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    TRANSISTOR T07 Search Results

    TRANSISTOR T07 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T07 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PDTA144

    Abstract: transistor t07 PDTA144E
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTA144EU PNP resistor-equipped transistor Product specification Supersedes data of 1997 Sep 09 File under Discrete Semiconductors, SC04 1998 May 19 Philips Semiconductors Product specification PNP resistor-equipped transistor


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    PDF M3D102 PDTA144EU MAM135 PDTA144EU OT323) SCA60 115104/1200/04/pp8 PDTA144 transistor t07 PDTA144E

    Untitled

    Abstract: No abstract text available
    Text: nc. AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 2N* •*» -1 NPN SILICON ANNULAR TRANSISTOR H."K *|«, Jji •MAXIMUM RATINGS o.soa Ruing Collector-Emitter VoltageCollector-Bale Voltage Emitter-Base Vottage


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    PDF 100MHz) 140kHz) 500MHz)

    2N2708

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 November 1999 INCH-POUND MIL-PRF-19500/302C 1 August 1999 SUPERSEDING MIL-S-19500/302B 20 January 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN,


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    PDF MIL-PRF-19500/302C MIL-S-19500/302B 2N2708, MIL-PRF-19500. T0-72) 2N2708

    log conformance dual npn

    Abstract: NPN Monolithic Transistor Pair
    Text: LS318 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems Log Conformance Monolithic Dual NPN The LS318 is a monolithic pair of NPN transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and is ideal for use in logging applications.


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    PDF LS318 T0-78 log conformance dual npn NPN Monolithic Transistor Pair

    t07 transistor

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D APX bbS3T31 0028832 T07 BLU30/28 • UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor primarily intended for use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and emitter ballasting resistors for an optimum temperature profile


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    PDF bbS3T31 BLU30/28 BLU30/28 OT119) t07 transistor

    BFQ42

    Abstract: w7 transistor transistor w7 IRF 502 TRANSISTOR BLW29 transistor j18 Si NPN c25a f0pf philips bfq42
    Text: P H IL IP S El b5E D INTERNATIONAL 711002b G0b2bD2 3 b l • P H I N BFQ42 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in cl ass-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V . The transistor is resistance stabilized and is


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    PDF 711002b BFQ42 BFQ42 BLW29 7Z77622 7Z77623 7Z77624 w7 transistor transistor w7 IRF 502 TRANSISTOR transistor j18 Si NPN c25a f0pf philips bfq42

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF 3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    BUK455-600B

    Abstract: BUK455 600B
    Text: N AI1ER P H I LI PS /D I SC RE T E bTE D • bbS3^31 003QbbS Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode tield-effect power transistor in a plastic envelope. The device is intended fcr use in Switched Mode Power Supplies


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    PDF D030bbs BUK455-600B -T0220AB BUK455 600B

    2N4839

    Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i


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    PDF 2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716

    Untitled

    Abstract: No abstract text available
    Text: Al BF 173 NFN SILICON PLANAR EPITAXIAL TRANSISTOR M IC R O EEEL— EE CD " T R O r s i I S CASE T0-72J THE BF173 IS AN NFN SILICON PLANAR EPITAXIAL TRANSISTOR INTENDED FOR USE IN VIDEO IF AMPLIFIERS AND PARTICULAR FOR THE OUTPUT STAGES. ABSOLUTE MAXIMUM RATINGS


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    PDF T0-72J BF173 200mA 09g4g3 35MHz

    2N5302 EB

    Abstract: 2N1463 2n4271
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 D O D O D ^ fi ■ General Transistor Corporation CASE TO-3,TO-39 lc MAX = 3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3


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    PDF SaD01 2N37S9 2N3790 2N3792 2N4398 2N4399 2N4902 2N4903 2N4904 2N4905 2N5302 EB 2N1463 2n4271

    MHQ6100

    Abstract: IC AL 6001
    Text: MOTOROLA SC XSTRS/R F Mt E D b3b?2SM 00^5457 b •MOTb MOTOROLA S E M IC O N D U C T O R i TECHNICAL DATA MHQ6100A DM0 Quad Small-Signal Transistor Suffixes: HX, HXV ii/ t u r Processed per MIL-S-19500/xxx NPN/PNP Com plem entary Pair QUAD TRANSISTOR NPN/PNP SILICON


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    PDF MHQ6100A MIL-S-19500/xxx O-116) MHQ6100 IC AL 6001

    cb pj 47 diode

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b^E J> bbS3T31 DD3227fl 070 H A P X Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor _ LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors


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    PDF bbS3T31 DD3227fl LFE15600X cb pj 47 diode

    transistor t07

    Abstract: Transistor B 886 t07 transistor PDTA144 PDTA144E
    Text: Philips Semiconductors Objective specification PNP resistor-equipped transistor PDTA144EU FEATURES • Built-in bias resistors R1 and R2 typ. 47 k ii each • Simplification of circuit design • Reduces number of components and board space. APPLICATIONS


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    PDF PDTA144EU OT323) OT323 PDTC144EU. PDTA144EU transistor t07 Transistor B 886 t07 transistor PDTA144 PDTA144E

    Untitled

    Abstract: No abstract text available
    Text: PD - 9.1033A International ËëlRectffier IRGP450U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency cun/e


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    PDF IRGP450U O-247AC 4A554S2 2040b

    2n189

    Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
    Text: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits


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    PDF 2G101* 2G102* 2G103* 2G109 2G220 2G221 2G222 2G223 2G224 2n189 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN2701 ~RN2706 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2701, RN2702, RN2703, RN2704, RN2705, RN2706 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • Including Two Devices in USV (U ltra Super Mini Type with. 5


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    PDF RN2701 RN2706 RN2701, RN2702, RN2703, RN2704, RN2705, RN2701 RN2702

    c6073

    Abstract: IC LM7912 LM7909 LM7905 CZ LM7915 LM7905 8 pin LM7908 LM7908 voltage regulator ic LM79xx voltage regulator ic LM7900
    Text: LM 7900 Series 3-Terminal Negative O utput Voltage Regulators 1Semiconductor t fea tu res' [ P IN ARRA N G EM EN T" No External Components Required Internal Thermal Overload Protection Internal Short-Circuit Current Limiting Output Transistor Safe-Axea Compensation


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    PDF LM7900 LM7800 -120Hz 37n4fl2 c6073 IC LM7912 LM7909 LM7905 CZ LM7915 LM7905 8 pin LM7908 LM7908 voltage regulator ic LM79xx voltage regulator ic

    transistor t07

    Abstract: t07 transistor
    Text: SIEMENS BCR 519 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit •Built in bias resistor R-|=4.7kil _GL ET Ordering Code Pin Configuration XKs UPON INQUIRY 1 =B Package II CO O Marking BCR 519 LU II CVJ


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    PDF OT-23 53SbQS transistor t07 t07 transistor

    Untitled

    Abstract: No abstract text available
    Text: - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Description CECC Ceramic Surface Mount Dual Transistor Dual device in CSM Ceramic Surface Mount Dual device in CSM 50004-017 50004-017 50004-017 50004-017 50004-133 50004-133 50003-021 50003-021 Polarity Package lc_cont


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