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    TRANSISTOR SSG 111 Search Results

    TRANSISTOR SSG 111 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SSG 111 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ECG009

    Abstract: C100 MCH185A560JK E4432B 60-000346-000B SS 1091
    Text: PRELIMINARY DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications „ „ DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz


    Original     		PDF ECG009 900MHz OT-89 ECG009 OT-89 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 C100 MCH185A560JK E4432B 60-000346-000B SS 1091

    9-GHz

    Abstract: TOP MARKING C1 ROHM C100 ECG009 JESD22-A113-B MCH185A560JK marking c7 sot-89 JESD22-A108-A ROHM SOT89 MARKING resistor de 27k ohm
    Text: PRODUCTION DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features Applications „ „ DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz


    Original     		PDF ECG009 900MHz OT-89 ECG009 OT-89 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 AP-000516-000 9-GHz TOP MARKING C1 ROHM C100 JESD22-A113-B MCH185A560JK marking c7 sot-89 JESD22-A108-A ROHM SOT89 MARKING resistor de 27k ohm

    ROHM SOT89 MARKING

    Abstract: ECG009B-1000 ECG009 311 SOT89
    Text: PRODUCTION DATA SHEET ECG009 BROADBAND HIGH OIP3 AMPLIFIER DC - 2500 MHz Features „ Applications DC to 2500 MHz 41 dBm Typical OIP3 at 1900 MHz Highly Reliable InGaP HBT 19.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz 24.0 dBm Typical P1dB at 2170 MHz


    Original     		PDF ECG009 900MHz OT-89 ECG009 OT-89 AP-000192-000 AP-000194-000 AP-000487-000 AP-000515-000 ROHM SOT89 MARKING ECG009B-1000 311 SOT89

    2S110

    Abstract: transistor bc 647 SSG 23 TRANSISTOR FPD750SOT89 FPD750SOT89E
    Text: FPD750SOT89 Datasheet v2.4 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.85GHZ : • • • • • • RoHS 25 dBm Output Power (P1dB) 9 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant


    Original     		PDF FPD750SOT89 85GHZ) FPD750SOT89E: 2002/95/EC) FPD750SOT89 EB750SOT89 2S110 transistor bc 647 SSG 23 TRANSISTOR FPD750SOT89E

    Transistor BC 1078

    Abstract: 2S110 FPD750SOT89 FPD750SOT89E transistor bc 647
    Text: FPD750SOT89 Datasheet 3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.85GHZ : • • • • • • RoHS 25 dBm Output Power (P1dB) 9 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant


    Original     		PDF FPD750SOT89 85GHZ) FPD750SOT89E: 2002/95/EC) FPD750SOT89 EB750SOT89 Transistor BC 1078 2S110 FPD750SOT89E transistor bc 647

    FPD750SOT89

    Abstract: BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E
    Text: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		PDF FPD750SOT89 25dBm 39dBm FPD750SOT89 25mx1500m FPD750SOT89E: FPD750SOT89CE-BC FPD750SOT89CE-BE FPD750SOT89CE-BG BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E

    Transistor BC 1078

    Abstract: FPD750SOT89 FPD750SOT89CE FPD750SOT89E S 8550 transistor BC 1078 transistor
    Text: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm


    Original     		PDF FPD750SOT89E FPD750SOT89 FPD750SOT89CE 25mx1500m FPD750SOT89CE: FPD750SOT89PCK FPD750SOT89ESQ FPD750SOT89ESR Transistor BC 1078 FPD750SOT89 FPD750SOT89E S 8550 transistor BC 1078 transistor

    FPD1500DFN

    Abstract: FPD750DFN FPD750SOT89
    Text: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a


    Original     		PDF FPD750DFN FPD750DFN mx750 24dBm 85GHz 39dBm 85GHz) EB750DFN-BA FPD1500DFN FPD750SOT89

    fpd750sot89e

    Abstract: Transistor BC 1078 transistor 037J FPD750SOT89ESR TRANSISTOR 8550, SOT89 1608 Size Chip Resistor 122
    Text: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m


    Original     		PDF FPD750SOT89 FPD750SOT89E FPD750SOT89CE mx1500 25dBm 39dBm FPD750SOT89CE: FPD750SOT89E FPD750SOT89PCK Transistor BC 1078 transistor 037J FPD750SOT89ESR TRANSISTOR 8550, SOT89 1608 Size Chip Resistor 122

    transistor bc 647

    Abstract: No abstract text available
    Text: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky


    Original     		PDF FPD750SOT89 25dBm 39dBm FPD750SOT89 mx1500Î FPD750SOT89E: FPD750SOT89E FPD750SOT89CE EB750SOT89CE-BC transistor bc 647

    Transistor BC 1078

    Abstract: FPD750SOT89CE FPD750SOT89 TRANSISTOR 8550, SOT89
    Text: FPD750SOT89CE FPD750SOT89 CE Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm


    Original     		PDF FPD750SOT89CE FPD750SOT89 25dBm 39dBm FPD750SOT89CE 25mx1500m FPD750SOT89CE: EB750SOT89CE-BC FPD750SOT89CESR Transistor BC 1078 FPD750SOT89 TRANSISTOR 8550, SOT89

    Untitled

    Abstract: No abstract text available
    Text: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m


    Original     		PDF FPD750SOT89E FPD750SOT89 FPD750SOT89CE mx1500ï 25dBm FPD750SOT89PCK FPD750SOT89ESQ FPD750SOT89ESR

    si 4422

    Abstract: FPD1500DFN FPD750DFN FPD750SOT89 Z624 Z5 1512
    Text: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT NOT FOR NEW DESIGNS Package: 2mmx2mm DFN Product Description Features Optimum Technology Matching Applied „ „ „ „ GaAs HBT 24dBm Output Power P1dB at 1.85GHz


    Original     		PDF FPD750DFN 24dBm 85GHz 39dBm FPD750DFN mx750 EB750DFN-BC si 4422 FPD1500DFN FPD750SOT89 Z624 Z5 1512

    Untitled

    Abstract: No abstract text available
    Text: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT NOT FOR NEW DESIGNS Package: 2mmx2mm DFN Product Description Features The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a


    Original     		PDF FPD750DFN FPD750DFN mx750Â EB750DFN-BC FPD750DFNSR FPD750DFNSQ DS100126

    pseudomorphic HEMT

    Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
    Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm


    Original     		PDF FPD6836SOT343 FPD6836SOT3 OT343 FPD6836SOT343 mx750 1850MHz) 18dBm 2002/95/EC) FPD6836SOT343E FPD6836SOT343E-AG pseudomorphic HEMT TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564

    transistor bc 564

    Abstract: bc 5578 0604HQ FPD6836SOT343 OT343 re 0603size bc 548 transistor S22m transistor BC 548 Data transistor Bc 540
    Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive


    Original     		PDF FPD6836SOT343 FPD6836SOT3 OT343 1850MHz) 2002/95/EC) 18dBm FPD6836SOT343 mx750 FPD6836SOT343E EB6836SOT343CE-BA transistor bc 564 bc 5578 0604HQ OT343 re 0603size bc 548 transistor S22m transistor BC 548 Data transistor Bc 540

    FPD1500SOT89

    Abstract: TRANSISTOR BC 252 IGD 507 an CAPACITOR 33PF FPD1500SOT89E filtronic Solid State 33id
    Text: FPD1500SOT89 Datasheet v2.4 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 27.5 dBm Output Power (P1dB) 17 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 50% Power-Added Efficiency FPD1500SOT89E - RoHS compliant


    Original     		PDF FPD1500SOT89 1850MHZ) FPD1500SOT89E FPD1500SOT89 22-A114. EB1500SOT89 J-STD-020C, TRANSISTOR BC 252 IGD 507 an CAPACITOR 33PF filtronic Solid State 33id

    FPD1500SOT89

    Abstract: FPD1500SOT89E 09DB FPD1500SOT89CE
    Text: FPD1500SOT89 Datasheet v3.0 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 27.5 dBm Output Power (P1dB) 17 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 50% Power-Added Efficiency FPD1500SOT89E - RoHS compliant


    Original     		PDF FPD1500SOT89 1850MHZ) FPD1500SOT89E FPD1500SOT89 22-A114. EB1500SOT89 J-STD-020C, 09DB FPD1500SOT89CE

    Transistor BC 1078

    Abstract: stepper transistor w10 IC 74 L5 438 PHEM transistor as low noise amplifier SSG 23 TRANSISTOR FPD750SOT89 FPD750SOT89E TL11 TL13
    Text: FPD750SOT89 Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.85GHZ : • • • • • • 25 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant


    Original     		PDF FPD750SOT89 85GHZ) FPD750SOT89E: 2002/95/EC) FPD750SOT89 FPD750SOT89E EB750SOT89 Transistor BC 1078 stepper transistor w10 IC 74 L5 438 PHEM transistor as low noise amplifier SSG 23 TRANSISTOR FPD750SOT89E TL11 TL13

    FPD750SOT89

    Abstract: transistor Bc 574 FPD750SOT89E TL11 TL13 TRANSISTOR bc 657
    Text: FPD750SOT89 Datasheet v2.3 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.85GHZ : • • • • • • 25 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant


    Original     		PDF FPD750SOT89 85GHZ) FPD750SOT89E: 2002/95/EC) FPD750SOT89 FPD750SOT89E EB750SOT89 transistor Bc 574 FPD750SOT89E TL11 TL13 TRANSISTOR bc 657

    TRANSISTOR 618

    Abstract: BFQ33C UCD117 BFQ33 sot173and
    Text: fcj fci SBTBl Philips S em iconductors 0 0 3 1 SSG AM? M APX Product specification BFQ33C NPN 12 GHz wideband transistor T> N AMER P H I L I P S / D I S C R E T E DESCRIPTION PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173and SOT173X micro-stripline envelopes, primarily


    OCR Scan     		PDF DG31SSG BFQ33C OT173and OT173X OT173. OT173X. TRANSISTOR 618 BFQ33C UCD117 BFQ33 sot173and

    OTOMAX

    Abstract: transistor 1020
    Text: MPS-093011-82 i'yjwí' 111!• 1111 i l l i« » «nijiilfiir www.m wtinc.com Email: info@mwtinc.com B M flN M M • +45 dBm Typical IP3 Single Positive Bias • +30 dBm Typical PldB Surface Mount Package • 16 dB Typical Gain The MPS093Q11 is a modular amplifier designed to meet the uitrallnear


    OCR Scan     		PDF MPS-093011-82 MPS093Q11 45dBm) D50TYP. OTOMAX transistor 1020

    IT1701

    Abstract: No abstract text available
    Text: MPS-173011-82 1H> I t 1701 i l l 111891 AHiPiiiQf Email: info@mwtinc.com www.mwtinc.com i * .j •■ f m *m • +45 dBm Typical IP3 Single Positive Bias • 1 W Typical Output Power Surface Mount Package • 14 dB Typical Gain The M PS-173011-82 is a modular amplifier designed to meet the ultralinear transm it­


    OCR Scan     		PDF MPS-173011-82 PS-173011-82 IT1701

    Untitled

    Abstract: No abstract text available
    Text: MPS-173011-85/86 jVtWJ 1 IÜ I« 1701i l l llatai ttnplilii www.mwtinc.com Email: info@mwtinc.com KttntnniPAfi • +45 dBm Typical IP3 Single Positive Bias • 1W Typical Output Power Surface Mount Packs Half Flange Package • 14 dB Typical Gain The MPS173011 is a modular amplifier designed to meet the uitralinear transm itter


    OCR Scan     		PDF MPS-173011-85/86 1701i MPS173011 45dBm)