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    TRANSISTOR W 431 Search Results

    TRANSISTOR W 431 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR W 431 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor w 431

    Abstract: TRANSISTOR BC 431 TRANSISTOR 431 transistor 431 c 431 transistor a 431 transistor y 431 transistor transistor bc 488 bc 106 transistor w 431 transistor
    Text: BC 431 'W Silizium-NPN-Epitaxial-Planar-NF-Transistor Silicon NPN Epitaxial Planar AF Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: • Hohe Sperrspannung Features: • High reverse voltage • Verlustleistung 6:25 mW


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    TFK u 116

    Abstract: TFK 236 TRANSISTOR BC 119 transistor BC 236 6tfk BC431 CES10116 tfk 106 BC432 6 TFK 106
    Text: Silizium-PNP-Epitaxial-Planar-NF-Transistor Silicon PNP Epitaxial Planar A F Transistor Anwendungen: Treiber und Endstufen Applications: Driver and po w e r stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage • Verlustleistung 625 mW


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    transistor tt 2222

    Abstract: BLV20 TT 2222 RF POWER TRANSISTOR NPN vhf j0718 2222 123 capacitor philips ic TT 2222
    Text: PHILIPS INTERNATIONAL b5E J> m 711Gö5b CIQb2ü30 O^ä BLV20 V.H.F. PO W ER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­


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    BLV20 OT-123. 711002b 7z68947 7z68946 7z68948 transistor tt 2222 BLV20 TT 2222 RF POWER TRANSISTOR NPN vhf j0718 2222 123 capacitor philips ic TT 2222 PDF

    MRF325

    Abstract: BH rn transistor
    Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MRF325 T h e R F L in e 30 W - 225-400 MHz CONTROLLED "Q " BROADBAND RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR . . . designed p rim a rily fo r w ideband large-signal o u tp u t and d riv e r NPN SILICON


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    MRF325 MRF325 BH rn transistor PDF

    BLV97

    Abstract: D-10 ferroxcube wideband hf choke
    Text: N AMER PH I L I P S / D I S C R E T E - " • w vu ObE D w I ■ w b t,S3 T 3 1 D1 3 L 2 fi •9 N O R T H / A M P E R E X / D I S C R ETE DLE D BLV97 'TZ33~J U.H.F. P O W E R TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-171 envelope intended fo r use in class-B operated base


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    0013L2fl BLV97 OT-171 BLV97 D-10 ferroxcube wideband hf choke PDF

    Philips film capacitors 27 pf

    Abstract: trimmer 3-30 pf TL 2222 BLW60C Philips film capacitors polystyrene b32s philips carbon film resistor z670
    Text: bSE D • TllOôBb Gabassi 214 « P H I N BLW60C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 12,5 V. The transistor is resistance stabilized


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    BLW60C 00b35b2 7Z772S6 7Z77255 Philips film capacitors 27 pf trimmer 3-30 pf TL 2222 BLW60C Philips film capacitors polystyrene b32s philips carbon film resistor z670 PDF

    transistor 131 8D

    Abstract: transistor k 3728 QBE+61.2+dp2
    Text: N AMER PHILIPS/DISCRETE 86D OLE D T' 01928 ^53=131 DDimbt. 5 BLY90 A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran­


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    BLY90 transistor 131 8D transistor k 3728 QBE+61.2+dp2 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE ^1=53^31 DD3T433 E7D BLW83 fc.RE D IAPX l H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear


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    DD3T433 BLW83 PDF

    BLY92C

    Abstract: mfc capacitor philips
    Text: bSE J> • PHILIPS INTERNATIONAL 7110fiEb DObabST 4T1 HIPHIN BLY92C . y v. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is guaran­


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    711iOÃ BLY92C OT-120. 7Z68949 BLY92C mfc capacitor philips PDF

    blw86

    Abstract: ferroxcube wideband hf choke BY206
    Text: m b5E » 711002b 0Db33Sû SST « P H I N BLW86 _PHILIPS INTERNATIONAL_ j H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is


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    711002b. 0Db33SÃ BLW86 blw86 ferroxcube wideband hf choke BY206 PDF

    typ71

    Abstract: 71ti 71ti philips BLY91C RF POWER TRANSISTOR NPN vhf Transistor 5331
    Text: N AMER PHILIPS/DISCRETE bSE D WË bbSSTSl □□21714 TTfl • APX BLY91C A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­


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    BLY91C 18-j20 OT-120. 7Z68946 7Z68948 typ71 71ti 71ti philips BLY91C RF POWER TRANSISTOR NPN vhf Transistor 5331 PDF

    43120203664

    Abstract: BLW83 PHILIPS 4312 amplifier 431202036640 choke BY206 philips carbon film resistor
    Text: bSE V m 7110&Eb □□b332*ì 75^ BiPHIN BLW83 _PHILIPS INTERNATIONAL_ ^ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transm itting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V. The transistor is specified fo r s.s.b. applications as linear


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    BLW83 711002b 00b3337 BLW83 43120203664 PHILIPS 4312 amplifier 431202036640 choke BY206 philips carbon film resistor PDF

    4312 020 36640

    Abstract: ferroxcube wideband hf choke
    Text: N AMER PHILIPS/DISCRETE bbS3T31 0 0 2 W 0 SS3 I IAPX BLX39 b^E 3> H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is


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    bbS3T31 BLX39 juF/10 /zF/35 4312 020 36640 ferroxcube wideband hf choke PDF

    IC SEM 2105

    Abstract: common emitter transistors
    Text: What H E W L E T T * miltm PACKARD Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Performance Bipolar Transistor Optimized for Low Current, Low Voltage Operation • 900 MHz Performance:


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    AT-30511 AT-30533 AT-30533 OT-23 OT-143 sAT-30511 OT-23, IC SEM 2105 common emitter transistors PDF

    LA 7693

    Abstract: ic CD 4047 7737 transistor
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain


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    2SC5014 2SC5014-T1 2SC5014-T2 LA 7693 ic CD 4047 7737 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: OLE D • bfc.53^31 001420b £ D 'T ~ 3 '3 ~ " N AMER PHILIPS/DISCRETE 86D 01968 BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran­


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    001420b BLY93A r3774 PDF

    transistor NEC B 617

    Abstract: nec 2035 744 zo 607 p 408 7749 transistor 2sc5010 ic 151 811 transistor 3568
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5010 is an NPN epitaxial silicon transistor designed for use in low noise and small signal am plifiers from VHF band to L band. Low noise figure, high gain, and high current capability achieve a very w ide dynam ic range and


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    2SC5010 2SC5010 transistor NEC B 617 nec 2035 744 zo 607 p 408 7749 transistor ic 151 811 transistor 3568 PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE 860 ObE » • bbS3^31 0013^22 1 D 01684 BLX13 V H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended fo r s.s.b. in class-A and AB and in f.m . transm itting appli­ cations in class-C w ith a supply voltage up to 28 V, The transistor is resistance stabilized and tested


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    BLX13 147nH 118nH bbS3T31 PDF

    SOT122A

    Abstract: 7Z78437
    Text: hSE 711DÖ2L □Qb3571 ÖSS BiPHIN T> PHILIPS BLY87C/01 IN TER NA TIO NA L V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilita ry transmitters w ith a supply voltage o f 13,5 V. The transistor is resistance stabilized and is guaranteed to


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    Qb3571 BLY87C/01 SOT122A 7Z78437 PDF

    BLV21

    Abstract: transistor L6 Sss-5 2222 123 capacitor philips B20-4
    Text: PHILIPS INTERNATIONAL bSE ]> m 7110fl2b 0GbSfl3ñ 3ÔT « P H I N BLV21 Jl V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in cfass-A, B and C operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V . The transistor is resistance stabilized and is guaran­


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    711002b BLV21 OT-123. 7Z68949 BLV21 transistor L6 Sss-5 2222 123 capacitor philips B20-4 PDF

    HF 331 transistor

    Abstract: No abstract text available
    Text: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


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    BLY92A HF 331 transistor PDF

    carbon resistors

    Abstract: BLX13 BLX13C philips carbon film resistor carbon resistor RF amplifiers in the HF and VHF A1E transistor Philips Carbon Resistor
    Text: N AMER PHILIPS/DISCRETE b^E ]> bb53*i31 □ DS*ìSS2 T4T A E3LX13U H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transm itting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V. The transistor is specified fo r s.s.b. applications as linear


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    e3lx13u 7Z77838 BLX13U BLX13C carbon resistors BLX13 philips carbon film resistor carbon resistor RF amplifiers in the HF and VHF A1E transistor Philips Carbon Resistor PDF

    transistor d 1991 ar

    Abstract: BLY87 BLY87C
    Text: b lE N AMER PHILIPS/DISCRETE ^53^31 D GOSTb? 4 S'il • APX BLY87C/01 I V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilitary transmitters w ith a supply voltage o f 13,5 V, The transistor is resistance stabilized and is guaranteed to


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    BLY87C/01 transistor d 1991 ar BLY87 BLY87C PDF

    BLY88A

    Abstract: A41E BLY88 W1032 Paver Components
    Text: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D • TllGÔSb DQSTRS? 1 « P H IN II BLY88A A T - 3 3 - 0 1 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V. The transistor is resistance stabilized and is


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    DQ57R27 BLY88A to-16 BLY88A A41E BLY88 W1032 Paver Components PDF