMPT591E ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR SOT-23 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT591E type is an Enhanced version of the industry standard 591 PNP silicon transistor. This device is manufactured by the
|
Original
|
PDF
|
CMPT591E
OT-23
CMPT591E
CMPT491E
500mA
100MHz
27-January
CMPT491E
|
J307 FET
Abstract: AGR19180EF JESD22-A114 agere c8
Text: Preliminary Data Sheet March 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
|
Original
|
PDF
|
AGR19180EF
Hz--1990
AGR19180EF
DS04-080RFPP
DS02-377RFPP)
J307 FET
JESD22-A114
agere c8
|
J307 FET
Abstract: AGR19180EF JESD22-A114 c38 transistor j526 j451 J386
Text: Preliminary Data Sheet April 2004 AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
|
Original
|
PDF
|
AGR19180EF
Hz--1990
AGR19180EF
DS04-162RFPP
DS04-080RFPP)
J307 FET
JESD22-A114
c38 transistor
j526
j451
J386
|
AGR19180EF
Abstract: JESD22-A114 Z111A
Text: AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—
|
Original
|
PDF
|
AGR19180EF
Hz--1990
AGR19180EF
JESD22-A114
Z111A
|
J307 FET
Abstract: J307 transistor c35 equivalent IM335
Text: Preliminary Data Sheet July 2003 AGR19180E 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19180E is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for
|
Original
|
PDF
|
AGR19180E
Hz--1990
AGR19180EU
AGR19180EF
Voltag48,
DS02-377RFPP
J307 FET
J307
transistor c35 equivalent
IM335
|
Untitled
Abstract: No abstract text available
Text: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent
|
Original
|
PDF
|
BLF642
|
C570X7R1H106KT000N
Abstract: 771-BLF642112 SOT467 Technical Specifications of DVB-T2 Transmitter DVB-T2 blf642,112 blf642 C570x
Text: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent
|
Original
|
PDF
|
BLF642
771-BLF642112
BLF642
C570X7R1H106KT000N
SOT467
Technical Specifications of DVB-T2 Transmitter
DVB-T2
blf642,112
C570x
|
blf642
Abstract: rogers 5880
Text: BLF642 Broadband power LDMOS transistor Rev. 2 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description A 35 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1400 MHz. The excellent
|
Original
|
PDF
|
BLF642
blf642
rogers 5880
|
GT45F122
Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor
|
Original
|
PDF
|
BCE0010D
S-167
BCE0010E
GT45F122
gt30g122
gt30f122
gt45f123
GT45f122 Series
gt35j321
GT45G122
gt60n323
*45F122
GT45F124
|
transistor c36
Abstract: wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134
Text: =5= ,-= E -= EF an AMP company * ,- .-z = Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty PH3134-11s 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry
|
Original
|
PDF
|
PH3134-11s
MJLLIMET1344)
transistor c36
wacom
wacom connector
transistor j8
f 9234
transistor B 325
PH3134
|
Untitled
Abstract: No abstract text available
Text: BLF6G15L-40BRN Power LDMOS transistor Rev. 2 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance
|
Original
|
PDF
|
BLF6G15L-40BRN
|
C5750X7R1H106M
Abstract: C3225X7R1H155M RF35 SM270 TRANSISTOR 751
Text: BLF6G20LS-75 Power LDMOS transistor Rev. 01 — 18 February 2008 Preliminary data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
|
Original
|
PDF
|
BLF6G20LS-75
ACPR400k
ACPR600k
BLF6G20LS-75
C5750X7R1H106M
C3225X7R1H155M
RF35
SM270
TRANSISTOR 751
|
|
equivalent transistor TT 3034
Abstract: transistor TT 3034 A771 TRANSISTOR transistor b722 124e transistor Transistor b865 tc 144e DTC1132 B718 TRANSISTOR 124E
Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEATURES; w w w . Datasheet. i n • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded
|
OCR Scan
|
PDF
|
|
RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
|
OCR Scan
|
PDF
|
|
BLW84
Abstract: transistor tt 2222 C 829 transistor TT 2222 npn TT 2222 SOT123 C 828 Transistor transistor L6
Text: N AMER PHILIPS/DISCRETE bTE D • bbS3S31 002^441 Sfl3 IAPX BLW84 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is guaranteed to w ith
|
OCR Scan
|
PDF
|
bbS3S31
BLW84
59-j54
OT-123.
7Z77529
7Z77S30
BLW84
transistor tt 2222
C 829 transistor
TT 2222 npn
TT 2222
SOT123
C 828 Transistor
transistor L6
|
MPS6560
Abstract: audio transistor
Text: SAMSUNG SEMICONDUCTOR INC D MPS6560 J 7Tbm4£ 000732^ 5 NPN EPITAXIAL SILICON TRANSISTOR AUDIO TRANSISTOR • Collector-Emitter Voltage: V CEo = 2 5 V • Collector Dissipation: P c m ax =625m W ABSOLUTE MAXIMUM J W IN G S (Ta=25°C) Characteristic Collector-Base Vbltage
|
OCR Scan
|
PDF
|
MPS6560
625mW
T-29-21
100piA,
100mA,
500mA,
30MHz
100KHz
audio transistor
|
2SC4867
Abstract: 16T MARKING 2SC4871 FH201 ZS21 TA-1315 1hz OUTPUT 7CJE
Text: Ordering number:ENN6117 NPN Epitaxial Planar Silicon Composite Transistor FH201 SAÈÈYOI VCO OSC Circuit Applications Features Package Dimensions • C om p osite type w ith a buffer transistor 2 S C 4 8 7 1 and a oscillator transistor (2 S C 4 8 6 7 ) contained in
|
OCR Scan
|
PDF
|
ENN6117
FH201
2SC4871)
2SC4867)
FH20I
2SC4871
2SC4867,
FH201]
7117D7L
0D544b7
2SC4867
16T MARKING
FH201
ZS21
TA-1315
1hz OUTPUT
7CJE
|
AT415
Abstract: No abstract text available
Text: W h pt H E W L E T T mL/im P A C K A R D General Purpose, Low Noise NPN Silicon Bipolar Transistor Technical Data AT-41511, A T-41533 F eatu res D escrip tion • General Purpose NPN Bipolar Transistor • 900 MHz Performance: AT-41511: 1 dB NF, 15.5 dB Ga
|
OCR Scan
|
PDF
|
AT-41511,
T-41533
AT-41511:
AT-41533:
OT-23
OT-143
AT-41511
AT-41533
OT-23,
AT415
|
transistor smd 1FT
Abstract: AT12L
Text: W h a lH E W L E T T $ mLKM PACKARD Hermetically Sealed, Transistor Output Optocouplers for Analog and Digital Applications 4N55* 5962-87679 HCPL-553X HCPL-653X Technical Data HCPL-655X 5962-90854 HCPL-550X ‘ See matrix for available extensions. Features
|
OCR Scan
|
PDF
|
HCPL-553X
HCPL-653X
HCPL-655X
HCPL-550X
MIL-PRF-38534
QML-38534,
6N135D
MIL-PRF-38534.
5964-3910E
transistor smd 1FT
AT12L
|
transistor D 5032
Abstract: 5032 transistor philips FP 9600 2222 372 d 5032 transistor APX 2600 TRANSISTOR PHL 0284 2222 379 2322 731 D0246
Text: bbS 3 q 31 Philips Semiconductors ODEMflga 335 W A P X Product specification NPN 4 GHz wideband transistor M ANER DESCRIPTION ^ PHILIPS/DISCRETE L7E BFG35 D _ PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. Intended for wideband
|
OCR Scan
|
PDF
|
bbS3q31
BFG35
OT223
BFG55.
500MHz
transistor D 5032
5032 transistor
philips FP 9600
2222 372
d 5032 transistor
APX 2600
TRANSISTOR PHL 0284
2222 379
2322 731
D0246
|
5C transistor
Abstract: transistor 5c 5C-32 nato 5C-23 5C-24 5C-33 1MAA00237AAP 30CW C32C
Text: Obtflobs. 5C Series Chassis Mounted T05 .W1^6 v w w w VW VW A range of finned heatsinks with hollow clamp screw to trap the transistor flange against dissipation seating. e = 30°C/W Body finish: Black anodised. Type Clamp Screw 5C 5C-20 Plastic Metal 5C-23
|
OCR Scan
|
PDF
|
5C-23
5C-24
5C-32
5C-33
1MAA00237AAP
5C transistor
transistor 5c
nato
1MAA00237AAP
30CW
C32C
|
C459
Abstract: 2N1613 1613 14 AMB-45
Text: Nicht für Neuentwicklungen Not for new developm ents 2 N 1613 'W Silizium-NPN-Planar-Transistor Silicon NPN Planar Transistor Anwendungen: HF-Verstärker und schnelle Schalter Applications: RF am plifiers and high speed switches Besondere Merkmale: • Hohe Sperrspannung
|
OCR Scan
|
PDF
|
|