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    TRANSISTOR TL 430 C Search Results

    TRANSISTOR TL 430 C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TL 430 C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPN Transistor 1500V

    Abstract: transistor tl 187 187 npn transistor NPN Transistor 1500V 20a NTE238
    Text: NTE238 Silicon NPN Transistor Color TV, Horizontal Output Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: D VCEX = 1500V D Safe Operating Area @ 50µs = 20A, 400V


    Original     		PDF NTE238 NTE238 Cont00V, NPN Transistor 1500V transistor tl 187 187 npn transistor NPN Transistor 1500V 20a

    NTE2301

    Abstract: No abstract text available
    Text: NTE2301 Silicon NPN Transistor High Voltage Horizontal Output Description: The NTE2301 is a silicon NPN power transistor in a TO218 type package designed for use in large screen deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glassivated Base–Collector Junction


    Original     		PDF NTE2301 NTE2301

    NTE163A

    Abstract: No abstract text available
    Text: NTE163A Silicon NPN Transistor Horizontal Deflection Description: The NTE163A is an NPN silicon transistor in a TO3 type case designed for use in large screen color deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Collector–Emitter Sustaining Voltage: VCEO sus = 700V


    Original     		PDF NTE163A NTE163A 100mA,

    NPN Transistor 1.5A 700V

    Abstract: No abstract text available
    Text: NTE2318 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2318 is a high–voltage, high–speed, switching NPN transistor with an internal damper diode in a TO218 type package. This device is specifically designed for use in large screen color deflection


    Original     		PDF NTE2318 NTE2318 NPN Transistor 1.5A 700V

    transistor tl 430 c

    Abstract: No abstract text available
    Text: , Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 BDY46 Silicon NPN Power Transistor usA DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= 300V(Min.) • DC Current Gain: hFE=20(Min.)@lc = 2A • Collector-Emitter Saturation Voltage:V CE <sat)=1.5V(Max)@lc =


    Original     		PDF BDY46 transistor tl 430 c

    NTE127

    Abstract: TL 187 TL 188 TRANSISTOR PNP
    Text: NTE127 Germanium PNP Transistor Horizontal Output Amplifier Absolute Maximum Ratings: Collector–Base Voltage, VCBO Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320V


    Original     		PDF NTE127 400mA NTE127 TL 187 TL 188 TRANSISTOR PNP

    NPN Transistor 50A 400V

    Abstract: NTE99 NPN 400V 40A npn darlington 400v 15a
    Text: NTE99 Silicon NPN Transistor Darlington w/Base–Emitter Speed–up Diode Description: The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. This device is particularly


    Original     		PDF NTE99 NTE99 NPN Transistor 50A 400V NPN 400V 40A npn darlington 400v 15a

    NTE53

    Abstract: NTE52 220v DC MOTOR pwm NPN Transistor 15A 400V to3 NPN Transistor 10A 400V to3
    Text: NTE53 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed power switching in inductive circuits where fall time is critical. This device is particularly suited for


    Original     		PDF NTE53 NTE52 NTE53 220v DC MOTOR pwm NPN Transistor 15A 400V to3 NPN Transistor 10A 400V to3

    NTE52

    Abstract: No abstract text available
    Text: NTE52 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE52 is a silicon NPN transistor in a TO3 type package designed for high voltage, high–speed power switching in inductive circuits where fall time is critical. This device is particularly suited for


    Original     		PDF NTE52 NTE52 100ns 150ns 400ns

    NTE2319

    Abstract: No abstract text available
    Text: NTE2319 Silicon NPN Transistor High Voltage, High Speed Power Switch Description: The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. It is particularly suited for line–operated


    Original     		PDF NTE2319 NTE2319 800ns

    nte98

    Abstract: No abstract text available
    Text: NTE98 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE98 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly


    Original     		PDF NTE98 NTE98

    150w darlington transistor to3 package

    Abstract: NTE97 NPN Transistor 50A 400V NPN DARLINGTON 10A 500V transistor HV
    Text: NTE97 Silicon NPN Transistor HV Darlington Power Amp, Switch Description: The NTE97 is a silicon NPN Darlington transistor in a TO3 type package designed for high voltage, high–speed, power switching in inductive circuits where fall–time is critical. They are particularly


    Original     		PDF NTE97 NTE97 150w darlington transistor to3 package NPN Transistor 50A 400V NPN DARLINGTON 10A 500V transistor HV

    Untitled

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ45A CASE OUTLINE: TO-204AA (TO-3) ENHANCEMENT MODE HIGH VOLTAGE FIELD EFFECT TRANSISTOR


    Original     		PDF O-204AA BUZ45A

    NT 407 F TRANSISTOR TO 220

    Abstract: NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR NT 407 F power transistor mosfet 407 MGP20N14CL MOTOROLA TRANSISTOR TO-220
    Text: MOTOROLA Order this document by MGP20N14CL/D SEMICONDUCTOR TECHNICAL DATA Product Preview MGP20N14CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce on = 1.9 VOLTS 135 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)


    Original     		PDF MGP20N14CL/D MGP20N14CL MGP20N14CL/D* NT 407 F TRANSISTOR TO 220 NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR NT 407 F power transistor mosfet 407 MGP20N14CL MOTOROLA TRANSISTOR TO-220

    Untitled

    Abstract: No abstract text available
    Text: 16P IN S 0P PS7841-A15 SOLID STATE RELAY FOR OPTICAL DAA FEATURES_ DESCRIPTION_ • FOR OPTICAL DAA CIRCUIT Solid State Relay Photocoupler AC Input Response Diode Bridge Darlington Transistor PS7841 -A15 is a solid state relay for optical DAA (Data Access


    OCR Scan     		PDF PS7841-A15 PS7841-A15-F3, PS7841

    Untitled

    Abstract: No abstract text available
    Text: •I bbS3T31 QQSSMTfl STM « A P X N AMER PHIL IPS /DISCR ETE BSP108 b7E _y \ _ N-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a m iniature SOT223 envelope and intended


    OCR Scan     		PDF bbS3T31 BSP108 OT223 bb53c 0D2S501

    B68 zener diode

    Abstract: 1B2 zener diode diode zener 600v 1a M114 T151 T810 T930
    Text: 1 D I 3 0 0 M P - 0 5 0 3 0 0 A /< 7 - : Outline Drawings ii I- ai -J1J0-, h POWER TRANSISTOR MODULE : Features • h FE ^ S u • High DC Current Gain Krtî» : Applications • ^ General Purpose Inverter • Uninterruptible Power Supply • N C l f S e r v o & Spindle Drive for NC Machine Tools


    OCR Scan     		PDF DI300MP-050 E82988 I95t/R89) Shl50 B68 zener diode 1B2 zener diode diode zener 600v 1a M114 T151 T810 T930

    Untitled

    Abstract: No abstract text available
    Text: SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS 15 AMPERE POWER TRANSISTOR NPN SILICON 300 and 400 VOLTS 175 WATTS The 2N6546 and 2N6547 transistors are designed for high voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for 115 and 220 volt line operated


    OCR Scan     		PDF 2N6546 2N6547 300ps,

    Untitled

    Abstract: No abstract text available
    Text: 1 D I 4 M N - 1 2 4 A : Outline Drawings / < 7 - POW ER TRAIMSISTOR MODULE •¡ftJt: : Features • hFe*''i§i' High DC Current Gain * - Kl*ligE •isflfcW SiaiiEW fti : Applications • i/lffl'f > s t—9 General Purpose Inverter • Uninterruptible Power Supply


    OCR Scan     		PDF E82988

    transistor B324

    Abstract: B324 transistor b324 B-324 diode ZENER EJJ 1DI200ZN-120 M115
    Text: 1DI200ZN-120 200A y < r7 - h : Outline Drawings 5 POWER TRANSISTOR MODULE •Features • hFE^i^i' High DC Current Gain KF*3J& : Applications • >/LEK • • NC —9 General Purpose Inyerter Uninterruptible Power Supply Servo & Spindle Drive for NC Machine Tools


    OCR Scan     		PDF 1DI200ZN-120 E82988 l95t/R89 Shl50 transistor B324 B324 transistor b324 B-324 diode ZENER EJJ M115

    Untitled

    Abstract: No abstract text available
    Text: SILICON SENSORS INC TS 5 F J Û H S 3 T 2 S □□□□3bb h NPN SILICON PHOTO DETECTOR Silicon Sensors SPT 15 is a high sensitivity N P N Planar Silicon Photo Transistor expressly designed for convenient application in th e tap e and card leaders, ch aracter recognition, industrial inspec­


    OCR Scan     		PDF

    solitron transistors

    Abstract: Solitron Transistor U/25/20/TN26/15/850/solitron transistors
    Text: ATOL© IN T R O D U C T IO N ^atitran Devices. Inc. Solitron E>evices, Inc. offers a comprehensive line of silicon semiconductor chips for Bipolar power transistors and planar diodes, as well as chips for MOS and Junction Field Effect Transistors. Working with the most sophisticated equipment, Solitron's experienced engineering


    OCR Scan     		PDF

    N-1030

    Abstract: Zener Diode B
    Text: 1DI400MN-050 400A : Outline Drawings POWER TRANSISTOR MODULE : Features • hFE*f# i ' High DC Current Gain : Applications • i/LSK >*< — $ General Purpose Inverter • Uninterruptible Power Supply • N Mountingtorque*?9-4BkQ-0ffl Servo & Spindle Drive for NC Machine Tools


    OCR Scan     		PDF 1DI400MN-050 E82988 N-1030 Zener Diode B

    mosfet L 3055 motorola

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Pow er Field E ffect ransistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device MEDIUM POWER TMOS FET 1.7 AMP 60 VOLTS RDS on = 0.15 OHM This advanced E-FET is a TMOS Medium Power MOSFET


    OCR Scan     		PDF OT-223 MMFT3055E mosfet L 3055 motorola