Untitled
Abstract: No abstract text available
Text: FMMTA06 SOT23 NPN SILICON PLANARMEDIUM POWER TRANSISTORS SUMMARY V BR CEO > 80V IC(cont) = 500mA DESCRIPTION 80V medium pow er NPN transistor in a compact SOT23 package FEATURES SOT23 • 80V V CEO • Compact SOT23 package SYMBOL • HFE 50 @ IC = 100mA
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FMMTA06
500mA
100mA
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marking 1G SOT23
Abstract: base resistance for SOT23 FMMTA06TA 25 V 500mA TRANSISTOR SOT23 4446 NA MARKING SOT23 FMMTA06 transistor marking 44 sot23 FMMT-A06
Text: FMMTA06 SOT23 NPN SILICON PLANARMEDIUM POWER TRANSISTORS SUMMARY V BR CEO > 80V IC(cont) = 500mA DESCRIPTION 80V medium power NPN transistor in a compact SOT23 package FEATURES SOT23 • 80V V CEO • Compact SOT23 package SYMBOL • HFE 50 @ IC = 100mA APPLICATIONS
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FMMTA06
500mA
100mA
marking 1G SOT23
base resistance for SOT23
FMMTA06TA
25 V 500mA TRANSISTOR SOT23
4446
NA MARKING SOT23
FMMTA06
transistor marking 44 sot23
FMMT-A06
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT491Q 60V NPN MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the • stringent requirements of Automotive Applications. • Case: SOT23
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FMMT491Q
J-STD-020
MIL-STD-202,
DS37009
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT591Q 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Description Mechanical Data This Bipolar Junction Transistor BJT has been designed to meet the stringent requirements of Automotive Applications. • Features Case: SOT23
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FMMT591Q
J-STD-020
DS37010
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PDF
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K1 transistor
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT413 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 50A Peak Avalanche Current Pulse width = 20ns BVCES > 150V • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound.
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FMMT413
J-STD-020
MILSTD-202,
DS33083
K1 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated FMMT415 FMMT417 NPN AVALANCHE TRANSISTOR IN SOT23 Features Mechanical Data • Avalanche Transistor • • • 60A Peak Avalanche Current Pulse width = 20ns BVCES > 260V (415) & 320V (417) • Case: SOT23 Case Material: Molded Plastic. “Green” Molding Compound
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FMMT415
FMMT417
AEC-Q101
J-STD-020
FMMT415-FMMT417
DS33084
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PDF
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PNP POWER TRANSISTOR SOT23
Abstract: FT-110 sot23 6 device Marking SOT23-6 ZXTP2006E6 ZXTP2006E6TA ZXTP2006E6TC 52 sot23-6 PNP SOT23-6 .FT SOT23-6
Text: ZXTP2006E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BVCEO = -20V : RSAT = 31m ; IC = -3.5A DESCRIPTION Packaged in the SOT23-6 outline this new low saturation 20V PNP transistor offers extremely low on state losses making it ideal for use in DC-DC circuits
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ZXTP2006E6
OT23-6
OT23-6
-70mV
A/100mA
ZXTP2006E6TA
PNP POWER TRANSISTOR SOT23
FT-110
sot23 6 device Marking
SOT23-6
ZXTP2006E6
ZXTP2006E6TA
ZXTP2006E6TC
52 sot23-6
PNP SOT23-6
.FT SOT23-6
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ic 7495
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXTP25060BFH 60V PNP MEDIUM POWER TRANSISTOR IN SOT23 Features and Benefits Mechanical Data • BVCEO > -60V Breakdown Voltage • Case: SOT23 • 100V forward blocking voltage • Case material: molded Plastic. “Green” molding Compound.
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ZXTP25060BFH
-85mV
ZXTN25060BFH
AEC-Q101
DS33374
ic 7495
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PDF
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4 phase stepper motor
Abstract: 12v transformer fx3311 FMMT618 ir remote control transmitter BCP54, BCX54 FMMT619 zetex product BCX54 LL5818
Text: Application Note 11 Issue 2 October 1995 Features and Applications of the FMMT618 and 619 High Current SOT23 replaces SOT89, SOT223 and D-PAK David Bradbury Switch 6A loads using a SOT23 transistor? Zetex has developed this new range to meet ever increasing demands for
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FMMT618
OT223
FMMT619
OT223
10-20mV
4 phase stepper motor
12v transformer
fx3311
ir remote control transmitter
BCP54, BCX54
zetex product
BCX54
LL5818
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PDF
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marking P51 transistor
Abstract: ZX5T751F 1A SOT23
Text: ZX5T751F ADVANCED ISSUE SOT23 PNP SILICON 60V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > -80V V(BR)CEO > -60V Ic(cont) = -3.5A Rce(sat) = 40 m typical Vce(sat) < -80 mV @ -1A SOT23 DESCRIPTION FEATURES • • • •
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ZX5T751F
ZX5T751FTA
marking P51 transistor
ZX5T751F
1A SOT23
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PDF
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FMMT634
Abstract: IC 1A datasheet darlington sot23 npn transistor Ic 1A datasheet transistor Ic 1A datasheet NPN FMMT734 DSA003701
Text: “SuperSOT” SOT23 NPN SILICON POWER DARLINGTON TRANSISTOR FMMT634 ISSUE 1 – APRIL 97 FEATURES * 625mW POWER DISSIPATION * Highest current capability SOT23 Darlington * Very high hFE - specified at 2A 5K minimum - typically 600 at 5A COMPLEMENTARY TYPE – FMMT734
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FMMT634
625mW
FMMT734
100mA
100ms
100us
FMMT634
IC 1A datasheet
darlington sot23 npn
transistor Ic 1A datasheet
transistor Ic 1A datasheet NPN
FMMT734
DSA003701
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PDF
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FMMTA42
Abstract: FMMTA92 FMMTA92R pnp 200v fmmt-a
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - MARCH 2001 FMMTA92 ✪ PARTMARKING DETAILS: – FMMTA92 - 4E – FMMTA92R - 8E E C B COMPLEMENTARY TYPES: – FMMTA92 - FMMTA42 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage
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FMMTA92
FMMTA92
FMMTA92R
FMMTA42
-10mA,
-30mA
FMMTA42
pnp 200v
fmmt-a
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 - MARCH 2001 FMMTA92 ✪ PARTMARKING DETAILS: – FMMTA92 - 4E – FMMTA92R - 8E E C B COMPLEMENTARY TYPES: – FMMTA92 - FMMTA42 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage
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FMMTA92
FMMTA92
FMMTA92R
FMMTA42
-10mA,
-30mA
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PDF
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CM12A
Abstract: br 2222 npn ZX5T651F
Text: ZX5T651F ADVANCED ISSUE SOT23 NPN SILICON 60V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > 150V V(BR)CEO > 60V Ic(cont) = 4A Rce(sat) = 31 m typical Vce(sat) < 60 mV @ 1A SOT23 DESCRIPTION FEATURES • • • • APPLICATIONS
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ZX5T651F
ZX5T651FTA
CM12A
br 2222 npn
ZX5T651F
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STT817
Abstract: st17 SOT-23-6LTSOP-6
Text: STT817 PNP SILICON POWER TRANSISTOR PRELIMINARY DATA • SURFACE-MOUNTING SOT23-6L PACKAGE IN TAPE & REEL APPLICATIONS CHARGE POWER SWITCH FOR MOBILE PHONE ■ DESCRIPTION The device is manufactured using Epitaxial Planar Technology. SOT23-6L TSOP6 INTERNAL SCHEMATIC DIAGRAM
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STT817
OT23-6L
OT23-6L
STT817
st17
SOT-23-6LTSOP-6
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PDF
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MMBT5401
Abstract: No abstract text available
Text: MMBT5401 150V PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Epitaxial Planar Die Construction Complementary NPN Type - MMBT5551 Ideal for Low Power Amplification and Switching Case: SOT23 Case material: molded plastic, “Green” molding compound
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MMBT5401
MMBT5551
J-STD-020
AEC-Q101
MIL-STD-202,
DS30057
MMBT5401
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PDF
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transistor n53
Abstract: ZX5T653F h 033 Marking N53
Text: ZX5T653F ADVANCED ISSUE SOT23 NPN SILICON 100V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > 200V V(BR)CEO > 100V Ic(cont) = 3.5A Rce(sat) = 40 m typical Vce(sat) < 75 mV @ 1A SOT23 DESCRIPTION FEATURES • • • • APPLICATIONS
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ZX5T653F
ZX5T653FTA
transistor n53
ZX5T653F
h 033
Marking N53
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PDF
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marking P53 transistor
Abstract: ZX5T753F
Text: ZX5T753F ADVANCED ISSUE SOT23 PNP SILICON 100V GENERATION 5 LOW SATURATION MEDIUM POWER TRANSISTOR SUMMARY V(BR)CE V / S / R > -120V V(BR)CEO > -100V Ic(cont) = -3A Rce(sat) = 77 m typical Vce(sat) < -110 mV @ -1A SOT23 DESCRIPTION FEATURES • • • •
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ZX5T753F
-120V
-100V
marking P53 transistor
ZX5T753F
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PDF
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FMMTA14
Abstract: FMMTA64 FZTA64
Text: SOT23 PNP SILICON PLANAR DARLINGTON TRANSISTOR FMMTA64 ✪ ISSUE 3 – MARCH 2001 PARTMARKING DETAIL – FMMTA64 - Z2V E C COMPLEMENTARY TYPES – FMMTA64 - FMMTA14 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage
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FMMTA64
FMMTA64
FMMTA14
-100mA,
-50mA,
20MHz
-10mA,
FMMTA14
FZTA64
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR FMMT458 ISSUE 4 – APRIL 2002 FEATURES * 400 Volt VCEO E C COMPLEMENTARY TYPE – FMMT558 PARTMARKING DETAIL – 458 B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO
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FMMT458
FMMT558
100ms
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K1M 103
Abstract: AECQ-101 AECQ101 k1R diodes bc847c K1R SOT23 20/capacitor K1M 103
Text: BC846A-BC848C NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data • Ideally Suited for Automatic Insertion Case: SOT23 Complementary PNP Types Available BC856 – BC858 Case material: molded plastic, “Green” molding compound
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BC846A-BC848C
BC856
BC858)
AEC-Q101
J-STD-020
MIL-STD-202,
BC846A
BC848C
DS11108
K1M 103
AECQ-101
AECQ101
k1R diodes
bc847c
K1R SOT23
20/capacitor K1M 103
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 3 - NOVEMBER 1995 FMMT493 O_ COMPLEMENTARY TYPE- FMMT593 PARTMARKING DETAIL- 493 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage SYMBOL VALUE UNIT
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OCR Scan
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FMMT493
FMMT593
250mA,
500mA,
100MHz
width-300us.
100mA
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT23 NPN SILICON PLANAR HIGH VOLTAGE FMMT497 HIGH PERFORMANCE TRANSISTOR ISSUE 3 - DECEMBER 1995 O COMPLIMENTARY T Y P E - FMMT597 PARTMARKING D ETAIL- 497 I- SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage
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OCR Scan
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FMMT497
FMMT597
100MHz
100mA
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR o FEATURES * 350 Volt VCE0 * Gain of 15 at lc=-i00m A M, APPLICATIONS * SUITABLE FOR AMPLIFIER AND SWITCHING PRODUCTS COMPLEMENTARY TYPE FMMT6517 PARTMARKING DETAIL - 520 SOT23 ABSOLUTE MAXIMUM RATINGS. VALUE
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OCR Scan
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-i00m
FMMT6517
-30mA,
-50mA,
lc--10mA,
-20mA,
-100mA,
-10mA,
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