B1329
Abstract: transistor B1010 transistor a935 transistor b1329 transistor b1330 A1482 a935 a935 transistor transistor b1332 transistor a934
Text: Transistors TO -92L • TO -92LS • MRT TO-92L is a high power version of TO-92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application T0-92L T0-92LS Pc W (Ta=25°C )
|
OCR Scan
|
-92LS
O-92L
O-92LS
O-92L.
T0-92L
T0-92LS
A1902
B1595
B1596
2SC4722
B1329
transistor B1010
transistor a935
transistor b1329
transistor b1330
A1482
a935
a935 transistor
transistor b1332
transistor a934
|
PDF
|
2SB1333
Abstract: 2SD2006 2SD2005 2SD2010 2SD2008 2SA1861 2SD2011 2SB1306 2sd2159 2SB1482
Text: Transistors TO-92L •T0-92LS • MRT TO-92L is a high power version of TO -92 and TO-92LS is a slimmed TO-92L. MRT is a 1.2W package power taped transistor designed for use with an automatic placement machine. Package Application T0-92L I T0-92LS | MRT Part Nò.
|
OCR Scan
|
O-92L
T0-92LS
O-92L
O-92LS
O-92L.
2SA1819
2SB1333
2SD2006
2SD2005
2SD2010
2SD2008
2SA1861
2SD2011
2SB1306
2sd2159
2SB1482
|
PDF
|
2N5770
Abstract: T0-92A T092A
Text: 2N5770 NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 is NPN silicon planar epitaxial transistor designed for small signal high frequency amplifiers and oscillators. I CASE T0-92A EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltiage
|
OCR Scan
|
2N5770
2N5770
T0-92A
625mW
300mW
60MHz
-3-00C4C9
3MHS321
B0kfe947y
T0-92A
T092A
|
PDF
|
2N5770
Abstract: T0-92A MICRO ELECTRONICS ltd transistor
Text: 2N5770 NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 is NPN silicon planar epitaxial transistor designed for small signal High frequency amplifiers and oscillators. 1 CASE T0-92A EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltiage
|
OCR Scan
|
2N5770
T0-92A
625mW
300mW
60MHz
-3-00B4g0
T0-92A
MICRO ELECTRONICS ltd transistor
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CRO MPS8097 NPN SILICON TRANSISTOR T0-92A DESCRIPTION MPS8097 is NPN silicon planar epitaxial transistor designed fo r general purpose applications. •»» EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage
|
OCR Scan
|
MPS8097
T0-92A
MPS8097
200mA
350mW
4351llector-Emitter
Oct-96
100mA
100MHz
|
PDF
|
TRANSISTOR 2341
Abstract: T0-92A MPS8097
Text: IVI SILICON TRANSISTOR T0-92A DESCRIPTION MPS8097 is NPN silicon planar epitaxial transistor designed fo r general purpose applications. ? •»» EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
|
OCR Scan
|
MPS8097
T0-92A
200mA
350mW
100pA
Oct-96
100mA
100MHz
Width300
TRANSISTOR 2341
T0-92A
|
PDF
|
146R
Abstract: CL146 T0-92B
Text: CL146 NPN A F LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR G EN ERA L DESCRIPTION T0-92B The CL146 is a NPNsilicon planar epitaxial transistor in plastic package designed for hearing aids, watches, paging systems and other equipment where small size is of paramount importance.
|
OCR Scan
|
CL146
T0-92B
30Hz-15KHz
x10-4
3fl0822t
146R
|
PDF
|
c 8550 transistor
Abstract: 8550 ecb
Text: T0-92B G EN ER A L D ESC R IP T IO N :Tlie 0 0 5 0 is an NPN epitaxial silicon planar transistor designed for use in the au d io ou tp u t stage and converter/inverter circuits. C om plem entary to 8550. T0-92B M A X IM U M R A T IN G S (Note 1) M axim um Temperatures
|
OCR Scan
|
T0-92B
33mW/Â
25mW/Â
100mA
Boxfe477,
c 8550 transistor
8550 ecb
|
PDF
|
STA92N
Abstract: STC42N T0-92N
Text: STA92N Semiconductor PNP Silicon Transistor Descriptions • High voltage application Features • High collector-emitter voltage : VCEO=-300V • Complementary pair with STC42N Ordering Information Type NO. Marking Package Code STA92N STA92 T0-92N Outline Dimensions
|
Original
|
STA92N
-300V
STC42N
STA92
T0-92N
KSD-T0C029-001
STA92N
STC42N
T0-92N
|
PDF
|
transistor BC 945
Abstract: BC 945 transistor lc 945 p transistor BC 945 p lc 945 transistor transistor 2 FC 945 2sc 945 p transistor transistor 2sc 945 transistor LC 945 T0-92B
Text: 2SC 945 NPN SILICON PIANAR EPITAXIAL TRANSISTOR CASE T0-92B 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RY TO THE PNP TYPE 2SA733. ABSOLUTE MAXIMUM RATINGS C ollector-B ase V oltage C o llecto r-E m itter V oltage
|
OCR Scan
|
2sa733.
t0-92b
100mA
200mA
250mW
transistor BC 945
BC 945 transistor
lc 945 p transistor
BC 945 p
lc 945 transistor
transistor 2 FC 945
2sc 945 p transistor
transistor 2sc 945
transistor LC 945
|
PDF
|
transistor mps3704
Abstract: MPS3704 MPS3706 IC600 MPS3705
Text: nataSheet MPS3704 MPS3705 MPS3706 Central Sem iconductor Corp. SILICON NPN TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-92 CASE (EBC) Manufacturers of World Class Discrete Semiconductors DESCRIPTION
|
OCR Scan
|
MPS3704
MPS3705
MPS3706
T0-92
MPS3704
MPS3706
MPS3705
transistor mps3704
IC600
|
PDF
|
C2N3704
Abstract: 2N3704 2N3706 2n3705 transistor 2n3704 2n3704 transistor 2N3704 datasheet
Text: Datasheet Central 2N3704 2N3705 2N3706 Sem iconductor Corp. SILICON NPN TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-92 CASE ( EC B ) Manufacturers of World Class Discrete Semiconductors DESCRIPTION
|
OCR Scan
|
2n3704
2n3705
2n3706
t0-92
2N3706
2N37Q5
2N3704
C2N3704
transistor 2n3704
2n3704 transistor
2N3704 datasheet
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BF 224 CASE T0-92E BF224 is an NPN silicon planar epitaxial transistor designed for-general purpose high frequency oscillator, amplifier,and mixer applications. CEB C BE ABSOLUTE MAXIMUM RATINGS 45V 30V 4V 50mA 250mW -55 to +150°C Collector-Base Voltage VCBO
|
OCR Scan
|
T0-92E
BF224
250mW
3-8P3363;
|
PDF
|
FET 2N5459
Abstract: transistor 5457 fet 2n5457 2n5458 2n5457 2n5459 FET 2N5458 transistor 2N5458 transistor 2N5457 fet junction n-channel transistor
Text: CRO 2N5458 2N5459 N-CHANNEL JUNCTION FET DESCRIPTION T0-92DD 2N 5457,8.9 is N-Channel Junction Field Effect Transistor designed for VHF/UHF amplifiers and mixer. DSC ABSOLUTE MAXIMUM RATINGS Draiu-Source Voltage VDS 25V Drain Current ID 25mA Gate Current ÍG
|
OCR Scan
|
2N5458
2N5459
T0-92DD
300mW
2N5457
FET 2N5459
transistor 5457
fet 2n5457
FET 2N5458
transistor 2N5458
transistor 2N5457
fet junction n-channel transistor
|
PDF
|
|
|
BF224
Abstract: G510
Text: BF 224 CASE T0-92E BF224 is an NPN silicon planar epitaxial transistor designed for-general purpose high frequency oscillator, amplifier,and mixer applications. CEB C SE ABSOLUTE MAXIMUM RATINGS 45V 30V 4V 50mA 250mW -55 to +150°C Collector-Base Voltage VCBO
|
OCR Scan
|
BF224
T0-92E
250mW
100jiA
Boxi9477,
3-0033G3,
3-00022t
G510
|
PDF
|
2SK19
Abstract: transistor 2sk19 2SK19BL 2sk19-bl
Text: CRO 2SK19 N-CHANNEL SILICON FET CASE T0-92DD DESCRIPTION 2SK19 is N-channel silicon planar field effect transistor designed for FM tuner and VHF amplifier applications. DSG ABSOLUTE MAXIMUM RATINGS Gain-Drain Voltage Gate Current Total Power Dissipation @ T a=25°C
|
OCR Scan
|
2SK19
2SK19
T0-92DD
200mW
2SK19-Y
2SK19-BL
transistor 2sk19
2SK19BL
2sk19-bl
|
PDF
|
2n2711
Abstract: 2N2924 2n3394 2N3397 2N2925 transistor 2n3391 2N3396 TRANSISTOR MPS 2N2923 2N2716
Text: MPS/2N6573 thru' 6576 and similar types NPN SILICON TRANSISTOR DESCRIPTION The above types are NPN silicon planar epitaxial transistors for use in A F small amplifiers and direct coupled circuits. Their maximum power I6O111W at Ta = 25°C . dissipation CASE T0-92A
|
OCR Scan
|
MPS/2N6573
I6O111W
T0-92A
T0-92B
MPS/2N2711
MPS/2N27I2
12pFiiÂ
MPS/2N2716
MPS/2N2923
MPS/2N2924
2n2711
2N2924
2n3394
2N3397
2N2925
transistor 2n3391
2N3396
TRANSISTOR MPS
2N2923
2N2716
|
PDF
|
2N3415
Abstract: MPS3414 MPS3415 2N3414 2N3416 2N3417 MPS3416 MPS3417 3414 TRANSISTOR 2n3415 transistor
Text: Datasheet 2N3414 2N3415 2N3416 2N3417 MPS3414 'MPS34.15 MPS3416 MPS3417 NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-92 CASE* M anufacturers of W orld C lass Discrete S em iconductors
|
OCR Scan
|
2N3414
MPS3414
2N3415
MPS3415
2N3416
MP53416
2N3417
MPS3417
2N3414,
MPS3414
MPS3415
MPS3416
MPS3417
3414 TRANSISTOR
2n3415 transistor
|
PDF
|
T0-92B
Abstract: No abstract text available
Text: 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RY TO THE PNP TYPE 2SA733. CASE T0-92B <cy I !I • ABSOLUTE MAXIMUM RATINGS ECB Collector-Base Voltage VCBO 60V Collector-Emitter Voltage VCEO
|
OCR Scan
|
2SC945
2SA733.
T0-92B
100mA
200mA
250mW
BOX69477
|
PDF
|
BC556-BC558
Abstract: BC556.BC558 BC558
Text: BC556 - BC558 PNP EPITAXIAL PLANAR TRANSISTOR Features • · · Ideal for Switching and AF Amplifier Applications Divided into Current Gain subgroups Complementary NPN Types Available BC546 thru BC548 E A C Mechanical Data · · · · Case: T0-92, Plastic
|
Original
|
BC556
BC558
BC546
BC548)
T0-92,
MIL-STD-202,
BC557
BC558
BC556-BC558
BC556.BC558
|
PDF
|
BF224
Abstract: No abstract text available
Text: CASE T0-92E BF224 is an NPN silicon planar epitaxial transistor designed for-general purpose high frequency oscillator, amplifier,and mixer applications. CEB C SE ABSOLUTE MAXIMUM RATINGS 45V 30V 4V 50mA 250mW -55 to +150°C Collector-Base Voltage VCBO Collector-Emitter Voltage
|
OCR Scan
|
BF224
T0-92E
250mW
100ma
|
PDF
|
2SK19Y
Abstract: 2SK19
Text: CRO 2SK19 N-CHANNEL SILICON FET CASE T0-92DD DESCRIPTION 2SK19 is N-channel silicon planar field effect transistor designed for FM tuner and VHF amplifier applications. DSG ABSOLUTE MAXIMUM RATINGS Gain-Drain Voltage Gate Current Total Power Dissipation @ T a= 2 5 °C
|
OCR Scan
|
2SK19
T0-92DD
2SK19
200mW
2SK19-Y
2SK19-BL
2SK19Y
|
PDF
|
pin diagram of transistor BC548
Abstract: BC548 ,BC558 pin diagram of transistor BC558 BC546-BC548 BC548 npn BC547 collector characteristic curve bc548 bc558
Text: BC546 - BC548 NPN EPITAXIAL PLANAR TRANSISTOR Features • · · Ideal for Switching and AF Amplifier Applications Divided into Current Gain Subgroups Complementary PNP Types Available BC556 - BC558 E A TO-92 B C Mechanical Data · · · · Case: T0-92, Plastic
|
Original
|
BC546
BC548
BC556
BC558)
T0-92,
MIL-STD-202,
BC547
BC548
pin diagram of transistor BC548
BC548 ,BC558
pin diagram of transistor BC558
BC546-BC548
BC548 npn
BC547 collector characteristic curve
bc548 bc558
|
PDF
|
transistor 2sk19
Abstract: 2SK19Y 2sk19 2sK19 FET transistor 2sk Scans-0012719 2SK19BL 2SK19 GR 2SK19-BL FET 2SK19
Text: CRO DESCRIPTION 2SK19 N-CHANNEL SILICON FET CASE T0-92DD 2SK19 is N-channel silicon planar field effect transistor designed for FM tuner and VHF amplifier applications. DSG ABSOLUTE MAXIMUM RATINGS Gain-Drain Voltage Gate Current Total Power Dissipation @ T a= 2 5 °C
|
OCR Scan
|
2SK19
2SK19
T0-92DD
200mW
-100jiA
2SK19-Y
2SK19-BL
transistor 2sk19
2SK19Y
2sK19 FET
transistor 2sk
Scans-0012719
2SK19BL
2SK19 GR
2SK19-BL
FET 2SK19
|
PDF
|
