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    TRANSISTOR TO-92 9013 Search Results

    TRANSISTOR TO-92 9013 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TO-92 9013 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    9012 Unisonic

    Abstract: No abstract text available
    Text: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER


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    625mW) -500mA) -50mA -500mA -500mA -10mA QW-R201-029 9012 Unisonic PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER


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    625mW) -500mA) QW-R201-029 PDF

    9013 transistor

    Abstract: Transistor-9013 h UTC 9013 9013 NPN Transistor
    Text: UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER


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    625mW) 500mA) 500mA 500mA, QW-R201-030 9013 transistor Transistor-9013 h UTC 9013 9013 NPN Transistor PDF

    9012 pnp

    Abstract: UTC 9013 9012 transistor data sheet transistor 9012 Transistor 9012 G PNP 9012 transistor c 9012 9012 pnp transistor 9013 transistor Transistor 9013
    Text: UTC 9012 PNP EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (-500mA) *Excellent hFE linearity *Complementary to UTC 9013 1 TO-92 1:EMITTER


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    625mW) -500mA) QW-R201-029 9012 pnp UTC 9013 9012 transistor data sheet transistor 9012 Transistor 9012 G PNP 9012 transistor c 9012 9012 pnp transistor 9013 transistor Transistor 9013 PDF

    UTC 9013

    Abstract: 9013 NPN data sheet NPN 9013 transistor c 9013 9013 npn transistor NPN SILICON TRANSISTOR 9013 UTC9013 NPN 9013 PDF DATA SHEET 9013npn 9012 Unisonic
    Text: UTC 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION FEATURES *High total power dissipation. 625mW *High collector current. (500mA) *Excellent hFE linearity. *Complementary to UTC 9012 1 TO-92 1: EMITTER


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    625mW) 500mA) QW-R201-030 UTC 9013 9013 NPN data sheet NPN 9013 transistor c 9013 9013 npn transistor NPN SILICON TRANSISTOR 9013 UTC9013 NPN 9013 PDF DATA SHEET 9013npn 9012 Unisonic PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR  DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92  ORDERING INFORMATION Ordering Number


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    MPSH10 MPSH10 MPSH10L-x-T92-B MPSH10G-x-T92-B MPSH10L-x-T92-K MPSH10G-x-T92-K QW-R201-022 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR „ DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 „ ORDERING INFORMATION Ordering Number


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    MPSH10A MPSH10A MPSH10A-x-T92-B MPSH10AL-x-T92-B MPSH10AG-x-T92-B MPSH10A-x-T92-K MPSH10AL-x-T92-K MPSH10AG-x-T92-K QW-R201-065 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR  DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92  ORDERING INFORMATION Ordering Number


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    MPSH10A MPSH10A MPSH10AL-x-T92-B MPSH10AG-x-T92-B MPSH10AL-x-T92-K MPSH10AG-x-T92-K QW-R201-065 PDF

    9013 npn transistor

    Abstract: 9012 Unisonic
    Text: UNISONIC TECHNOLOGIES CO., LTD 9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 1  FEATURES TO-92 * High total power dissipation. 625mW * High collector current. (500mA) * Excellent hFE linearity.


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    625mW) 500mA) 9013L-x-T92-B 9013G-x-T92-B 9013L-x-T92-K 9013G-x-T92-K QW-R201-030 9013 npn transistor 9012 Unisonic PDF

    mpsh10

    Abstract: MPS-H10 MPSH10G transistor l2
    Text: UNISONIC TECHNOLOGIES CO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR „ DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 „ ORDERING INFORMATION Ordering Number Normal


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    MPSH10 MPSH10 MPSH10-x-T92-B MPSH10L-x-T92-B MPSH10G-x-T92-B MPSH10-x-T92-K MPSH10L-x-T92-K MPSH10G-x-T92-K QW-R201-022 MPS-H10 MPSH10G transistor l2 PDF

    MPSH10 datasheet

    Abstract: UTC200 MPSH10 100MHZ
    Text: UTC MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER


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    MPSH10 MPSH10 QW-R201-022 MPSH10 datasheet UTC200 100MHZ PDF

    MPSH10 datasheet

    Abstract: 100MHZ MPSH10
    Text: UTC MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C PARAMETER


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    MPSH10 MPSH10 1000pF 8-10pF 100pF 0-18pF MPSH10 datasheet 100MHZ PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MPSH10 A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C


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    MPSH10 MPSH10A 1000pF 8-10pF 100pF 0-18pF PDF

    UTC200

    Abstract: 100MHZ MPSH10 MPSH10A
    Text: UTC MPSH10 A NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MPSH10A is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C


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    MPSH10 MPSH10A QW-R201-065 UTC200 100MHZ PDF

    Transistor 9013

    Abstract: Transistor-9013 h transistor BR 9013 BR 9013 datasheet transistor 9013
    Text: NPN SILICON TRANSISTOR 9013 TO 92 FEATURES 特 1.EMITTER 征 发 射 极 Power dissipation 最大耗散功率 PCM : 0.625 W Collector current ICM : 基 极 Tamb=25 3.COLLECTOR 最大集电极电流 0.5 电 极 1 2 3 集电极-基极击穿电压 V BR CBO : 45


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    500mA, 100mA 30MHz Transistor 9013 Transistor-9013 h transistor BR 9013 BR 9013 datasheet transistor 9013 PDF

    MPSH10 H parameters

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD MPSH10 NPN EPITAXIAL SILICON TRANSISTOR RF T RAN SI ST OR ̈ DESCRI PT I ON The UTC MPSH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 1 TO-92 ̈ ORDERI N G I N FORM AT I ON Ordering Number


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    MPSH10 MPSH10 MPSH10-x-T92-B MPSH10L-x-T92-B MPSH10G-x-T92-B MPSH10-x-T92-K MPSH10L-x-T92-K MPSH10G-x-T92-K QW-R201-022 MPSH10 H parameters PDF

    diode R31

    Abstract: NPN Transistor 10A 24V AD1P
    Text: FS9922-DMM4 Data Sheet Integrated Circuits of 6,000 Counts Auto-ranging Digital Multimeter with Bar Graph Rev. 1.0 Mar. 2005 Fortune Semiconductor Corp. FS9922-DMM4-DS-10_EN CR-004 FS9922-DMM4 Taipei Office: 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251,


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    FS9922-DMM4 FS9922-DMM4-DS-10 CR-004 100-pin diode R31 NPN Transistor 10A 24V AD1P PDF

    FS9922-DMM3

    Abstract: No abstract text available
    Text: FS9922-DMM3 Data Sheet Integrated Circuits of 4,000 Counts Auto-ranging Digital Multimeter with Bar Graph Rev. 0.5 Dec. 2004 Fortune Semiconductor Corp. FS9922-DMM3-DS-05_EN CR-004 FS9922-DMM3 Taipei Office: 28F., No.27, Sec. 2, Zhongzheng E. Rd., Danshui Town, Taipei County 251,


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    FS9922-DMM3 FS9922-DMM3-DS-05 CR-004 100-pin FS9922-DMM3 PDF

    FS9922-DMM3-DS-06

    Abstract: AD1P fs9922
    Text: REV. 0.6 FS9922-DMM3-DS-06_EN Datasheet FS9922-DMM3 Integrated Circuits of 4,000 Counts Auto-ranging Digital Multimeter with Bar Graph SEP 2006 FS9922-DMM3 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd.,


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    FS9922-DMM3-DS-06 FS9922-DMM3 FS9922-DM 100-pin AD1P fs9922 PDF

    FS9922-DMM4-DS-11

    Abstract: FS9922-DMM4
    Text: REV. 1.1 FS9922-DMM4-DS-11_EN Datasheet FS9922-DMM4 Integrated Circuits of 6,000 Counts Auto-ranging Digital Multimeter with Bar Graph SEP 2006 FS9922-DMM4 Fortune Semiconductor Corporation 富晶電子股份有限公司 28F., No.27, Sec. 2, Zhongzheng E. Rd.,


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    FS9922-DMM4-DS-11 FS9922-DMM4 FS9922-DM9 100-pin FS9922-DMM4 PDF

    diode st 4148

    Abstract: ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 1N4001-1N4007
    Text: TRANSISTOR & DIODE Transistor -S T 8050 - 1.5A TO-92 - ST 8050 (TO-92) - ST 8550 - 1.5A (TO-92) - ST 8550 (TO-92) - ST 9011 (TO-92) - ST 9012 (TO-92) - ST 9013 (TO-92) - ST 9014 (TO-92 -S T 9015 (TO-92) - ST 9016 (TO-92) -S T 9018 (TO-92) o - MMBT8050LT1 -1.5A (SOT-23)


    OCR Scan
    MMBT8050LT1 OT-23) -LL4001-LL4007 -LL4148 1N4001-1N4007 diode st 4148 ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 PDF

    kec kta

    Abstract: 9014 kec KTA966A 966a transistor 9012 TRANSISTOR 9014 KTC388A 2236A KTC2120 KTC2068
    Text: 0 TV TRANSISTOR ELECTRICAL CHARACTERISTICS Ta = 25 C MAXIMUM RATINGS USE TYPE VCEO (V) lC (mA) VCE (sat) MAX hFE TJ ICBO (mW) <°C) ( m A) VCB (V) PC [E (mA) VCE (V) ic (mA) (V) C o b ,* Crc Typ (MIN) h (MHz) VCE (V) 1c (mA) - (400) 10 4 Ic (mA) Iß (mA)


    OCR Scan
    382/KTN 383/KTN 88A/KTN 2229/KTN O-92A) KTC90U KTC9013 kec kta 9014 kec KTA966A 966a transistor 9012 TRANSISTOR 9014 KTC388A 2236A KTC2120 KTC2068 PDF

    JE9013

    Abstract: JE9012 92PA3
    Text: SEC NPN SILICON TRANSISTOR ELECTRON DEVICE JE9013 DESCRIPTION The JE 9013 is designed fo r use in 1 W o u tp u t a m p lifie r o f PACKAGE DIMENSIONS portable radios in class B push-pull operation. in m illim e te rs inches 5.2 MAX. (0.204 MAX.! FEATURES


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    JE9013 JE9013 JE9012. JE9012 92PA3 PDF

    germanium

    Abstract: kia 7208 KIA 7313 germanium transistor speaker protector
    Text: KOREA ELECTRONICS CO , LTD. KP—8111 PRODU CT GUIDE TRANSISTOR INTEGRATED CIRCUIT LIGHT-EMITTING DIODE DIODE KEC SEMICONDUCTOR MAXIMUM RATINGS v CEO USE lC Pc ELECTRICAL CHARACTERISTICS Ta = 25°C hFE TYPE (V) (mA) (mW) Vce (sat) MAX VCE lC (V) (mA) KTC I815/KTN 5014


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    I815/KTN 10I5/KTP 1923/KTN 380TM/KTN germanium kia 7208 KIA 7313 germanium transistor speaker protector PDF