MCT8 opto
Abstract: c1252 MCL601 MCT8 opto switch C1246 4N25 4N26 4N27 4N28 4N35
Text: 112 O p to iso lato rs A * * W A , ~ PACKAGE PRODUCT KEY OUTPUT FORM AT TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR TRANSISTOR MCT2 MCT2E MCT210 MCT26 MCT4 MCT4R* MCT6 A A A A C C B TRANSISTOR MCT66 B TRANSISTOR TRANSISTOR TRANSISTOR
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MCT210
MCT26
MCT66
C1255
10TT1.
MCT8 opto
c1252
MCL601
MCT8 opto switch
C1246
4N25
4N26
4N27
4N28
4N35
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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CA3083
Abstract: pspice high frequency transistor ca3096 transistor bf 760 NPN PNP Transistor Arrays 333E MM9710 2839E BF 949 transistor
Text: CA3096 and CA3083 Transistor Array SPICE Models TM July 1997 tle 9 30 nd 08 anr y E - MM9710 Introduction Model Performance This application note describes the SPICE transistor models for the bipolar devices that comprise the CA3096, and the CA3083 High Frequency NPN/PNP Transistor Arrays.
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CA3096
CA3083
MM9710
CA3096,
CH-1009
pspice high frequency transistor
transistor bf 760
NPN PNP Transistor Arrays
333E
MM9710
2839E
BF 949 transistor
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oz960
Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors
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KIA7900PI
TC7SH04FU
KIC7SH04FU
SC604*
KAC3301QN
M51943
KIA7042AP/AF
TC7SH08FU
KIC7SH08FU
LT1937
oz960
khb*9D5N20P
MB4213
KIA78*pI
MN1280
F10P048
KIA7812A
MJE13007
mb4213 equivalent
TRANSISTOR SMD N2 3j
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2n2222 2n5401 2n5551
Abstract: TPQ6700 TPQA05 TPQ6502 TPQ5400 2N2907 NPN Transistor TPQ2907A TPQ3724 TPQ2221 TPQ2222
Text: SERIES TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS S PRAGUE SERIES TPQ quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. Shown are iO NPN types, 15 PNP types, and 12 NPN/PNP complementary pairs.
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14-pin
2N2222
2N2907
TPQ6600
2N2483
2N3738
TPQ6600A
2N3799
TPQ6700
2N3904
2n2222 2n5401 2n5551
TPQA05
TPQ6502
TPQ5400
2N2907 NPN Transistor
TPQ2907A
TPQ3724
TPQ2221
TPQ2222
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULES- SQQ300BA60 U L;E 76102 M ) is a Darlington power transistor module with a , high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode (trr: 200ns). The mounting base of the module is electrically isolated
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SQQ300BA60
200ns)
hrEfe750
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Philips film capacitors 27 pf
Abstract: trimmer 3-30 pf TL 2222 BLW60C Philips film capacitors polystyrene b32s philips carbon film resistor z670
Text: bSE D • TllOôBb Gabassi 214 « P H I N BLW60C PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile, industrial and m ilita ry transmitters w ith a nominal supply voltage o f 12,5 V. The transistor is resistance stabilized
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BLW60C
00b35b2
7Z772S6
7Z77255
Philips film capacitors 27 pf
trimmer 3-30 pf
TL 2222
BLW60C
Philips film capacitors polystyrene
b32s
philips carbon film resistor
z670
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PDF
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CI Z 131 R-10
Abstract: BLW87 h a 431 transistor transistor L6
Text: N AMER PHILIPS/DISCRETE tlE » • bbS3T31 0051474 72T H A P X BL-VVO A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f, and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is
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bbS3T31
OT-123.
7Z67567
CI Z 131 R-10
BLW87
h a 431 transistor
transistor L6
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MJE2955
Abstract: 2N3645 bc557 BC307 BC212
Text: 87’ Pf WDUCT PROFILE TO-92 TO-92SP TO-237 TO-220 SMALL SIGNAL TRANSISTOR SMALL SIGNAL TRANSISTOR HIGH CURRENT TRANSISTOR POWER TRANSISTOR HI-SIIMCERITY MICROELECTRONICS CORP. COMPANY PROFILE H i-S in ce rity M icroelectronics Corp. is a manu The facturer
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O-92SP
O-237
O-220
O-928>
iO051
MJE2955
2N3645
bc557
BC307
BC212
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PDF
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BLY88A
Abstract: A41E BLY88 W1032 Paver Components
Text: PHILIPS INTERNATIONAL MAINTENANCE TYPE 41E D • TllGÔSb DQSTRS? 1 « P H IN II BLY88A A T - 3 3 - 0 1 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage of 13,5 V. The transistor is resistance stabilized and is
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DQ57R27
BLY88A
to-16
BLY88A
A41E
BLY88
W1032
Paver Components
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motorola transistor ignition
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN SILICON POWER TRANSISTOR
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BU323AP
340D-01
motorola transistor ignition
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E67349
Abstract: TLP330
Text: TOSHIBA TLP330 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP330 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP330 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode connected inverse
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TLP330
TLP330
150mA.
150mA
5000Vrms
UL1577,
E67349
220kH
E67349
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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E67349
Abstract: TLP630
Text: TOSHIBA TLP630 TOSHIBA PHOTOCOUPLER PROGRAMMABLE CONTROLLERS GaAs IRED & PHOTO-TRANSISTOR TLP630 Unit in mm AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA TLP630 consists of a photo-transistor optically coupled to two gallium arsenide infrared emitting diode
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TLP630
TLP630
5000Vrms
UL1577
E67349
11-7A8
961001EBC2
E67349
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transistor tic 106
Abstract: Philips 2222-030 38109 heatsink catalogue BLV935 chip die npn transistor
Text: Philips Semiconductors Product specification UHF power transistor BLV935 FEATURES DESCRIPTION • Emitter ballasting resistors for an optimum temperature profile NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has
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BLV935
OT273
OT273
OT273.
110fl2ti
transistor tic 106
Philips 2222-030
38109
heatsink catalogue
BLV935
chip die npn transistor
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PDF
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E67349
Abstract: TLP572
Text: TOSHIBA TLP572 TOSHIBA PHOTOCOUPLER PROGRAMMABLE CONTROLLERS IRED & PHOTO-TRANSISTOR TLP572 AC / DC - INPUT MODULE SOLID STATE RELAY The TOSHIBA TLP572 consists of a darlington connected photo transistor optically coupled to a gallium arsenide infrared emitting
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TLP572
TLP572
2500Vrms
UL1577,
E67349
11-7A8
100msÂ
E67349
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PDF
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E67349
Abstract: TLP572
Text: TLP572 TOSHIBA Photocoupler IRED & Photo-Transistor TLP572 Programmable Controllers AC/DC-Input Module Solid State Relay Unit: mm The TOSHIBA TLP572 consists of a darlington connected photo-transistor optically coupled to a gallium arsenide infrared emitting
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TLP572
TLP572
UL1577,
E67349
11-7A8
E67349
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BC337 rbe
Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P diode 1N4001 voltage limitations
Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.
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BU323AP
BU323AP
r14525
BU323AP/D
BC337 rbe
BC337 figure
1N4001
BC337
BU323P
diode 1N4001 voltage limitations
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PDF
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Untitled
Abstract: No abstract text available
Text: GaAs IRED & PHOTO-TRANSISTOR TLP124 TENTATIVE DATA PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE TELECOMMUNICATION The TOSHIBA MINI FLAT COUPLER TLP124 is a srrnll outline coupler, suitable for surface mount assembly. TLP124 consists of a photo transistor, optically
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TLP124
TLP124
3750Vrms
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P 131 GB
Abstract: No abstract text available
Text: GaAs IRED a PHOTO-TRANSISTOR TLP121 OFFICE MACHINE. PROGRAMMABLE CONTROLLERS. AC/DC-INPUT MODULE. TELECOMMUNICATION. The TOSHIBA MINIFLAT COUPLER TLP121 is a smr.ll outline coupler, suitable for surface mount assembly. TLP121 consists of a photo transistor- optically
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TLP121
TLP121
3750Vrms
P 131 GB
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tlp721
Abstract: No abstract text available
Text: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR TO SH IB A TECHNICAL TLP721 DATA GaAs IRED & PHOTO-TRANSISTOR TLP721 OFFICE MACHINE. HOUSEHOLD USE EQUIPMENT. SOLID STATE RELAY. SWITCHING POWER SUPPLY. The TOSHIBA TLP721 consists of a photo-transistor optically coupled
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TLP721
TLP721)
TLP721
UL1577,
E67349
BS415
BS7002
EN60950)
SS4330784
4000Vrms
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PDF
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TLP572
Abstract: E67349
Text: TLP572 TOSHIBA Photocoupler IRED & Photo-Transistor TLP572 Programmable Controllers AC/DC-Input Module Solid State Relay Unit: mm The TOSHIBA TLP572 consists of a darlington connected photo-transistor optically coupled to a gallium arsenide infrared emitting
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TLP572
TLP572
UL1577,
E67349
11-7A8
E67349
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PDF
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74286
Abstract: UL1577 E67349 TLP733 TLP733F TLP734 TLP734F
Text: TOSHIBA TLP733FJLP734F TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP733F, TLP734F OFFICE MACHINE SWITCHING POWER SUPPLY The TOSHIBA TLP733F and TLP734F consists of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six
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TLP733FJLP734F
TLP733F,
TLP734F
TLP733F
TLP734F
TLP733
TLP734.
UL1577,
E67349
EN60065
74286
UL1577
E67349
TLP734
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PDF
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BLX92A
Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
Text: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe
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BLX92A
BLX92A
BLX92
em 179
sfe 5,5 ma
IEC134
transistor IR 944
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