NPN Transistor 1500V
Abstract: transistor tl 187 187 npn transistor NPN Transistor 1500V 20a NTE238
Text: NTE238 Silicon NPN Transistor Color TV, Horizontal Output Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: D VCEX = 1500V D Safe Operating Area @ 50µs = 20A, 400V
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NTE238
NTE238
Cont00V,
NPN Transistor 1500V
transistor tl 187
187 npn transistor
NPN Transistor 1500V 20a
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NTE2301
Abstract: No abstract text available
Text: NTE2301 Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glassivated Base–Collector Junction
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NTE2301
NTE2301
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NTE163A
Abstract: No abstract text available
Text: NTE163A Silicon NPN Transistor Horizontal Deflection Description: The NTE163A is an NPN silicon transistor in a TO3 type case designed for use in large screen color deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Collector–Emitter Sustaining Voltage: VCEO sus = 700V
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NTE163A
NTE163A
100mA,
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NPN Transistor 1.5A 700V
Abstract: No abstract text available
Text: NTE2318 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2318 is a high–voltage, high–speed, switching NPN transistor with an internal damper diode in a TO218 type package. This device is specifically designed for use in large screen color deflection
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NTE2318
NTE2318
NPN Transistor 1.5A 700V
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transistor tl 430 c
Abstract: No abstract text available
Text: , Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 BDY46 Silicon NPN Power Transistor usA DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 300V(Min.) • DC Current Gain: hFE=20(Min.)@lc = 2A • Collector-Emitter Saturation Voltage:V CE <sat)=1.5V(Max)@lc =
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BDY46
transistor tl 430 c
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NTE127
Abstract: TL 187 TL 188 TRANSISTOR PNP
Text: NTE127 Germanium PNP Transistor Horizontal Output Amplifier Absolute Maximum Ratings: Collector–Base Voltage, VCBO Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320V
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NTE127
400mA
NTE127
TL 187
TL 188 TRANSISTOR PNP
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NPN Transistor 50A 400V
Abstract: NTE99 NPN 400V 40A npn darlington 400v 15a
Text: NTE99 Silicon NPN Transistor Darlington w/Base–Emitter Speed–up Diode Description: The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. This device is particularly
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NTE99
NTE99
NPN Transistor 50A 400V
NPN 400V 40A
npn darlington 400v 15a
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NTE53
Abstract: NTE52 220v DC MOTOR pwm NPN Transistor 15A 400V to3 NPN Transistor 10A 400V to3
Text: NTE53 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed power switching in inductive circuits where fall time is critical. This device is particularly suited for
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NTE53
NTE52
NTE53
220v DC MOTOR pwm
NPN Transistor 15A 400V to3
NPN Transistor 10A 400V to3
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NTE52
Abstract: No abstract text available
Text: NTE52 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed power switching in inductive circuits where fall time is critical. This device is particularly suited for
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NTE52
NTE52
100ns
150ns
400ns
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NTE2319
Abstract: No abstract text available
Text: NTE2319 Silicon NPN Transistor High Voltage, High Speed Power Switch Description: The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated
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NTE2319
NTE2319
800ns
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nte98
Abstract: No abstract text available
Text: NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly
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NTE98
NTE98
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150w darlington transistor to3 package
Abstract: NTE97 NPN Transistor 50A 400V NPN DARLINGTON 10A 500V transistor HV
Text: NTE97 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE97 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly
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NTE97
NTE97
150w darlington transistor to3 package
NPN Transistor 50A 400V
NPN DARLINGTON 10A 500V
transistor HV
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Untitled
Abstract: No abstract text available
Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ45A CASE OUTLINE: TO-204AA (TO-3) ENHANCEMENT MODE HIGH VOLTAGE FIELD EFFECT TRANSISTOR
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O-204AA
BUZ45A
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Untitled
Abstract: No abstract text available
Text: 16P IN S 0P PS7841-A15 SOLID STATE RELAY FOR OPTICAL DAA FEATURES_ DESCRIPTION_ • FOR OPTICAL DAA CIRCUIT Solid State Relay Photocoupler AC Input Response Diode Bridge Darlington Transistor PS7841 -A15 is a solid state relay for optical DAA (Data Access
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PS7841-A15
PS7841-A15-F3,
PS7841
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B68 zener diode
Abstract: 1B2 zener diode diode zener 600v 1a M114 T151 T810 T930
Text: 1 D I 3 0 0 M P - 0 5 0 3 0 0 A /< 7 - : Outline Drawings ii I- ai -J1J0-, h POWER TRANSISTOR MODULE : Features • h FE ^ S u • High DC Current Gain Krtî» : Applications • ^ General Purpose Inverter • Uninterruptible Power Supply • N C l f S e r v o & Spindle Drive for NC Machine Tools
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DI300MP-050
E82988
I95t/R89)
Shl50
B68 zener diode
1B2 zener diode
diode zener 600v 1a
M114
T151
T810
T930
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Untitled
Abstract: No abstract text available
Text: SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 15 AMPERE POWER TRANSISTOR NPN SILICON 300 and 400 VOLTS 175 WATTS The 2N6546 and 2N6547 transistors are designed for high voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and 220 volt line operated
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2N6546
2N6547
300ps,
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NT 407 F TRANSISTOR TO 220
Abstract: NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR NT 407 F power transistor mosfet 407 MGP20N14CL MOTOROLA TRANSISTOR TO-220
Text: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)
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MGP20N14CL/D
MGP20N14CL
MGP20N14CL/D*
NT 407 F TRANSISTOR TO 220
NT 407 F MOSFET TRANSISTOR
NT 407 F TRANSISTOR
NT 407 F power transistor
mosfet 407
MGP20N14CL
MOTOROLA TRANSISTOR TO-220
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Untitled
Abstract: No abstract text available
Text: 1 D I 4 M N - 1 2 4 A : Outline Drawings / < 7 - POW ER TRAIMSISTOR MODULE •¡ftJt: : Features • hFe*''i§i' High DC Current Gain * - Kl*ligE •isflfcW SiaiiEW fti : Applications • i/lffl'f > s t—9 General Purpose Inverter • Uninterruptible Power Supply
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E82988
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transistor B324
Abstract: B324 transistor b324 B-324 diode ZENER EJJ 1DI200ZN-120 M115
Text: 1DI200ZN-120 200A y < r7 - h : Outline Drawings 5 POWER TRANSISTOR MODULE •Features • hFE^i^i' High DC Current Gain KF*3J& : Applications • >/LEK • • NC —9 General Purpose Inyerter Uninterruptible Power Supply Servo & Spindle Drive for NC Machine Tools
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1DI200ZN-120
E82988
l95t/R89
Shl50
transistor B324
B324 transistor
b324
B-324
diode ZENER EJJ
M115
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Untitled
Abstract: No abstract text available
Text: SILICON SENSORS INC TS 5 F J Û H S 3 T 2 S □□□□3bb h NPN SILICON PHOTO DETECTOR Silicon Sensors SPT 15 is a high sensitivity N P N Planar Silicon Photo Transistor expressly designed for convenient application in th e tap e and card leaders, ch aracter recognition, industrial inspec
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solitron transistors
Abstract: Solitron Transistor U/25/20/TN26/15/850/solitron transistors
Text: ATOL© IN T R O D U C T IO N ^atitran Devices. Inc. Solitron E>evices, Inc. offers a comprehensive line of silicon semiconductor chips for Bipolar power transistors and planar diodes, as well as chips for MOS and Junction Field Effect Transistors. Working with the most sophisticated equipment, Solitron's experienced engineering
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Marking code b4 sod-123
Abstract: No abstract text available
Text: B0520W thru B0540W SURFACE MOUNT SCHOTTKY BARRIER DIODE REVERSE VOLTAGE – 20 to 40 Volts FORWARD CURRENT – 0.5 Ampere SOD-123 FEATURES • Low Forward Voltage Drop • High Conductance • Guard Ring Construction for Transient Protection SOD-123 Dim. Min.
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B0520W
B0540W
OD-123
OD-123
J-STD-020D
2002/95/EC
OD-323
OD-523
Marking code b4 sod-123
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N-1030
Abstract: Zener Diode B
Text: 1DI400MN-050 400A : Outline Drawings POWER TRANSISTOR MODULE : Features • hFE*f# i ' High DC Current Gain : Applications • i/LSK >*< — $ General Purpose Inverter • Uninterruptible Power Supply • N Mountingtorque*?9-4BkQ-0ffl Servo & Spindle Drive for NC Machine Tools
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1DI400MN-050
E82988
N-1030
Zener Diode B
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mosfet L 3055 motorola
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Pow er Field E ffect ransistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS RDS on = 0.15 OHM This advanced E-FET is a TMOS Medium Power MOSFET
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OT-223
MMFT3055E
mosfet L 3055 motorola
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