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    TRANSISTOR TIC 226 Search Results

    TRANSISTOR TIC 226 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR TIC 226 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    226AE

    Abstract: PN2222N
    Text: TO -226AE Packaging Configuratio n: Figur e 1.0 TAPE and REEL OPTION FSCINT Label sampl e See Fig 2.0 for various Reeling Styles FAIRCHILD SEMICONDUCTOR CORPORATION HTB:B LOT: CBVK741B019 QTY: 10000 NSID: PN2222N


    Original     		PDF O-226AE -226AE CBVK741B019 PN2222N D9842 F63TNR 375mm 267mm 375mm 226AE PN2222N

    transistor A1 HB

    Abstract: PN2222N EO70 CBVK741B019 F63TNR transistor k 0247 ad label information on the box
    Text: TO-226AE Tape and Reel Data TO -226AE Packaging Conf iguratio n: Fi gur e 1.0 TAPE and REEL OPTION FSCINT Label sampl e See Fig 2.0 for va rious FAIRCHIL D S EMICONDUCTOR CORPORATION L OT: CBVK741B019 PN2222N NSID: D/C1: QTY: Reeling Styles HTB:B 10000 SP EC:


    Original     		PDF O-226AE -226AE CBVK741B019 PN2222N D9842 F63TNR 41B019 PN222N F63TNR transistor A1 HB PN2222N EO70 CBVK741B019 transistor k 0247 ad label information on the box

    TO-226-AE

    Abstract: transistor A1 HB
    Text: TN6716A TN6716A CB TO-226 E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2A. Sourced from Process 38. See TN6715A for characteristics. Absolute Maximum Ratings*


    Original     		PDF TN6716A O-226 TN6715A TO-226-AE transistor A1 HB

    EO70

    Abstract: TO-226-AE transistor A1 HB CBVK741B019 F63TNR PN2222N TN6726A TN6727A TIC 1160 inner bulk box labeling
    Text: TN6727A TN6727A CB TO-226 E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1A. Sourced from Process 77. See TN6726A for characteristics. Absolute Maximum Ratings*


    Original     		PDF TN6727A O-226 TN6726A EO70 TO-226-AE transistor A1 HB CBVK741B019 F63TNR PN2222N TN6727A TIC 1160 inner bulk box labeling

    FPN630

    Abstract: FPN630A PN2222N CBVK741B019 F63TNR TO-226-AE D26Z weig S0480 226AE
    Text: FPN630 / FPN630A FPN630 FPN630A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PC. Absolute Maximum Ratings* Symbol


    Original     		PDF FPN630 FPN630A FPN630 O-226 FPN630A PN2222N CBVK741B019 F63TNR TO-226-AE D26Z weig S0480 226AE

    CBVK741B019

    Abstract: F63TNR FPN560 FPN560A PN2222N
    Text: FPN560 / FPN560A FPN560 FPN560A C TO-226 B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NA. Absolute Maximum Ratings* Symbol


    Original     		PDF FPN560 FPN560A FPN560 O-226 CBVK741B019 F63TNR FPN560A PN2222N

    transistor tic 226

    Abstract: CBVK741B019 F63TNR FPN330 FPN330A PN2222N
    Text: FPN330 / FPN330A FPN330 FPN330A C TO-226 B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NB. Absolute Maximum Ratings* Symbol


    Original     		PDF FPN330 FPN330A FPN330 O-226 transistor tic 226 CBVK741B019 F63TNR FPN330A PN2222N

    FPN660A

    Abstract: CBVK741B019 F63TNR FPN660 PN2222N pnp Saturation transistor to-226
    Text: FPN660 / FPN660A FPN660 FPN660A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process PA. Absolute Maximum Ratings* Symbol


    Original     		PDF FPN660 FPN660A FPN660 O-226 FPN660A CBVK741B019 F63TNR PN2222N pnp Saturation transistor to-226

    CBVK741B019

    Abstract: F63TNR FPN430 FPN430A PN2222N
    Text: FPN430 / FPN430A FPN430 FPN430A C TO-226 B E PNP Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 2.0 A continuous. Sourced from Process PB. Absolute Maximum Ratings* Symbol


    Original     		PDF FPN430 FPN430A FPN430 O-226 CBVK741B019 F63TNR FPN430A PN2222N

    CBVK741B019

    Abstract: F63TNR FPN530 FPN530A PN2222N TO-226-AE 226AE
    Text: FPN530 / FPN530A FPN530 FPN530A C TO-226 B E NPN Low Saturation Transistor These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0 A continuous. Sourced from Process NC. Absolute Maximum Ratings* Symbol


    Original     		PDF FPN530 FPN530A FPN530 O-226 CBVK741B019 F63TNR FPN530A PN2222N TO-226-AE 226AE

    TN2905A

    Abstract: TN-29-07 CBVK741B019 F63TNR PN2222N PN2907A TN2907A TN2905
    Text: TN2905A TN2905A TN2907A C TO-226 B E PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absolute Maximum Ratings*


    Original     		PDF TN2905A TN2907A) O-226 PN2907A TN2905A TN-29-07 CBVK741B019 F63TNR PN2222N TN2907A TN2905

    TN2222

    Abstract: No abstract text available
    Text: TN2219A TN2219A TN2222A C TO-226 B E NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings*


    Original     		PDF TN2219A TN2222A) O-226 PN2222A TN2222

    TN2222

    Abstract: TN2219A CBVK741B019 F63TNR PN2222A PN2222N TN2222A transistor A1 HB
    Text: TN2219A TN2219A TN2222A C TO-226 B E NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maximum Ratings*


    Original     		PDF TN2219A TN2222A) O-226 PN2222A TN2222 TN2219A CBVK741B019 F63TNR PN2222N TN2222A transistor A1 HB

    transistor bel 100

    Abstract: CBVK741B019 F63TNR PN2222N TN3440A
    Text: TN3440A TN3440A C TO-226 B E NPN General Purpose Amplifier This device is designed for use in horizontal driver, class A off-line amplifier and off-line switching applications. Sourced from Process 36. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF TN3440A O-226 transistor bel 100 CBVK741B019 F63TNR PN2222N TN3440A

    CBVK741B019

    Abstract: F63TNR PN2222N TN3440A
    Text: TN3440A TN3440A C TO-226 B E NPN General Purpose Amplifier This device is designed for use in horizontal driver, class A off-line amplifier and off-line switching applications. Sourced from Process 36. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF TN3440A O-226 CBVK741B019 F63TNR PN2222N TN3440A

    transistor TD-100 le

    Abstract: pn222 CBVK741B019 F63TNR PN2222N TN3019A ad label information on the box
    Text: TN3019A TN3019A C TO-226 B E NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 500 mA and collector voltages up to 80 V. Sourced from Process 12. Absolute Maximum Ratings*


    Original     		PDF TN3019A O-226 transistor TD-100 le pn222 CBVK741B019 F63TNR PN2222N TN3019A ad label information on the box

    CBVK741B019

    Abstract: F63TNR PN2222N TN4033A
    Text: TN4033A TN4033A C TO-226 B E PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA and collector voltages up to 70V. Sourced from Process 67. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF TN4033A O-226 CBVK741B019 F63TNR PN2222N TN4033A

    IAO5 Sharp

    Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
    Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The


    OCR Scan     		PDF Q60103- thS10 to3530 to4600 to4600 IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071

    BF199 RF

    Abstract: bF199 transistor BF199 BF240 TO226AA
    Text: BF199 CASE 29-04, STYLE 21 TO-92 TO-226AA M A X IM U M RATINGS R a tin g S ym b o l V alue U n it Co Ilector-E m itter Voltage VCEO 25 Vdc Collector-Base Voltage VcBO 40 Vdc Vdc Em itter-Base Voltage VEBO 4.0 Collector Current - Continuous ic 100 m Adc Total Device D issipation @ T a = 25°C


    OCR Scan     		PDF BF199 O-226AA) BF240 BF199 RF bF199 transistor TO226AA

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA One Watt High Voltage Transistor NPN Silicon COLLECTOR 3 1 EMITTER CASE 29-05, STYLE 1 TO-92 TO-226AE MAXIM UM RATINGS Rating Symbol Value Collector-Emltter Voltage v CEO 300 Vdc Collector-Base Voltage VCBO 300 Vdc Emitter-Base Voltage


    OCR Scan     		PDF O-226AE) MPSW10

    PD58

    Abstract: No abstract text available
    Text: R F H RF2105L MICRO DEVICES HIGH POWER LINEAR UHF AM PLIFIER T y p ic a l A p p lic a tio n s • 900 MHz ISM Band Applications • Driver Stage for Higher Power Applications • 400 MHz Industrial Radios • Commercial and Consumer Systems • Digital Communication Systems


    OCR Scan     		PDF RF2105L RF2105L 16-lead 100pF 100pF PD58

    KAG TRANSISTOR

    Abstract: No abstract text available
    Text: BSS89 CASE 29-04, STYLE 7 TO-92 TO-226AA M AXIM UM RATINGS Rating Symbol Value Unit D ra in -S o u rc e V o lta g e VDSS 200 Vdc G a te -S o u rc e V o lta g e Vg s ±20 V dc m Adc 'd m 400 800 Pd 350 mW m W -’X D ra in C u rre n t — C o n tin u o u s (1 1


    OCR Scan     		PDF BSS89 O-226AA) KAG TRANSISTOR

    Cross Reference power MOSFET

    Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
    Text: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258


    OCR Scan     		PDF T0-204AA T0-204AE T0-220AB T0-220AC Cross Reference power MOSFET irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M G Y 25N 120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO -264 25 A @ 90 C 38 A @ 25“C


    OCR Scan     		PDF