FZT696B
Abstract: NPN Transistor VCEO 1000V transistor VCBO 1000V IC 100mA DSA003714 darlington NPN 1000V transistor
Text: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT696B TYPICAL CHARACTERISTICS IC/IB=100 0.6 0.6 0.4 0.2 0.01 0.1 1 1.4 0.01 10 1 10 I+ - Collector Current Amps VCE(sat) v IC VCE(sat) v IC VCE=5V -55°C +25°C +100°C +175°C 1.6 1.5K 1K 0.8
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OT223
FZT696B
100mA
100mA,
200mA,
50MHz
FZT696B
NPN Transistor VCEO 1000V
transistor VCBO 1000V IC 100mA
DSA003714
darlington NPN 1000V transistor
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PDF
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ir igbt 1200V 40A
Abstract: igbt 1200V 40A short circuit on 4772 200uH HF40D120ACE IRGPS40B120U 1200v fet Super-247 Package
Text: PD - 94295 PROVISIONAL IRGPS40B120U UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Low VCE on Non Punch Through IGBT Technology • 10µs Short Circuit Capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Super-247 Package
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IRGPS40B120U
Super-247
20KHz
Super-247TM
5M-1994.
O-274AA
ir igbt 1200V 40A
igbt 1200V 40A short circuit
on 4772
200uH
HF40D120ACE
IRGPS40B120U
1200v fet
Super-247 Package
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PDF
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IRG4PH40S
Abstract: No abstract text available
Text: PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low on state voltage drop 1.0V typical at 5.0A • Extremely low VCE on variation from lot to lot • Industry standard TO-247AC package VCES = 1200V VCE(on) typ. = 1.46V
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IRG4PH40S
O-247AC
O-247AC
IRG4PH40S
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PDF
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IRG4PH40S
Abstract: No abstract text available
Text: PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low on state voltage drop 1.0V typical at 5.0A • Extremely low VCE on variation from lot to lot • Industry standard TO-247AC package VCES = 1200V VCE(on) typ. = 1.46V
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IRG4PH40S
O-247AC
O-247AC
IRG4PH40S
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PDF
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transistor A55
Abstract: mount transistor A55 IRG4PH40
Text: PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low on state voltage drop 1.0V typical at 5.0A • Extremely low Vce on variation from lot to lot • Industry standard TO-247AC package VCES = 1200V VCE(on) typ. = 1.46V
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IRG4PH40S
O-247AC
O-247AC
transistor A55
mount transistor A55
IRG4PH40
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PDF
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Untitled
Abstract: No abstract text available
Text: IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
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IRG7PG35UPbF
IRG7PG35U-EPbF
O-247AC
O-247AD
IRG7PG35UPbF/IRG7PG35U-EPbF
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PDF
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Untitled
Abstract: No abstract text available
Text: IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR C Features • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
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IRG7PG42UDPbF
IRG7PG42UD-EPbF
IRG7PG42UDPbF/IRG7PG42UD-EPbF
O-247AC
JESD47F)
O-247AD
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PDF
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Untitled
Abstract: No abstract text available
Text: AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES High speed switching Low Saturation Voltage VCE sat =3.0V@IC=30A Industry Standard TO-3P Package 1000V IC 30A C G C RoHS Compliant E
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AP30G100W
30G100W
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transistor TO-3P Outline Dimensions
Abstract: No abstract text available
Text: AP30G100W RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features VCES 1000V 30A IC ▼ High speed switching ▼ Low Saturation Voltage VCE sat =3.0V@IC=30A ▼ Industry Standard TO-3P Package C G G C ▼ RoHS Compliant
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AP30G100W
Fig11.
30G100W
transistor TO-3P Outline Dimensions
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V IXBF42N300 (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C
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IC110
IXBF42N300
100ms
42N300
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C
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IXBF42N300
IC110
IC110
100ms
100ms
42N300
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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5899A
IRGPS40B120UP
Super-247
Super-247â
IRFPS37N50A
IRFPS37N50A
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B20N300C VCES = 3000V IC110 = 20A VCE sat 6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C
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MMIX1B20N300C
IC110
20N300C
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B15N300C VCES = 3000V IC110 = 15A VCE sat 6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C
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MMIX1B15N300C
IC110
15N300C
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TRANSISTOR N 1380 600 300 SC
Abstract: MOSFET 40A 600V IRGPS40B120U mosfet 1200V 40A 1200V, IGBT 500A 1200V
Text: PD- 94295A IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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4295A
IRGPS40B120U
Super-247
Super-247TM
5M-1994.
O-274AA
TRANSISTOR N 1380 600 300 SC
MOSFET 40A 600V
IRGPS40B120U
mosfet 1200V 40A
1200V,
IGBT 500A 1200V
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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94295D
IRGPS40B120U
Super-247
Super-247â
IRFPS37N50A
IRFPS37N50A
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PDF
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mosfet 1200V 40A
Abstract: IRFPS37N50A IRGPS40B120U 800V 40A mosfet 94295D *40b120u ir igbt 1200V 40A
Text: PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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94295D
IRGPS40B120U
Super-247
Super-247TM
Super-247TM
IRFPS37N50A
IRFPS37N50A
mosfet 1200V 40A
IRGPS40B120U
800V 40A mosfet
94295D
*40b120u
ir igbt 1200V 40A
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IXBF
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 3000
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IXBF42N300
IC110
IC110
100ms
100ms
42N300
IXBF
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mosfet 1200V 40A
Abstract: *40b120u ir igbt 1200V 40A 800V 40A mosfet igbt 40A 600V IRFPS37N50A IRGPS40B120U transistor 600v 500a 312V marking code l200h
Text: PD- 94295B IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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94295B
IRGPS40B120U
Super-247
Super-247TM
Super-247TM
IRFPS37N50A
IRFPS37N50A
mosfet 1200V 40A
*40b120u
ir igbt 1200V 40A
800V 40A mosfet
igbt 40A 600V
IRGPS40B120U
transistor 600v 500a
312V marking code
l200h
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 95899 IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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IRGPS40B120UP
Super-247
Super-247â
IRFPS37N50A
IRFPS37N50A
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PDF
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Untitled
Abstract: No abstract text available
Text: PD- 94295C IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.
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94295C
IRGPS40B120U
Super-247
Super-247â
IRFPS37N50A
IRFPS37N50A
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PDF
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P channel 600v 20a IGBT
Abstract: HF40D120ACE IRGP20B120U-E
Text: PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • UltraFast Non Punch Through NPT Technology • 10 µs Short Circuit capability • Square RBSOA • Positive VCE(on) Temperature Coefficient • Extended lead TO-247 package
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IRGP20B120U-E
O-247
20KHz
O-247AD
O-247AD
P channel 600v 20a IGBT
HF40D120ACE
IRGP20B120U-E
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PDF
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat 3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C
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IXBF20N360
IC110
20N360
H7-B11)
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PDF
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GT15N101
Abstract: No abstract text available
Text: INSULATED GATE BIPOLAR TRANSISTOR GT15N101 SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm 15,9 MAX Zi3.2±a2 . High Input Impedance . High Speed : tf=l.Oils Max. ) . Low Saturation Voltage ; VcE(sat)=5.0V(Max.)
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OCR Scan
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GT15N101
GT15N101
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PDF
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