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    TRANSISTOR TL 187 Search Results

    TRANSISTOR TL 187 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TL 187 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor tl 187

    Abstract: TL 187 360-2002 TL 187 TRANSISTOR TRANSISTOR 187 TRANSISTOR 187 datasheet Series TL
    Text: Series TL Ultraminiature «TO 5 transistor size» magnetic latching relays 28 V / 1 A APPLICATION SPECIFICATIONS MIL-R-39016/12 -/29 -/30 ESCC 3602-002 „ General characteristics N° of pole 2 Pdt 0,4 cm 3 Volume Mass 2 g with leads 38 mm[1.500] lenght 1,6 g with leads 4,75 mm[.187] lenght


    Original     		PDF MIL-R-39016/12 transistor tl 187 TL 187 360-2002 TL 187 TRANSISTOR TRANSISTOR 187 TRANSISTOR 187 datasheet Series TL

    74HC123A

    Abstract: HC123A transistor tl 187 TEL 5206 74hc123a national monostable multivibrator using cmos 54HC 74HC MONOSTABLE MULTIVIBRATOR USING TRANSISTOR HC123
    Text: MM54HC123A MM74HC123A Dual Retriggerable Monostable Multivibrator General Description The MM54 74HC123A high speed monostable multivibrators one shots utilize advanced silicon-gate CMOS technology They feature speeds comparable to low power Schottky TTL circuitry while retaining the low power and


    Original     		PDF MM54HC123A MM74HC123A 74HC123A HC123 HC123A transistor tl 187 TEL 5206 74hc123a national monostable multivibrator using cmos 54HC 74HC MONOSTABLE MULTIVIBRATOR USING TRANSISTOR

    IC 741 OPAMP

    Abstract: SAA 1251 7106CPL TDA2620 SAA1121 LM 4440 AUDIO AMPLIFIER CIRCUIT touch dimmer TC 306H TDA 2310 TDA 2060 7107CPL
    Text: Lineaire IC’s Lineaire IC’s dil to 99 dil 8 to 99 dil 18 to 78 to 99 dil 20 to 99 cer dip to 78 Wij leveren een groot aantal lineaire ic's uit voorraad. Kunt u een bepaald type niet vinden, aarzel dan niet ons telefonisch te raadplegen. Veelal kunnen wij u op korte


    Original     		PDF

    74hc423a

    Abstract: HC423A MM74HC423A 74HC C1995 MM54HC MM54HC423A MM74HC MM74HC423AJ 0v0550
    Text: MM54HC423A MM74HC423A Dual Retriggerable Monostable Multivibrator General Description The MM54 74HC423A high speed monostable multivibrators one shots utilize advanced silicon-gate CMOS technology They feature speeds comparable to low power Schottky TTL circuitry while retaining the low power and


    Original     		PDF MM54HC423A MM74HC423A 74HC423A HC423A MM74HC423A 74HC C1995 MM54HC MM74HC MM74HC423AJ 0v0550

    rfid Rc 522

    Abstract: MM74HC123AJ MM54HC123A
    Text: MM54HC123A,MM74HC123A MM54HC123A MM74HC123A Dual Retriggerable Monostable Multivibrator Literature Number: SNOS349A MM54HC123A MM74HC123A Dual Retriggerable Monostable Multivibrator General Description put pulse equation is simply PW e REXT (CEXT) where PW


    Original     		PDF MM54HC123A MM74HC123A MM74HC123A SNOS349A 74HC123A rfid Rc 522 MM74HC123AJ

    PCC104bct-nd

    Abstract: No abstract text available
    Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.


    Original     		PDF PTFA091503EL PTFA091503EL 150-watt, H-33288-6 84MHz PCC104bct-nd

    hitachi mosfet power amplifier audio application

    Abstract: transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI
    Text: C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION: • UHV / VHF Tuners


    Original     		PDF AmVC132 HVC133 HVC134 HVM131S HVM131SR HVM132 HVM132WK hitachi mosfet power amplifier audio application transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI

    MESFET Application

    Abstract: hitachi mosfet power amplifier audio application 2sk2685 spice 00E-12 hitachi mosfet audio application note Hitachi audio mosfet application booster gsm antenna hitachi discrete circuit diagram wireless video transmitter and re 2SK239A
    Text: C 1998 Dirk Plha HITACHI Hitachi Discrete Devices for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Discrete Devices for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION:


    Original     		PDF 49E-13 00E-01 00E-06 44E-13 HVC133 30E-12 27E-15 HVM132WK MESFET Application hitachi mosfet power amplifier audio application 2sk2685 spice 00E-12 hitachi mosfet audio application note Hitachi audio mosfet application booster gsm antenna hitachi discrete circuit diagram wireless video transmitter and re 2SK239A

    180NM cmos process parameters

    Abstract: Virtex-4 thermal resistance what the difference between the spartan and virtex Stratix II EP2S60 VIRTEX 4 LX200 8192X6 DSP48 spartan 6 DSP48 EP2S15 EP2S180
    Text: White Paper Stratix II vs. Virtex-4 Power Comparison & Estimation Accuracy Introduction This document compares power consumption and power estimation accuracy for Altera Stratix® II FPGAs and Xilinx Virtex-4 FPGAs. The comparison addresses all components of power: core dynamic power,


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    TRANSISTOR tl131

    Abstract: No abstract text available
    Text: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include


    Original     		PDF PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-36248-2 H-37248-2 TRANSISTOR tl131

    TRANSISTOR tl131

    Abstract: 100B100JW500X tl241 tl239 TRANSISTOR c104 c102 TRANSISTOR TMM4 A2322 c103 TRANSISTOR TL107 linear
    Text: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include


    Original     		PDF PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-37248-2 TRANSISTOR tl131 100B100JW500X tl241 tl239 TRANSISTOR c104 c102 TRANSISTOR TMM4 A2322 c103 TRANSISTOR TL107 linear

    HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E

    Abstract: hall effect sensor GH SC-59 HALL EFFECT Loctite 406 LT HALL SENSOR to-92 hall sensor Ultrasonic welding circuit
    Text: GENERAL INFORMATION HALL-EFFECT DEVICES: SOLDERING, GLUING, POTTING, ENCAPSULATING, and LEAD FORMING by Peter J. Gilbert Introduction The Hall effect, discovered by E. F. Hall in 1879, is the basis for all Hall-effect devices. When this physical effect is combined with modern integrated circuit IC


    Original     		PDF

    HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E

    Abstract: GH sc-59 to-92 hall sensor ultrasonic range meter IC Ultrasonic welding circuit transistor Common collector configuration thermoset plastics Application Note 27703 HALL EFFECT TO 92 leadframe
    Text: GENERAL INFORMATION HALL-EFFECT DEVICES: SOLDERING, GLUING, POTTING, ENCAPSULATING, and LEAD FORMING by Peter J. Gilbert Introduction The Hall effect, discovered by E. F. Hall in 1879, is the basis for all Hall-effect devices. When this physical effect is combined with modern integrated circuit IC


    Original     		PDF

    N140 ALLEGRO

    Abstract: Ultrasonic welding generator Allegro Hall-Effect ICs GH SC-59 Loctite 406 pressure low die bond sensor RTV HALL-EFFECT DEVICES SOLDERING, GLUING, POTTING, E FLEX THERMOSET COMPOUND TO-236A TRA-CON
    Text: Application Note 27703.1‡ GENERAL INFORMATION HALL-EFFECT DEVICES: SOLDERING, GLUING, POTTING, ENCAPSULATING, and LEAD FORMING by Peter J. Gilbert Introduction The Hall effect, discovered by E. F. Hall in 1879, is the basis for all Hall-effect devices. When this physical


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    2 x 20w amplifier mute

    Abstract: high end amplifier schematics LM audio power amplifier LM1876 operational amplifier discrete schematic multiple input audio amp 15-lead SIL IC 15w audio amplifier circuit diagram 2 x 20w amplifier LM1876TF TF15B
    Text: a t i o n a l S e m i c o n d u c t o r April 1995 LM 1876 OVCT'tWT'f? Audio Power Amplifier Series Dual 20W Audio P ow er A m plifier with M ute and S tandby M odes General Description Key Specifications The LM1876 is a stereo audio amplifier capable of deliver­


    OCR Scan     		PDF LM1876 LM1876, 20-3A 2 x 20w amplifier mute high end amplifier schematics LM audio power amplifier operational amplifier discrete schematic multiple input audio amp 15-lead SIL IC 15w audio amplifier circuit diagram 2 x 20w amplifier LM1876TF TF15B

    B0539

    Abstract: b0539c 539A
    Text: BD539, BD539A, BD539B, BD539C, BD539D NPN SILICON POWER TRANSISTORS Copyright «> 1997, Power Innovations LimHed, U K _ JUNE 1873 - R EVISED MARCH 1897 • Designed for Complementary Use with the BD540 Series •


    OCR Scan     		PDF BD539, BD539A, BD539B, BD539C, BD539D BD540 BD539 BD539A BD539B 8D539C B0539 b0539c 539A

    HC123A

    Abstract: No abstract text available
    Text: Semiconductor a l January 1988 MM54HC123A/MM74HC123A Dual Retriggerable Monostable Multivibrator General Description The MM54/74HC123A high speed monostable multivibra­ tors one shots utilize advanced silicon-gate CMOS tech­ nology. They feature speeds comparable to low power


    OCR Scan     		PDF MM54HC123A/MM74HC123A MM54/74HC123A HC123 HC123A

    4HC123A

    Abstract: 4HC123 HC123A
    Text: SEMICOND -CLOGIO 1QE D | bS01ia2 D0bSa04 1 I '4HC123A NATIONAL National Semiconductor MM54HC123A/MM74HC123Â Dual Retriggerable Monostable Multivibrator General Description The MM54/74HC123A high speed monostable multivibra­ tors one shots utilize advanced silicon-gate CMOS tech­


    OCR Scan     		PDF 4HC123A bS01ia2 D0bSa04 MM54HC123A/MM74HC123Â MM54/74HC123A HC123 1000p TL/F/5206-7 TL/F/5206-9 TL/F/5206-8 4HC123A 4HC123 HC123A

    TRANSISTOR BC 208

    Abstract: TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187
    Text: BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC BC 183L 184 184L 186 187 179 181 182 182L 183 172 173 174 177 178 167 168 169 170 171 135 154 157 158 159 114 132 147 148 149 107 108 109 110 113 •c m Z Z Z “0 -0 "0 "0 2


    OCR Scan     		PDF lbDT17flfl DDDDh43 O-106 O-92F to-02 melf-002. melf-006 to-237 TRANSISTOR BC 208 TRANSISTOR BC 158 TRANSISTOR BC 157 transistor BC-148 bc 106 transistor transistor BC 209 FOR TRANSISTOR BC 149 B BC 114 transistor transistor bc 209 b TRANSISTOR BC 187

    TL 188 TRANSISTOR PIN DIAGRAM

    Abstract: PEAK DETECTOR System on a chip TRANSISTOR CODE SA5
    Text: Philips Semiconductors Product specification Postamplifier with link status indicator DESCRIPTION SA5214 PIN CONFIGURATION The SA 5 2 1 4 is a 75M H z postamplifier system designed to accept low level high-speed signals. These signals are converted into a


    OCR Scan     		PDF SA5214 SA5214 SA5210, SA5211 SA5212 TL 188 TRANSISTOR PIN DIAGRAM PEAK DETECTOR System on a chip TRANSISTOR CODE SA5

    QPL-19500

    Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
    Text: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits


    OCR Scan     		PDF 2N6903 2N6903 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ QPL-19500 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760

    74hc123a

    Abstract: hc123a high speed comparator 74hc123a national 74HC HC123 MM54HC123A MM74HC MM74HC123A
    Text: & January 1988 Semiconductor MM54HC123A/MM74HC123A Dual Retriggerable Monostable Multivibrator General Description The MM54/74HC123A high speed monostable multivibra­ tors one shots utilize advanced silicon-gate CMOS tech­ nology. They feature speeds comparable to low power


    OCR Scan     		PDF MM54HC123A/MM74HC123A MM54/74HC123A HC123 HC123A 74hc123a high speed comparator 74hc123a national 74HC MM54HC123A MM74HC MM74HC123A

    4 pin optocoupler

    Abstract: AC 187 npn transistor TO 1 E72422 Transistor AC 187 k
    Text: MEC LONG CREEPAGE TYPE HIGH ISOLATION VOLTAGE 4 PIN OPTOCOUPLER L^ssiL2 FEATURES DESCRIPTION • PS2581L1 and PS2581L2 are optically coupled isolators containing a GaAs light emitting diode and an NPN silicon phototransistor in a plastic DIP Dual In-Line Package .


    OCR Scan     		PDF PS2581L1 PS2581L2 E72422 VDE0884 PS2581L1, 1000pcs/reel PS2581L2-1-E3 PS2581L2-1-E4 4 pin optocoupler AC 187 npn transistor TO 1 E72422 Transistor AC 187 k

    2N6898

    Abstract: 2N6897 36485 2N6798 TRANSISTOR C 557 B 2n6800 2N6901 IDM30 2N6904 qpl-19500
    Text: Standard Power M O SFETs File Number 1875 2N6897 Power M O S Field-Effect Transistors P-Channei Enhancement-Mode Power M O S Field-Effect Transistors 12 A, 100 V ros on : 0.3 0 TERMINAL DIAGRAM 3 o Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds


    OCR Scan     		PDF 2N6897 2N6897 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 MIL-S-19500/ 2N6898 36485 2N6798 TRANSISTOR C 557 B 2N6901 IDM30 2N6904 qpl-19500