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    TRANSISTOR VS20 Search Results

    TRANSISTOR VS20 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR VS20 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ULN2003 RELAY DRIVER

    Abstract: No abstract text available
    Text: ULN2003 LINEAR INTEGRATED CIRCUIT HIGH VOLTAGE AND HIGH CURRENT DARLINGTON TRANSISTOR ARRAY DESCRIPTION The ULN2003 is a monolithic high voltage and high current Darlington transistor arrays. It consists of seven NPN darlington pairs that features high-voltage outputs with common-cathode


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    PDF ULN2003 ULN2003 500mA. DIP-16 ULN2003 RELAY DRIVER

    CGH55015F2

    Abstract: CGH5501 smd transistor s2p CGH55015P2 CGH55015-TB cgh55 hemt .s2p RO4350B max torque CGH55015 CGH55015F
    Text: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/


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    PDF CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 CGH5501 smd transistor s2p CGH55015-TB cgh55 hemt .s2p RO4350B max torque CGH55015 CGH55015F

    CGH55015F2

    Abstract: transistor 9014 smd 9014 SMD CGH40010 CGH5501 CGH55015 CGH55015F CGH55015P2 CGH55015-TB
    Text: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/


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    PDF CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 transistor 9014 smd 9014 SMD CGH40010 CGH5501 CGH55015 CGH55015F CGH55015-TB

    transistor 15478

    Abstract: TRANSISTOR SMD 9014 transistor 9014 smd CGH55015F2 data sheet transistor 9014
    Text: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/


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    PDF CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 transistor 15478 TRANSISTOR SMD 9014 transistor 9014 smd data sheet transistor 9014

    TRANSISTOR SMD 9014

    Abstract: CGH40010F transistor 9014 smd 9014 transistor smd CGH55015F2 CGH5501 CGH55015 CGH55015F CGH55015P2 CGH55015-TB
    Text: CGH55015F2 / CGH55015P2 10 W, C-band, Unmatched, GaN HEMT Cree’s CGH55015F2/CGH55015P2 is a gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH55015F2/


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    PDF CGH55015F2 CGH55015P2 CGH55015F2/CGH55015P2 CGH55015F2/ CGH55015P2 CGH5501 CGH55 015F2 TRANSISTOR SMD 9014 CGH40010F transistor 9014 smd 9014 transistor smd CGH5501 CGH55015 CGH55015F CGH55015-TB

    ULN2003A application

    Abstract: uln2003a ULN2002A
    Text: ULN2002A/ ULN2003A/ ULN2004A HIGH VOLTAGE, HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS Description Pin Assignments The ULN2002A ,ULN2003A and ULN2004A are high voltage, high current Darlington arrays each containing seven open collector ADVANCE INFORMATION common emitter pairs. Each pair is rated at 500mA. Suppression


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    PDF ULN2002A/ ULN2003A/ ULN2004A ULN2002A ULN2003A ULN2004A 500mA. 4-25V ULN2003A ULN2003A application ULN2002A

    Untitled

    Abstract: No abstract text available
    Text: ULN2002A/ ULN2003A/ ULN2004A HIGH VOLTAGE, HIGH CURRENT DARLINGTON TRANSISTOR ARRAYS Description Pin Assignments The ULN2002A, ULN2003A and ULN2004A are high voltage, high current Darlington arrays each containing seven open collector ADVANCE INFORMATION common emitter pairs. Each pair is rated at 500mA. Suppression


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    PDF ULN2002A/ ULN2003A/ ULN2004A ULN2002A, ULN2003A ULN2004A 500mA. ULN2002A 4-25V ULN2003A

    elmos

    Abstract: elmos 101 TSSOP24 ELMOS SEMICONDUCTOR 12 volt smps Circuit diagram elmos 721 E910.26
    Text: - Preliminary - E910.27A External Adjustable High Efficiency PFM Step-Down Converter Features • • • • • • • • • • • • • • Brief Functional Description More than 90% efficiency and 100% duty cycle Wide input voltage range from 5V to 40V


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    PDF 500mA 300kHz TSSOP24 03SP0357E elmos elmos 101 ELMOS SEMICONDUCTOR 12 volt smps Circuit diagram elmos 721 E910.26

    4011N

    Abstract: 4013N 4011-N 94HB IC 4015N TIF140 P3055 4021N Bc 140 transistor transistor BC 55 gb
    Text: Leiterplattenführung horizontal Horizontal Press-in Card Guide CGI-W-160 r Nur eine Standardlänge speziell für Leiterplatten mit max. 2,3 mm Stärke, Wandhöhe 2,4 mm. One standard lenght for PCBs with max. 2,3 mm thickness, wall height 2,4 mm. r Montage: / Mounting:


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    PDF CGI-W-160 H1-50 H2-50 D-85640 4011N 4013N 4011-N 94HB IC 4015N TIF140 P3055 4021N Bc 140 transistor transistor BC 55 gb

    VS-200MT40KPBF

    Abstract: No abstract text available
    Text: VS-200MT40KPbF www.vishay.com Vishay Semiconductors Three Phase Bridge Power Module , 200 A FEATURES • Package fully compatible with the industry standard INT-A-PAK power modules series • High thermal conductivity package, electrically insulated case


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    PDF VS-200MT40KPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 VS-200MT40KPBF

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


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    PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    220v AC voltage stabilizer schematic diagram

    Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585


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    PDF AD9272 P462-ND LNG295LFCP2U P463-ND LNG395MFTP5U 220v AC voltage stabilizer schematic diagram LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx

    HFA25PB60

    Abstract: Fast Rec Rect CL50 27ac
    Text: P D -2 .3 3 8 international im i Rectifier HEXFRED Provisional Data Sheet HFA25PB60 ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics Characteristics V •FfAV 25 A »II w r / oo _ Qrr typ) 112 nC 10 A 250 1.7 Alus Ir r m di(rec)M/dt (tvp)


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    PDF HFA25PB60 00A/JXS Fast Rec Rect CL50 27ac

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


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    PDF 10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TMP47C1220/1620 CMOS 4-BIT MICROCONTROLLER TMP47C1220F, TMP47C1620F The 47C1220/1620 are high speed and high performance 4-bit single chip microcomputers, with large capacity ROM and RAM, based on the 47C620 / 820 TLCS-470 series . PART No. ROM TMP47C1220F


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    PDF TMP47C1220/1620 TMP47C1220F, TMP47C1620F 47C1220/1620 47C620 TLCS-470 TMP47C1220F QFP80-P-1420-0 TMP47P1620VF

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76