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    TRANSISTOR SSB 148 Search Results

    TRANSISTOR SSB 148 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR SSB 148 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BLF147

    Abstract: transistor C8 4312 020 36642
    Text: BLF147 VHF power MOS transistor Rev. 05 — 8 November 2006 Product data sheet 1. Product profile 1.1 General description 150 W enhancement mode vertical D-MOS power transistor for HF/VHF applications. Table 1. Typical performance Typical RF performance at Th = 25 °C in a common-source test circuit.[1]


    Original     		PDF BLF147 BLF147 transistor C8 4312 020 36642

    multiplier mmic

    Abstract: No abstract text available
    Text: CHU2277a RoHS COMPLIANT W-band Multifunction Multiplier / MPA GaAs Monolithic Microwave IC Description Main Features +V -V OUT1 IN x2 OUT2 W-band multifunction block-diagram 20 18 OUT1 16 Output power dBm The CHU2277a is a W-band monolithic multifunction which integrates a frequency


    Original     		PDF CHU2277a CHU2277a 77GHz, DSCHU2277a6013 multiplier mmic

    w-band

    Abstract: CHU2277 mmic mar 3
    Text: CHU2277 RoHS COMPLIANT W-band Multifunction Multiplier / MPA GaAs Monolithic Microwave IC Description Main Features +V -V OUT1 IN x2 OUT2 W-band multifunction block-diagram 20 18 OUT1 16 Output power dBm The CHU2277 is a W-band monolithic multifunction which integrates a frequency


    Original     		PDF CHU2277 CHU2277 77GHz, DSCHU22771074 -15-Mar w-band mmic mar 3

    CHU2277

    Abstract: No abstract text available
    Text: CHU2277 RoHS COMPLIANT W-band Multifunction : Multiplier / MPA GaAs Monolithic Microwave IC Description Main Features n n n n n n n n n n Wide operating frequency range Low input power : 5dBm typical High output power OUT1 Auxiliary output power (OUT2) Low AM noise


    Original     		PDF CHU2277 CHU2277 DSCHU22771074 -15-Mar

    CHU2277

    Abstract: No abstract text available
    Text: CHU2277 W-band Multifunction : Multiplier / MPA GaAs Monolithic Microwave IC Description Main Features n n n n n n n n n n +V -V OUT1 IN x2 OUT2 W-band multifunction block-diagram 20 18 OUT1 16 Output power dBm The CHU2277 is a W-band monolithic multifunction which integrates a frequency


    Original     		PDF CHU2277 CHU2277 77GHz, DSCHU22771074 -15-Mar

    Untitled

    Abstract: No abstract text available
    Text: CHU2277 RoHS COMPLIANT W-band Multifunction Multiplier / MPA GaAs Monolithic Microwave IC Description Main Features 1 1 1 1 1 1 1 1 1 1 +V -V OUT1 IN x2 OUT2 W-band multifunction block-diagram 20 18 OUT1 16 Output power dBm The CHU2277 is a W-band monolithic


    Original     		PDF CHU2277 CHU2277 77GHz, DSCHU22771074 -15-Mar

    Untitled

    Abstract: No abstract text available
    Text: HMC532LP4 / 532LP4E v01.0508 MMIC VCO w/ BUFFER AMPLIFIER, 7.1 - 7.9 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Ampliier for: Pout: +14 dBm • VSAT Radio Phase Noise: -103 dBc/Hz @100 KHz • Point to Point/Multipoint Radio No External Resonator Needed


    Original     		PDF HMC532LP4 532LP4E HMC532LP4 HMC532LP4E

    H532

    Abstract: 7.1 amplifier circuit diagram HMC532LP4 HMC532LP4E H-532
    Text: HMC532LP4 / 532LP4E v01.0508 MMIC VCO w/ BUFFER AMPLIFIER, 7.1 - 7.9 GHz Typical Applications Features Low noise MMIC VCO w/Buffer Amplifier for: Pout: +14 dBm • VSAT Radio Phase Noise: -103 dBc/Hz @100 KHz • Point to Point/Multipoint Radio No External Resonator Needed


    Original     		PDF HMC532LP4 532LP4E HMC532LP4 HMC532LP4E H532 7.1 amplifier circuit diagram H-532

    T 514

    Abstract: HMC533LP4 HMC533LP4E
    Text: HMC533LP4 / 533LP4E v00.0405 MMIC VCO w/ DIVIDE-BY-16, 23.8 - 24.8 GHz Typical Applications Features Low noise MMIC VCO w/Divide-by-16 for: Pout: +12 dBm • VSAT Radio Phase Noise: -95 dBc/Hz @100 KHz Typ. • Point to Point/Multipoint Radio No External Resonator Needed


    Original     		PDF HMC533LP4 533LP4E DIVIDE-BY-16, w/Divide-by-16 HMC533LP4 HMC533LP4E divide-by-16 perfo50-3343 T 514

    Untitled

    Abstract: No abstract text available
    Text: CHU2277a RoHS COMPLIANT W-band Multifunction : Multiplier / MPA GaAs Monolithic Microwave IC Description Main Features n n n n n n n n n n n Wide operating frequency range Low input power : 5dBm typical High output power OUT1 Auxiliary output power (OUT2)


    Original     		PDF CHU2277a CHU2277a DSCHU2277a6013

    Untitled

    Abstract: No abstract text available
    Text: CHU2277a RoHS COMPLIANT W-band Multifunction : Multiplier / MPA GaAs Monolithic Microwave IC Description Main Features +V -V OUT1 IN x2 OUT2 W-band multifunction block-diagram 20 18 OUT1 16 Output power dBm The CHU2277a is a W-band monolithic multifunction which integrates a frequency


    Original     		PDF CHU2277a CHU2277a 77GHz, DSCHU2277a6013

    NEC J330

    Abstract: Transistor AC 51 0865 75 834 J243 nec j139 transistor 843 j122 nec j142 J119 j142 transistor j222 j330
    Text: Application Note USAGE AND APPLICATION CHARACTERISTICS OF µPC2757, µPC2758, AND µPC8112, 3-V POWER SUPPLY, 1.9-GHz FREQUENCY DOWN-CONVERTER ICS FOR MOBILE COMMUNICATION Document No. P11997EJ2V0AN00 2nd edition Date Published August 1999 N CP(K) Printed in Japan


    Original     		PDF PC2757, PC2758, PC8112, P11997EJ2V0AN00 plea88-6130 NEC J330 Transistor AC 51 0865 75 834 J243 nec j139 transistor 843 j122 nec j142 J119 j142 transistor j222 j330

    Untitled

    Abstract: No abstract text available
    Text: HMC513LP5 / 513LP5E v00.0405 MMIC VCO w/ HALF FREQUENCY OUTPUT & DIVIDE-BY-4, 10.43 - 11.46 GHz Typical Applications Features Low noise MMIC VCO w/Half Frequency, Divide-by-4 Outputs for: Dual Output: Fo = 10.43 - 11.46 GHz Fo/2 = 5.21 - 5.73 GHz • VSAT Radio


    Original     		PDF HMC513LP5 513LP5E HMC513LP5 HMC513LP5E

    transistor tc 144

    Abstract: M57713
    Text: MITSUBISHI RF POWER MODULE M57713 144~148MHz, 12.5V, 17W, MOBILE SSB RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm <f> HK © l> PIN : © P in RF INPUT ®VCC1 1st. DC SUPPLY ®VBB BASE BIAS ®VCC2 2nd. DC SUPPLY ®P0 RF O UTPUT ®GND FIN H3 ABSOLUTE MAXIMUM RATINGS Tc = 25°C unless otherwise noted


    OCR Scan     		PDF M57713 148MHz, transistor tc 144 M57713

    transistor tc 144

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57727 144~ 148MHz, 12.5V, 37W, SSB MOBILE RADIO PIN : P in OVCCI CDVBB VCC2 ®PO ©GND : RF INPUT : 1st. DC SUPPLY : BASE BIAS r 2nd. DC SUPPLY : RF OUTPUT : FIN ABSOLUTE MAXIMUM RATINGS Tc = 25!'C unless otherwise noted


    OCR Scan     		PDF M57727 148MHz, transistor tc 144

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M57727 144-148MHz, 12.5V, 37W, SSB MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM D im ensions in mm D> PIN : P in RF IN PU T ©VCCI 1st. DC SUPPLY VBB BASE BIAS SUPPLY ® VC C 2 2nd. DC SUPPLY ©Po RF O U TPU T © 6N D FIN H3 ABSOLUTE MAXIMUM RATINGS Tc = 25'1C unless otherwise noted


    OCR Scan     		PDF M57727 144-148MHz,

    2L3 transistor

    Abstract: M57727 5c142
    Text: MITSUBISHI RF POWER MODULE M57727 144-148MHz, 12.5V, 37W, SSB MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM PIN : Pin @ vcct ®VBB ®VCC2 G N D RF INPUT 1st. DC SUPPLY BASE BIAS SUPPLY 2nd. DC SUPPLY RF OUTPUT FIN H3 ABSOLUTE MAXIMUM RATINGS Tc = 25T unless otherwise noted)


    OCR Scan     		PDF M57727 144-148MHz, 2L3 transistor M57727 5c142

    m57727

    Abstract: transistor tc 144 144-148MHZ power module hd- 110 Transistor SSB 148
    Text: MITSUBISHI RF POWER MODULE M57727 144-148MHz, 12.5V, 37W, SSB MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM D im ensions in mm [> PIN : P in : RF IN PU T ©VCC1 : 1st. DC SUPPLY VBB : BASE BIAS SUPPLY © VC C 2 : 2nd. DC SUPPLY ©PO : RF O U TPU T © G N D : FIN


    OCR Scan     		PDF M57727 144-148MHz, m57727 transistor tc 144 144-148MHZ power module hd- 110 Transistor SSB 148

    m57713

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M 57713 144-148MHz, 12.5V, 17W, SSB MOBILE RADIO BLOCK DIAGRAM PIN : B Pin (DVcci VBS @ VCC2 PO ®GND RF INPUT 1st. DC SUPPLY BASE BIAS SUPPLY 2nd. DC SUPPLY RF OUTPUT FiN ABSOLUTE MAXIMUM RATINGS (Tc = 2 5 tìC unless otherwise noted


    OCR Scan     		PDF 144-148MHz, m57713

    transistor tc 144

    Abstract: M57713 Transistor SSB 148 transistor c 144 Mitsubishi transistor rf final PQ-32/9060
    Text: MITSUBISHI RF POWER MODULE M57713 144-148MHz, 12.5V, 17W, SSB MOBILE RADIO OUTLINE DRAWING BLOCK DIAGRAM Dimensions in mm © —IH- © > [> Il— © PIN : © P in : RF INPUT V C C 1 : 1st. DC SUPPLY ®VBB : BASE BIAS SUPPLY @ VCC 2 : 2nd. DC SUPPLY ®PO


    OCR Scan     		PDF M57713 144-148MHz, transistor tc 144 M57713 Transistor SSB 148 transistor c 144 Mitsubishi transistor rf final PQ-32/9060

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI R F PO W ER M ODULE bSM^fiZT 0 0 1 7 1 LjS bMG • M57727 14 4-1 4 8 M H Z, O U TLIN E DRAW ING Dimensions in mm 12.5V, 37W, SSB MOBILE RADIO B L O C K D IAGRAM PIN : Pin : RF INPUT ©VCC1 : 1st. DC SU PPLY ®VBB : BASE BIAS S U PPLY ® VCC 2 : 2nd. DC S U PPLY


    OCR Scan     		PDF M57727

    marking code 7Gs

    Abstract: 3 DG 1008 BLF147 71005 philips resistor 2322-153 SOT121 Package
    Text: Product «pacification Philips Semiconductor» T -J ^ ~ /5 B L F 1 4 7 VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES • • • • • 5bE D • 711Dfl2b 0DM3703 27T BIPHIN PIN CONFIGURATION High power gain Low intermodulation distortion Easy power control


    OCR Scan     		PDF -/5BLF147 0DM3703 OT121 BLF147 711005b 0DM3711 marking code 7Gs 3 DG 1008 BLF147 71005 philips resistor 2322-153 SOT121 Package

    MCA114

    Abstract: BLF147 MCA122 71005 k 3531 transistor transistor K 3531
    Text: Philips Semiconductors bbS 3 T 31 D0 ETÔ55 M T1 • A P y Product specification BLF147 VHF power MOS transistor ~ A t 1 E R PhiA-IPS/]>ISCRETE blE » PIN CONFIGURATION FEATURES • High power gain • Low intermodulation distortion • Easy power control


    OCR Scan     		PDF bbS3T31 BLF147 OT121 BLF147 MCA114 MCA122 71005 k 3531 transistor transistor K 3531

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors • I bbS3T31 DDS^flSS MTl M A P * Product specification BLF147 VHF power MOS transistor - AnER PHIi-lPS/]>ISCRETE FEATURES bTE J> PIN CONFIGURATION • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability


    OCR Scan     		PDF bbS3T31 BLF147 OT121 MCA124 bbS3T31