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    TRANSISTOR VCBO 1000V IC 100MA Search Results

    TRANSISTOR VCBO 1000V IC 100MA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR VCBO 1000V IC 100MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    pnp transistor 1000v

    Abstract: FMMT558 FMMT458 ZTX558 DSA003698
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 TYPICAL CHARACTERISTICS 1.4 1.0 0.6 V 0.6


    Original     		PDF FMMT558 100mA FMMT458 -50mA, -100mA, -10mA, 20MHz -100V pnp transistor 1000v FMMT558 FMMT458 ZTX558 DSA003698

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 TYPICAL CHARACTERISTICS 1.4 1.0 0.6 V 0.6


    Original     		PDF FMMT558 100mA FMMT458 -50mA, -100mA, -10mA, 20MHz -100V

    pnp transistor 1000v

    Abstract: FMMT558 FMMT458 DSA003671
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT558 ISSUE 3 – JANUARY 1996 FEATURES * Excellent hFE characteristics at IC=100mA * Low saturation voltages COMPLEMENTARY TYPE – FMMT458 PARTMARKING DETAIL – 558 TYPICAL CHARACTERISTICS 1.4 1.0 0.6 V 0.6


    Original     		PDF FMMT558 100mA FMMT458 -50mA, -100mA, -10mA, 20MHz -100V pnp transistor 1000v FMMT558 FMMT458 DSA003671

    E2 diode

    Abstract: Diode B2x
    Text: TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 （M） QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. C2E1


    Original     		PDF QCA30B/QCB30A40/60 E76102 QCA30B QCB30A 110TAB 94max 32max 31max 35max 400/600V E2 diode Diode B2x

    transistor VCBO 1000V IC 100mA

    Abstract: pnp transistor 1000v FMMT596 DSA003699
    Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT596 ISSUE 3 - NOVEMBER 1995 FMMT596 ✪ PARTMARKING DETAIL – 596 TYPICAL CHARACTERISTICS 0.4 0.4 +25 ° C 0.3 0.2 ABSOLUTE MAXIMUM RATINGS. -55 °C +25 °C +100 °C 0.2 0.1 B I+/I*=10 0.3 I+/I*=10 I+/I*=50


    Original     		PDF FMMT596 100mA 100ms -100mA -250mA -400mA -50mA, transistor VCBO 1000V IC 100mA pnp transistor 1000v FMMT596 DSA003699

    NPN Transistor VCEO 1000V

    Abstract: transistor VCE 1000V transistor VCBO 1000V IC 100mA BUL810 Halogen lighting transformer transistor VCEO 1000V electronic transformer halogen NPN Transistor 8A 1000v, NPN 8A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL810 DESCRIPTION •High Voltage Capability ·High Switching Speed APPLICATIONS Designed for use in lighting applications and low cost swith-mode power supplies. ·Electronic transformer for halogen lamps


    Original     		PDF BUL810 NPN Transistor VCEO 1000V transistor VCE 1000V transistor VCBO 1000V IC 100mA BUL810 Halogen lighting transformer transistor VCEO 1000V electronic transformer halogen NPN Transistor 8A 1000v, NPN 8A

    pnp transistor 1000v

    Abstract: FMMT555 FMMT455 PNP POWER TRANSISTOR SOT23 ZTX554 ZTX555 DSA003698 transistor VCBO 1000V IC 100mA
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 TYPICAL CHARACTERISTICS ZTX5 5 4 /5 5 -2 ts ns µs 500 Switching time - Volts -0.6 tr -0.4 V -0.2 400 4 300 3 200 2 -0.0001 -0.001 -0.01 -0.1 -1 800 tf td 400 100 200 50 1 tr -0.01 IC - Collector Current (Amps)


    Original     		PDF FMMT555 FMMT455 IC/10 100ms -10mA, -300mA, -50mA, 100MHz ZTX554 ZTX555 pnp transistor 1000v FMMT555 FMMT455 PNP POWER TRANSISTOR SOT23 ZTX554 ZTX555 DSA003698 transistor VCBO 1000V IC 100mA

    FMMT455

    Abstract: FMMT555 transistor ztx
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 ISSUE 4 – AUGUST 2003 FEATURES * 150 Volt VCEO * 1 Amp continuous current TYPICAL CHARACTERISTICS ZTX554/55-2 tr ns Switching time 200 2 -0.001 -0.01 -0.1 200 1 -1 400 100 -0.01 tr IC - Collector Current Amps


    Original     		PDF FMMT555 FMMT455 IC/10 -100mA, -10mA* -10mA, FMMT455 FMMT555 transistor ztx

    pnp transistor 1000v

    Abstract: FMMT455 FMMT555 transistor VCBO 1000V IC 100mA DSA003671
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 TYPICAL CHARACTERISTICS ZTX5 5 4 /5 5 -2 ts ns µs 500 Switching time - Volts -0.6 tr -0.4 V -0.2 400 4 300 3 200 2 -0.0001 -0.001 -0.01 -0.1 -1 800 tf td 400 100 200 50 1 tr -0.01 IC - Collector Current (Amps)


    Original     		PDF FMMT555 FMMT455 IC/10 100ms -10mA, -300mA, -50mA, 100MHz pnp transistor 1000v FMMT455 FMMT555 transistor VCBO 1000V IC 100mA DSA003671

    Untitled

    Abstract: No abstract text available
    Text: SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FMMT555 ISSUE 4 – AUGUST 2003 FEATURES * 150 Volt VCEO * 1 Amp continuous current TYPICAL CHARACTERISTICS ZTX554/55-2 tr ns Switching time 200 2 -0.001 -0.01 -0.1 1 -0.01 -1 400 100 200 tr IC - Collector Current Amps


    Original     		PDF FMMT555 FMMT455 IC/10 -100mA, -10mA* -10mA,

    Untitled

    Abstract: No abstract text available
    Text: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and


    Original     		PDF BUL54A-TO5 O-205AA)

    transistor VCEO 1000V

    Abstract: NPN Transistor VCEO 1000V BUL54A-TO5 LE17
    Text: SILICON POWER NPN TRANSISTOR BUL54A-TO5 • Advanced Distributed Base design • High Voltage • Fast Switching • High Energy Rating • Screening Options Available Features: • • • Multi–base for efficient energy distribution across the chip resulting in significantly improved switching and


    Original     		PDF BUL54A-TO5 O-205AA) transistor VCEO 1000V NPN Transistor VCEO 1000V BUL54A-TO5 LE17

    FZT696B

    Abstract: NPN Transistor VCEO 1000V transistor VCBO 1000V IC 100mA DSA003714 darlington NPN 1000V transistor
    Text: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT696B TYPICAL CHARACTERISTICS IC/IB=100 0.6 0.6 0.4 0.2 0.01 0.1 1 1.4 0.01 10 1 10 I+ - Collector Current Amps VCE(sat) v IC VCE(sat) v IC VCE=5V -55°C +25°C +100°C +175°C 1.6 1.5K 1K 0.8


    Original     		PDF OT223 FZT696B 100mA 100mA, 200mA, 50MHz FZT696B NPN Transistor VCEO 1000V transistor VCBO 1000V IC 100mA DSA003714 darlington NPN 1000V transistor

    BUY69

    Abstract: BUY69A NPN Transistor VCEO 1000V
    Text: BUY69A High Voltage Power Transistor High Voltage Power Switch are designed for horizontal deflection output stage of CTV receivers and high voltage, fast switching and industrial application. Features: • Collector-Emitter Sustaining Voltage-100mA VCEO sus = 400V (Minimum).


    Original     		PDF BUY69A Voltage-100mA BUY69 BUY69A NPN Transistor VCEO 1000V

    BUY69A

    Abstract: BUY69 NPN Transistor VCEO 1000V
    Text: 1165903 High voltage power switch. designed for horizontal deflection output stage of CTV receivers and high voltage, fast switching and industrial application. Features: • Collector-emitter sustaining voltage - 100mA. • VCEO sus = 400V (minimum). • Optimum drive condition curves.


    Original     		PDF 100mA. BUY69A BUY69A BUY69 NPN Transistor VCEO 1000V

    QM50TB-2HB

    Abstract: E80276 all transistor
    Text: MITSUBISHI TRANSISTOR MODULES QM50TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50TB-2HB • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750


    Original     		PDF QM50TB-2HB E80276 E80271 100mA QM50TB-2HB E80276 all transistor

    qm150dy-2hk

    Abstract: QM150DY-2H Diode B2x E80276
    Text: MITSUBISHI TRANSISTOR MODULES QM150DY-2HK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-2HK • • • • • IC Collector current . 150A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 75


    Original     		PDF QM150DY-2HK E80276 E80271 qm150dy-2hk QM150DY-2H Diode B2x E80276

    Untitled

    Abstract: No abstract text available
    Text: NTE2679 Silicon NPN Transistor Power, High Voltage w/Built−In Damper Diode TO220F Type Package Features: D High Breakdown Voltage: VCBO = 1500V Min D Wide Area of Safe Operation D Built−In Damper Diode Applications: D Horizontal Deflection Output for TV or CRT Monitor


    Original     		PDF NTE2679 O220F 100mA, 750mA,

    QM75DY-2H

    Abstract: QM75DY-2HB E80276
    Text: MITSUBISHI TRANSISTOR MODULES QM75DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-2HB • • • • • IC Collector current . 75A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750


    Original     		PDF QM75DY-2HB E80276 E80271 QM75DY-2H QM75DY-2HB E80276

    E80276

    Abstract: QM300DY-2HB
    Text: MITSUBISHI TRANSISTOR MODULES QM300DY-2HB HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-2HB • • • • • IC Collector current . 300A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750


    Original     		PDF QM300DY-2HB E80276 E80271 E80276 QM300DY-2HB

    QM50DY-2HB

    Abstract: TRANSISTOR TC 100 E80276 transistor VCE 1000V
    Text: MITSUBISHI TRANSISTOR MODULES QM50DY-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-2HB • • • • • IC Collector current . 50A VCEX Collector-emitter voltage . 1000V hFE DC current gain. 750


    Original     		PDF QM50DY-2HB E80276 E80271 100mA QM50DY-2HB TRANSISTOR TC 100 E80276 transistor VCE 1000V

    Untitled

    Abstract: No abstract text available
    Text: SEME BUL52A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 Designed for use in electronic ballast applications 18.0 15.1 3.6 Dia. 1 2 3 14.0 1.3 0.85 0.5 2.54 2.54


    Original     		PDF BUL52A 100mA

    Untitled

    Abstract: No abstract text available
    Text: SEME BUL54AFI LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 6.3 10.2 3.6 Dia. 15.1 Designed for use in electronic ballast applications • • • • • 1 2 3 14.0 1.3 0.85 2.54 2.54


    Original     		PDF BUL54AFI 100mA

    BUL52A

    Abstract: semefab NPN Transistor VCEO 1000V
    Text: SEME BUL52A LAB ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 10.2 4.5 6.3 1.3 Designed for use in electronic ballast applications 18.0 15.1 3.6 Dia. 1 2 3 14.0 1.3 0.85 0.5 2.54 2.54


    Original     		PDF BUL52A 100mA BUL52A semefab NPN Transistor VCEO 1000V