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    TRANSISTOR TO-3 OUTLINE DIMENSIONS Search Results

    TRANSISTOR TO-3 OUTLINE DIMENSIONS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K341R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    XPH13016MC Toshiba Electronic Devices & Storage Corporation P-ch MOSFET, -60 V, -60 A, 0.0099 Ω@-10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TO-3 OUTLINE DIMENSIONS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TRANSISTOR S1A

    Abstract: TO220FL TOSHIBA IGBT DATA BOOK
    Text: Transistor Outline Package TO-220FL Package Outline Dimensions Outline Dimensions Unit: mm 1.32 10.6 max 9.1 10.3 max 2.5 max 0.76 2.54 ±0.25 12.6 min 1.6 max 2.54 ±0.25 3 0.5 2 1 1 2 3 4.7 max 2.6 Bottom view Toshiba package name TO–220FL Diode 12–10D1A


    Original     		PDF O-220FL 220FL 10D1A 10S1A 10S1B 10S1C TRANSISTOR S1A TO220FL TOSHIBA IGBT DATA BOOK

    W1A 95 3 pin transistor

    Abstract: transistor W1A W1A 95 TO220SM
    Text: Transistor Outline Package TO-220SM W Package Outline Dimensions Outline Dimensions Unit: mm 10.0 ±0.3 0.4 ±0.1 2.35 ±0.1 6.8 10.0 ±0.3 1.1 2.54 ±0.25 0.4 ±0.1 2 3 Land Pattern Example 3 2 1 (Bottom view) 0.1 ±0.1 3.5 ±0.2 2.76 2.34 ±0.25 1 8.0


    Original     		PDF O-220SM 10W1A 220SM W1A 95 3 pin transistor transistor W1A W1A 95 TO220SM

    transistor TO-220 Outline Dimensions

    Abstract: No abstract text available
    Text: Transistor Outline Package TO-220 W Package Outline Dimensions Outline Dimensions Unit: mm 10.0 ±0.3 A 9.0 3.2 2.8 φ3.65 ±0.2 0.6 ±0.1 15.0 ±0.3 9.5 ±0.2 0.75 ±0.25 0.62 ±0.15 2.54 12.8 ±0.5 A 1 2 3 3 0.57 +0.25 –0.10 2.54 1 (Bottom view) Toshiba package name


    Original     		PDF O-220 10V1A transistor TO-220 Outline Dimensions

    TRANSISTOR S2A

    Abstract: 10D2A
    Text: Transistor Outline Package Surface-Mount Type TO-220SM Package Outline Dimensions Outline Dimensions Unit: mm 1.32 2.54 ±0.25 1 2 0.6 10.6 max 3 0.5 2 1 (Bottom view) 0.1 2.6 2.54 ±0.25 4.7 max 0.76 3.0 ±0.2 1.5 9.1 10.3 max 3 Land Pattern Example Unit: mm


    Original     		PDF O-220SM 220SM 10D2A 10S2A 10S2B 10S2C TRANSISTOR S2A 10D2A

    TO-3P Jedec package outline

    Abstract: 3p transistor transistor outline package 3
    Text: Transistor Outline Package TO-3P W Package Outline Dimensions Outline Dimensions Unit: mm 0.8 +0.2 –0.1 15.5 ±0.3 A 20.0 ±0.3 3.0 max 4.5 φ3.2 ±0.2 A 1.0 +0.3 –0.25 5.45 1 2 3 3 0.8 +0.3 –0.1 5.45 1 (Bottom view) Toshiba package name Toshiba package code


    Original     		PDF 16K1A TO-3P Jedec package outline 3p transistor transistor outline package 3

    TOSHIBA IGBT DATA BOOK

    Abstract: transistor R1A r1a transistor 10R1A 10R1B 2-10R1A
    Text: Transistor Outline Package New Isolated Type TO–220NIS Package Outline Dimensions Outline Dimensions Unit: mm 2.7 ±0.2 10.0 ±0.3 5.6 max 1.1 1.1 0.75 ±0.15 2.54 ±0.25 15.0 ±0.3 13.0 min 3.9 3.0 φ3.2 ±0.2 2 3 0.75 ±0.15 4.5 ±0.2 1 2.6 2.54 ±0.25


    Original     		PDF 220NIS 220NIS 10C1A 10R1A 10R1B 10R1C TOSHIBA IGBT DATA BOOK transistor R1A r1a transistor 10R1A 10R1B 2-10R1A

    3p transistor

    Abstract: TO-3P Jedec package outline
    Text: Transistor Outline Package New Isolated Type TO–3P (N) IS Package Outline Dimensions Outline Dimensions Unit: mm 3.5 15.8 ±0.5 3.6 max 2.0 1.0 +0.25 –0.15 5.45 ±0.2 21.0 ±0.5 19.4 min (15.5) 5.5 φ3.6 ±0.2 0.6 +0.25 –0.15 2 3 5.0 ±0.3 1 3.15 +0.2


    Original     		PDF 16F1A 16F1B 16E1A 16F1C 3p transistor TO-3P Jedec package outline

    TOSHIBA IGBT DATA BOOK

    Abstract: TO-220AB transistor package 10P1A
    Text: Transistor Outline Package TO-220AB Package Outline Dimensions Outline Dimensions Unit: mm 1.32 15.7 max 3.0 φ3.6 ±0.2 6.7 max 10.3 max 2.5 max 12.6 min 1.6 max 0.76 3 2 3 0.5 1 Bottom view Toshiba package name Toshiba package code Notes • The above diagrams may not be actual sizes. Diagrams may be enlarged,


    Original     		PDF O-220AB 220AB 10P1A 10P1B 10P1C TOSHIBA IGBT DATA BOOK TO-220AB transistor package 10P1A

    3p transistor

    Abstract: 2-16C1B
    Text: Transistor Outline Package New Type TO–3P (N) Package Outline Dimensions Outline Dimensions Unit: mm 1.8 max 15.9 max 3.3 max 2.0 ±0.3 1.0 +0.3 –0.25 5.45 ±0.2 20.5 ±0.5 9.0 2.0 20.0 ±0.3 4.5 φ3.2 ±0.2 3 4.8 max 2 2.8 1 (Bottom view) 0.6 +0.3 –0.1


    Original     		PDF 16D1A 16C1A 16C1B 16C1C 3p transistor 2-16C1B

    Untitled

    Abstract: No abstract text available
    Text: Transistor Outline Package TO-220SIS Package Outline Dimensions Outline Dimensions Unit: mm 2.7 ±0.2 10.0 ±0.3 A 15.0 ±0.3 3.9 3.0 φ3.2 ±0.2 0.69 ±0.15 2.54 13.0 ±0.5 A 2.54 1 2 3 0.64 ±0.15 4.5 ±0.2 M 2.6 ±0.1 φ0.2 2.8 max 1.14 ±0.15 Toshiba package name


    Original     		PDF O-220SIS 220SIS 10U1A 10U1B 10U1C

    TO92 package

    Abstract: transistor TO-92 Outline Dimensions SC-43 TO-92 package transistor Toshiba sc43 210 to92 TO92 PACKAGE DIMENSION
    Text: Transistor Outline Package TO-92 Package Outline Dimensions Outline Dimensions Unit: mm 4.7 max 5.1 max 0.8 1.8 0.55 max 12.7 min 0.45 1.27 0.45 4.1 max 1.27 1 2 3 Notes • The above diagrams may not be actual sizes. Diagrams may be enlarged, reduced, or stretched in either dimension.


    Original     		PDF 200utline TO92 package transistor TO-92 Outline Dimensions SC-43 TO-92 package transistor Toshiba sc43 210 to92 TO92 PACKAGE DIMENSION

    transistor TO-3P Outline Dimensions

    Abstract: TRANSISTOR 545 3p transistor TO-3P Jedec package outline TOSHIBA IGBT DATA BOOK
    Text: Transistor Outline Package TO-3P L Package Outline Dimensions Outline Dimensions Unit: mm 20.5 max 26.0 ±0.5 11.0 2.0 4.0 6.0 φ3.3 ±0.2 3.0 1.0 +0.3 –0.25 20.0 ±0.6 2.5 2.5 3 1 (Bottom view) Toshiba package name Toshiba package code Notes • The above diagrams may not be actual sizes. Diagrams may be enlarged,


    Original     		PDF 21F1A 21F1B 21F1C transistor TO-3P Outline Dimensions TRANSISTOR 545 3p transistor TO-3P Jedec package outline TOSHIBA IGBT DATA BOOK

    C 5478 transistor

    Abstract: transistor 5478 7807 transistor NEL2004 1N4454 1N5254 NEL2004F02-24 resistor 39 ohm diode 1n4454
    Text: NPN SILICON BIPOLAR L - BAND POWER TRANSISTOR FEATURES NEL2004F02-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: PACKAGE OUTLINE F02 1.5 W Class A, 7 W Class AB BASE • USEABLE FROM 1.5 TO 2.0 GHz (Input Pre-matched) 3±0.2 2±0.2 5.85±0.2 EMITTER


    Original     		PDF NEL2004F02-24 NEL2004F02-24 24-Hour C 5478 transistor transistor 5478 7807 transistor NEL2004 1N4454 1N5254 resistor 39 ohm diode 1n4454

    jedec package TO-236AB

    Abstract: transistor 304
    Text: a 3-Lead Small Outline Transistor Package [SOT-23] RT-3 Dimensions shown in millimeters 3.04 2.90 2.80 1.40 1.30 1.20 3 1 2.64 2.10 2 PIN 1 0.95 BSC 1.90 BSC 1.12 0.89 0.10 0.01 SEATING PLANE 0.50 0.30 0.60 0.50 0.40 COMPLIANT TO JEDEC STANDARDS TO-236AB


    Original     		PDF OT-23] O-236AB jedec package TO-236AB transistor 304

    JEDEC to 243

    Abstract: RK-3 RK 3 TO-243 121808-B
    Text: a 3-Lead Small Outline Transistor Package [SOT-89] RK-3 Dimensions shown in millimeters *1.75 1.55 (2) 4.25 3.94 1 2 2.60 2.30 3 1.20 0.75 1.50 TYP 3.00 TYP 2.29 2.14 4.60 4.40 1.60 1.40 0.44 0.35 END VIEW *0.52 0.32 *COMPLIANT TO JEDEC STANDARDS TO-243 WITH


    Original     		PDF OT-89] O-243 121808-B JEDEC to 243 RK-3 RK 3 TO-243 121808-B

    SC82

    Abstract: transistor SC82
    Text: 4-Lead Thin Shrink Small Outline Transistor Package [SC70] KS-4 Dimensions shown in millimeters a 2.20 1.80 4 1 0.65 BSC 3 2 2.40 1.80 0.50 BSC 1.00 0.80 1.10 0.80 0.10 MAX COPLANARITY 0.10 0.30 0.15 *0.70 0.50 SEATING PLANE 0.40 0.10 0.18 0.10 *PACKAGE OUTLINE CORRESPONDS IN FULL TO EIAJ SC82


    Original     		PDF 72809-A SC82 transistor SC82

    2N3055 r2

    Abstract: 2N3055 J 2N3055 CD8070
    Text: UPIO. TO3.CB w/2N3055 UP10 for Single TO-3 Outline b; flll° ' J ' ~100 90 ai 80 ~ < UJ 70' DESCRIPTION OF CURVES C L 1Z UJ ~ ~ < TO.3 TRANSISTOR ~ J.:;!B/ ~ ~ -+-' / ,~ ~, / N.C. Horiz. Device Only Mounted to G.10. , -N.C. Horiz. & Vert. With Dissipator.


    Original     		PDF w/2N3055 2N3055 r2 2N3055 J 2N3055 CD8070

    2SC4941

    Abstract: NPN Transistor VCEO 1200V
    Text: SavantIC Semiconductor Product Specification 2SC4941 Silicon NPN Power Transistors DESCRIPTION •With TO-3PML package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol


    Original     		PDF 2SC4941 2SC4941 NPN Transistor VCEO 1200V

    2SC4941

    Abstract: No abstract text available
    Text: Inchange Semiconductor Product Specification 2SC4941 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・Switching power transistor ・High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-3PML and symbol


    Original     		PDF 2SC4941 2SC4941

    2SC3164

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SC3164 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-247 package ・Switching power transistor ・High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol


    Original     		PDF 2SC3164 O-247 O-247) 2SC3164

    2SC4237

    Abstract: TO-247 NPN SILICON POWER TRANSISTORS transistor 2sc4237
    Text: SavantIC Semiconductor Product Specification 2SC4237 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol


    Original     		PDF 2SC4237 O-247 O-247) 2SC4237 TO-247 NPN SILICON POWER TRANSISTORS transistor 2sc4237

    2SC4236

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SC4236 Silicon NPN Power Transistors DESCRIPTION •With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline TO-247 and symbol


    Original     		PDF 2SC4236 O-247 O-247) 2SC4236

    18-12 049 transistor

    Abstract: k 1094 transistor NE94432 0DD25 SIS 1124
    Text: NEC/ CALIFORNIA SbE J> • b427Mm DQOBSlb 2*15 BNECC NEC T NPN SILICON OSCILLATOR AND MIXER TRANSISTOR 7 NE94432 OUTLINE 32 TO-92 (Units in mm) HIGH GAIN BANDWIDTH PRODUCT: I t = 2000 M Hz TYP • M OUTLINE DIMENSIONS FEATURES • 3 LOW COLLECTOR TO BASE TIME CONSTANT:


    OCR Scan     		PDF b427Mm NE94432 NE94432 18-12 049 transistor k 1094 transistor 0DD25 SIS 1124

    cd 1191 cb

    Abstract: ic CD 4047 transistor kf 469 lex m01 001 Transistor MJE 5332 transistor BF 509 Transistor BF 479 Transistor 5332
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • NE696M01 OUTLINE DIMENSIONS Units in mm PACKAGE OUTLINE M01 HIGH fT: 14 GHz TYP at 3 V, 10 mA TO P VIEW • LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz — • HIGH GAIN: • *— 1.25 + 0.1 - *


    OCR Scan     		PDF NE696M01 NE696M01 OT-363 OT-23 696M01 05e-12 15e-12 22e-9 5e-12 cd 1191 cb ic CD 4047 transistor kf 469 lex m01 001 Transistor MJE 5332 transistor BF 509 Transistor BF 479 Transistor 5332