Untitled
Abstract: No abstract text available
Text: MÛi€Sr! Preliminary Specifications M an A M P com pany 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V 2 .0 0 SOT-23 Features • 1 5 dB N o ise F ig u ie a t 0 5 m A • 13 dB G a i l a t 1 G H z • 14 GH z fp • Low C o s tP la s tic P a ck a g e
|
OCR Scan
|
MA4T6310
OT-23
4T6310
|
PDF
|
2N4863
Abstract: PG1050 PG1051 PG1052 PG1053 PG1054 PG1055 PG1056 PG1057 PG1066
Text: •M k / 2 ÔA oi:4.4 P I ELE CT RO NICS INC Ho * ¡M T E R IM D E | D 0 M 3 S T 2 0DDD144 S | ». nELEXTRonics r ninc. B U L L E T IN S u b j e c t to R e v i s i o n ' :.T V * POWER TRANSISTOR ENGINEERING BULLETIN^ y e 3 3 p IW i t h o u t N o tic e -, o s "
|
OCR Scan
|
PG1050
PG1066,
PG1051
PG1052
2N4863
PG1053
PG1054
PG1055
PG1056
PG1057
PG1066
|
PDF
|
sw 2604 ic
Abstract: 2603 dual transistor ic sw 2604 Sw 2604 2603L
Text: DATA SHEET PHOTOCOUPLERS PS2603, PS2604, PS2603L, PS2604L HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR TYPE 6 PIN PHOTOCOUPLER — N E P O C S e rie s — DESCRIPTION P S 2603, P S 2 604 and P S 2 603 L, P S 2 6 0 4 L are o p tic a lly co u p le d is o la to rs c o n ta in in g a G a A s light em ittin g d io d e
|
OCR Scan
|
PS2603,
PS2604,
PS2603L,
PS2604L
sw 2604 ic
2603 dual transistor
ic sw 2604
Sw 2604
2603L
|
PDF
|
ujt firing circuits of scr
Abstract: UJT APPLICATION scr firing circuit UJT triggering circuit ujt timer CIRCUIT applications of ujt unijunction application note ujt free Complementary UJT D5K1 ujt transistor
Text: Complementary Unijunction Transistor □ e1 D5K1 1 C O M PLEM EN TA R Y U N IJU N C T IO N T h e G e n e ra l E le c tr ic D 5K 1 C o m p le m e n ta ry U n iju n c tio n T r a n s is t o r is a silic o n p la n a r , m o n o lith ic in te g r a te d c ir c u it. I t h a s u n iju n c tio n c h a r a c te r is tic s w ith
|
OCR Scan
|
-15aC
I0V01TI
ujt firing circuits of scr
UJT APPLICATION
scr firing circuit UJT triggering circuit
ujt timer CIRCUIT
applications of ujt
unijunction application note
ujt free
Complementary UJT
D5K1
ujt transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107
|
OCR Scan
|
TIP100/101/102
TIP101
TIP102
TIP100
|
PDF
|
AF106
Abstract: 40HHZ AF108
Text: TG~l :-LTTT^- IT- 1-— - 5SC D m 0 2 3 S b Q S G G G H G 4 7 S « S I E G ; PNP Germanium RF Transistor SIEMENS A K T I E N G E S E L L S C H A F T . „ ~ T ' - l f - * ! ' A F 106 D - 04047 for input, mixer, and oscillator stages up to 260 MHz
|
OCR Scan
|
Q60106-X106
120ms
23SbOS
AF106
40HHZ
AF108
|
PDF
|
IAO5 Sharp
Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The
|
OCR Scan
|
Q60103-
thS10
to3530
to4600
to4600
IAO5 Sharp
free transistor equivalent book 2sc
siemens transistor asy 27
Diode BAY 61
TRANSISTOR BJ 131-6
tesla typ 202 thyristor
Tesla
z1072
HALL EFFECT 21E
z1071
|
PDF
|
transistor IR 324 C
Abstract: transistor selection guide
Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency d B Gain Optimum Figure, G a (d B ) Noise Noise Figure, N F opt at Optimum F re q u e n c y , f (G H z ) Typical Output Power and Gain vs. Frequency
|
OCR Scan
|
NE46134
NE85634
NE46134
NE46734
NE68018-T1
transistor IR 324 C
transistor selection guide
|
PDF
|
GP500
Abstract: ACY33 bnsu germanium af transistors Germanium Transistor transistor ACY PNP
Text: ACY33 PIMP Transistor fo r A F-driver and pow er stages The ACY 33 is a germanium PNP alloyed transistor in a case 1 A 3 DIN 41871 similar TO —1 . All leads are electrically insulated from the case. The collector terminal is indicated by a red dot on the rim of the case.
|
OCR Scan
|
ACY33
ACY33
--Y33
Q60103
GP500
bnsu
germanium af transistors
Germanium Transistor
transistor ACY PNP
|
PDF
|
triac tic 236
Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Text: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD
|
OCR Scan
|
1S2835
1S2836
1S2837
1S2838
1SS123
1SS220
1SS221
1SS222
1SS223
2SA811A
triac tic 236
SCR U 537
MP25 transistor
transistor su 312
GA1L32
3 pin mini mold transistor
2SJ19
FA114M
2SA1611
Z 103 TRIAC
|
PDF
|
transistor tic 106 N
Abstract: No abstract text available
Text: S AMSUNG ELECTRONICS INC 42E MPSA42 D B OQG^ObS 1 E3SMÚK NPN EPITAXIAL SILICON TRANSISTOR s 2r \ - \ s ' HIGH VOLTAGE TRANSISTOR • C o lle c to r-E m ltte r V oltage: VCEo =300V • C o lle c to r D is s ip a tio n : P 0 m a x = 6 2 5 m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
|
OCR Scan
|
MPSA42
transistor tic 106 N
|
PDF
|
UN 2911
Abstract: No abstract text available
Text: ¡si H a r r i <33 semiconductor HFA3046, HFA3096, HFA3127, HFA3128 s Ultra High Frequency Transistor Array July 1995 Features Description • NPN Transistor fT .8GHz • NPN Current Gain (h FE) .70
|
OCR Scan
|
HFA3046,
HFA3096,
HFA3127,
HFA3128
HFA3127
HFA3128
HFA3046
UN 2911
|
PDF
|
level shifter . CMOS to TTL
Abstract: msi cr 430 SSC2000 ttl inverter operation PF516
Text: EPSON P F 5 1 6 -0 7 SSC2000 Series Standard Cell 'Built-in Analog Circuit 'Internal Two Power Supplies Level Shifter 'W ide Operating Voltage: 0.9 V to 6.0 V 'U p to 11,000 gates • DESCRIPTION The S S C 2000 series is a C M O S standard cell w ith low -threshold m anufacturing process providing low voltage
|
OCR Scan
|
pf516-07
SSC2000
level shifter . CMOS to TTL
msi cr 430
ttl inverter operation
PF516
|
PDF
|
DB 22 AR transistor smd
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor The MRF6401 is designed for Class A common emitter, linear power amplifiers in the 1.0 -2 .0 GHz frequency range. It has been specifically designed for use in Personal Communications Network PCN base station and
|
OCR Scan
|
MRF6401
MRF6401PHT/D
IS21I
IS12I
DB 22 AR transistor smd
|
PDF
|
|
BUK106-50US
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general purpose switch for automotive systems and other applications.
|
OCR Scan
|
BUK106-50L/S
BUK106-50LP/SP
BUK106-50L
8UK106-50S
BUK106-50US
BUK106-50L/S
|
PDF
|
BUK106-50L
Abstract: BUK106-50S diode 06-50S
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK106-50L/S Logic level TOPFET_ BUK106-50LP/SP DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general
|
OCR Scan
|
BUK106-50L/S
BUK106-50LP/SP
BUK106-50L
BUK106-50S
IPS/IPS25
BUK106-50S
diode 06-50S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Product Specification Philips Semiconductors PowerMOS transistor BUK104-50L/S Logic level TOPFET_ BUK104-50LP/SP DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic envelope, intended as a general
|
OCR Scan
|
BUK104-50L/S
BUK104-50LP/SP
BUK104-50L
BUK104-50S
BUK104-50L/S
UK104-50
|
PDF
|
4-1070
Abstract: 45N10E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TM O S E -FE T ™ P o w er Field E ffe c t T ran sisto r T O -2 4 7 w ith Is o la te d M ounting H ole MTW45N10E M otorola Preferred Device TMOS POWER FET 45 AMPERES 100 VOLTS N-Channel Enhancement-Mode Silicon Gate
|
OCR Scan
|
|
PDF
|
3004x
Abstract: SIEMENS B 58 451 GE 639 transistor 2114D transistor bfx 73 STATIC RAM 2114 Q2114 tic 2116 M
Text: ESC D fl23SbOS 0G04737 fl ¡SIEG r - j/ 'Z 3 B FX 55 NPN Silicon Transistor for VHF Output Stages in Broadband Amplifiers SIEMENS A K T IE NÖES EL LS CH AF BFX 55 is an epitaxial NPN silicon planar transistor in a TO 39 case 5 C 3 DIN 41873 . The collector has been electrically connected to the case. The transistor is especially suitable for
|
OCR Scan
|
fl23SbOS
0G04737
Q60206-X55
BFX55
23SbOS
150mA
3004x
SIEMENS B 58 451
GE 639 transistor
2114D
transistor bfx 73
STATIC RAM 2114
Q2114
tic 2116 M
|
PDF
|
LG 21 fs 4
Abstract: TRANSISTOR FS 10 TM
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level TOPFET BUK106-50US BUK106-50LP/SP For maintenance only. Do not use for design-in. DESCRIPTION Monolithic temperature and overload protected logic level power MOSFET in a 5 pin plastic
|
OCR Scan
|
BUK106-50US
BUK106-50LP/SP
BUK106-50L
BUK106-50S
BUK106-50L/S
BUK106-50L/S
LG 21 fs 4
TRANSISTOR FS 10 TM
|
PDF
|
mm glass lens phototransistor
Abstract: wo f6 DIODE
Text: SIEMENS BPX43 SILICON NPN PHOTOTRANSISTOR Package Dimensions in Inches mm .244 (6.2) .212 (5.4) .570(1451 .492 (12.5) -U ¿0 0 (5 .1 ) 9 (4.8) V 0.100,-(2.54)'- T 0.01 * f6 (0.45) Base '‘Collector 0 .18 9(4.6) 0.181 (4.6) I-106, w .220 (5.6) .206 (5.3)
|
OCR Scan
|
BPX43
I-106,
mm glass lens phototransistor
wo f6 DIODE
|
PDF
|
transistor tic 106 N
Abstract: bly power transistor transistor tic 226 transistor SE 431
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA D e sig n e r’s Data Sheet M GW 1 2 N 1 2 0 D Insulated G ate Bipolar Transistor with Anti-Parallel Diode Motorola Prafarrad Davlca N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO -247 12 A @ 90 C 20 A @ 25 C
|
OCR Scan
|
|
PDF
|
HA11123
Abstract: in60p diode IN60P transistor c114 est HA-11123 TOKO fi transformer MV4FLC-20000AG Intermediate frequency transformer 455 TOKO IF Transformer 10,7MHz HIA11123
Text: HA11123 FM /AM Radio Receiver System Hitachi HIA11123 is an IC system that has been developed for FM/AM radios and modular stereos. It has the following functions and features. • FUNCTIONS FM • IF Amp. • Signal meter drive circuit • A F C circuit • FM demodulation signal amplification circuit
|
OCR Scan
|
HA11123
HIA11123
RMC-4256AAM)
180pF
130pF
YACF-21943A
CFU-60A)
42110N)
RMN-41749N)
HA11123
in60p diode
IN60P
transistor c114 est
HA-11123
TOKO fi transformer
MV4FLC-20000AG
Intermediate frequency transformer 455
TOKO IF Transformer 10,7MHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of September 1994 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN microwave power transistor FEATURES LLE18300X QUICK REFERENCE DATA D iffu se d e m itte r b a lla s tin g re s is to rs
|
OCR Scan
|
125002/00/03/pp12
|
PDF
|