RO4003
Abstract: 20-PIN HS350
Text: DATA SHEET GaAs INTEGRATED CIRCUIT µPG2054K GaAs MMIC DBS 4 x 2 IF SWITCH MATRIX FEATURES • High isolation : ISL = 40 dB TYP. @ f = 0.95 to 2.15 GHz, VCONT = +5.0 V/0 V • Control voltage : VCONT H = +3.0 to +5.5 V (+5.0 V TYP.) : VCONT (L) = −0.5 to +0.5 V (0 V TYP.)
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PG2054K
20-pin
PG2054K-E3
PG2054K-E3-A
RO4003
HS350
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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20-PIN
Abstract: HS350 RO4003
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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Untitled
Abstract: No abstract text available
Text: GaAs HBT INTEGRATED CIRCUIT PG2301T5L POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The PG2301T5L is GaAs HBT MMIC for power amplifier which were developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed
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PG2301T5L
PG2301T5L
12-pin
PG10559EJ01V0DS
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12-PIN
Abstract: HS350
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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UPG2301T5L
Abstract: HS350 UPG2301T5L-E2-A
Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社
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PG2301T5L
IR260
WS260
PG10559JJ01V0DS
HS350
UPG2301T5L
HS350
UPG2301T5L-E2-A
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Untitled
Abstract: No abstract text available
Text: GaAs HBT INTEGRATED CIRCUIT PG2301T5L POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The PG2301T5L is GaAs HBT MMIC for power amplifier which were developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed
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PG2301T5L
PG2301T5L
12-pin
PG10559EJ01V0DS
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12-PIN
Abstract: HS350 PG2301T5L
Text: GaAs HBT INTEGRATED CIRCUIT PG2301T5L POWER AMPLIFIER FOR BluetoothTM Class 1 DESCRIPTION The μPG2301T5L is a GaAs HBT MMIC power amplifier for Bluetooth Class 1, and other ISM band applications. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in
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PG2301T5L
PG2301T5L
12-pin
HS350
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs HBT INTEGRATED CIRCUIT µPG2301T5L POWER AMPLIFIER FOR Bluetooth TM Class 1 DESCRIPTION The µPG2301T5L is GaAs HBT MMIC for power amplifier which were developed for Bluetooth Class 1. This device realizes high efficiency, high gain and high output power by using InGaP HBT. This device is housed in
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PG2301T5L
PG2301T5L
12-pin
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PG2020
Abstract: PG2011 TO46 PG1083 PG2102 2N4863 PG1050 PG1051 PG1010 PG1053
Text: i. 2 AMP - 160 VOLT 4 WATT 90 MHz TO-46 /// ¿samsivmgsm ? «? v TO-46 ! p-i-M' IfV-iV, • Linear hFE from 10 mA to 2 amps • I H 1 • H B R TO -4 6 TO -4 6 T O -4 6 TO -4 6 TO -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 T O -4 6 TO -4 6
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2N4862
PG1001
PG1002
PG1003
PG1004
PG1005
PG1006
PG1007
PG1008
PG1009
PG2020
PG2011
TO46
PG1083
PG2102
2N4863
PG1050
PG1051
PG1010
PG1053
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2N4863
Abstract: PG1050 PG1051 PG1052 PG1053 PG1054 PG1055 PG1056 PG1057 PG1066
Text: •M k / 2 ÔA oi:4.4 P I ELE CT RO NICS INC Ho * ¡M T E R IM D E | D 0 M 3 S T 2 0DDD144 S | ». nELEXTRonics r ninc. B U L L E T IN S u b j e c t to R e v i s i o n ' :.T V * POWER TRANSISTOR ENGINEERING BULLETIN^ y e 3 3 p IW i t h o u t N o tic e -, o s "
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PG1050
PG1066,
PG1051
PG1052
2N4863
PG1053
PG1054
PG1055
PG1056
PG1057
PG1066
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pg2004
Abstract: PG2011 pg2001 PG2006
Text: O a P I ELECTRONICS INC ^3 DE • G n ^ S I S 0000004 Q • Linear hFE from 10 mA to 2 amps • Low saturation voltage at maximum collector current • High frequency ft = 90 MHz typical • High voltage, BVCeoi i to 160 volts «■’ S T 1 B hF E hFE
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2N4862
PG1001
PG1002
PG1003
PG1004
PG1005
PG1006
PG1007
PG1008
PG1009
pg2004
PG2011
pg2001
PG2006
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2N4863
Abstract: PG1060 PG1050 PG1051 PG1052 PG1053 PG1054 PG1055 PG1056 PG1057
Text: 3* * / 20A- • 01:4.4 : - D P I ELECTRONICS INC 1 _ 20 1 IV I * DE | □DM3S‘i2- 0D0D14M S „ . T E R I M 1 . : POWER TRANSISTOR ENGINEERING BULLETIN PIRGO ? _ -S u b je c t ~7Z3 3 . - . . . B U L L E T I N ^ to R e v i s i o n
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000014M
PG1050
PG1066,
PG1051
PG1052
2N4863
PG1053
PG1054
PG1055
PG1060
PG1056
PG1057
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