TRANSISTOR T 927 Search Results

TRANSISTOR T 927 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR T 927 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
telefunken IC Abstract: BFP280 Text: BFP 280 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features	Original	PDF	D-74025 telefunken IC BFP280
NPN transistor mhz s-parameter Abstract: transistor c 2316 Text: S 852 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, low current, low voltage, high gain, 50 Ohm transistor for 945 MHz cordless telephone, pager, and low current UHF remote control applications. Features D Low supply voltage	Original	PDF	D-74025 NPN transistor mhz s-parameter transistor c 2316
telefunken transistor Abstract: No abstract text available Text: BFP 182 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For low noise and high-gain broadband amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features D Low power applications	Original	PDF	D-74025 telefunken transistor
telefunken IC 121 Abstract: No abstract text available Text: S 822 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, low current, low voltage, high gain, 50 Ohm transistor for 945 MHz cordless telephone, pager, and low current UHF remote control applications. Features D Low noise figure	Original	PDF	D-74025 telefunken IC 121
kf 8715 Abstract: fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E HFA3101 Text: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array July 1995 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI	Original	PDF	HFA3101 10GHz HFA3101 10GHz) 390nH 825MHz 900MHz 75MHz 76MHz kf 8715 fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E
Untitled Abstract: No abstract text available Text: BFP 181 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, high gain broadband amplifiers. Features D Low noise figure D High power gain 2 3 1 4 94 9279 Marking: 18 Plastic case SOT 143 1 = Collector; 2 = Emitter; 3 = Base; 4 = Emitter	Original	PDF	D-74025
MA 2831 Abstract: No abstract text available Text: BFR 181 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, high gain broadband amplifiers. Features D Low noise figure D High power gain 1 2 3 94 9280 Marking: 181 Plastic case SOT 23 1 = Collector; 2 = Base; 3 = Emitter	Original	PDF	D-74025 MA 2831
BFR 182 transistor Abstract: BFR 67 Transistor BFR 67 Text: BFR 182 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, high gain broadband amplifiers. Features D Low noise figure D High power gain 1 2 3 94 9280 Marking: 182 Plastic case SOT 23 1 = Collector; 2 = Base; 3 = Emitter	Original	PDF	D-74025 BFR 182 transistor BFR 67 Transistor BFR 67
Transistor BFR 67 Abstract: No abstract text available Text: BFR 183 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, high gain broadband amplifiers. Features D Low noise figure D High power gain 1 2 3 94 9280 Marking: RH Plastic case SOT 23 1 = Collector; 2 = Base; 3 = Emitter	Original	PDF	D-74025 Transistor BFR 67
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	PDF	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	PDF	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

transistor ITT 2907 Abstract: transistor itt 975 MC 931 transistor 24GHz UHF transistor band pass filter 2GHz 7812 a Text: Ü Î H U S E M I C O N D U C T O R U A R R HFA3101 I S Gilbert Cell UHF Transistor Array Ju ly 1995 Features Description • High Gain Bandwidth Product fT .10GHz The HFA3101 is an all N PN transistor array configured as a • High Pow er Gain Bandwidth P r o d u c t .5GHz	OCR Scan	PDF	HFA3101 HFA3101 10GHz 15dBc 28dBc 22dBc 76MHz 825MHz 50MHz transistor ITT 2907 transistor itt 975 MC 931 transistor 24GHz UHF transistor band pass filter 2GHz 7812 a
Untitled Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE bbS3^31 DOSISSS ‘IbO BLW98 b^E D IAPX U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers o f T V transposers and transmitters in band IV-V, as well as for driver stages in tube systems.	OCR Scan	PDF	BLW98 7Z78110
ic TT 2222 Abstract: transistor tt 2222 philips carbon film resistor carbon resistor TT 2222 npn TT 2222 BLW98 transistor blw98 Text: PHILIPS INTERNATIONAL bSE D • PHIN 711Dfl5b 00b3432 124 JL BLW98 U.H.F. LINEAR POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear u.h.f. amplifiers o f T V transposers and transmitters in band IV-V, as well as fo r driver stages in tube systems.	OCR Scan	PDF	711005b 00b3432 BLW98 D0b344D ic TT 2222 transistor tt 2222 philips carbon film resistor carbon resistor TT 2222 npn TT 2222 BLW98 transistor blw98
philips carbon film resistor Abstract: blw98 transistor carbon resistor BLW98 Text: N AMER PHILIPS/DISCRETE bTE D □ DS'iSBS ‘ibD BLW98 b b S B 'm IAPX A U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear u.h.f. amplifiers o f T V transposers and transmitters in band IV-V, as well as fo r driver stages in tube systems.	OCR Scan	PDF	BLW98 bb53131 philips carbon film resistor blw98 transistor carbon resistor BLW98
Untitled Abstract: No abstract text available Text: 7m07h DD1S0S1 R77 Ordering number: EN 3178 LB1721M No.3178 Monolithic Digital IC SAiYO Thermal Head-Use, 8-Channel, Transistor Array i O verview The LB1721M is an 8-channel transistor array th a t has a low output saturation voltage and can be driven by a CMOS IC. It is especially suited for use in therm al head, LED drive applications.	OCR Scan	PDF	7m07h LB1721M LB1721M 3036B 9279TA QQ15052
pmi dac08 Abstract: DAC08 Text: A N A L O G . E Ü D E V I C E S / P M I D I V S b E D • O ô l b f l O S MAT-03 0 Q G T 3 4 Ö 1 ■ LOW NOISE, MATCHED, _ DUAL PNP TRANSISTOR P r e c ip it in M o i i o l i t h i c s h ic . FEATURES • • • • • • • • Dual Matched PNP Transistor	OCR Scan	PDF	MAT-03 100pV 190MHz DAC-08, 992mA 008mA pmi dac08 DAC08
RU901 Abstract: No abstract text available Text: S ~p > y 7> $ /Transistors RU901 R U 9 0 1 J K fîrth7 >'>'^dr Transistor Unit (Composite Transistor) / \ '7 7 ? 7 >~f / Buffer Amplifier • El/Dimensions (Unit : mm) 1) I 5 -y $ 7 n 7\|g\|g&« 2 U S tF m , 2) A 2 K A "7 7 2 1 t- O .S ± O .I lO.SS 0.95	OCR Scan	PDF	RU901 SC-74 V/10m 100MHz RU901
Untitled Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5010 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION T h e 2 S C 5 0 1 0 is an NPN e p ita xia l silico n tra n s is to r d e s ig n e d fo r use in low no ise and sm a ll sig n a l a m p lifie rs from	OCR Scan	PDF	2SC5010
transistor 2S D 716 Abstract: motorola C 547 MRF848 Epsilam-10 motorola MN transistor V145M transistor rf m 1104 Text: M O T O R O L A SC Ì X S T R S / R F> 6367254 MOTOROLA SC "öi <XSTRS/R F DE \|b3ti75SM 007^271 4 89D 79271 D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF848 A d v a n c e Information 60 W The R F Line 800-960 MHz RF POWER TRANSISTOR N P N SILICO N RF P O W E R T R A N S IS T O R	OCR Scan	PDF	b3ti75SM MRF848 transistor 2S D 716 motorola C 547 MRF848 Epsilam-10 motorola MN transistor V145M transistor rf m 1104
NE32584C-T1 Abstract: nec 3435 transistor am 4428 Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.	OCR Scan	PDF	NE32584C NE32584C-T1A NE32584C-T1 nec 3435 transistor am 4428

TRANSISTOR T 927 Search Results

TRANSISTOR T 927 Result Highlights (5)

TRANSISTOR T 927 Datasheets Context Search

telefunken IC

NPN transistor mhz s-parameter

telefunken transistor

telefunken IC 121

kf 8715

Untitled

MA 2831

BFR 182 transistor

Transistor BFR 67

LG color tv Circuit Diagram schematics

IC HXJ 2038

1N6227

2N2222A 338

y51 h 120c

transistor ITT 2907

Untitled

ic TT 2222

philips carbon film resistor

Untitled

pmi dac08

RU901

Untitled

transistor 2S D 716

NE32584C-T1