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    TRANSISTOR T 04 27 Search Results

    TRANSISTOR T 04 27 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR T 04 27 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3PN0604

    Abstract: TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2
    Text: IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 4.1 mΩ ID 100 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB100N06S3-04 IPI100N06S3-04, IPP100N06S3-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 SP0001-02220 3PN0604 3PN0604 TRANSISTOR SMD MARKING CODE 04 IPB100N06S3-04 IPI100N06S3-04 IPP100N06S3-04 PG-TO263-3-2

    3PN06L04

    Abstract: SMD code d59 TRANSISTOR SMD MARKING CODE 04 IPI100N06S3L-04 d59 smd IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2
    Text: IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 3.5 mΩ ID 100 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB100N06S3L-04 IPI100N06S3L-04, IPP100N06S3L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 SP0001-02219 3PN06L04 3PN06L04 SMD code d59 TRANSISTOR SMD MARKING CODE 04 IPI100N06S3L-04 d59 smd IPB100N06S3L-04 IPP100N06S3L-04 PG-TO263-3-2

    6r385P

    Abstract: IPL60R385CP JESD22 EL series small size SMD transistor infineon msl
    Text: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R385CP Data Sheet Rev. 1.0, 2010-04-30 Preliminary In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description


    Original     		PDF IPL60R385CP 150mm² 6r385P IPL60R385CP JESD22 EL series small size SMD transistor infineon msl

    BFP540

    Abstract: Transistor BFP540 BGB540 GPS05605 T0559
    Text: P r e l i m in a r y d a t a s h e e t , B G B 5 4 0 , D e c . 2 0 0 0 y BGB 540 li m in ar Active Biased Transistor P re MMIC W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2000-12-04 Published by Infineon Technologies AG,


    Original     		PDF D-81541 BGB540 BGB540 BFP540. GPS05605 BFP540 Transistor BFP540 GPS05605 T0559

    PEMB10

    Abstract: PEMB1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PEMD10; PUMD10 NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ Product specification Supersedes data of 2003 Jun 27 2003 Nov 04 Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors;


    Original     		PDF PEMD10; PUMD10 PEMD10 SCA75 R75/04/pp9 PEMB10 PEMB1

    PMSS3904

    Abstract: PMSS3906
    Text: DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D187 PMSS3904 NPN switching transistor Product data sheet Supersedes data of 1997 Sep 03 1999 May 27 NXP Semiconductors Product data sheet NPN switching transistor PMSS3904 FEATURES PINNING • Low current max. 100 mA


    Original     		PDF M3D187 PMSS3904 SC-70 OT323) PMSS3906. 115002/04/pp7 PMSS3904 PMSS3906

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D187 PMSS3904 NPN switching transistor Product data sheet Supersedes data of 1997 Sep 03 1999 May 27 NXP Semiconductors Product data sheet NPN switching transistor PMSS3904 PINNING FEATURES • Low current max. 100 mA


    Original     		PDF M3D187 PMSS3904 SC-70 OT323) PMSS3906. 115002/04/pp7

    BP317

    Abstract: PMSS3904 PMSS3906
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMSS3904 NPN switching transistor Product specification Supersedes data of 1997 Sep 03 1999 May 27 Philips Semiconductors Product specification NPN switching transistor PMSS3904 FEATURES PINNING • Low current max. 100 mA


    Original     		PDF M3D187 PMSS3904 SC-70 OT323) PMSS3906. 115002/04/pp8 BP317 PMSS3904 PMSS3906

    SLo 380 R

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BC618 NPN Darlington transistor 1999 Apr 23 Product specification Supersedes data of 1997 Jul 04 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN Darlington transistor BC618 FEATURES


    OCR Scan     		PDF BC618 115002/00/03/pp8 SLo 380 R

    bvc62

    Abstract: STR 734
    Text: DISCRETE SEMICONDUCTORS IM TÂ mH T BLV859 UHF linear push-pull power transistor Product specification Supersedes data of 1995 Oct 04 File under Discrete Semiconductors, SC08a Philips Sem iconductors 1996 Jul 26 PHILIPS Philips Semiconductors Product specification


    OCR Scan     		PDF BLV859 SC08a OT262B SCA51 127041/1200/02/pp16 bvc62 STR 734

    ulm 2003

    Abstract: ulm 2004 ULN2003 current buffer ULN2003 PIN configuration uln2003 buffer ULN2003N ULN2003 equivalent ULN2003 ULN2003 ac ULN2004N
    Text: ULN2003/04 Signetics High V o lta g e /H ig h Current Darlington Transistor Arrays Product Specification L in e a r P r o d u c t s D E S C R IP T IO N These high voltage, high current Darling­ ton transistor arrays are comprised of seven silicon NPN Darlington pairs on a


    OCR Scan     		PDF ULN2003/04 600mA ULN2003 ULN2004 ULN2004 ULN2003 ulm 2003 ulm 2004 ULN2003 current buffer ULN2003 PIN configuration uln2003 buffer ULN2003N ULN2003 equivalent ULN2003 ac ULN2004N

    EN4094

    Abstract: No abstract text available
    Text: SA NY O S E M I C O N D U C T O R CORP Ordering number: EN4094 b3E D • 7n7D7b D Q l E M ô b 04Ô * T S A J I Monolithic Digital 1C SÄWO LB1741 No. 4094 Octal NPN Darlington-pair Transistor Array PINOUT OVERVIEW The LB1741 is a high-current Darlington-pair transistor


    OCR Scan     		PDF EN4094 LB1741 LB1741 18-pin EN4094

    BD131

    Abstract: D1891 D1687 TRANSISTOR D 1979 NPN POWER TRANSISTOR SOT-32 BD132 IEC134 Xpert transistor Bd132
    Text: PHIL I P S I N T E R N A T I O N A L SbE D • 711 0 05 b QCm2 7 bO 04Ô « P H I N r - 3 3 - ò / SILICON PLANAR EPITAXIAL POWER TRANSISTOR N-P-N transistor in a SOT-32 plastic envelope for general purpose, medium power applications. P-N-P complement is BD132.


    OCR Scan     		PDF BD131 711005b Q0427faD OT-32 BD132. O-126 OT-32) D1891 D1687 TRANSISTOR D 1979 NPN POWER TRANSISTOR SOT-32 BD132 IEC134 Xpert transistor Bd132

    sot23 ria marking

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Sep 04 Philips Sem iconductors 1999 Apr 15 PHILIPS Philips Semiconductors Product specification NPN high-voltage transistor BSS64 FEATURES PINNING • Low curren t max. 100 mA PIN • High voltage (max. 80 V).


    OCR Scan     		PDF BSS64 BSS63. MAM255 115002/00/04/pp8 sot23 ria marking

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA GT60M104 TO SH IBA INSULATED GATE BIPO LAR TRANSISTOR SILICON N -CH ANNEL IGBT G T 6 0 M 1 04 HIGH POW ER SW ITCHING APPLICATIONS U nit in mm High Input Impedance High Speed : tf= 0 .4 /is Max. Low Saturation Voltage : V q e (sat) = 3 '7 v (Max.)


    OCR Scan     		PDF GT60M104

    10N25

    Abstract: No abstract text available
    Text: MOTOROLA SC 14E D X S T R S /R F b 3 b 7 a s 4 0 010 04 4 4 1 r - 3 Ÿ - / 3 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTM10N25 MTP10N25 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FETs 10 AMPERES


    OCR Scan     		PDF MTM10N25 MTP10N25 0J570 19XACE 30i0012 TQ-204AA 21A-04 O-220AB 10N25

    E3V3-R81

    Abstract: E3V3-R61 E3V3-T61 E3V3-D62 E3V3-D82 E3V3-T81 e3v3-r81-m3j E3V3-D61 E3V3-D81 E39-RSA
    Text: 05/04/100 TIME: 11:23 FROM: 020 8450 8087 Omron TO: 0113 2794449 PAGE: 002-013 7 ,2 1 - 3 Í D .2 I i & k f omRon Built-in Amplifier Photoelectric Sensor E 3V 3 Easy-to-use, Low-cost Photoelectric Sensor • Incorporating indicators that can be clearly seen


    OCR Scan     		PDF 91/368/EEC, E238-E1-1 0795-3M E3V3-R81 E3V3-R61 E3V3-T61 E3V3-D62 E3V3-D82 E3V3-T81 e3v3-r81-m3j E3V3-D61 E3V3-D81 E39-RSA

    TRANSISTOR 185 846

    Abstract: K 2225 transistor diode rj 93 kd62
    Text: POÜJEREX INC m NBŒ X 3*\Z D • 7S b S 1 GDDMS'IM Powerex, Inc., M ills Street, Youngwood, Pennsylvania 15697 412 92 5-7 272 Powerex Europe, S.A., 428 Avenue G, Durand, BP107, 72003 Le Mans, France (43)41.14.14 7 mPRX T '22-25' KD624530 Dual Darlington


    OCR Scan     		PDF BP107, KD624530 Amperes/600 BP107 KD624S30 TRANSISTOR 185 846 K 2225 transistor diode rj 93 kd62

    230Z

    Abstract: V3301 NEL230253 L230C NEL2300 NEL2301 NEL2302 NEL2303 2SG 111 TRANSISTOR 2SG 111
    Text: NE C/ CALIFORNIA NEC 1SE D h 427 414 00 01 275 Ö T- 33-0? NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS çta = 2 5 °g RATINGS • HIGH GAIN: G mb = 6.5 dB


    OCR Scan     		PDF h427414 T-33-T- NEL2300 Emitterj17 bHS7414 V3301 -r-33 NEL230353 230Z V3301 NEL230253 L230C NEL2301 NEL2302 NEL2303 2SG 111 TRANSISTOR 2SG 111

    SMD TRANSISTOR MARKING P28

    Abstract: SMD transistor MARKING CODE g23 TRANSISTOR SMD MARKING CODE kn SMD MARKING CODE P28 g23 SMD Transistor 5962-8950303GC smd transistor marking G23 5962-8950303PA gu32 SMD TRANSISTOR MARKING jf
    Text: REVISIONS LTR D DESCRIPTION DATE YR-MO-DA APPROVED Add device type 05. Add vendor CAGE 27014. Make changes to 1.3, 1.4, table I, figures 1 ,3 ,4 , 5, and 6. 93-05-10 M. A. FRYE Changes in accordance with N.O.R. 5962-R053-94. 94-06-24 M. A. FRYE Redrawn with changes. Technical and editorial changes


    OCR Scan     		PDF 5962-R053-94. SMD TRANSISTOR MARKING P28 SMD transistor MARKING CODE g23 TRANSISTOR SMD MARKING CODE kn SMD MARKING CODE P28 g23 SMD Transistor 5962-8950303GC smd transistor marking G23 5962-8950303PA gu32 SMD TRANSISTOR MARKING jf

    62003F

    Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852
    Text: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| TD62 xxx rray| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F


    OCR Scan     		PDF 40Series, 226Devices) 62003P/PA 2003A 2004A 62003F/FB/ 62004F/FB/ 16bit TB62705BF DIP24 62003F 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852

    transistor s250

    Abstract: photo diode motion sensor Photo Gap Detector
    Text: SILICON SENSOR S INC 75 DE 1 0253^52 8253922 SILICON ¿ENSQRS INC TTJ□ □ 11 si SILICON SENSORS, INC. Highway 18 East Dodgeville, Wisconsin 53533 Telephone: 608 935-2707 0000374 7ëc 00374 5 D optical switch SSOS-800 SSOS-700 SSQS-700 SS0S-800 TECHNICAL BULLETIN


    OCR Scan     		PDF SSOS-700 SSOS-800 SSQS-700 SS0S-800 SSQS-700 transistor s250 photo diode motion sensor Photo Gap Detector

    BU1708AX

    Abstract: 7DFL
    Text: Product specification Philips Semiconductors Silicon diffused power transistor BU1708AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope specially designed for 277 V high frequency electronic lighting ballast applications.


    OCR Scan     		PDF BU1708AX QD77S3S f-rs54] OT186A; OT186 007753b BU1708AX 7DFL

    lem HA

    Abstract: BU1708AX
    Text: Product specification Philips Semiconductors Silicon diffused power transistor BU1708AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope specially designed for 277 V high frequency electronic lighting ballast applications.


    OCR Scan     		PDF BU1708AX OT186A; OT186 007753b lem HA BU1708AX